N25Q256A83ESFA0F vs N25Q512A83G12A0F 比較

詳細並排比較 N25Q256A83ESFA0F 由 Micron Technology 與 N25Q512A83G12A0F 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
N25Q256A83ESFA0F N25Q256A83ESFA0F - 256Mb SPI NOR Flash 108MHz | Micron

N25Q256A83ESFA0F - 256Mb SPI NOR Flash 108MHz | Micron

N25Q256A83ESFA0F ✓ 啟用中
Micron Technology
N25Q512A83G12A0F N25Q512A83G12A0F - 512Mbit SPI NOR Flash 108MHz | Micron

N25Q512A83G12A0F - 512Mbit SPI NOR Flash 108MHz | Micron

N25Q512A83G12A0F ✓ 啟用中

規格比較

參數 N25Q256A83ESFA0F N25Q512A83G12A0F
品牌 Micron Technology Micron Technology
類別 EEPROM Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash, Serial SPI Flash - NOR Memory IC
Density 256 Mbit (32 MB) —
組織 32M x 8 128M x 4
介面 SPI, Multiple I/O (Single/Dual/Quad) SPI - Multiple I/O (Standard/Dual/Quad)
Max Clock Frequency 108 MHz —
供應電壓 3 V (2.7 V to 3.6 V) 2.7 V to 3.6 V (3V class)
Technology 65nm NOR —
Sector Erase Size 4 KB 4 KB
工作溫度 -40C to +125C [DATA_NEEDED: operating temperature range]
功能特色 Execute-In-Place (XIP), Advanced Write Protection —
封裝 16-SOIC Wide (16SO) 24-T-PBGA (6x8 mm)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Grade Industrial —
Memory Capacity — 512 Mbit (64 MB)
Clock Frequency — 108 MHz
Cell Type — SLC
Package Structure — Dual-Die Package (DDP)
Program/Erase Protection — Software and hardware write protection
Endurance — [DATA_NEEDED: program/erase endurance cycles]
Active Read Current — [DATA_NEEDED: active read current]
Standby Current — [DATA_NEEDED: standby current]
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

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