N25Q512A83G12A0F vs N25Q512A13GSFA0F Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci N25Q512A83G12A0F disebabkan oleh Micron Technology dan N25Q512A13GSFA0F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | N25Q512A83G12A0F | N25Q512A13GSFA0F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Flash - NOR Memory IC | SPI NOR Flash (Multiple I/O) |
| Memory Capacity | 512 Mbit (64 MB) | — |
| Organisasi | 128M x 4 | 512M/256M/128M x 1Bit/2Bit/4Bit |
| Antaramuka | SPI - Multiple I/O (Standard/Dual/Quad) | SPI-compatible serial bus |
| Clock Frequency | 108 MHz | — |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V (3V class) | 2.7 V to 3.6 V |
| Cell Type | SLC | — |
| Sector Erase Size | 4 KB | 4 KB |
| Kemasan | 24-T-PBGA (6x8 mm) | 16-Pin SOIC (SOP-II 16/16) |
| Package Structure | Dual-Die Package (DDP) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Program/Erase Protection | Software and hardware write protection | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 512 Mbit (64 MByte) |
| Max Clock Frequency (STR) | — | 108 MHz |
| Max Clock Frequency (DTR) | — | 54 MHz |
| Access Time | — | 7 ns |
| Construction | — | Stacked device (two 256Mb die) |
| Protocols | — | Standard, Dual Output, Dual I/O, Quad Output, Quad I/O, DTR |
| Packaging | — | Tape & Reel (T/R) |
| Temperature Grade | — | Automotive |