N25Q512A83G12A0F vs N25Q512A13GSFA0F Perbandingan
Perbandingan bersamaan detil N25Q512A83G12A0F dari Micron Technology dan N25Q512A13GSFA0F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | N25Q512A83G12A0F | N25Q512A13GSFA0F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Flash - NOR Memory IC | SPI NOR Flash (Multiple I/O) |
| Memory Capacity | 512 Mbit (64 MB) | — |
| Organisasi | 128M x 4 | 512M/256M/128M x 1Bit/2Bit/4Bit |
| Antarmuka | SPI - Multiple I/O (Standard/Dual/Quad) | SPI-compatible serial bus |
| Clock Frequency | 108 MHz | — |
| Tegangan Pemuat | 2.7 V to 3.6 V (3V class) | 2.7 V to 3.6 V |
| Cell Type | SLC | — |
| Sector Erase Size | 4 KB | 4 KB |
| Paket | 24-T-PBGA (6x8 mm) | 16-Pin SOIC (SOP-II 16/16) |
| Package Structure | Dual-Die Package (DDP) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Program/Erase Protection | Software and hardware write protection | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 512 Mbit (64 MByte) |
| Max Clock Frequency (STR) | — | 108 MHz |
| Max Clock Frequency (DTR) | — | 54 MHz |
| Access Time | — | 7 ns |
| Construction | — | Stacked device (two 256Mb die) |
| Protocols | — | Standard, Dual Output, Dual I/O, Quad Output, Quad I/O, DTR |
| Packaging | — | Tape & Reel (T/R) |
| Temperature Grade | — | Automotive |