K4RHE086VB-BCWM - DDR5 24Gb 5600Mbps SDRAM | Samsung
部品番号: K4RHE086VB-BCWM ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $18.5 | $18.50 |
| 10 | $17.2 | $172.00 |
| 100 | $15.8 | $1,580.00 |
| 500 | $14.6 | $7,300.00 |
| 1,000 | $13.4 | $13,400.00 |
K4RHE086VB-BCWM 概要
DRAM (Dynamic Random Access Memory) is a semiconductor memory that stores each bit in a separate capacitor within an integrated circuit. Within the memory hierarchy, DRAM sits as main system memory between CPU caches and storage. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, successor to DDR4, offering higher densities per die, on-die ECC, and improved power efficiency relative to DDR4.
Key features of the K4RHE086VB-BCWM include 24Gb density in a single die, 5600 Mbps/pin data rate, a 1.1V core voltage, and the DDR5 feature set including on-die ECC and improved bank architecture for higher effective bandwidth. The x8 organization suits ECC-protected server channels where 72-bit buses are built from 9 x8 components.
The device implements the DDR5 architecture with bank group parallelism and burst length 16, delivering high sustained bandwidth at moderate frequencies. DLL-enabled mode operation governs timing specifications per Samsung's DDR5 specification documents; timing parameters for this speed grade follow Samsung's DDR5 device specification family for 5600 Mbps operation.
Typical applications include data center server RDIMM and module assemblies, high-performance workstation memory, premium PC DIMMs, and industrial systems requiring long-term DDR5 supply continuity. The x8 organization is particularly suited to ECC server implementations.
When designing in this device, verify controller compatibility with 24Gb address mapping, since 24Gb DDR5 requires specific row/column addressing support; not all memory controllers accept non-power-of-two densities.
This page synthesizes distributor inventory data, drop-in alternatives within the Samsung DDR5 family, and practical design notes not found in the manufacturer datasheet. Pricing is quotation-based as of 2026-09-04.
ドロップイン代替品: K4RHE086VB-BCWM — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K4RHE086VB-BCWM （同一形状・フットプリント） — 相違点: Interface, Package, Data Rate, Organization, Density.
クイック比較ツール — 並列比較する代替部品を選択:
K4RHE086VP
✅ ドロップイン✓ 在庫あり
$9.9 / 個
データシートを見る →K4RAH086VB-BCWM
✅ ドロップイン✓ 在庫あり
$44.5455 / 個
データシートを見る →K4RAH086VP-BCWM
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K4RAH086VE-BCWM
✅ ドロップイン✓ 在庫あり
$7.6 / 個
データシートを見る →K4RHE086VB-BCWM 最大定格＆電気的特性
| メモリタイプ | DDR5 SDRAM |
| Density | 24 Gb |
| メモリ構成 | 2G x 8 |
| データレート | 5600 Mbps/pin |
| Core Voltage | 1.1 V |
| インターフェース | DDR5 (double data rate, 5th generation) |
| Burst Length | 16 (BL16, DDR5 standard) |
| On-Die ECC | Yes (DDR5 standard feature) |
| パッケージ | FBGA (surface mount) |
| 実装タイプ | Surface Mount |
| Application Segment | Data center, industrial, premium PC |
K4RHE086VB-BCWM fbga (surface mount) ピン配置ガイド
K4RHE086VB-BCWM (fbga (surface mount) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K4RHE086VB-BCWM.
詳細は データシート をご参照ください。
主な用途
K4RHE086VB-BCWM の用途: 6 件s: Data Center Server Memory, Premium PC and Workstation DIMMs, Industrial Systems with Long-Term Availability, AI and Accelerator Compute Memory, Networking and Communication Equipment, Embedded and Storage Controllers.
Data Center Server Memory
The K4RHE086VB-BCWM is purpose-built for data center DDR5 memory subsystems. Its 24Gb density in a 2G x 8 organization lets module designers build high-capacity RDIMMs with fewer components per 72-bit ECC channel - nine x8 devices deliver 27GB per rank. Running at 5600 Mbps and 1.1V, it provides the bandwidth modern server CPUs require while improving power efficiency versus DDR4, a critical factor at rack scale. Distributors (SMC, serverramstore) explicitly position this part for server deployments requiring long-term supply continuity. Designers should verify platform support for 24Gb address mapping and complete DDR5 training validation at 5600 Mbps on the target CPU/memory-controller combination before volume production.
おすすめ
Premium PC and Workstation DIMMs
For premium PC and professional workstation platforms, the K4RHE086VB-BCWM enables enthusiast-class UDIMM and CUDIMM designs at 5600 Mbps. Kingrole markets this device as transforming data centers, premium PCs, and professional workstations, reflecting its dual role in client computing. The 24Gb density allows 48GB-class module capacities that DDR4 could not achieve with comparable component counts, and DDR5's on-die ECC improves data integrity for workstation workloads such as content creation and CAD. The 1.1V operation reduces module power versus DDR4-5600-equivalent designs. Client platforms must expose 24Gb row/column addressing in BIOS/SPD tables; validate memory training on the specific CPU- chipset combination during module qualification.
