W29N01HVBINF-TR vs W29N01HVBINF Perbandingan

Perbandingan bersamaan detil W29N01HVBINF-TR dari Winbond dan W29N01HVBINF dari Winbond. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum W29N01HVBINF-TR W29N01HVBINF
Merek Winbond Winbond
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori Non-volatile NAND Flash (SLC) Non-volatile NAND Flash (SLC)
Density 1 Gbit (128 MB) —
Organisasi x8 (8-bit multiplexed I/O bus) 128M x 8 (1 page = 2112 B, 1 block = 64 pages)
Antarmuka Parallel ONFI 1.0 NAND Parallel asynchronous x8
Supply Voltage (VCC) 2.7 V to 3.6 V (3.3 V typical) —
Random Access Time 20 ns —
Page Size 2048 + 64 bytes 2112 bytes (2048 data + 64 spare)
Block Size [DATA_NEEDED: block size in pages] 128 KB (64 pages x 2112 bytes)
ECC Requirement 4-bit ECC per 528 bytes —
Program/Erase Cycles 100,000 cycles (SLC typical) —
Paket 63-ball VFBGA, 9 mm x 11 mm 63-ball VFBGA, 9 mm x 11 mm
Suhu Kerja [DATA_NEEDED: industrial temp range] -40 to 85 degrees C (Industrial)
Tipe Mounting Surface Mount Surface Mount
Compliance RoHS compliant, Halogen-Free —
Packaging Tape and Reel (TR suffix) —
Ukuran Memori — 1 Gbit (128 M x 8)
Technology — ONFI 1.0 compliant SLC NAND
Tegangan Pemuat — 2.7 V to 3.6 V (3.3 V typical)
Page Read Access Time — 25 ns (typical)
Number of Blocks — 1024 blocks
Page Program Time — 250 us typical
Block Erase Time — 2 ms typical
ECC Support — On-chip 4-bit ECC per 528 bytes
Endurance — 100 K P/E cycles per block (SLC)
Data Retention — 10 years typical
Status RoHS — Compliant

Spek dan Sumber

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