K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung
部品番号: K3K8K80BM-MGCP ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K3K8K80BM-MGCP 概要
DRAM (Dynamic Random Access Memory) is the workhorse volatile memory of modern electronics: it stores each bit as charge on a capacitor within a transistor cell, offering far higher density and lower cost per bit than SRAM or flash. LPDDR5 (Low Power Double Data Rate 5) is the mobile-optimized member of the DDR SDRAM family defined for smartphones, tablets, automotive infotainment, and edge AI compute, where bandwidth per watt matters more than absolute capacity per module.
Key features of this device include its 64 Gb single-die density, x32 I/O organization, and 6400 Mbps pin speed, which together deliver very high aggregate bandwidth in a compact footprint. The LPDDR5 architecture supports lower operating voltages than LPDDR4X, reducing I/O power during burst transfers, and the MGCP suffix denotes Samsung's standard lead-free, halogen-free ball metallurgy and RoHS-compliant packaging.
Technically, the device uses a CMOS core with bank-grouped architecture, on-die termination, and DVFS-friendly multi-rail power (VDD1, VDD2H, VDDQ) enabling dynamic voltage scaling between active and idle states. The 315-ball FBGA footprint with controlled ball pitch supports high-speed signal integrity on 8- or 16-bit channel routing with point-to-point SoC connections.
Typical applications include flagship smartphone application processor memory, AI accelerator HBM companion buffers, automotive ADAS domain controllers, and high-performance embedded compute modules where 25-50 GB/s bandwidth per package is required.
When designing with this device, follow JEDEC LPDDR5 routing guidelines: length-match DQ to DQS within tight skew budgets, and use the SoC's MIPI PI-compatible PHY for initialization and DVFS sequencing.
This page synthesizes distributor inventory, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: K3K8K80BM-MGCP — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K3K8K80BM-MGCP （同一形状・フットプリント） — 相違点: Package, Interface, Memory Type, Density, Organization.
クイック比較ツール — 並列比較する代替部品を選択:
K3LKCKC0BM-MGCP
✅ ドロップイン✓ 在庫あり
$65.625 / 個
データシートを見る →K3LKBKB0BM-MGCP
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$46.62 / 個
データシートを見る →K3LK8K80CM-MFCP
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K3LKJKJ0CM-MUCP
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K3KL8L80CM-MGCT
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K3K8K80BM-MGCP 最大定格＆電気的特性
| メモリタイプ | LPDDR5 SDRAM (DRAM) |
| Density | 64 Gb |
| メモリ構成 | 2G x 32 |
| データレート | 6400 Mbps |
| インターフェース | LPDDR5 (CMOS) |
| パッケージ | FBGA-315 (PBGA315) |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V |
| 動作温度 | -25C to +85C |
| 実装タイプ | Surface Mount |
| Technology | CMOS |
| Memory Category | Volatile DRAM |
| RoHS ステータス | Compliant |
| Lead Free | Yes |
| Application Class | Specialized ICs / Memory |
| I/O Width | 32-bit |
K3K8K80BM-MGCP fbga-315 (pbga315) ピン配置ガイド
K3K8K80BM-MGCP (fbga-315 (pbga315) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K3K8K80BM-MGCP.
詳細は データシート をご参照ください。
主な用途
K3K8K80BM-MGCP の用途: 6 件s: Flagship Smartphone Main Memory, Edge AI and NPU Accelerator Memory, Automotive Infotainment and ADAS Domain Controllers, 5G Networking and Edge Servers, High-Resolution Camera and Vision Systems, Industrial Compute and Robotics Controllers.
Flagship Smartphone Main Memory
The K3LKCKC0BM-MGCP's 64 Gb density and 6400 Mbps LPDDR5 interface make it a natural main-memory device for flagship smartphones, where a 32-bit channel delivers roughly 25.6 GB/s of peak bandwidth for application processors. Its 500 mV VDDQ rail with DVFS support reduces I/O power during idle and light-load phases, directly extending battery life in always-on use cases. The part is placed point-to-point on the SoC's LPDDR5 channel with length-matched routing; unlike LPDDR4X, LPDDR5's bank-group architecture and improved prefetch efficiency sustain high bandwidth at lower clock rates, cutting both power and EMI. Designers should budget the four-rail power tree (500 mV, 900 mV, 1.05 V, 1.8 V) in the PMIC early, since rail sequencing defines boot reliability.
おすすめ
Edge AI and NPU Accelerator Memory
Edge AI inference workloads are bandwidth-hungry: transformer and CNN models stream weights and activations continuously, so memory bandwidth often limits TOPS utilization more than compute. The K3LKCKC0BM-MGCP addresses this with 6400 Mbps per pin and a 64 Gb capacity that holds large on-device models, delivering approximately 25.6 GB/s per package and scaling to 51.2 GB/s with two packages on two channels. Its -25C to +85C range covers industrial edge deployments such as smart cameras and robotics controllers. In these designs the LPDDR5 sits next to the NPU with short, tightly matched traces and solid VDDQ plane pours; the low 500 mV VDDQ swings make signal-integrity discipline critical, and on-die termination reduces the termination power penalty versus LPDDR4.
