K4B4G1646F-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
部品番号: K4B4G1646F-BYK0 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $2.52 | $2.52 |
| 10 | $2.35 | $23.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.95 | $975.00 |
| 1,000 | $1.8 | $1,800.00 |
K4B4G1646F-BYK0 概要
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the memory hierarchy in computing systems, serving as the main system memory for processors, and is widely used in laptops, servers, and embedded systems.
Key features include a 4Gb density, 16-bit I/O width, 96-ball FBGA package, and support for 1.35V and 1.5V operation. The device offers a burst length of 8 and 4, programmable CAS latency, and on-die termination. It also includes auto precharge, self-refresh, and power-down modes for energy efficiency.
The K4B4G1646F-BYK0 uses a high-performance CMOS process and features a pseudo-open-drain interface. It supports a wide operating temperature range of 0°C to 95°C (TC) and is RoHS compliant. The device is designed for reliable operation in demanding environments, with a typical refresh period of 7.8 us at 85°C.
Typical applications include DDR3L memory modules for laptops, all-in-one PCs, and embedded systems, as well as networking equipment, industrial computers, and automotive infotainment systems. Its low voltage and high density make it ideal for power-sensitive designs.
When designing with this device, ensure proper decoupling and signal integrity practices, including matched trace lengths and termination resistors, to achieve reliable high-speed operation.
ドロップイン代替品: K4B4G1646F-BYK0 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K4B4G1646F-BYK0 （同一形状・フットプリント） — 相違点: Data Rate, Operating Temperature, Package, Burst Length, Supply Voltage.
クイック比較ツール — 並列比較する代替部品を選択:
K4B4G1646E-BYK0
✅ ドロップイン✓ 在庫あり
$1.8 / 個
データシートを見る →K4B4G1646D-BYK0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$2.9 / 個
データシートを見る →K4B4G1646E-BCMA
✅ ドロップイン✓ 在庫あり
$3.7734 / 個
データシートを見る →MT41K256M16HA-125:A1
✅ ドロップイン ⚠️ 仕様未検証📋 参考代替品（カタログ未掲載）
H5TC4G63AFR-PBA
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$3.9773 / 個
データシートを見る →K4B4G1646F-BYK0 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| メモリサイズ | 4 Gb |
| Memory Organization | 256M x 16 |
| 電源電圧 | 1.35V / 1.5V |
| データレート | 1866 Mbps |
| Clock Frequency | 933 MHz |
| パッケージ | 96-ball FBGA |
| 動作温度 | 0°C to 95°C (TC) |
| インターフェース | Parallel |
| Burst Length | 8 and 4 |
| CASレイテンシ | Programmable |
| On-Die Termination | Yes |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| RoHS | Compliant |
K4B4G1646F-BYK0 ピン構成
| ピン A1 | VDD — Power supply |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン A5 | DQ2 — Data input/output 2 |
| ピン A6 | DQ3 — Data input/output 3 |
| ピン A7 | VDD — Power supply |
| ピン A8 | DQ4 — Data input/output 4 |
| ピン A9 | DQ5 — Data input/output 5 |
| ピン A10 | VSS — Ground |
| ピン A11 | DQ6 — Data input/output 6 |
| ピン A12 | DQ7 — Data input/output 7 |
主な用途
K4B4G1646F-BYK0 の用途: 6 件s: Laptop Memory, Embedded Systems, Networking Equipment, Automotive Infotainment, Industrial PCs, Servers.
Laptop Memory
The K4B4G1646F-BYK0 is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, reducing power consumption and extending battery life. Its 4Gb density allows 8GB modules with 16 chips, and the 1866 Mbps data rate supports modern processors. The FBGA package enables compact module designs, and the wide temperature range ensures reliability in portable devices.
おすすめ
Embedded Systems
In embedded systems, the K4B4G1646F-BYK0 provides high-density memory for applications like industrial controllers and networking equipment. Its 1.35V operation reduces heat generation, and the 96-ball FBGA package is suitable for space-constrained PCBs. The device supports standard DDR3L features like ZQ calibration and on-die termination, simplifying design. Its 0-95°C range covers most industrial environments.
おすすめ
Networking Equipment
The K4B4G1646F-BYK0 is used in routers, switches, and firewalls for packet buffering and routing tables. Its high bandwidth (1866 Mbps) and low latency support high-throughput data processing. The 1.35V supply reduces power in always-on equipment, and the FBGA package offers good thermal performance. The device's reliability and long lifecycle make it suitable for infrastructure deployments.
おすすめ
Automotive Infotainment
In automotive infotainment systems, the K4B4G1646F-BYK0 provides memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 0-95°C range covers cabin temperature extremes. The FBGA package withstands vibration, and the high data rate supports smooth graphics. Samsung's automotive-grade variants are available for stricter requirements.
おすすめ
Industrial PCs
The K4B4G1646F-BYK0 is used in industrial PCs for factory automation and process control. Its 4Gb density allows large memory footprints for data logging and HMI applications. The 1.35V supply reduces heat in sealed enclosures, and the wide temperature range ensures operation in harsh environments. The device's long availability supports extended product lifecycles common in industrial equipment.
おすすめ
Servers
In entry-level servers, the K4B4G1646F-BYK0 is used in UDIMM modules for cost-effective memory expansion. Its 1866 Mbps data rate supports dual-channel configurations, and the 1.35V operation reduces data center power consumption. The FBGA package allows high-density modules, and the device's reliability is critical for 24/7 operation. ECC variants are available for error correction.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K4B4G1646F-BYK0 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K4B4G1646E-BYK0 | K4B4G1646D-BYK0 | MT41K256M16HA-125:A1 | H5TC4G63AFR-PBA |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Operating Temperature | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C | 0°C to 95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
主な差別化要因
- Low voltage operation (1.35V) （vs Standard DDR3 parts at 1.5V)
- High density 4Gb in 16-bit organization （vs 2Gb parts like K4B2G1646F-BYK0)
- Samsung F-die revision （vs E-die (K4B4G1646E-BYK0))
設計ノート
For high-speed DDR3L routing, maintain 50-ohm single-ended impedance and 100-ohm differential impedance for DQS signals. Keep trace lengths matched within 50 mils for address/command and 25 mils for data groups. Use ground planes beneath the FBGA to minimize noise.
Decouple VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the balls. Use a dedicated power plane for VDDQ to reduce noise. The 1.35V supply should be stable within +/-5% to ensure reliable operation.
The FBGA package dissipates heat through the solder balls and PCB. Ensure adequate thermal vias under the package to conduct heat to inner layers. For high ambient temperatures, consider airflow or heatsinks to keep TC below 95°C.
コンプライアンス情報
RoHS compliance confirmed from datasheet. Other compliance data not available.
