BTT60101ERBXUMA1 vs BTT62001ENAXUMA1 对比
详细并排对比 BTT60101ERBXUMA1 出自 Infineon 和 BTT62001ENAXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BTT60101ERBXUMA1 - 10mΩ Smart High-Side Switch 9A 24V/48V | Infineon
BTT60101ERBXUMA1 ✓ 量产中Infineon
BTT62001ENAXUMA1 - 200mΩ 1.5A Smart High-Side Power Switch | Infineon
BTT62001ENAXUMA1 ✓ 量产中规格对比
| 参数 | BTT60101ERBXUMA1 | BTT62001ENAXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.24 | $1.72 |
| Product Type | Smart High-Side Power Switch | Smart High-Side Power Switch |
| Number of Channels | 1 | — |
| On-State Resistance (Typ) | 10 mΩ | — |
| Continuous Load Current | 9 A | 1.5 A |
| Supply Voltage Range | 5 V to 36 V | — |
| Reverse Battery Protection | up to -36 V | — |
| 工作温度范围 | -40 °C to +150 °C | — |
| Input Control Logic | Active High | — |
| Diagnostic Output | Status pin (ST) and current sense (IS) | Current Sense (IS) pin |
| 拓扑 | N-Channel vertical MOSFET with charge pump | 1:1 N-Channel High-Side |
| Process Technology | Infineon Smart6 | — |
| 封装 | PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad) | PG-TDSO-8-31 (DSO-8 with exposed pad) |
| 安装类型 | Surface Mount | Surface Mount |
| Targeted Lamp Load | 5 × P21W 24 V or 1 × H55W 12 V | — |
| Compliance | RoHS | — |
| On-State Resistance (Ron) | — | 200 mΩ (typical) |
| Operating Voltage Range | — | 5 V to 48 V |
| Technology | — | Smart6 HV (N-channel vertical MOSFET with charge pump) |
| Protection Features | — | Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery |
| Lamp Drive Capability | — | 1 × R10W at 24 V or 1 × R5W at 12 V |
| 工作温度 | — | -40 °C to +150 °C junction |
| MSL 等级 | — | 2A (4 weeks) |
| ECCN | — | EAR99 |
| REACH Status | — | REACH Unaffected |