BTT60101ERBXUMA1 vs BTT62001ENAXUMA1 Comparison

Detailed side-by-side comparison of BTT60101ERBXUMA1 by Infineon and BTT62001ENAXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BTT60101ERBXUMA1 BTT62001ENAXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Smart High-Side Power Switch Smart High-Side Power Switch
Number of Channels 1 —
On-State Resistance (Typ) 10 mΩ —
Continuous Load Current 9 A 1.5 A
Supply Voltage Range 5 V to 36 V —
Reverse Battery Protection up to -36 V —
Operating Temperature Range -40 °C to +150 °C —
Input Control Logic Active High —
Diagnostic Output Status pin (ST) and current sense (IS) Current Sense (IS) pin
Topology N-Channel vertical MOSFET with charge pump 1:1 N-Channel High-Side
Process Technology Infineon Smart6 —
Package PG-TDSO-14-11 (SOIC-14-EP, Exposed Pad) PG-TDSO-8-31 (DSO-8 with exposed pad)
Mounting Type Surface Mount Surface Mount
Targeted Lamp Load 5 × P21W 24 V or 1 × H55W 12 V —
Compliance RoHS —
On-State Resistance (Ron) — 200 mΩ (typical)
Operating Voltage Range — 5 V to 48 V
Technology — Smart6 HV (N-channel vertical MOSFET with charge pump)
Protection Features — Overload, Short-Circuit, Over-Temperature, Over-Voltage, Reverse Battery
Lamp Drive Capability — 1 × R10W at 24 V or 1 × R5W at 12 V
Operating Temperature — -40 °C to +150 °C junction
MSL Level — 2A (4 weeks)
ECCN — EAR99
REACH Status — REACH Unaffected

Datasheets & Resources

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