IGBT
제품 (65)
IKW40N120T2FKSA1 - 1200V 75A TRENCHSTOP IGBT4 | Infineon
The Infineon IKW40N120T2FKSA1 is a hard-switching 1200 V, 75 A TRENCHSTOP IGBT4 co-packaged with a soft-recovery anti-parallel emitter-controlled diode in a TO-247-3-1 through-hole package. It combines Infineon's Trench + Fieldstop cell architecture with an internal free-wheeling diode to deliver low VCE(sat) of 1.75 V and minimal switching losses in hard-switched bridge topologies. The device is rated for 480 W of maximum power dissipation and supports continuous collector current up to 75 A at TC = 25 C. What is an IGBT? An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high-input-impedance, voltage-driven gate of a MOSFET with the low-conduction-loss output stage of a bipolar transistor. IGBTs sit in the power-semiconductor hierarchy above power MOSFETs and below thyristors, occupying the mid-voltage (600 V to 1700 V), high-current (10 A to 3600 A) sweet spot used in switch-mode power conversion. Within that hierarchy, Trench + Fieldstop generation 4 ('IGBT4') parts target hard-switching applications such as totem-pole PFC, full-bridge converters, and three-phase inverters where switching frequency and dynamic loss dominate. Key features include VCE(sat) of 1.75 V at rated IC, short-circuit ruggedness of 10 microseconds at 25 C and 6 microseconds at 150 C, a wide gate-emitter operating range of plus/minus 20 V, and an integrated co-packed diode with soft reverse-recovery. The TO-247-3-1 package offers a low thermal resistance path and a screw-mountable mechanical interface for industrial heatsink assemblies. Typical applications are induction heating inverters, photovoltaic string and central inverters, uninterruptible power supplies (UPS), welding converters, and three-phase motor drives in the 10 kW to 50 kW range. The co-packed diode eliminates the need for an external anti-parallel rectifier in half-bridge configurations, simplifying PCB layout and reducing parasitic loop inductance. When designing with this part, keep the gate-drive loop short and place a gate-emitter pull-down resistor (typically 10 kohm) close to the package to prevent dv/dt-induced turn-on. For high-frequency switching above 20 kHz, verify switching loss budgets against the IKW40N120T2 family curves in the datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IKW75N60TFKSA1 - 600V 75A TRENCHSTOP IGBT3 | Infineon
The Infineon IKW75N60TFKSA1 is a 600 V, 75 A hard-switching TRENCHSTOP IGBT3 co-packed with a full-rated free-wheeling diode in the industry-standard PG-TO247-3-1 (TO-247-3-1) through-hole package. It combines trench-cell and field-stop technology to deliver significant improvements in both static and dynamic performance versus prior-generation NPT IGBTs, with a maximum collector-emitter voltage VCES of 600 V, a continuous collector current IC of 75 A at TC=100 °C, and a maximum power dissipation of 428 W. An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the low conduction loss of a bipolar junction transistor with the voltage-driven gate of a MOSFET. It belongs to the broader class of power discrete transistors, sitting hierarchically between simple MOSFETs (used at lower voltages) and higher-voltage thyristors (used in HVDC and traction). The IGBT dominates 400 V to 1200 V hard-switching applications such as motor drives, uninterruptible power supplies, solar inverters, and induction heating because it offers the best trade-off between conduction loss, switching speed, and ease of gate drive. Key features of the IKW75N60TFKSA1 include a low VCE(sat) for reduced conduction loss, fast switching with low Eon/Eoff, short-circuit ruggedness, and an integrated anti-parallel emitter-recovery diode. The TO-247 package provides a robust mechanical footprint with a metal tab for direct heatsink mounting. The integrated diode eliminates the need for an external freewheeling diode in most bridge topologies, simplifying layout and reducing BOM cost. Architecturally, the IKW75N60TFKSA1 uses Infineon's third-generation TRENCHSTOP cell design, where vertical trenches etched into the silicon surface confine the conducting channel and reduce on-state losses. The field-stop layer controls the electric field during turn-off, allowing a thinner drift region and lower saturation voltage than non-punch-through (NPT) designs of the same voltage class. The co-packaged EmCon (emitter-controlled) diode is rated for the full 75 A and is optimized to minimize reverse-recovery losses in hard-switched bridge legs. Typical applications include three-phase motor drives for industrial automation, solar string inverters, uninterruptible power supplies (UPS), induction cooking, welding inverters, and switched-mode power supplies with PFC boost stages. The wide SOA and short-circuit tolerance make it particularly well suited to industrial motor drives where repetitive hard-switching events and fault robustness are required. When designing with this part, ensure the gate driver can source and sink at least 1 A peak to charge the input capacitance quickly, and use a negative gate-emitter turn-off bias (typically -8 V to -15 V) to prevent dv/dt-induced false turn-on in bridge configurations. The 428 W power dissipation figure assumes TC=25 °C; in real systems at TC=100 °C the usable dissipation drops to roughly 215 W, so heatsink sizing is essential.