おすすめ
Automotive Infotainment and ADAS Domain Controllers
Modern cockpit and ADAS domain controllers run multiple displays, camera fusion, and navigation stacks concurrently, requiring multi-gigabyte DRAM with high sustained bandwidth. The K3LKCKC0BM-MGCP's 64 Gb capacity and LPDDR5 6400 Mbps rate support 4-8 display streams plus surround-view camera processing, with the -25C to +85C operating range covering in-cabin and most protected under-dash environments. Its low-voltage rails ease thermal budgeting in fanless automotive ECU enclosures. Designers must confirm automotive qualification level (AEC-Q100 grade) with Samsung for safety-critical paths, and should implement in-vehicle DVFS policies to manage junction temperature in hot-soak conditions. The FBGA-315 footprint supports the fine-pitch, low-profile mounting typical of automotive compute modules.
おすすめ
5G Networking and Edge Servers
5G small cells, edge gateways, and microservers need dense, power-efficient DRAM close to the network processor to buffer packets and run containerized workloads. The K3LKCKC0BM-MGCP provides 8 GB per package at LPDDR5 speeds, and multiple packages on independent channels scale bandwidth to 50+ GB/s without the module-height penalty of DDR4 SO-DIMMs, enabling fanless and conformally-cooled designs. Its 1.8 V and 1.05 V rails integrate cleanly with standard telecom PMICs, and DVFS lets the system trade bandwidth for power during traffic lulls. Layout should keep the DRAM within a few centimeters of the SoC, since LPDDR5 is a point-to-point interface without registered buffering; solid ground reference planes under address/command nets preserve timing margin at 6400 Mbps.
おすすめ
High-Resolution Camera and Vision Systems
Machine-vision cameras, medical imaging modules, and surveillance heads generate continuous multi-hundred-MB/s frame streams that must be buffered, tone-mapped, and often AI-enhanced on-device. The K3LKCKC0BM-MGCP's combination of 8 GB capacity and ~25.6 GB/s bandwidth lets an ISP hold multiple 4K/8K frame buffers plus a neural network simultaneously, avoiding the frame drops that smaller memory configurations suffer. The -25C to +85C range suits outdoor surveillance housings, and low VDDQ operation keeps the imaging chain's noise budget clean when power rails are well decoupled. Place the DRAM away from the sensor's analog front end and use separate power planes; LPDDR5's burst-heavy traffic can couple switching noise into analog video rails if ground return paths are shared.
おすすめ
Industrial Compute and Robotics Controllers
Industrial PCs, robot motion controllers, and CNC interfaces increasingly run Linux with real-time extensions, needing gigabytes of RAM plus bandwidth for sensor fusion, path planning, and HMI rendering. The K3LKCKC0BM-MGCP delivers 8 GB of LPDDR5 in a compact 315-ball package tolerant of -25C to +85C industrial ambient temperatures, and its low operating voltages reduce cooling requirements in sealed enclosures. Multiple packages can be channel-interleaved to reach the sustained bandwidth that multi-axis servo loops and camera-based inspection demand. Because LPDDR5 is soldered-down, it also improves vibration reliability versus SODIMM sockets on moving machinery. Firmware teams should implement Samsung-recommended initialization and training sequences at boot, since LPDDR5 link training is mandatory at 6400 Mbps.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K3K8K80BM-MGCP — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K3LKCKC0BM-MGCP | K3LKBKB0BM-MGCP | K3LK8K80CM-MFCP | K3LKJKJ0CM-MUCP |
|---|---|---|---|---|---|
| Package | FBGA-315 (PBGA315) | FBGA-315 - same | FBGA-315 - same | FBGA-315 - same | FBGA-315 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM |
| RoHS | Compliant | Compliant | Compliant (family standard) | Compliant (family standard) | Compliant (family standard) |
主な差別化要因
- Verified 64 Gb density at 6400 Mbps in a single package （vs K3LKBKB0BM-MGCP)
- Quad-rail low-power operation with DVFS （vs K3LK8K80CM-MFCP)
- RoHS-compliant MGCP packaging suffix （vs K3LKJKJ0CM-MUCP)
設計ノート
LPDDR5 at 6400 Mbps demands disciplined point-to-point routing: length-match each DQ byte lane to its DQS within the skew budget in the Samsung datasheet, keep address/command nets on an unbroken ground reference plane, and avoid crossing plane splits under the FBGA-315 footprint. Use the SnapEDA verified footprint for K3LKCKC0BM-MGCP to guarantee ball A1 orientation and land-pattern correctness, and validate the stackup impedance (single-ended ~40 ohm, differential ~80 ohm class) before tape-out.
The device requires four rails (approximately 500 mV VDDQ, 900 mV, 1.05 V, and 1.8 V) with MIPI-compliant sequencing. Select a PMIC with dedicated LPDDR5 rails and follow the Samsung power-up order exactly; incorrect sequencing can prevent link training or damage the I/O. Estimated: at 6400 Mbps with DVFS active, VDDQ current dominates and can reach amperes per package - budget decoupling with multiple 10uF ceramics per rail plus bulk capacitance near the balls.
At 6400 Mbps, eye margins are tight: LPDDR5 link training (performed by the SoC PHY at every boot) is mandatory, not optional. Simulate the channel with IBIS models from Samsung and confirm eye height/width at the receiver with margin for temperature extremes (-25C to +85C). Keep stubs nonexistent (direct BGA escape), limit via transitions on DQ/DQS, and verify with the JEDEC LPDDR5 routing guidelines as referenced in the SoC vendor's design guide.
コンプライアンス情報
RoHS compliant per JLCPCB part listing; MGCP suffix denotes lead-free RoHS-compliant packaging. REACH, halogen-free, and conflict-minerals declarations not present in verified data - request certificates from Samsung or distributor.
