IRFH5015TRPBF vs IRFH6200TRPBF 비교
다음의 상세 나란히 비교: IRFH5015TRPBF 제조: Infineon 및 IRFH6200TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFH5015TRPBF | IRFH6200TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.62 | $0.53 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET (trench N-channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 155 nC |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| 패키지 | 8-PQFN (5x6) SuperSO8 | 8-PQFN 5x6 mm (Power QFN) |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| 동작 온도 | -55C to +150C (TJ max) | — |
| RoHS 상태 | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFH6200TRPBF |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 49 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mOhm |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max rating] |
| Power Dissipation at Ta (25C) | — | 3.6 W |
| Power Dissipation at Tc (25C) | — | 156 W |
| 동작 접합 온도 | — | -55C to +150C |
| Lead-Free / RoHS | — | Yes (TRPBF suffix = Pb-free T&R) |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] |
| Channel Type | — | N-Channel enhancement mode |
| Avalanche Energy Rated | — | Yes |