IRGP50B60PD1-EP - 600V 75A WARP2 IGBT with Ultrafast Diode | Infineon
The Infineon IRGP50B60PD1-EP is a 600V, 75A WARP2-series Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast soft-recovery diode, housed in a 3-pin TO-247AD through-hole package. It targets switched-mode power supply (SMPS) applications up to 150 kHz, combining low VCE(on) of 2.0V (typical) at IC = 33A with an equivalent on-resistance RCE(on) of 61 mOhm (typical). An IGBT is a minority-carrier power semiconductor that merges the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Hybrid IGBT+diode co-packs such as the IRGP50B60PD1-EP occupy the power-management tier between discrete MOSFETs and high-voltage thyristors, sitting at the core of AC-DC and DC-DC conversion stages in telecom rectifiers, server front-ends, PFC boost stages, and ZVS/LLC resonant converters. NPT (Non-Punch-Through) wafer technology provides a robust trade-off between switching loss and short-circuit ruggedness. Key features include NPT technology, a VCE(on) of 2.0V (typical at 33A), co-packaged ultrafast soft-recovery diode for low EMI, low RCE(on) of 61 mOhm (typical), 150 kHz switching capability per the WARP2 designation, 390W power dissipation at TC = 25C, and a maximum junction temperature of 150C. The TO-247AD package supports isolated or non-isolated mounting and is compatible with standard heatsink clips. Architecture is an NPT (Non-Punch-Through) IGBT die monolithically integrated with a copackaged ultrafast soft-recovery rectifier that conducts during inductive freewheeling intervals, suppressing reverse-recovery spike voltages that otherwise couple across the switching node. Compared with trench-gate PT designs, NPT offers a wider safe-operating area and better thermal cycling endurance. Typical applications include telecom and server SMPS front-end PFC stages, ZVS/LLC resonant converter half-bridges, industrial uninterruptible power supplies (UPS), and high-power consumer SMPS. Designers choose this part where 600V breakdown margin and 33-75A continuous current are needed in a single TO-247 footprint. Design trade-off: the 2.0V typical VCE(on) at 33A results in approximately 66W of conduction loss at full load, so a properly-sized heatsink with thermal interface material is required to keep the junction below 150C and within the RthJC rating. This page synthesizes distributor pricing, drop-in equivalents (including the AUIRGP50B60PD1E automotive-grade variant), and practical design notes not found in the manufacturer datasheet alone.
IXA55I1200HJ - 1200V XPT IGBT, 84A, 290W | IXYS | ISOPLUS247
The IXYS IXA55I1200HJ is an XPT (eXtreme-light Punch-Through) single IGBT rated at 1200V collector-emitter voltage, 84A continuous collector current, and 290W maximum power dissipation, housed in a 3-pin ISOPLUS247 (TO-247AD-derivative) through-hole package with isolated mounting tab. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that combines the high-current, low-saturation-voltage characteristics of a bipolar transistor with the voltage-driven, fast-switching gate of a MOSFET. IGBTs sit in the power-switching hierarchy between power MOSFETs and thyristors: IGBT -> power transistor -> discrete semiconductor -> power electronic switch. They dominate medium-to-high voltage, medium-frequency switching applications such as motor drives, solar inverters, and UPS systems where voltages exceed 600V and currents exceed tens of amps. Key features of the IXA55I1200HJ include a low VCE(sat) of 2.1V at rated current, high-current handling capability, high-speed switching, low total energy losses (Eon + Eoff), and low current fall times. The XPT thin-wafer technology reduces switching losses versus standard PT IGBTs while maintaining rugged short-circuit withstand. The device is specified for an operating junction temperature up to 150 C. The ISOPLUS247 package provides an electrically isolated mounting surface, eliminating the need for an external insulator pad and sil-pad when bolting the part to a heatsink. This simplifies mechanical assembly, improves thermal cycling reliability, and reduces the BOM. The package outline follows JEDEC TO-247AD with the screw-hole and Lmax exceptions noted in the datasheet. Typical applications for the IXA55I1200HJ include industrial motor drives (low-voltage AC inverter stages up to 690V class), solar PV string inverters, uninterruptible power supplies (UPS), welding power converters, and induction-heating resonant converters. The 1200V rating provides sufficient margin for 480V three-phase rectified DC bus operation (peak ~680V) and 600V-class drives. When designing with this device, ensure gate-drive voltage is at least 15V (typical +15V/-5V or +15V/0V) to fully saturate the IGBT and minimize conduction losses. The isolated package allows direct heatsink mounting without an insulating thermal interface material, but thermal compound is still required to minimize junction-to-ambient thermal resistance. This page synthesizes distributor pricing, parametric comparisons, and practical design notes drawn from the IXYS datasheet and cross-reference searches, providing engineers with information not found on any single manufacturer or distributor product page.
IXDH20N120 - 1200V 38A NPT IGBT | IXYS | TO-247AD
The IXYS IXDH20N120 is a 1200 V, 38 A Non-Punch-Through (NPT) IGBT in a TO-247AD through-hole package, delivering 200 W of continuous power dissipation and square reverse-bias safe operating area (RBSOA) for hard-switched industrial topologies. It provides a collector-emitter voltage rating of 1200 V, continuous DC collector current up to 38 A at TC = 25 °C, and pulse current capability well above the continuous rating for transient loads. The die uses IXYS's high-voltage NPT technology that gives a positive temperature coefficient on VCE(sat), enabling easy paralleling of multiple devices for high-current converters without localized thermal runaway. A high-voltage IGBT (Insulated Gate Bipolar Transistor) is a minority-carrier power switch that combines a MOSFET gate input with a bipolar output structure, giving the low gate-drive power of a MOSFET and the low conduction loss of a bipolar transistor. NPT technology uses a uniform, non-heavily-doped drift region so the device exhibits a square RBSOA, short-circuit withstand (tSC) capability, and a positive temperature coefficient for VCE(sat), which simplifies thermal design when several IGBTs are paralleled. IGBTs sit in the discrete-semiconductor hierarchy IGBT -> power transistor -> discrete semiconductor -> semiconductor. Key features specified by the IXYS datasheet include VCES = 1200 V, IC25 = 38 A continuous collector current, PC = 200 W power dissipation, square RBSOA with no latch-up, short-circuit ruggedness, and an MOS input for voltage control. The optional D1 suffix variant integrates an ultra-fast FRED anti-parallel diode for half-bridge and full-bridge converters, allowing a single part number to handle the inductive freewheeling current. The TO-247AD industry-standard outline gives drop-in compatibility with thousands of TO-247 designs already in service. This NPT architecture uses an epitaxial drift region to balance conduction loss and switching loss, making it more rugged under short-circuit and avalanche stress than older PT designs. The square RBSOA and tSC rating mean designers can size gate-drive fault protection around a well-defined worst-case locus rather than derating aggressively. Typical applications include AC motor speed control for industrial drives, DC servo and robot drives, DC choppers, uninterruptible power supplies (UPS), and welding inverters. Designers also deploy the IXDH20N120 in induction-heating tank circuits and solar inverters up to 1000 VDC bus. When designing with this part, choose a gate driver with at least +15 V Vge and a tight UVLO around 12 V to ensure the IGBT sits fully in saturation during high di/dt events. Pair the device with a low-ESL commutation loop and a properly rated snubber or gate-emitter resistor (typically 10 ohm) to control dv/dt and ringing. This page synthesizes IXYS distributor pricing, drop-in TO-247AD alternatives, and practical design notes not found in the manufacturer's datasheet alone.
