W29N01HVBINF-TR vs W29N01HVBINF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci W29N01HVBINF-TR disebabkan oleh Winbond dan W29N01HVBINF disebabkan oleh Winbond. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr W29N01HVBINF-TR W29N01HVBINF
Merek Winbond Winbond
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan Non-volatile NAND Flash (SLC) Non-volatile NAND Flash (SLC)
Density 1 Gbit (128 MB) —
Organisasi x8 (8-bit multiplexed I/O bus) 128M x 8 (1 page = 2112 B, 1 block = 64 pages)
Antaramuka Parallel ONFI 1.0 NAND Parallel asynchronous x8
Supply Voltage (VCC) 2.7 V to 3.6 V (3.3 V typical) —
Random Access Time 20 ns —
Page Size 2048 + 64 bytes 2112 bytes (2048 data + 64 spare)
Block Size [DATA_NEEDED: block size in pages] 128 KB (64 pages x 2112 bytes)
ECC Requirement 4-bit ECC per 528 bytes —
Program/Erase Cycles 100,000 cycles (SLC typical) —
Kemasan 63-ball VFBGA, 9 mm x 11 mm 63-ball VFBGA, 9 mm x 11 mm
Suhu Operasi [DATA_NEEDED: industrial temp range] -40 to 85 degrees C (Industrial)
Jenis Pemasangan Surface Mount Surface Mount
Compliance RoHS compliant, Halogen-Free —
Packaging Tape and Reel (TR suffix) —
Saiz Ingatan — 1 Gbit (128 M x 8)
Technology — ONFI 1.0 compliant SLC NAND
Tegangan Pemberi Arus — 2.7 V to 3.6 V (3.3 V typical)
Page Read Access Time — 25 ns (typical)
Number of Blocks — 1024 blocks
Page Program Time — 250 us typical
Block Erase Time — 2 ms typical
ECC Support — On-chip 4-bit ECC per 528 bytes
Endurance — 100 K P/E cycles per block (SLC)
Data Retention — 10 years typical
Status RoHS — Compliant

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