IRFH5015TRPBF vs IRFH6200TRPBF Comparison
Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IRFH6200TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFH5015TRPBF | IRFH6200TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET (trench N-channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 155 nC |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Package | 8-PQFN (5x6) SuperSO8 | 8-PQFN 5x6 mm (Power QFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Operating Temperature | -55C to +150C (TJ max) | — |
| RoHS Status | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH6200TRPBF |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mOhm |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max rating] |
| Power Dissipation at Ta (25C) | — | 3.6 W |
| Power Dissipation at Tc (25C) | — | 156 W |
| Operating Junction Temperature | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (TRPBF suffix = Pb-free T&R) |
| MSL Level | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Channel Type | — | N-Channel enhancement mode |
| Avalanche Energy Rated | — | Yes |