K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung
部品番号: K4B4G1646E-BYMA ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $24.5455 | $24.55 |
| 10 | $17.7273 | $177.27 |
| 100 | $15.6818 | $1,568.18 |
| 500 | $15 | $7,500.00 |
| 1,000 | $14.3182 | $14,318.20 |
K4B4G1646E-BYMA 概要
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining compatibility with DDR3L and DDR3 systems. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in laptops, servers, embedded systems, and networking equipment.
Key features include a 4Gb density organized as 256M x 16, a 1.35V power supply (with 1.28V to 1.575V range), a 933 MHz clock frequency, and a typical operating current of 14mA. The device supports auto precharge, asynchronous reset, and dynamic on-chip termination, enhancing performance and ease of use. The FBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646E-BYMA uses Samsung's advanced E-die process technology, providing high-speed operation with low power. It features programmable CAS latency, burst length, and output drive strength, allowing system designers to optimize performance. The device includes a temperature sensor for thermal management and supports on-die termination (ODT) for improved signal quality.
Typical applications include DDR3L memory modules for laptops and ultrabooks, networking equipment such as routers and switches, industrial computing systems, and embedded applications requiring high-density, low-power memory. Its 1.35V operation makes it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and a reference voltage (VREF) for optimal operation.
ドロップイン代替品: K4B4G1646E-BYMA — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K4B4G1646E-BYMA （同一形状・フットプリント） — 相違点: Package, Supply Voltage, Data Rate, Burst Length, CAS Latency.
クイック比較ツール — 並列比較する代替部品を選択:
K4B4G1646E-BCNB
✓ 在庫あり
$13.5227 / 個
データシートを見る →K4B4G1646E-BYK000
✓ 在庫あり
$0.5619 / 個
データシートを見る →K4B4G1646E-BCMA
✓ 在庫あり
$3.7734 / 個
データシートを見る →MT41K512M16HA-125
📋 参考代替品（カタログ未掲載）
H5TQ4G63CFR-PBC
📋 参考代替品（カタログ未掲載）
AS4C256M16D3LC-10BCN
📋 参考代替品（カタログ未掲載）
K4B4G1646E-BYMA 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| Density | 4 Gb |
| メモリ構成 | 256M x 16 |
| 電源電圧 | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | 933 MHz |
| データレート | 1866 Mbps/pin |
| 動作温度 | 0°C to +95°C |
| Operating Current | 14 mA |
| Standby Current | 2 mA, 3 mA |
| パッケージ | FBGA-96 |
| 実装タイプ | Surface Mount |
| RoHS | Compliant |
| ピン数 | 96 |
K4B4G1646E-BYMA ピン構成
| ピン A1 | VDD — Power supply (1.35V) |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン B1 | VDDQ — DQ power supply |
| ピン B2 | DQ2 — Data input/output 2 |
| ピン B3 | DQ3 — Data input/output 3 |
| ピン B4 | VSSQ — DQ ground |
| ピン C1 | VREFCA — Reference voltage for command/address |
| ピン C2 | A0 — Address input 0 |
| ピン C3 | A1 — Address input 1 |
| ピン C4 | A2 — Address input 2 |
主な用途
K4B4G1646E-BYMA の用途: 6 件s: Laptop Memory Modules, Networking Equipment, Industrial Computing, Embedded Systems, Data Center Servers, Consumer Electronics.
Laptop Memory Modules
The K4B4G1646E-BYMA's 1.35V operation and 4Gb density make it ideal for DDR3L SO-DIMMs in laptops and ultrabooks. Its low power consumption extends battery life, while the 1866 Mbps data rate supports demanding multitasking. The FBGA-96 package allows compact module designs. When used in SO-DIMMs, it pairs with a DDR3L controller and requires careful routing to maintain signal integrity at high speeds.
おすすめ
Networking Equipment
In routers and switches, the K4B4G1646E-BYMA provides high-bandwidth packet buffering with low latency. Its 1866 Mbps data rate handles high-throughput traffic, while the 1.35V supply reduces power in always-on equipment. The device's on-die termination and ZQ calibration ensure signal quality on dense PCBs. It is often paired with a network processor and requires proper decoupling for stable operation.
おすすめ
Industrial Computing
The K4B4G1646E-BYMA operates over 0°C to +95°C, suitable for industrial PCs and embedded systems. Its 4Gb density supports applications like machine vision and process control. The 1.35V operation reduces heat generation, important in sealed enclosures. The FBGA-96 package withstands vibration, and the device's auto precharge simplifies memory management. It works with industrial-grade controllers and benefits from conformal coating in harsh environments.
おすすめ
Embedded Systems
For embedded applications like medical devices and point-of-sale terminals, the K4B4G1646E-BYMA offers a balance of density, speed, and power. Its 4Gb capacity supports complex software, while 1.35V operation is compatible with battery-powered designs. The device's small FBGA-96 footprint saves board space. It is typically used with an application processor and requires careful power sequencing.
おすすめ
Data Center Servers
In servers, the K4B4G1646E-BYMA can be used in DDR3L RDIMMs or UDIMMs for cost-effective memory expansion. Its 1866 Mbps speed supports high-bandwidth workloads, and the 1.35V supply reduces power in large memory arrays. The device's E-die technology ensures reliability under continuous operation. It is often paired with server chipsets and requires thermal management in high-density configurations.
おすすめ
Consumer Electronics
The K4B4G1646E-BYMA is used in smart TVs, set-top boxes, and gaming consoles for main memory. Its 4Gb density supports HD video streaming and gaming, while 1.35V operation keeps power low. The FBGA-96 package enables slim device designs. It works with SoCs and requires proper ESD protection in consumer environments.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K4B4G1646E-BYMA — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K4B4G1646E-BYK000 | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | FBGA-96 | FBGA-96 | FBGA-96 | FBGA-96 |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Samsung E-die process technology （vs MT41K512M16HA-125)
- 1.35V low-power operation （vs H5TQ4G63CFR-PBC)
- Long-term availability from Samsung （vs AS4C256M16D3LC-10BCN)
設計ノート
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/command signals. Keep trace lengths matched within 100 mils for DQ/DQS groups. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. Follow the layout guidelines in the Samsung datasheet to minimize crosstalk and signal reflection.
The K4B4G1646E-BYMA requires a stable 1.35V supply with low ripple. Use a dedicated DDR3L power regulator with adequate current capability (at least 1A for a single device). Ensure the VREFCA and VREFDQ voltages are generated from a precision divider and filtered with a 0.1uF capacitor. Power sequencing should follow JEDEC standards: apply VDD before VDDQ, and VDDQ before VREF.
The device operates up to +95°C, but for reliable long-term operation, keep the junction temperature below 85°C. In high-density applications, ensure adequate airflow or use a heatsink. The FBGA-96 package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB thermal vias. Calculate power dissipation as VDD * IDD (typical 14mA) plus switching losses.
コンプライアンス情報
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
