IRFH5015TRPBF vs IRFH6200TRPBF 比較
詳細な並列比較: IRFH5015TRPBF メーカー: Infineon および IRFH6200TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFH5015TRPBF | IRFH6200TRPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.62 | $0.53 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET (trench N-channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 155 nC |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| パッケージ | 8-PQFN (5x6) SuperSO8 | 8-PQFN 5x6 mm (Power QFN) |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| 動作温度 | -55C to +150C (TJ max) | — |
| RoHS ステータス | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH6200TRPBF |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mOhm |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max rating] |
| Power Dissipation at Ta (25C) | — | 3.6 W |
| Power Dissipation at Tc (25C) | — | 156 W |
| 動作接合温度 | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (TRPBF suffix = Pb-free T&R) |
| MSLレベル | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Channel Type | — | N-Channel enhancement mode |
| Avalanche Energy Rated | — | Yes |