K3KL5L50DM-BGCU - LPDDR5X 128Gb 8533Mbps DRAM | Samsung
部品番号: K3KL5L50DM-BGCU ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K3KL5L50DM-BGCU 概要
LPDDR5X (Low Power Double Data Rate 5X) is an JEDEC-defined evolutionary step of the LPDDR5 SDRAM standard, aimed at mobile, automotive, and edge-AI computing systems. In the memory hierarchy, DRAM sits as the main system memory between the processor and non-volatile storage, providing high-bandwidth working memory; LPDDR variants optimize this role for battery-powered and thermally constrained devices by lowering I/O and core voltages and adding deep power-down states.
Key characteristics of this part include the 128 Gb monolithic density, the 8533 Mbps (8.5 Gbps) transfer rate per data pin, and the ultra-low-power architecture typical of Samsung's LPDDR5X portfolio, which supports dynamic voltage scaling and advanced sleep modes. The high pin speed translates directly into memory bandwidth critical for large-language-model inference, 5G modems, and high-resolution imaging pipelines.
Technically, LPDDR5X devices use bank group architectures with 16n prefetch, on-die termination, and command/address training to sustain multi-gigabit signaling. Samsung's premium LPDDR5X line further emphasizes power efficiency through enhanced ECC features and refined process nodes, allowing smartphone SoCs and automotive ADAS platforms to exploit full bandwidth within tight thermal envelopes.
Typical applications include flagship smartphone and tablet main memory (often stacked as multi-die packages), AI accelerator companion memory in edge servers, automotive infotainment and ADAS domains, and high-performance embedded modules.
A key design consideration: LPDDR5X signal integrity at 8.5 Gbps demands strict fly-by topology routing, length-matched traces, and SoC memory-controller training support; dropping to an LPDDR5-only controller limits operation to 6400 Mbps class speeds.
This page synthesizes distributor stock data (16,750 pcs reported as of Aug 31, 2026), same-family alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: K3KL5L50DM-BGCU — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K3KL5L50DM-BGCU （同一形状・フットプリント） — 相違点: Memory Type, Density, Interface, Package, Power Efficiency.
クイック比較ツール — 並列比較する代替部品を選択:
K3KL3L30DM-BGCU
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$45.9375 / 個
データシートを見る →K3KL3L30CM-BGCU
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
価格はお問い合わせください
データシートを見る →K3LK3L30CM-BGCU
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$29.6 / 個
データシートを見る →K3KL4L40EM-BGCU
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$78.75 / 個
データシートを見る →K3LK4L40DM-BGCT
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$40.5 / 個
データシートを見る →K3KL5L50DM-BGCU 最大定格＆電気的特性
| メモリタイプ | LPDDR5X SDRAM |
| Density | 128 Gb (16 GB) |
| データレート | 8533 Mbps per pin |
| 実装タイプ | Surface Mount (BGA) |
| インターフェース | LPDDR5X (JEDEC low-power DRAM interface) |
| Prefetch | 16n (LPDDR5/5X architecture) |
| Power Efficiency | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) |
| RoHS ステータス | unknown |
| Production Status | In production (in stock at distributors) |
K3KL5L50DM-BGCU standard ピン配置ガイド
K3KL5L50DM-BGCU (standard パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K3KL5L50DM-BGCU.
詳細は データシート をご参照ください。
主な用途
K3KL5L50DM-BGCU の用途: 6 件s: Flagship Smartphone Main Memory, Automotive ADAS and Infotainment, Edge AI Inference Accelerators, Tablets and Mobile Computing Devices, 5G Networking and Communication Infrastructure, High-Resolution Camera and Vision Systems.
Flagship Smartphone Main Memory
The K3KL5L50DM-BGCU is a natural fit for flagship smartphone main memory, where its 128 Gb (16 GB) density and 8533 Mbps pin speed deliver the bandwidth modern SoCs demand for multitasking, gaming, and on-device AI. Samsung's LPDDR5X family provides about 20% better power efficiency than LPDDR5, which directly extends battery life in thermally constrained handset enclosures. Placed on the SoC memory bus in a fly-by or point-to-point topology, the device supports deep sleep and dynamic voltage-frequency scaling so idle power drops sharply between burst workloads. The trade-off is strict layout discipline: 8.5 Gbps signaling demands length-matched traces and controller training.
おすすめ
Automotive ADAS and Infotainment
Samsung explicitly positions the LPDDR5X family, including parts of this class, for automotive devices, citing 8.5 Gbps speeds and improved efficiency. In ADAS central computers, the K3KL5L50DM-BGCU's 128 Gb density buffers fused data streams from multiple cameras, radar, and LiDAR sensors, while the 8533 Mbps rate sustains the hundreds of GB/s that perception and path-planning algorithms consume. For digital cockpit and infotainment domains, the same bandwidth supports multi-display rendering and voice-assistant inference. Automotive deployment requires confirming the correct temperature-grade suffix and Samsung's automotive qualification path, since mobile-coded parts may not carry the full AEC-level pedigree of automotive ordering codes.
おすすめ
Edge AI Inference Accelerators
On-device large language model and vision transformer inference are memory-bandwidth bound, making the K3KL5L50DM-BGCU's 8533 Mbps LPDDR5X interface a strong match for edge AI accelerators. With 128 Gb (16 GB) per package, weights and activations for quantized 7B-class models fit locally, and multiple devices can be paired for 32 GB-class configurations. Compared with LPDDR5 at 6400 Mbps, the 33% pin-speed increase of LPDDR5X translates directly into higher tokens-per-second inference, while Samsung's efficiency improvements reduce thermal throttling in fanless enclosures. Designers should budget for the LPDDR5X training flow and verify the accelerator's memory-controller supports 8.5 Gbps signaling before committing to the footprint.
