RMLV0816BGSD-4S2 vs RMLV0816BGSD-4S2#AC0 Perbandingan

Perbandingan bersamaan detil RMLV0816BGSD-4S2 dari Renesas Electronics dan RMLV0816BGSD-4S2#AC0 dari Renesas Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Renesas Electronics
RMLV0816BGSD-4S2 RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas

RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas

RMLV0816BGSD-4S2 ✓ Aktif
Renesas Electronics
RMLV0816BGSD-4S2#AC0 RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52

RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52

RMLV0816BGSD-4S2#AC0 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum RMLV0816BGSD-4S2 RMLV0816BGSD-4S2#AC0
Merek Renesas Electronics Renesas Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori Static RAM (SRAM), Asynchronous Volatile SRAM (LPSRAM)
Memory Subcategory Low-Power SRAM (LPSRAM) —
Memory Density 8 Mbit —
Organisasi 524,288-word x 16-bit (512K x 16) 524,288-word × 16-bit (configurable to 1M × 8)
Supply Voltage (VCC) 2.7 V to 3.6 V 2.4 V to 3.6 V
Access Time 45 ns 45 ns
Antarmuka Parallel (asynchronous) —
Rentang Suhu Kerja -40 C to +85 C (industrial) -40 °C to +85 °C
Paket 52-pin TSOP-II —
Tipe Mounting Surface Mount Surface Mount
Output Enable (/OE) Yes —
Write Enable (/WE) Yes —
Chip Select (/CS) Yes —
Byte Control /LB and /UB (lower/upper byte enable) UB# (upper byte), LB# (lower byte)
I/O Compatibility TTL-compatible —
Standby Current [DATA_NEEDED: standby current] —
Active Current [DATA_NEEDED: operating current] —
Process Technology Renesas Advanced LPSRAM CMOS Renesas Advanced LPSRAM CMOS
Status RoHS Compliant Compliant
Level MSL 3 (per JEDEC J-STD-020, typical for TSOP-II) MSL3 (per JEDEC J-STD-020, where stated in the datasheet)
Ukuran Memori — 8 Mbit
Bus Width — Parallel, 8-bit or 16-bit
Tipe Antarmuka — Parallel (asynchronous)
Package Type — 52-TSOP II
Konfigurasi Output — Three-state (with OE# control)
Write Control — WE# (active-low)
Chip Enable — CE# (active-low)
Data Retention Voltage (typical) — 2.0 V [DATA_NEEDED: confirm from datasheet retention section]

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