UCC21550BQDWRQ1 vs UCC21550BDWR Perbandingan
Perbandingan bersamaan detil UCC21550BQDWRQ1 dari Texas Instruments dan UCC21550BDWR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ AktifTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | UCC21550BQDWRQ1 | UCC21550BDWR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | — |
| Configuration | Two low-side / two high-side / half-bridge | — |
| Dead Time | Programmable (external resistor) | — |
| Disable Function | Yes | Yes |
| UVLO Threshold | 8 V (driver supply) | 8 V (VDD UVLO) |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Paket | 16-SOIC (DW) | 16-SOIC (DW) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat Kerja | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| Konfigurasi Output | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |