BTT60101ERBXUMA1 vs BTT62001ENAXUMA1 比較
詳細な並列比較: BTT60101ERBXUMA1 メーカー: Infineon および BTT62001ENAXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BTT60101ERBXUMA1 - 10mΩ Smart High-Side Switch 9A 24V/48V | Infineon
BTT60101ERBXUMA1 ✓ 生産中Infineon
BTT62001ENAXUMA1 - 200mΩ 1.5A Smart High-Side Power Switch | Infineon
BTT62001ENAXUMA1 ✓ 生産中仕様比較
| パラメータ | BTT60101ERBXUMA1 | BTT62001ENAXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.24 | $1.72 |
| Product Type | Smart High-Side Power Switch | Smart High-Side Power Switch |
| Number of Channels | 1 | — |
| On-State Resistance (Typ) | 10 mΩ | — |
| Continuous Load Current | 9 A | 1.5 A |
| Supply Voltage Range | 5 V to 36 V | — |
| Reverse Battery Protection | up to -36 V | — |
| 動作温度範囲 | -40 °C to +150 °C | — |
| Input Control Logic | Active High | — |
| Diagnostic Output | Status pin (ST) and current sense (IS) | Current Sense (IS) pin |
| トポロジー | N-Channel vertical MOSFET with charge pump | 1:1 N-Channel High-Side |
| Process Technology | Infineon Smart6 | — |
| パッケージ | PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad) | PG-TDSO-8-31 (DSO-8 with exposed pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| Targeted Lamp Load | 5 × P21W 24 V or 1 × H55W 12 V | — |
| Compliance | RoHS | — |
| On-State Resistance (Ron) | — | 200 mΩ (typical) |
| Operating Voltage Range | — | 5 V to 48 V |
| Technology | — | Smart6 HV (N-channel vertical MOSFET with charge pump) |
| Protection Features | — | Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery |
| Lamp Drive Capability | — | 1 × R10W at 24 V or 1 × R5W at 12 V |
| 動作温度 | — | -40 °C to +150 °C junction |
| MSLレベル | — | 2A (4 weeks) |
| ECCN | — | EAR99 |
| REACH Status | — | REACH Unaffected |