RMLV0816BGSD-4S2 vs RMLV0816BGSD-4S2#AC0 比較
詳細並排比較 RMLV0816BGSD-4S2 由 Renesas Electronics 與 RMLV0816BGSD-4S2#AC0 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Renesas Electronics
RMLV0816BGSD-4S2 - 8Mb Low-Power SRAM 512Kx16 45ns TSOP | Renesas
RMLV0816BGSD-4S2 ✓ 啟用中Renesas Electronics
RMLV0816BGSD-4S2#AC0 - 8Mb Advanced LPSRAM | Renesas | TSOP-II 52
RMLV0816BGSD-4S2#AC0 ✓ 啟用中規格比較
| 參數 | RMLV0816BGSD-4S2 | RMLV0816BGSD-4S2#AC0 |
|---|---|---|
| 品牌 | Renesas Electronics | Renesas Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Static RAM (SRAM), Asynchronous | Volatile SRAM (LPSRAM) |
| Memory Subcategory | Low-Power SRAM (LPSRAM) | — |
| Memory Density | 8 Mbit | — |
| 組織 | 524,288-word x 16-bit (512K x 16) | 524,288-word × 16-bit (configurable to 1M × 8) |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.4 V to 3.6 V |
| Access Time | 45 ns | 45 ns |
| 介面 | Parallel (asynchronous) | — |
| 工作溫度範圍 | -40 C to +85 C (industrial) | -40 °C to +85 °C |
| 封裝 | 52-pin TSOP-II | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Output Enable (/OE) | Yes | — |
| Write Enable (/WE) | Yes | — |
| Chip Select (/CS) | Yes | — |
| Byte Control | /LB and /UB (lower/upper byte enable) | UB# (upper byte), LB# (lower byte) |
| I/O Compatibility | TTL-compatible | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Active Current | [DATA_NEEDED: operating current] | — |
| Process Technology | Renesas Advanced LPSRAM CMOS | Renesas Advanced LPSRAM CMOS |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 3 (per JEDEC J-STD-020, typical for TSOP-II) | MSL3 (per JEDEC J-STD-020, where stated in the datasheet) |
| 記憶體容量 | — | 8 Mbit |
| Bus Width | — | Parallel, 8-bit or 16-bit |
| 介面類型 | — | Parallel (asynchronous) |
| Package Type | — | 52-TSOP II |
| 輸出配置 | — | Three-state (with OE# control) |
| Write Control | — | WE# (active-low) |
| Chip Enable | — | CE# (active-low) |
| Data Retention Voltage (typical) | — | 2.0 V [DATA_NEEDED: confirm from datasheet retention section] |