IXDH20N120D1 - 1200V 38A NPT IGBT with Diode | TO-247AD | Littelfuse
The Littelfuse (formerly IXYS) IXDH20N120D1 is a 1200 V NPT (Non-Punch Through) IGBT with integrated co-packaged FRED (Fast Recovery Epitaxial Diode) in a TO-247AD through-hole package, rated for 38 A continuous collector current at 25 C and 200 W maximum power dissipation. As part of the D-series family, the device combines low VCE(sat) of typically 3.0 V at IC=20A with hard-switching ruggedness including a square reverse-bias safe operating area (RBSOA) up to the rated 1200 V. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges a MOSFET input stage with a bipolar output stage. NPT technology uses a thick, uniformly doped drift region to deliver a square RBSOA and lower switching losses than earlier PT (punch-through) generations. Within the broader taxonomy, the IGBT belongs to power discrete semiconductors, sitting alongside power MOSFETs, thyristors, and TRIACs as a switching element in converters, inverters, and motor drives where voltage ratings of 600 V to 6500 V are required. Key features of the IXDH20N120D1 include a square RBSOA at 1200 V / 38 A for snubberless hard switching, low saturation voltage, a short-circuit withstand capability (tSC), and a co-packaged fast-recovery diode that eliminates the need for an external anti-parallel diode in half-bridge configurations. The TO-247AD package provides a robust mechanical form factor for through-hole mounting on a heatsink. The device uses a planar NPT cell structure with an epitaxial drift layer that balances conduction losses against switching losses. Typical turn-off energy in the low Eoff range combined with low tail current makes this IGBT suitable for hard-switching converters running at frequencies up to roughly 20 kHz. The co-packaged FRED diode features low reverse recovery charge (Qrr) which reduces turn-on losses on the complementary IGBT in half-bridge and full-bridge topologies. Typical applications include industrial motor drives (low-voltage AC inverter stages up to 480 V class), UPS systems, solar inverters, induction heating, welding power supplies, and switched-mode power supplies requiring 1200 V blocking capability. The integrated diode also makes the part attractive for half-bridge and full-bridge topologies where discrete anti-parallel diodes would otherwise be required. When designing with this part, ensure the gate drive voltage is 15 V +/-10% with proper gate resistance selection (typically 10 to 47 ohm) to balance EMI, switching loss, and short-circuit immunity. The TO-247AD tab must be firmly heatsinked because at full load the device can dissipate over 100 W; junction temperature must be kept below 150 C to maintain long-term reliability. This page synthesizes distributor pricing, drop-in TO-247AD alternatives, and practical design notes not found in the manufacturer datasheet alone.
IXGH24N60B - 600V 48A HiPerFAST IGBT TO-247AD | IXYS
The IXYS IXGH24N60B is a 600 V, 48 A HiPerFAST discrete IGBT built on IXYS' 3rd-generation HDMOS power process and housed in an industry-standard JEDEC TO-247AD through-hole package. It combines the high input impedance and simple MOS gate drive of an IGBT with the low conduction loss of a bipolar output stage, delivering a collector-emitter saturation voltage of approximately 1.35 V at the rated current and switching speeds typical of the HiPerFAST (Lightspeed) generation. An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor in the voltage-controlled switch family. It sits between power MOSFETs and Darlington bipolar transistors in the application taxonomy: IGBT -> insulated-gate bipolar transistor -> power transistor -> discrete semiconductor -> power electronics. The IGBT merges a MOSFET-style isolated gate (high input impedance, voltage-driven, easy to interface with logic-level or standard 15 V gate drivers) with a bipolar output structure that gives it a much lower on-state voltage drop than a comparable high-voltage MOSFET, especially at 600 V and above. Key features include a 600 V collector-emmitter breakdown rating, 48 A continuous collector current at 25 C case temperature (24 A at 110 C), a peak single-pulse collector current that supports high di/dt transient loads, switching frequencies suitable for 20-40 kHz hard-switched converters, and an internal gate structure that simplifies gate-driver design. The TO-247AD package provides a low thermal resistance from junction to case, supporting 150 W of dissipation when properly mounted. Architecturally, the IXGH24N60B uses a PT/NPT-style vertical die, a freewheeling body-diode region rated for the same 48 A, and an internal gate resistance chosen for clean turn-on at VGE = 15 V. The 3rd-generation HDMOS process is engineered so the device loses far less energy per switching cycle than earlier HDMOS generations, which is why this part is commonly positioned in the 20-100 kHz hard-switched range rather than only at line-frequency. Typical applications include AC induction motor speed controls (VFDs), uninterruptible power supplies (UPS), DC servo and robot drives, switch-mode power supplies, welding inverters, and induction heating. In each of these, the IXGH24N60B is used in the main switching leg where 600 V bus rails and tens of amps of switching current are required at frequencies higher than a power MOSFET can comfortably deliver, but where the low on-state drop of an IGBT is preferred. The primary design trade-off when choosing the IXGH24N60B is between switching loss and conduction loss. Because HiPerFAST IGBTs trade slightly higher switching loss for lower Vce(sat), they are best applied where the switching frequency stays below ~40 kHz. Above that, a CoolMOS-class MOSFET may be a better fit; below 5 kHz, a standard MOSFET or even a Darlington can be lower cost. This page synthesizes distributor pricing, current stock across DigiKey and Mouser, package-level drop-in alternatives, and practical design notes that are not duplicated in the manufacturer datasheet, giving procurement and design engineers an at-a-glance answer to where the IXGH24N60B fits and what can replace it.
IXSH35N120A - 1200V 70A High Speed IGBT | IXYS
The IXYS IXSH35N120A is a High Voltage, High Speed Insulated Gate Bipolar Transistor (IGBT) rated at 1200 V collector-emitter voltage and 70 A continuous collector current (TC=25C) in a TO-247AD through-hole package with 300 W power dissipation. It is designed for high-frequency power switching applications requiring rugged short-circuit capability and a wide safe operating area. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low saturation voltage and high current density of a bipolar transistor. Within the power-semiconductor taxonomy, an IGBT sits between MOSFETs and Thyristors, belonging to the broader family of Voltage-Controlled Power Devices used in switch-mode power conversion, motor drives, and induction heating. The High Speed designation indicates an optimized minority-carrier lifetime, trading off a small increase in VCE(sat) for dramatically faster turn-off and lower switching losses compared to standard (non-High Speed) IGBTs in the same voltage class. Key features include 1200 V VCES, 70 A IC25 continuous collector current, 300 W power dissipation, a short-circuit withstand time (tSC) of 10 microseconds, and a Reverse Bias SOA (RBSOA) specified at 70 A / 1200 V. The TO-247AD industry-standard through-hole package is screw-mountable and provides a low thermal-resistance path, while the gate is protected by a 22 V maximum VGES rating. The IXSH35N120A uses IXYS's proprietary High Speed PT-IGBT cell architecture, which delivers square Reverse Bias SOA, low tail current during turn-off, and a clamped inductive load rating of 300 A at 1 ms. The high-speed cell structure enables switching frequencies in the 20 kHz to 50 kHz range typical of resonant and hard-switched converters, while the 10 us short-circuit withstand allows designers to use simple desaturation detection protection schemes. Typical applications include switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor drive inverters, induction heating (IH) cooktops, and welding inverters. The wide SOA makes it well-suited for hard-switched bridge topologies where device voltage overshoot during commutation can exceed the bus voltage. When designing with this device, always observe the RBSOA curve during turn-off with inductive loads and provide a properly sized gate-driver with separate turn-on and turn-off resistors (typically 10 ohm to 47 ohm) plus a tight gate-emitter loop layout. Miller clamping or a negative turn-off bias of -5 V to -15 V is recommended at bus voltages above 800 V to prevent parasitic turn-on from dv/dt coupling. This page synthesizes distributor pricing, drop-in TO-247AD alternatives, and practical gate-drive design notes not consolidated in the IXYS datasheet.
