K4B4G1646I-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
部品番号: K4B4G1646I-BYK0 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.52 | $2.52 |
| 10 | $2.35 | $23.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.9 | $950.00 |
| 1,000 | $1.75 | $1,750.00 |
K4B4G1646I-BYK0 概要
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and embedded systems where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core voltage, and support for data rates up to 1866 Mbps. The device features on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also includes auto-refresh and self-refresh modes for power saving, making it suitable for battery-powered devices.
The K4B4G1646I-BYK0 uses a high-performance CMOS process and a bank architecture of 8 banks, enabling high-speed random access. The FBGA-96 package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. The device supports a temperature range of 0°C to 95°C (case temperature), ensuring reliable operation in various environments.
Typical applications include mobile devices, embedded computing, networking equipment, and industrial automation. Its low voltage and high density make it ideal for memory-intensive applications where space and power are constrained.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for the I/O.
ドロップイン代替品: K4B4G1646I-BYK0 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K4B4G1646I-BYK0 （同一形状・フットプリント） — 相違点: Package, Supply Voltage, Burst Length, CAS Latency, Data Rate.
クイック比較ツール — 並列比較する代替部品を選択:
K4B4G1646E-BYK0
✅ ドロップイン✓ 在庫あり
$1.8 / 個
データシートを見る →K4B4G1646D-BYK0
✅ ドロップイン✓ 在庫あり
$2.9 / 個
データシートを見る →K4B4G1646E-BYK000
✅ ドロップイン✓ 在庫あり
$0.5619 / 個
データシートを見る →MT41K256M16HA-125
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$6.3636 / 個
データシートを見る →H5TQ4G63AFR-PBA
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
K4B4G1646I-BYK0 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| メモリサイズ | 4 Gb |
| メモリ構成 | 256M x 16 |
| 電源電圧 | 1.35 V |
| データレート | 1866 Mbps |
| Clock Frequency | 933 MHz |
| パッケージ | FBGA-96 |
| 動作温度 | 0°C to 95°C (Tc) |
| インターフェース | Parallel |
| Number of Banks | 8 |
| Burst Length | 8, 4 |
| RoHS | Compliant |
| 実装タイプ | Surface Mount |
| Lead-Free | Yes |
K4B4G1646I-BYK0 ピン構成
| ピン A1 | VDD — Power supply (1.35V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン B1 | VSS — Ground |
| ピン B2 | DQ2 — Data input/output 2 |
| ピン B3 | DQ3 — Data input/output 3 |
| ピン C1 | VDDQ — I/O power supply |
| ピン C2 | DQ4 — Data input/output 4 |
| ピン C3 | DQ5 — Data input/output 5 |
| ピン D1 | VSSQ — I/O ground |
| ピン D2 | DQ6 — Data input/output 6 |
| ピン D3 | DQ7 — Data input/output 7 |
| ピン E1 | DQS0 — Data strobe 0 |
| ピン E2 | DQS#0 — Data strobe complement 0 |
| ピン E3 | VSS — Ground |
主な用途
K4B4G1646I-BYK0 の用途: 6 件s: Mobile Devices, Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Data Storage Systems.
Mobile Devices
The K4B4G1646I-BYK0's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets. Its FBGA-96 package saves board space, and the 1866 Mbps data rate supports high-bandwidth applications like HD video and gaming. Power efficiency extends battery life, while the 0°C to 95°C range covers typical consumer use.
おすすめ
Embedded Computing
In embedded systems, the K4B4G1646I-BYK0 provides high-density volatile storage for data logging, real-time processing, and OS operation. Its 1.35V supply reduces thermal load, and the 96-ball FBGA allows compact PCB layouts. The 1866 Mbps speed ensures fast data access for industrial controllers and IoT gateways.
おすすめ
Networking Equipment
Routers, switches, and network appliances require fast, reliable memory for packet buffering and routing tables. The K4B4G1646I-BYK0's 1866 Mbps data rate and 4Gb capacity handle high-throughput traffic. Its low voltage reduces power consumption in always-on equipment, and the FBGA package withstands continuous operation.
おすすめ
Industrial Automation
Industrial controllers and PLCs use the K4B4G1646I-BYK0 for program storage and data buffering. Its 0°C to 95°C temperature range suits factory environments, and the 1.35V operation minimizes heat generation. The 256Mx16 organization simplifies interfacing with 16-bit microcontrollers, and the FBGA package offers robust solder joints.
おすすめ
Consumer Electronics
Smart TVs, set-top boxes, and gaming consoles use DDR3L for system memory. The K4B4G1646I-BYK0's 4Gb capacity supports multitasking and multimedia, while 1.35V reduces power consumption. Its high data rate enables smooth video playback and responsive user interfaces.
おすすめ
Data Storage Systems
In SSDs and network-attached storage, the K4B4G1646I-BYK0 serves as cache memory. Its low latency and high bandwidth improve read/write performance. The 1.35V supply reduces power in data centers, and the FBGA package supports high-density board designs.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K4B4G1646I-BYK0 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K4B4G1646E-BYK0 | K4B4G1646D-BYK0 | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Low voltage operation （vs MT41K256M16HA-125)
- High density in small package （vs K4B2G1646F-BYK0)
- Newer die revision （vs K4B4G1646E-BYK0)
設計ノート
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Use a solid ground plane and minimize trace lengths for DQ and DQS signals to reduce noise and signal integrity issues.
The FBGA-96 package has a thermal resistance of approximately 20°C/W. At 1.35V and typical currents, power dissipation is low, but ensure adequate airflow or a thermal pad for high-temperature environments. Monitor case temperature to stay within 95°C.
Route address and control signals with matched lengths to ensure timing. Use series termination resistors (22-33 ohm) for DQ and DQS lines. Follow the layout guidelines in the Samsung datasheet for optimal performance.
コンプライアンス情報
RoHS compliant per distributor listings. AEC-Q100 not applicable for memory ICs.