おすすめ
Tablets and Mobile Computing Devices
Premium tablets and thin-and-light notebooks with ARM-based SoCs use LPDDR5X as unified system memory, and the K3KL5L50DM-BGCU's 16 GB per package matches the 16 GB configurations common in these products. The 8533 Mbps data rate feeds both CPU and integrated GPU from a shared memory pool, which is essential for 120 Hz display rendering and video editing workloads. Samsung's roughly 20% power-efficiency gain over LPDDR5 reduces heat in passively cooled chassis, sustaining peak performance longer. Because LPDDR5X is typically soldered down (no SO-DIMM), the BGCU BGA footprint is permanent - memory sizing decisions must be made at board design time, favoring the highest density that cost targets allow.
おすすめ
5G Networking and Communication Infrastructure
Samsung's LPDDR5X materials cite IT industry applications, and 5G small cells, baseband cards, and edge gateways benefit from the K3KL5L50DM-BGCU's combination of bandwidth and power efficiency. The 8533 Mbps interface keeps packet-buffer and forwarding-table working sets responsive for line-rate processing, while LPDDR5X's power states reduce energy draw in thermally limited outdoor enclosures. The 128 Gb density supports the large buffers needed for network acceleration, deep-packet inspection, and edge caching. Designers operating in harsh environments must verify the operating temperature grade of the specific ordering code, since standard mobile-grade temperature ranges may not cover extended industrial requirements without the appropriate suffix variant.
おすすめ
High-Resolution Camera and Vision Systems
Computational photography modules, machine-vision inspection systems, and video conferencing bars all burst large frame buffers at high frame rates, a workload aligned with the K3KL5L50DM-BGCU's 8533 Mbps bandwidth. Capturing 8K or multi-camera 4K streams requires writing hundreds of MB per frame burst; the 16 GB density of this device sustains deep frame pipelines and on-the-fly AI enhancement (denoise, HDR fusion, depth estimation) without spilling to slower storage. Samsung's LPDDR5X efficiency gains matter in battery-powered camera platforms, and the BGA package supports compact module designs. Fly-by routing and impedance control at 8.5 Gbps are the primary engineering constraints for vision-system boards.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K3KL5L50DM-BGCU — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K3KL3L30DM-BGCU | K3KL3L30CM-BGCU | K3LK3L30CM-BGCU | K3KL4L40EM-BGCU | K3LK4L40DM-BGCT |
|---|---|---|---|---|---|---|
| Package | FBGA (BGCU code, 496-ball class per distributor category) | FBGA (BGCU) - same coding | FBGA (BGCU) - same coding | FBGA (BGCU) - same coding | FBGA (BGCU) - same coding | FBGA (BGCT) - adjacent coding |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X | LPDDR5X | LPDDR5X | LPDDR5X (stacked) | LPDDR5X | LPDDR5X (stacked) |
| Power Efficiency vs LPDDR5 | approx. 20% better (Samsung family claim) | approx. 20% better (LPDDR5X family) | approx. 20% better (LPDDR5X family) | approx. 20% better (LPDDR5X family) | approx. 20% better (LPDDR5X family) | approx. 20% better (LPDDR5X family) |
主な差別化要因
- Top-tier LPDDR5X speed （vs LPDDR5-class DRAM (e.g., lower K3KL grades at 6400 Mbps class))
- Large single-package density （vs K3KL3L30DM-BGCU (lower-density same-family part))
- Family power-efficiency gain （vs K3LK4L40DM-BGCT (stacked family variant))
設計ノート
At 8533 Mbps, LPDDR5X signaling is extremely sensitive to channel loss and ISI. Maintain controlled-impedance (typically 40-50 ohm single-ended) routing, keep trace lengths matched within the SoC vendor's specified skew window, minimize stubs and layer transitions, and use the Samsung-recommended on-die termination settings. The memory controller's read/write training (VrefDQ, per-byte delay line) must be re-run for every board revision. Simulate the full channel with IBIS-AMI models obtained from Samsung under NDA before tape-out; do not rely on LPDDR5-era models at 8.5 Gbps.
LPDDR5X uses split rails (VDD2/VDDQ/VDD1-class supplies per the JEDEC LPDDR5X definition; exact voltages are NDA data for this part - verify in the Samsung datasheet). Each rail needs a tight PDN with bulk plus high-frequency ceramic decoupling placed at the BGA via field. Estimated: at 8.5 Gbps, I/O switching current dominates VDDQ; budget per Samsung's IDD measurement conditions rather than LPDDR5 figures, since dynamic per-pin current scales with data rate. Enable DVFSC/DVFSP and self-refresh aggressively in firmware to exploit the family's roughly 20% efficiency advantage.
LPDDR5X ball maps are vendor- and package-code-specific: the BGCU, BGCT, JGCT, and MGCU suffixes denote different package outlines, ball assignments, or grade coding, and are not interchangeable without footprint and schematic changes. Second, do not assume your SoC memory controller supports 8533 Mbps - many support LPDDR5X only to lower speed grades. Third, Samsung's detailed datasheets are NDA-controlled; ordering code suffixes (temperature/qualification grade) must be confirmed with Samsung or franchised distribution before committing to automotive or industrial designs.
コンプライアンス情報
Reviewed distributor listings explicitly state RoHS Status unknown for this MPN. Samsung production LPDDR5X is typically RoHS-compliant/lead-free, but no public certificate was found in the provided data - obtain Samsung's official environmental declaration for this ordering code.