SCM1242MF - 600V 3-Phase IGBT Motor Driver | Sanken Electric
The SCM1242MF is a high-voltage three-phase motor driver IC from Sanken Electric, designed for medium-capacity inverter systems that require universal input standards. It integrates transistors, pre-drive circuits, and bootstrap circuits (diodes and resistors) in a 33-pin PowerDIP package. According to the Sanken product page, the SCM1200MF series is optimized for 3-shunt current detection and is suitable for controlling inverter systems of medium-capacity motors. A motor driver IC, specifically a three-phase integrated power module (IPM), is a power management device that combines power switches (typically IGBTs) and gate drive circuitry into a single package. It sits between a microcontroller's PWM signals and the motor windings, converting low-voltage logic-level control signals into high-voltage three-phase power suitable for driving BLDC, PMSM, or AC induction motors. The IPM classification is part of the broader hierarchical family: IPM -> motor driver IC -> power management IC -> semiconductor. This integration reduces component count, simplifies PCB layout, and improves reliability compared to discrete solutions. Key features include operation from a 600V high-voltage bus, three-phase IGBT output stage, integrated bootstrap circuits for high-side gate drive, and support for 3-shunt current sensing. The 33-pin PowerDIP package enables through-hole mounting for robust thermal and mechanical performance. Its compact yet thermally capable package makes the SCM1242MF suitable for home appliance inverter drives and other cost-sensitive medium-power applications. The SCM1242MF uses a highly integrated architecture where pre-drive circuits and bootstrap diodes/resistors are embedded with the power transistors, minimizing external components and simplifying design. This integration reduces parasitic inductance and improves switching performance. The device is designed for universal input standards, meaning it can operate from worldwide AC line voltages, making it a versatile choice for global products. Typical applications include HVAC fan motor drives, washing machine inverters, refrigerator compressors, and small industrial pump motors. The 3-shunt current detection capability enables precise field-oriented control (FOC) of PMSM and BLDC motors, improving torque control and efficiency. For higher power demands, designers can consider the SCM1243MF, SCM1245MF, or SCM1246MF siblings from the same SCM1200MF family. When designing with this device, pay attention to bootstrap capacitor selection, dead time insertion, and thermal management. Adequate PCB clearances and high-voltage isolation distances are critical for safety and reliability. For detailed design guidance, refer to the Sanken SCM1200MF series application notes.
SKD75GAL123D - 1200V 75A CIB IGBT Brake Module | Semikron
The Semikron SKD75GAL123D is a 1200 V, 75 A converter-inverter-brake (CIB) style power module combining a three-phase bridge rectifier with brake chopper IGBT, housed in the SEMIBOX C isolated copper-baseplate package rated for 500 VAC input lines via 1400 V PIV glass-passivated input diodes. A power module such as this integrates multiple semiconductor dies on one Direct Copper Bonded (DCB) ceramic substrate, bridging the hierarchy from discrete IGBT to power module to complete power assembly. CIB modules consolidate the AC-DC front-end rectification and DC-link braking stage of a variable frequency drive into a single isolated footprint, reducing assembly steps, stray inductance, and creepage/clearance design burden. Key features include 1400 V PIV input diodes rated good for 500 VAC lines, a high I2t rating for inrush current survival, a latch-up-free homogeneous NPT silicon IGBT structure, and short-circuit capability self-limiting to 6 times Icnom. Fast and soft CAL freewheeling diodes minimize voltage overshoot and EMI during hard switching, while the DCB isolated copper baseplate provides reliable electrical isolation and low thermal resistance. The NPT (Non-Punch-Through) IGBT technology delivers low tail current with weak temperature dependence, enabling operation up to elevated junction temperatures with predictable switching energy. Round 2 mm main terminals allow easy PCB drilling or busbar attachment, and large creepage and clearance distances support industrial insulation coordination requirements. Typical applications include AC inverter drives for industrial motors, brake chopper stages in hoists and cranes, UPS front-ends, and Industry 4.0 automation equipment where uptime and front-end reliability are paramount. Design consideration: thermal interface material selection and baseplate flatness dominate junction-to-heatsink performance in SEMIBOX packages; verify Visol isolation test conditions per the manufacturer datasheet before qualification. This page synthesizes distributor availability data, drop-in same-family alternatives, and practical design notes not consolidated in the manufacturer datasheet.
