IRS2004STRPBF - 200V Half-Bridge Gate Driver SOIC-8 | Infineon
MPN: IRS2004STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
Drop-in alternatives for IRS2004STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2004SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2008SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2104STRPBF
β Drop-Inβ In Stock
$0.45 / Unit
View Datasheet βIRS2101STRPBF
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet βIRS2004STRPBF Maximum Ratings & Electrical Characteristics
| Topology | Half-Bridge Gate Driver |
| Driver Channels | 1 high-side + 1 low-side (dependent) |
| Offset Voltage (Voffset max) | 200 V |
| Output Source Current (typ) | 0.29 A |
| Output Sink Current (typ) | 0.6 A |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Logic Supply (VDD) | 3.3 V to 20 V (logic compatible) |
| Logic Input Compatibility | 3.3 V / 5 V CMOS/LSTTL |
| Shutdown Input | Yes (active) |
| Undervoltage Lockout | Yes (both channels) |
| Bootstrap Operation | Yes (external diode required) |
| Package | SOIC-8 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 C to +125 C |
| RoHS Status | Compliant (Pb-free PBF suffix) |
| MSL Level | MSL2 |
IRS2004STRPBF Pin Configuration
| Pin 1 | VCC β Gate-drive supply (10 V to 20 V) |
| Pin 2 | IN β Logic input (3.3 V/5 V compatible) |
| Pin 3 | /SD β Shutdown (active) |
| Pin 4 | COM β Logic/power ground reference |
| Pin 5 | LO β Low-side gate-drive output |
| Pin 6 | VS β High-side floating supply return / bootstrap return |
| Pin 7 | HO β High-side gate-drive output |
| Pin 8 | VDD β Logic supply (3.3 V to 20 V) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS2004STRPBF is suitable for 7 applications: Low-Voltage BLDC Motor Drives, Class-D Audio Amplifiers, Electronic Ballasts for HID/LED Lighting, Auxiliary SMPS Half-Bridge Converters, Solar Micro-Inverters and Power Optimizers, Industrial Relay and Solenoid Drivers, Uninterruptible Power Supply (UPS) Battery Side.
Low-Voltage BLDC Motor Drives
The IRS2004STRPBF drives the high-side and low-side N-channel MOSFETs of a half-bridge in low-voltage (12 V, 24 V, 48 V) BLDC motor drives used in small fans, pumps, and appliance motors. The 200 V Voffset provides voltage margin on 48 V bus systems, while the 0.29 A source / 0.6 A sink drive currents switch MOSFET gate charges in the tens-of-nC range with sub-microsecond rise/fall times. The built-in shutdown input enables host MCU fault handling, and the dependent HS/LS topology with internal dead-time simplifies control firmware. Companion parts include the IRS2101STRPBF high-side driver for higher-voltage variants and BTS3050EJXUMA1 smart high-side switches for auxiliary loads.
Recommended
Class-D Audio Amplifiers
The IRS2004STRPBF drives the output half-bridge N-channel MOSFETs in small Class-D audio amplifiers up to 200 V bus rails (e.g. +/-100 V split rail). The dependent HS/LS channel with built-in dead-time matches the complementary PWM control scheme used in Class-D modulators, and the matched propagation delay between high-side and low-side channels minimizes audio distortion. The 0.6 A sink current accelerates MOSFET turn-off, reducing switching losses that could otherwise degrade THD+N performance. Companion parts include dedicated audio modulators such as IRS2092 or IRS2093, and output MOSFETs in the IPB020N08N5ATMA1 or BSC090N10NS5 families.
Recommended
Electronic Ballasts for HID/LED Lighting
The IRS2004STRPBF drives the resonant half-bridge in electronic ballasts for HID and high-brightness LED lighting. The 200 V Voffset covers the rectified 120/230 VAC mains bus after PFC, while the 3.3 V/5 V logic-compatible input accepts the timing signals from a small microcontroller or analog oscillator. The shutdown input enables protection logic to disable the ballast during fault conditions (lamp removal, overcurrent), and the undervoltage lockout prevents the half-bridge from operating below safe gate-drive voltage. The driver supports switching frequencies in the 30-200 kHz range typical of electronic ballasts. Companion parts include TLE42744GSV33HTMA1 LDO for logic supply and IRF520NPBF or similar for low-side synchronous rectification in PFC stages.
Recommended
Auxiliary SMPS Half-Bridge Converters
The IRS2004STRPBF drives the primary-side half-bridge in low- to medium-power isolated DC-DC converters (telecom auxiliary supplies, industrial 24 V bus converters, server standby rails). The 200 V Voffset accommodates 170 V rectified bus rails typical in universal-input PFC front ends, and the bootstrap operation enables direct high-side drive without an isolating transformer. The shutdown input interfaces with housekeeping logic for overcurrent and overtemperature protection, while matched propagation delays support fixed-frequency hard-switched or resonant topologies. Companion parts include ICE2QR2280GXUMA1 QR controller or ICE3PCS03GXUMA1 PFC controller for the upstream control stage.
Recommended
Solar Micro-Inverters and Power Optimizers
The IRS2004STRPBF drives the half-bridge in small solar micro-inverters (sub-300 W) and panel-level DC power optimizers. The 200 V Voffset handles the rectified PV panel voltage up to 150 V open-circuit, and the compact SOIC-8 package enables dense PCB layouts inside IP67-rated module-mount enclosures. The shutdown input allows the panel optimizer to disconnect during grid faults (anti-islanding) and the undervoltage lockout ensures the half-bridge only switches when sufficient PV voltage is present. Companion parts include TLE9180D31QKXUMA1 motor/gate driver SoC for integrated power conversion and IPW60R190C6FKSA1 high-voltage MOSFET for higher-voltage designs.
