STB60NF06T4 vs IRF1010ESTRLPBF Perbandingan

Perbandingan bersamaan detil STB60NF06T4 dari STMicroelectronics dan IRF1010ESTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF1010ESTRLPBF IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF - 60V 84A N-Channel MOSFET | Infineon

IRF1010ESTRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum STB60NF06T4 IRF1010ESTRLPBF
Merek STMicroelectronics Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,80 —
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at 25°C 60 A —
Continuous Drain Current (ID) at 100°C 42 A —
Pulsed Drain Current (IDM) 240 A —
On-Resistance (RDS(on)) at VGS=10V 14 mΩ (typ), 18 mΩ (max) —
Gate-Source Voltage (VGS) ±20 V —
Gate Charge (Qg) 60 nC (typ) —
Input Capacitance (Ciss) 2200 pF (typ) —
Output Capacitance (Coss) 350 pF (typ) —
Reverse Transfer Capacitance (Crss) 120 pF (typ) —
Avalanche Energy (EAS) 300 mJ —
Rentang Suhu Kerja -55°C to +175°C —
Paket D2PAK (TO-263) D2PAK (TO-263)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Bebas Halogen Yes —
FET Type — N-Channel
Technology — HEXFET planar
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) @ Tc — 84 A
Power Dissipation (Pd) @ Tc — 200 W
On-Resistance (RDS on) @ VGS=10V — 12 mOhm
Total Gate Charge (Qg) — 86.6 nC
Operating Mode — Enhancement
Drive Voltage — 10 V (standard level)
Qualification — JEDEC standard qualified
Structure — Planar cell (wide SOA)
Avalanche Testing — 100% avalanche energy tested
Sourcing — Multi-vendor, broad distribution availability
Pb-Free / RoHS — PBF (Pb-free) suffix

Spek dan Sumber

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