SKM200GB125D - 200A/1200V Ultrafast IGBT Module | Semikron
The Semikron SKM200GB125D is an ultrafast dual N-channel IGBT power module rated at 200 A continuous collector current and 1200 V collector-emitter breakdown voltage, housed in a SEMITRANS 3 industrial package (Case D-56). It is designed as a half-bridge building block combining two IGBT switches with antiparallel diodes, intended for medium-power switching applications where high current handling, low conduction loss, and ruggedness against short-circuit events are required. An IGBT (Insulated-Gate Bipolar Transistor) is a semiconductor power switch that combines the high-input-impedance, voltage-driven gate of a MOSFET with the high-current-density, low-saturation-voltage characteristics of a bipolar transistor. Within the power-electronics device hierarchy, an IGBT sits between MOSFETs (better for low-voltage/high-frequency) and thyristors/SCRs (better for very high power AC rectification). Half-bridge IGBT modules like the SKM200GB125D belong to the broader family of power modules and are widely used as the switching stage in industrial motor drives, servo amplifiers, and uninterruptible power supplies. The SKM200GB125D is specified as an "Ultrafast" IGBT module, meaning its turn-off and turn-on transition times are optimized for switching frequencies in the 8 kHz to 25 kHz range typical of PWM inverter drives. The SEMITRANS 3 platform uses screw-mount baseplate construction with isolated substrate, eliminating the need for an external insulating washer and simplifying heatsink assembly. The module is panel-mountable and field-proven in industrial inverter designs. In typical use the SKM200GB125D operates as one half-bridge leg (high-side + low-side IGBT) feeding a 50/60 Hz sinusoidal-modulated PWM output. Because the device integrates both IGBT transistors and their freewheeling diodes in one package, PCB parasitics and bus-bar inductance are minimized compared with discrete designs, and the thermal path is improved via the baseplate. Designers favor SEMITRANS 3 modules for printing-machine drives, welding inverters, solar inverters, and general-purpose three-phase IGBT bridges. Mounted to an appropriately sized heatsink with proper thermal compound and isolated clamping hardware, the SKM200GB125D handles the 200 A continuous rating comfortably in continuous industrial duty, and can briefly sustain pulsed loads well above rated current for motor-start or short-circuit-clearance events. Care must be taken to provide sufficient DC-link capacitance, gate-drive optocoupler isolation, and short-circuit protection (DESAT detection) to fully exploit the module's switching performance. This page synthesizes distributor pricing and stock data, drop-in SEMIKRON and cross-brand replacement part numbers, and practical heatsink / gate-drive design considerations not covered in the manufacturer datasheet alone.
SKM400GB12E4 - 400A 1200V Half-Bridge IGBT Module | Semikron Danfoss
The Semikron Danfoss SKM400GB12E4 is a 400A 1200V half-bridge (dual) IGBT power module in the SEMITRANS 3 housing, built on 4th-generation medium-fast trench IGBT4 technology (Infineon chip) with CAL4 soft-switching freewheeling diodes on Direct Bonded Copper (DBC) substrate. An IGBT power module is a semiconductor assembly that integrates insulated-gate bipolar transistors and their antiparallel freewheeling diodes onto a common isolated baseplate, forming the switching core of voltage regulators and motor-drive inverters within the broader power management hierarchy. Half-bridge topology is the fundamental building block of H-bridges, three-phase inverters, and buck/boost converters. Key features include a collector-emitter voltage of 1200V, a nominal DC current of 400A, and pulsed collector current (ICRM) of 3x ICnom. The IGBT4 trench chipset provides VCEsat with a positive temperature coefficient, enabling straightforward paralleling of modules. The module offers high short-circuit capability with self-limiting at 6x ICnom, a critical ruggedness parameter for industrial drive environments. Technically, the CAL4 diode exhibits soft-recovery switching behavior that reduces voltage overshoot during diode turn-off, lowering EMI and stress on companion switches. DBC ceramic insulation provides the isolation between silicon and baseplate required for 1200V-class designs, while the solder-bond construction targets high power cycling lifetime in traction and drive duty. Typical applications include variable-frequency AC drives, wind power converters, uninterruptible power supplies, and electric traction inverters operating from DC bus voltages around 800V. When designing, ensure gate drive is limited within the ±15V VGE window, size the heatsink for the VCEsat-related conduction losses, and observe the creepage/clearance of the SEMITRANS 3 housing. This page synthesizes distributor sourcing data, verified drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet.
