K4RHE086VB-BCWM - DDR5 24Gb 5600Mbps SDRAM | Samsung
Teilenummer: K4RHE086VB-BCWM ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $17.2 | $172,00 |
| 100 | $15.8 | $1.580,00 |
| 500 | $14.6 | $7.300,00 |
| 1.000 | $13.4 | $13.400,00 |
K4RHE086VB-BCWM Übersicht
DRAM (Dynamic Random Access Memory) is a semiconductor memory that stores each bit in a separate capacitor within an integrated circuit. Within the memory hierarchy, DRAM sits as main system memory between CPU caches and storage. DDR5 SDRAM is the fifth generation of double-data-rate synchronous DRAM, successor to DDR4, offering higher densities per die, on-die ECC, and improved power efficiency relative to DDR4.
Key features of the K4RHE086VB-BCWM include 24Gb density in a single die, 5600 Mbps/pin data rate, a 1.1V core voltage, and the DDR5 feature set including on-die ECC and improved bank architecture for higher effective bandwidth. The x8 organization suits ECC-protected server channels where 72-bit buses are built from 9 x8 components.
The device implements the DDR5 architecture with bank group parallelism and burst length 16, delivering high sustained bandwidth at moderate frequencies. DLL-enabled mode operation governs timing specifications per Samsung's DDR5 specification documents; timing parameters for this speed grade follow Samsung's DDR5 device specification family for 5600 Mbps operation.
Typical applications include data center server RDIMM and module assemblies, high-performance workstation memory, premium PC DIMMs, and industrial systems requiring long-term DDR5 supply continuity. The x8 organization is particularly suited to ECC server implementations.
When designing in this device, verify controller compatibility with 24Gb address mapping, since 24Gb DDR5 requires specific row/column addressing support; not all memory controllers accept non-power-of-two densities.
This page synthesizes distributor inventory data, drop-in alternatives within the Samsung DDR5 family, and practical design notes not found in the manufacturer datasheet. Pricing is quotation-based as of 2026-09-04.
Drop-in-Alternativen für K4RHE086VB-BCWM – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4RHE086VB-BCWM (gleiche Bauform und Footprint) – abweichend in Interface, Package, Data Rate, Organization, Density.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4RHE086VP
✅ Drop-In✓ Auf Lager
$9.9 / Stück
Datenblatt ansehen →K4RAH086VB-BCWM
✅ Drop-In✓ Auf Lager
$44.5455 / Stück
Datenblatt ansehen →K4RAH086VP-BCWM
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K4RAH086VE-BCWM
✅ Drop-In✓ Auf Lager
$7.6 / Stück
Datenblatt ansehen →K4RHE086VB-BCWM Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR5 SDRAM |
| Density | 24 Gb |
| Speicherorganisation | 2G x 8 |
| Datenrate | 5600 Mbps/pin |
| Core Voltage | 1.1 V |
| Schnittstelle | DDR5 (double data rate, 5th generation) |
| Burst Length | 16 (BL16, DDR5 standard) |
| On-Die ECC | Yes (DDR5 standard feature) |
| Gehäuse | FBGA (surface mount) |
| Montageart | Surface Mount |
| Application Segment | Data center, industrial, premium PC |
K4RHE086VB-BCWM fbga (surface mount) Pinbelegungsleitfaden
Pinbelegung für K4RHE086VB-BCWM (fbga (surface mount)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K4RHE086VB-BCWM.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K4RHE086VB-BCWM ist geeignet für 6 Anwendungs: Data Center Server Memory, Premium PC and Workstation DIMMs, Industrial Systems with Long-Term Availability, AI and Accelerator Compute Memory, Networking and Communication Equipment, Embedded and Storage Controllers.
Data Center Server Memory
The K4RHE086VB-BCWM is purpose-built for data center DDR5 memory subsystems. Its 24Gb density in a 2G x 8 organization lets module designers build high-capacity RDIMMs with fewer components per 72-bit ECC channel - nine x8 devices deliver 27GB per rank. Running at 5600 Mbps and 1.1V, it provides the bandwidth modern server CPUs require while improving power efficiency versus DDR4, a critical factor at rack scale. Distributors (SMC, serverramstore) explicitly position this part for server deployments requiring long-term supply continuity. Designers should verify platform support for 24Gb address mapping and complete DDR5 training validation at 5600 Mbps on the target CPU/memory-controller combination before volume production.
Empfohlen
Premium PC and Workstation DIMMs
For premium PC and professional workstation platforms, the K4RHE086VB-BCWM enables enthusiast-class UDIMM and CUDIMM designs at 5600 Mbps. Kingrole markets this device as transforming data centers, premium PCs, and professional workstations, reflecting its dual role in client computing. The 24Gb density allows 48GB-class module capacities that DDR4 could not achieve with comparable component counts, and DDR5's on-die ECC improves data integrity for workstation workloads such as content creation and CAD. The 1.1V operation reduces module power versus DDR4-5600-equivalent designs. Client platforms must expose 24Gb row/column addressing in BIOS/SPD tables; validate memory training on the specific CPU- chipset combination during module qualification.