Recommended
Industrial Relay and Solenoid Drivers
The IRS2004STRPBF provides high-side + low-side drive capability for industrial relay and solenoid switching, replacing discrete level-shift and bootstrap circuits. The 200 V Voffset handles 110/220 V industrial bus switching, and the 0.6 A sink current drives larger IGBT or MOSFET output stages that can sink tens of amps to inductive loads. The shutdown input enables fast safety cut-off in compliance with industrial machinery safety standards, while the wide 10 V to 20 V gate-drive supply range supports standard industrial 15 V or 18 V rails. Companion parts include IRF540NSTRLPBF output MOSFET and TLD21313EPXUMA1 LED driver for status indication.
Recommended
Uninterruptible Power Supply (UPS) Battery Side
The IRS2004STRPBF drives the half-bridge on the low-voltage battery side of a small UPS system (12 V, 24 V, 48 V battery to 120/230 VAC output stage). The compact SOIC-8 footprint allows dense layout, and the dependent HS/LS channel with built-in dead-time matches the synchronous-rectification control scheme used in bidirectional UPS converters. The shutdown input enables the host controller to disable the converter during fault or sleep modes, while the wide VCC range (10 V to 20 V) accepts standard 12 V or 18 V intermediate rails. Companion parts include BSC014N04LSATMA1 40V MOSFET for low-voltage battery side and IGD06N60TATMA1 600V IGBT for grid-side inverter bridge.
Recommended
Recommended Products Summary
Engineering reference data for IRS2004STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2004SPBF | IRS2008SPBF | IRS2104STRPBF | IRS2101STRPBF |
|---|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 | SOIC-8 | SOIC-8 | SOIC-8 |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Topology | Half-bridge (dependent HS/LS) | Half-bridge (dependent HS/LS) | Half-bridge (dependent HS/LS) | Half-bridge (independent HS/LS) | High-side only |
| Offset Voltage (max) | 200 V | 200 V | 200 V | 600 V | 600 V |
| Output Source Current (typ) | 0.29 A | 0.29 A | [DATA_NEEDED] | 0.29 A | 0.29 A |
| Output Sink Current (typ) | 0.6 A | 0.6 A | [DATA_NEEDED] | 0.6 A | 0.6 A |
| Shutdown Input | Yes | Yes | Yes | Yes | No |
| Recommended For New Design | No (use IRS2008S) | No (use IRS2008S) | Yes (current generation) | Yes | Yes |
Key Differentiators
- Built-in shutdown input on a 200 V half-bridge SOIC-8 driver (vs IRS2101STRPBF)
- Dependent HS/LS channel with built-in dead-time (vs IRS2104STRPBF)
- 200 V Voffset for cost-effective low-voltage designs (vs IRS2110SPBF (600 V, SOIC-16))
Design Notes
Estimated: With VCC = 15 V and quiescent current in the low-mA range, the IRS2004STRPBF draws very little DC current from VCC; however, the gate-drive charge current at typical 0.29 A source / 0.6 A sink can create substantial dynamic currents. Decouple VCC and VDD with at least a 0.1 uF ceramic capacitor close to each supply pin, plus a bulk 10 uF electrolytic to handle bootstrap recharge transients. Bootstrap diode (typically ultrafast or Schottky UF4007/BAT46) and bootstrap capacitor (1 uF to 10 uF ceramic) must be sized for the worst-case high-side duty cycle and switching frequency. If the high-side is on for >50% of each cycle, consider a charge pump or larger bootstrap capacitor to prevent Vs sagging below UVLO.
Estimated: SOIC-8 has a typical theta_JA of approximately 100-150 C/W on a 1 oz 2-layer board with minimum copper pours. Gate-driver ICs dissipate power mostly from the output stage switching: P = Vgate * Qg * fsw. For example, with VCC = 15 V, Qg = 50 nC, fsw = 100 kHz, dissipation is roughly 75 mW per channel, or ~150 mW total - well within SOIC-8 capability. For higher fsw or larger Qg MOSFETs, increase copper area on the COM pin and add a thermal via array under the exposed pad (if EP variant). Keep junction temperature below +125 C maximum by maintaining case temperature well below +100 C.
Keep the high-side gate-drive loop (HO - VS - gate-source of high-side MOSFET - HO return) as small as physically possible to minimize parasitic inductance that can cause Vs ringing and overshoot beyond the 200 V Voffset rating. Place the bootstrap diode and capacitor within 5 mm of the VCC and VS pins. Route COM as a wide, low-inductance trace or pour; poor COM routing can inject ground bounce into logic signals and cause spurious HO/LO switching. Keep logic traces (IN, /SD) away from HO/VS switching nodes by at least 3 mm to avoid capacitive coupling that can re-trigger the input.
Three common pitfalls with the IRS2004STRPBF: (1) Omitting the bootstrap diode or using a slow-recovery rectifier causes Vs to sag and the high-side to drop out under continuous high duty cycle. Always use a fast-recovery or Schottky diode rated for VCC + Voffset (>=250 V). (2) Driving a half-bridge where both HS and LS can momentarily conduct (shoot-through) destroys the power stage; rely on the IC's built-in dead-time AND ensure the upstream PWM logic prevents overlap. (3) Assuming 0.29 A source is sufficient for very large MOSFETs with Qg > 200 nC - the rise time will be sluggish and switching losses high; in that case select a higher-current driver from the IRS2110/IRS2181 family.
Compliance Information
Pb-free (PBF suffix) per Infineon part numbering. Not AEC-Q100 qualified - for automotive applications evaluate AEC-Q100 qualified gate drivers in the Infineon portfolio. RoHS/REACH compliance confirmed per manufacturer datasheet ordering information.
