W29N01HVBINF-TR vs W29N01HVBINF 比較

詳細並排比較 W29N01HVBINF-TR 由 Winbond 與 W29N01HVBINF 由 Winbond. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Winbond
W29N01HVBINF-TR W29N01HVBINF-TR - 1Gb 3V SLC NAND Flash, 63-VFBGA | Winbond

W29N01HVBINF-TR - 1Gb 3V SLC NAND Flash, 63-VFBGA | Winbond

W29N01HVBINF-TR ✓ 啟用中

規格比較

參數 W29N01HVBINF-TR W29N01HVBINF
品牌 Winbond Winbond
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 Non-volatile NAND Flash (SLC) Non-volatile NAND Flash (SLC)
Density 1 Gbit (128 MB) —
組織 x8 (8-bit multiplexed I/O bus) 128M x 8 (1 page = 2112 B, 1 block = 64 pages)
介面 Parallel ONFI 1.0 NAND Parallel asynchronous x8
Supply Voltage (VCC) 2.7 V to 3.6 V (3.3 V typical) —
Random Access Time 20 ns —
Page Size 2048 + 64 bytes 2112 bytes (2048 data + 64 spare)
Block Size [DATA_NEEDED: block size in pages] 128 KB (64 pages x 2112 bytes)
ECC Requirement 4-bit ECC per 528 bytes —
Program/Erase Cycles 100,000 cycles (SLC typical) —
封裝 63-ball VFBGA, 9 mm x 11 mm 63-ball VFBGA, 9 mm x 11 mm
工作溫度 [DATA_NEEDED: industrial temp range] -40 to 85 degrees C (Industrial)
安裝類型 Surface Mount Surface Mount
Compliance RoHS compliant, Halogen-Free —
Packaging Tape and Reel (TR suffix) —
記憶體容量 — 1 Gbit (128 M x 8)
Technology — ONFI 1.0 compliant SLC NAND
供應電壓 — 2.7 V to 3.6 V (3.3 V typical)
Page Read Access Time — 25 ns (typical)
Number of Blocks — 1024 blocks
Page Program Time — 250 us typical
Block Erase Time — 2 ms typical
ECC Support — On-chip 4-bit ECC per 528 bytes
Endurance — 100 K P/E cycles per block (SLC)
Data Retention — 10 years typical
RoHS 狀態 — Compliant

資料表與資源

瀏覽所有產品 建立 BOM 索取報價