おすすめ
Industrial Systems with Long-Term Availability
Industrial computing platforms - factory controllers, edge servers, and test equipment - need memory components with predictable long-term supply. SMC notes the K4RHE086VB-BCWM is widely deployed in DDR5 memory solutions for industrial systems where long-term availability is required, making it a strong choice for extended-lifecycle designs. Its 24Gb density supports 16GB+ memory footprints per x8 device, and DDR5's on-die ECC improves reliability in electrically noisy factory environments. At 5600 Mbps, it delivers headroom for data-intensive industrial workloads such as machine-vision buffering. Designers should qualify Samsung's industrial supply program terms and lock date-code requirements in procurement agreements to guarantee consistency across the product's service life.
おすすめ
AI and Accelerator Compute Memory
AI training and inference servers demand maximum memory bandwidth and capacity per socket. The K4RHE086VB-BCWM's 5600 Mbps data rate and 24Gb density let accelerator-adjacent host memory subsystems reach high aggregate bandwidth - eight channels of x72 ECC buses built from this device deliver multi-hundred-GB/s performance per socket. Fewer, denser components per module also reduce the load on DDR5 command/address buses, improving signal integrity at high data rates. DDR5's on-die ECC plus module-level CRC safeguards large in-memory datasets used in AI workloads. For AI platforms, pair this DRAM with Samsung's qualifying module families and verify CUDIMM/RDIMM interoperability on the target CPU platform before ramping production volume.
おすすめ
Networking and Communication Equipment
High-throughput networking platforms - routers, switches, and 5G infrastructure - use DDR5 main memory for packet buffering, flow tables, and control-plane software. The K4RHE086VB-BCWM fits these designs with 24Gb density and 5600 Mbps bandwidth, supporting deep packet buffers and large routing tables at 1.1V operating power. DDR5's improved bank architecture sustains the random-access patterns typical of network workloads better than DDR4. Its x8 organization supports ECC-protected subsystems essential for carrier-grade reliability. Thermal design matters in convection-cooled network chassis: at 24Gb density, ensure junction temperatures stay within the DDR5 specification by modeling airflow over the FBGA packages and derailing refresh-related power at elevated ambient temperatures.
おすすめ
Embedded and Storage Controllers
Enterprise SSD controllers, smart NICs, and embedded x86/ARM platforms use DDR5 DRAM as firmware execution memory and write-cache buffers. The K4RHE086VB-BCWM's 24Gb density provides 3GB per x8 device, ample for sophisticated controller firmware with hardware-backed caching, while its 5600 Mbps rate minimizes latency for buffer exchanges. Samsung's own SSD controller ecosystem (e.g., K9-series NAND partners) commonly pairs DDR5 DRAM with high-capacity NAND for enterprise storage. The 1.1V supply suits thermally constrained embedded enclosures, and on-die ECC raises data reliability for cache operations. Verify the embedded memory controller's DDR5 training firmware supports 24Gb densities and non-power-of-two addressing before committing the design.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K4RHE086VB-BCWM — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K4RHE086VP | K4RAH086VB-BCWM | K4RAH086VP-BCWM |
|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gb | 24 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps |
| Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | DDR5 | DDR5 | DDR5 | DDR5 |
| Controller Address Mapping | Requires 24Gb support | Requires 24Gb support | Standard power-of-two 16Gb mapping | Standard power-of-two 16Gb mapping |
主な差別化要因
- Highest verified density in comparison set （vs K4RAH086VB-BCWM)
- Zero-parameter-change die-revision alternate （vs K4RHE086VP)
- DDR5 generation efficiency over DDR4 （vs K4AAG165WM-BCWE (DDR4))
設計ノート
24Gb DDR5 components require memory-controller support for non-power-of-two density address mapping. Many legacy DDR5 controllers and early BIOS/SPD tables validate only 8Gb/16Gb densities and will fail training or mis-map a 24Gb device. Before committing the K4RHE086VB-BCWM to a design, confirm the CPU memory controller and BIOS support 24Gb row/column addressing, and validate SPD data on the target module. This is the single most common integration failure when moving from 16Gb to 24Gb DDR5.
At 5600 Mbps, DDR5 signal integrity is dominated by DQ/DQS trace-length matching, reference-voltage integrity, and on-die termination settings. Follow the platform vendor's DDR5 routing guideline: keep DQ skews within the spec window, use the controller's write leveling and read training, and set termination (ODT) values per the DDR5 configuration table for this speed grade. DLL-enabled mode governs all timing specifications per Samsung's DDR5 specification, so ensure the design operates in DLL-enabled mode for full 5600 Mbps performance.
The K4RHE086VB-BCWM operates from a 1.1V core with DDR5's separate VDDQ I/O rail (1.1V per the DDR5 standard). Design the power tree with dedicated VDD and VDDQ planes, low-ESR bulk capacitance near each device group, and high-frequency decoupling at every supply ball group. Compared with DDR4's 1.2V, the reduced core voltage plus DDR5 power-management architecture delivers Samsung's cited ~30% power-efficiency gain over DDR4 - but only if VRM ripple stays within the DDR5 tolerance window. Validate power rails under worst-case refresh patterns at max temperature.
コンプライアンス情報
Compliance status not stated in provided web data. Samsung DDR5 products are typically RoHS compliant, but this must be confirmed against official Samsung documentation before claims are made.