Empfohlen
Industrial Systems with Long-Term Availability
Industrial computing platforms - factory controllers, edge servers, and test equipment - need memory components with predictable long-term supply. SMC notes the K4RHE086VB-BCWM is widely deployed in DDR5 memory solutions for industrial systems where long-term availability is required, making it a strong choice for extended-lifecycle designs. Its 24Gb density supports 16GB+ memory footprints per x8 device, and DDR5's on-die ECC improves reliability in electrically noisy factory environments. At 5600 Mbps, it delivers headroom for data-intensive industrial workloads such as machine-vision buffering. Designers should qualify Samsung's industrial supply program terms and lock date-code requirements in procurement agreements to guarantee consistency across the product's service life.
Empfohlen
AI and Accelerator Compute Memory
AI training and inference servers demand maximum memory bandwidth and capacity per socket. The K4RHE086VB-BCWM's 5600 Mbps data rate and 24Gb density let accelerator-adjacent host memory subsystems reach high aggregate bandwidth - eight channels of x72 ECC buses built from this device deliver multi-hundred-GB/s performance per socket. Fewer, denser components per module also reduce the load on DDR5 command/address buses, improving signal integrity at high data rates. DDR5's on-die ECC plus module-level CRC safeguards large in-memory datasets used in AI workloads. For AI platforms, pair this DRAM with Samsung's qualifying module families and verify CUDIMM/RDIMM interoperability on the target CPU platform before ramping production volume.
Empfohlen
Networking and Communication Equipment
High-throughput networking platforms - routers, switches, and 5G infrastructure - use DDR5 main memory for packet buffering, flow tables, and control-plane software. The K4RHE086VB-BCWM fits these designs with 24Gb density and 5600 Mbps bandwidth, supporting deep packet buffers and large routing tables at 1.1V operating power. DDR5's improved bank architecture sustains the random-access patterns typical of network workloads better than DDR4. Its x8 organization supports ECC-protected subsystems essential for carrier-grade reliability. Thermal design matters in convection-cooled network chassis: at 24Gb density, ensure junction temperatures stay within the DDR5 specification by modeling airflow over the FBGA packages and derailing refresh-related power at elevated ambient temperatures.
Empfohlen
Embedded and Storage Controllers
Enterprise SSD controllers, smart NICs, and embedded x86/ARM platforms use DDR5 DRAM as firmware execution memory and write-cache buffers. The K4RHE086VB-BCWM's 24Gb density provides 3GB per x8 device, ample for sophisticated controller firmware with hardware-backed caching, while its 5600 Mbps rate minimizes latency for buffer exchanges. Samsung's own SSD controller ecosystem (e.g., K9-series NAND partners) commonly pairs DDR5 DRAM with high-capacity NAND for enterprise storage. The 1.1V supply suits thermally constrained embedded enclosures, and on-die ECC raises data reliability for cache operations. Verify the embedded memory controller's DDR5 training firmware supports 24Gb densities and non-power-of-two addressing before committing the design.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4RHE086VB-BCWM – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4RHE086VP | K4RAH086VB-BCWM | K4RAH086VP-BCWM |
|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 24 Gb | 24 Gb | 16 Gb | 16 Gb |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 5600 Mbps | 5600 Mbps | 5600 Mbps |
| Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Memory Generation | DDR5 | DDR5 | DDR5 | DDR5 |
| Controller Address Mapping | Requires 24Gb support | Requires 24Gb support | Standard power-of-two 16Gb mapping | Standard power-of-two 16Gb mapping |
Wichtigste Unterscheidungsmerkmale
- Highest verified density in comparison set (vs. K4RAH086VB-BCWM)
- Zero-parameter-change die-revision alternate (vs. K4RHE086VP)
- DDR5 generation efficiency over DDR4 (vs. K4AAG165WM-BCWE (DDR4))
Designhinweise
24Gb DDR5 components require memory-controller support for non-power-of-two density address mapping. Many legacy DDR5 controllers and early BIOS/SPD tables validate only 8Gb/16Gb densities and will fail training or mis-map a 24Gb device. Before committing the K4RHE086VB-BCWM to a design, confirm the CPU memory controller and BIOS support 24Gb row/column addressing, and validate SPD data on the target module. This is the single most common integration failure when moving from 16Gb to 24Gb DDR5.
At 5600 Mbps, DDR5 signal integrity is dominated by DQ/DQS trace-length matching, reference-voltage integrity, and on-die termination settings. Follow the platform vendor's DDR5 routing guideline: keep DQ skews within the spec window, use the controller's write leveling and read training, and set termination (ODT) values per the DDR5 configuration table for this speed grade. DLL-enabled mode governs all timing specifications per Samsung's DDR5 specification, so ensure the design operates in DLL-enabled mode for full 5600 Mbps performance.
The K4RHE086VB-BCWM operates from a 1.1V core with DDR5's separate VDDQ I/O rail (1.1V per the DDR5 standard). Design the power tree with dedicated VDD and VDDQ planes, low-ESR bulk capacitance near each device group, and high-frequency decoupling at every supply ball group. Compared with DDR4's 1.2V, the reduced core voltage plus DDR5 power-management architecture delivers Samsung's cited ~30% power-efficiency gain over DDR4 - but only if VRM ripple stays within the DDR5 tolerance window. Validate power rails under worst-case refresh patterns at max temperature.
Compliance-Informationen
Compliance status not stated in provided web data. Samsung DDR5 products are typically RoHS compliant, but this must be confirmed against official Samsung documentation before claims are made.
