K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
部品番号: K9CHGY8S5C-CCK0 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1 | $1.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9CHGY8S5C-CCK0 概要
NAND flash is a non-volatile memory technology that stores data in floating-gate or charge-trap cells arranged in series, enabling very high bit density at low cost per gigabyte. Within the memory hierarchy, NAND flash sits below DRAM in speed but above magnetic storage in access time, and it forms the storage foundation of SSDs, eMMC/UFS modules, embedded storage, and removable media. Samsung is the world's leading NAND producer, and its V-NAND (3D charge-trap) process stacks cells vertically to increase density without shrinking cell geometry.
The K9 family naming convention indicates a high-capacity data-center/embedded-class NAND device. The CCK0 suffix identifies the speed grade and package/process option; the S5C position encodes density and organization, and the x8 I/O organization with multiple chip enables allows a memory controller to interleave several logical dies for parallelism and higher effective bandwidth, which is essential in SSD controller designs.
Key engineering characteristics include multi-die (quad-die) stacking accessed through the 16 CE_n assignments, an asynchronous/ONFI-class toggle or DDR interface for data transfer, and separate core (VCC) and I/O (VCCQ) power domains to reduce I/O power. The 12V rail present in the pin map corresponds to the internal charge-pump/programming supply domain used for page program and erase operations.
Typical applications include client and enterprise SSDs, embedded storage modules, set-top boxes, and industrial storage where high-density raw NAND is managed by a companion controller. The device is designed for surface-mount reflow assembly on standard SMT lines.
When designing with raw NAND, always implement the ECC scheme (BCH or LDPC) required by the cell type and plan for bad-block management and wear leveling in the controller firmware. Decouple VCC, VCCQ, and the program supply rails independently with low-ESR ceramics placed close to the ball fanout.
This page synthesizes distributor availability data, independent pinout documentation, and practical design notes not found on typical product pages.
ドロップイン代替品: K9CHGY8S5C-CCK0 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K9CHGY8S5C-CCK0 （同一形状・フットプリント） — 相違点: Mounting Type, Package, Product Type, Memory Type, Product Family.
クイック比較ツール — 並列比較する代替部品を選択:
K9CHGY8S5M-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9CHGY8S5E-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9CHGY8S5M-CCK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K9PRGY8S7M-CCK0
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9PKGY8S7M-CCK0
✅ ドロップイン✓ 在庫あり
$9.4 / 個
データシートを見る →K9HQGY8S5M
✅ ドロップイン✓ 在庫あり
価格はお問い合わせください
データシートを見る →K9CHGY8S5C-CCK0 最大定格＆電気的特性
| Manufacturer | Samsung Electronics |
| Product Type | NAND Flash Memory |
| パッケージ | BGA-316 |
| メモリ構成 | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | 16 (CE_n) |
| Pin Reduction | Not used |
| Supply Rail VCC | 1.83 V |
| Supply Rail (secondary) | 1.84 V |
| Supply Rail VCCQ-class | 2.96 V |
| Program/Erase Supply Rail | 12 V domain |
| 実装タイプ | Surface Mount (BGA reflow) |
K9CHGY8S5C-CCK0 bga-316 ピン配置ガイド
K9CHGY8S5C-CCK0 (bga-316 パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K9CHGY8S5C-CCK0.
詳細は データシート をご参照ください。
主な用途
K9CHGY8S5C-CCK0 の用途: 6 件s: Client and Enterprise SSD Raw NAND, Embedded Storage Modules (eMMC/UFS-class designs), Set-Top Box and Smart Home Media Storage, Industrial Data Loggers and Edge Recorders, Network Attached Storage and Router Cache, Automotive Infotainment and Black-Box Storage.
Client and Enterprise SSD Raw NAND
SSD controllers aggregate multiple raw NAND packages and interleave them through the chip-enable signals to raise effective bandwidth. The K9CHGY8S5C-CCK0 offers 16 CE_n assignments on a BGA-316 footprint for quad 8-bit data access, allowing a controller to spread page program, erase, and read operations across many logical dies and hide program/erase latency behind concurrent reads. With VCC at 1.83V and a VCCQ-class I/O rail at 2.96V, I/O power stays separate from core power, simplifying rail budgeting in dense SSD PCBs. The 12V program domain is typically generated locally by the controller board's boost converter. Channel width, ECC (LDPC) configuration, and interleaving depth should be planned around the verified 16 CE structure.
おすすめ
Embedded Storage Modules (eMMC/UFS-class designs)
Embedded storage modules combine a controller with raw NAND dies; the K9CHGY8S5C-CCK0 can serve as the media on module-level designs where the module vendor manages FTL firmware. Its BGA-316 footprint with a documented 16 CE_n ball map allows high die count per package, increasing module density without additional PCB area - a direct cost and size advantage. The 1.83V core and 2.96V I/O rails match standard embedded-controller power trees, so no level shifting is required. Because pin reduction is not used, all ball functions remain accessible, which simplifies re-use of a common module land pattern across Samsung family variants (K9CHGY8S5M-CCK0, K9CHGY8S5E-CCK0) for supply resilience.
