UCC21550BQDWRQ1 vs UCC21550BDWR Karşılaştırma
Ayrıntılı yan yana karşılaştırma UCC21550BQDWRQ1 tarafından Texas Instruments ve UCC21550BDWR tarafından Texas InstrumentsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Texas Instruments
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
UCC21550BQDWRQ1 ✓ AktifTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktifÖzellik Karşılaştırması
| Parametre | UCC21550BQDWRQ1 | UCC21550BDWR |
|---|---|---|
| Marka | Texas Instruments | Texas Instruments |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Driver Type | Dual-channel reinforced isolated gate driver | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling | Capacitive coupling, reinforced isolation |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| Isolation Grade | Reinforced isolation | — |
| Number of Channels | 2 | — |
| Configuration | Two low-side / two high-side / half-bridge | — |
| Dead Time | Programmable (external resistor) | — |
| Disable Function | Yes | Yes |
| UVLO Threshold | 8 V (driver supply) | 8 V (VDD UVLO) |
| Target Transistors | Power MOSFET, SiC MOSFET, GaN FET, IGBT | — |
| Automotive Qualification | AEC-Q100 qualified (Q1) | — |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: operating temperature range] | — |
| Paket | 16-SOIC (DW) | 16-SOIC (DW) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Besleme Gerilimi | [DATA_NEEDED: VCCI / VDD operating range] | — |
| Common-Mode Transient Immunity | [DATA_NEEDED: CMTI value] | — |
| Çıkış Konfigürasyonu | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| Programmable Dead Time | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS Durumu | — | [DATA_NEEDED: RoHS status] |