おすすめ
Set-Top Box and Smart Home Media Storage
Set-top boxes and smart-home hubs store large firmware images, DVR buffers, and application payloads on NAND managed by an SoC's integrated controller. The K9CHGY8S5C-CCK0's x8 organization keeps the data bus width compatible with mainstream SoC NAND interfaces, while the 16 CE_n structure lets low-cost SoCs address multiple logical dies without extra GPIO expansion. Its 2.96V I/O rail matches typical consumer SoC VCCQ levels, and the 1.83V core rail is commonly available from the platform PMIC. Thermal output is modest at consumer write workloads, but designers should still verify program/erase endurance against expected DVR write cycles and implement wear leveling in the platform firmware.
おすすめ
Industrial Data Loggers and Edge Recorders
Industrial data loggers require non-volatile media that survives power loss and wide temperature exposure. The K9CHGY8S5C-CCK0 provides high-density storage in a single BGA-316 package, reducing component count versus multiple smaller NAND packages and improving vibration robustness because the solder balls provide a low-profile, mechanically stable attachment. The documented power domains (1.83V VCC, 2.96V I/O) integrate cleanly with industrial PMIC architectures. Designers must implement bad-block management, LDPC/BCH ECC, and power-fail protection (hold-off capacitors on the 12V program rail so in-flight page programs complete) to guarantee data integrity across unpredictable brownout events typical of factory environments.
おすすめ
Network Attached Storage and Router Cache
NAS heads and high-throughput routers use NAND as a write cache and metadata tier between DRAM and HDDs. The K9CHGY8S5C-CCK0's quad-die, 16 CE_n architecture lets the SoC interleave dies for higher sustained write bandwidth, which directly improves SMB/NFS burst performance. The 2.96V I/O rail keeps signal integrity margins comfortable for moderate bus speeds on typical four-to-eight layer router PCBs, and the BGA-316 footprint fits standard NAND land patterns used across Samsung generations, enabling density upgrades by swapping package variants. Firmware should reserve spare area generously and tune erase-block alignment to the controller's RAID stripe to avoid write amplification penalties.
おすすめ
Automotive Infotainment and Black-Box Storage
Automotive infotainment units and event data recorders store maps, media, and telemetry logs on managed NAND. The K9CHGY8S5C-CCK0's single-package high density minimizes board area behind the head unit, and the separate 1.83V/2.96V rails allow the platform PMIC to gate I/O power independently during cranking transients while core data retention is preserved. Designers targeting automotive programs must confirm the specific variant's AEC qualification status with Samsung (raw NAND is often qualified at module level), specify temperature grades accordingly, and implement power-fail interrupt handling so a page program in flight on the 12V domain completes before battery disconnect during a collision-capture write.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K9CHGY8S5C-CCK0 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K9CHGY8S5M-CCK0 | K9CHGY8S5E-CCK0 | K9PRGY8S7M-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|---|---|---|
| Package | BGA-316 | BGA-316 - same | BGA-316 - same | BGA-316 - same | BGA-316 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Controller Re-qualification | Baseline | None required (same family) | None required (same family) | Required (newer generation) | Required (newer generation) |
主な差別化要因
- Documented 16 CE_n quad 8-bit ball map （vs K9PRGY8S7M-CCK0)
- Legacy-platform continuity within same family （vs K9CHGY8S5M-CCK0)
- Separate 1.83V core / 2.96V I/O / 12V program domains （vs K9HQGY8S5M)
設計ノート
The K9CHGY8S5C-CCK0 requires three independent supply domains: 1.83V VCC (core), 2.96V I/O (VCCQ-class), and a 12V domain associated with program/erase. Decouple each rail with low-ESR ceramic capacitors at the BGA fanout - typically bulk 10uF plus 0.1uF per domain. Sequence VCC before or together with VCCQ per Samsung power-up requirements. The 12V rail must be current-capable enough to sustain concurrent page programming across active dies; insufficient 12V headroom during multi-die programming is a common root cause of program failures in multi-CE NAND designs.
BGA-316 requires a controlled reflow profile and matching land pattern per Samsung's package outline drawing. Fan out the 16 CE_n lines with matched-length traces to the controller so interleaved dies see uniform timing; large skew between CE groups degrades effective bandwidth. Keep the x8 data bus under 100 mm where possible and reference it to a solid ground plane. Verify ball-level assignments against the published K9CHGY8S5C-CCK0 pinout document (16x16 grid, pin reduction not used) before releasing the land pattern.
Raw NAND must not be connected directly to a processor bus without ECC and bad-block management: implement the LDPC/BCH scheme appropriate to the cell type and maintain a bad-block table in non-volatile storage. Do not assume pin compatibility with other Samsung generations - while the K9CHGY8S5M-CCK0 and K9CHGY8S5E-CCK0 share this BGA-316 ball map, newer families require controller ID-table and timing re-qualification. Finally, RoHS and temperature-grade data were not found in retrieved sources; obtain compliance certificates from Samsung before regulated-market production.
コンプライアンス情報
Compliance data was not present in the retrieved web sources; obtain certificates from Samsung or your distributor.