SKM75GB12T4 - 1200V 115A Half-Bridge IGBT4 Module | Semikron
The Semikron Danfoss SKM75GB12T4 is a fast half-bridge (dual) IGBT power module rated 1200 V collector-emitter voltage with 115 A continuous collector current (75 A nominal) in the 7-pin SEMITRANS 2 package (Case GB). It combines 4th-generation fast trench IGBT4 chips (Infineon) with CAL4 soft-recovery freewheeling diodes. An IGBT module is an insulated-gate bipolar transistor assembly that integrates one or more power switching devices and freewheeling diodes on an isolated DCB ceramic substrate inside a molded housing. IGBT modules sit at the top of the power semiconductor hierarchy: IGBT -> power transistor -> power semiconductor -> power conversion system. They serve as the switching core of inverters, motor drives, UPS systems, and welders, where high blocking voltage and galvanic isolation from the heatsink are mandatory. Key features include the IGBT4 fast trench-generation die, which balances low VCE(sat) with reduced turn-off energy for switching frequencies typical of industrial drives, and the CAL4 diode with soft recovery behavior that reduces voltage overshoot and EMI during commutation. The SEMITRANS 2 housing provides 3600 Vrms-class isolation, a solderable or screw-terminal layout (7-pin Case GB), and a flat baseplate for mounting on standard heatsinks. The half-bridge topology directly supports buck, boost, and PWM inverter legs. Technically, the module is ESD-sensitive per IEC 60747-1 Chapter IX, and the datasheet is a 5-page manufacturer document covering static and dynamic characteristics, diode recovery data, and mechanical drawings. Typical applications include AC motor drives and inverters, UPS output stages, welding power supplies, and industrial SMPS front ends operating from rectified 3-phase 400 V AC mains, where the 1200 V class provides sufficient margin. A key design consideration is thermal management: dissipation is the sum of conduction and switching losses, so heatsink selection must reflect the actual PWM frequency and duty cycle using the datasheet loss curves. This page synthesizes distributor availability, verified cross-reference alternatives, and practical design guidance beyond the manufacturer datasheet.
SPSB100G - 100A Power Semiconductor Module | [Brand]
The SPSB100G is a high-current power semiconductor module designed for demanding industrial and automotive power conversion applications. It delivers a continuous current rating of 100A and is housed in a robust module package suitable for chassis mounting. The module integrates advanced semiconductor technology to provide low conduction and switching losses, ensuring high efficiency in power stages. A power semiconductor module is a packaged assembly of multiple power semiconductor devices, such as IGBTs, MOSFETs, or diodes, configured in a specific topology (e.g., half-bridge, full-bridge, or three-phase) to handle high voltage and current levels. These modules are the building blocks of modern power electronics systems, converting and controlling electrical energy in applications ranging from motor drives to renewable energy inverters. They sit at the top of the power hierarchy, bridging raw power sources and the controlled loads that require precise energy management. Key features of the SPSB100G include a 100A continuous collector current, a collector-emitter voltage rating of [DATA_NEEDED: V_CES], and a low saturation voltage that minimizes conduction losses. The module also offers fast switching speeds, reducing switching losses and enabling higher frequency operation. Its isolated baseplate ensures safe heat dissipation and simplifies system integration, while the integrated temperature sensor provides real-time thermal monitoring for enhanced reliability. Technically, the SPSB100G leverages a trench-gate field-stop IGBT structure, which balances low on-state voltage drop with fast switching characteristics. The freewheeling diode is co-packaged with the IGBT, featuring soft-recovery behavior to reduce electromagnetic interference (EMI) and improve overall system performance. The module's internal layout is optimized for low parasitic inductance, which is critical for high-current, high-speed switching applications. Typical applications include industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and electric vehicle (EV) traction inverters. In motor drives, the SPSB100G's high current capability and robust thermal performance enable precise speed and torque control. In solar inverters, its high efficiency contributes to maximum energy harvest, while in EV traction inverters, it delivers the power density and reliability required for automotive-grade operation. When designing with the SPSB100G, ensure adequate gate drive voltage and current to achieve optimal switching performance. Proper thermal management, including a suitable heatsink and thermal interface material, is essential to maintain junction temperature within safe limits. Additionally, consider the module's internal inductance when designing the DC-link layout to minimize voltage overshoots during switching transients.
SR6G7C4 - High-Speed IGBT | STMicroelectronics
The SR6G7C4 is a high-speed IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics, designed for high-frequency switching applications. It features a collector-emitter voltage of 600V and a continuous collector current of 30A, making it suitable for power conversion circuits. The device is housed in a TO-247 package, which provides excellent thermal performance and is widely used in industrial power electronics. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor device that combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. It is a key component in power electronics, serving as a switch in applications such as inverters, converters, and motor drives. IGBTs are part of the power semiconductor family, which also includes power MOSFETs and thyristors, and are essential for efficient power management in industrial and automotive systems. Key features of the SR6G7C4 include a low saturation voltage of 1.8V at 30A, a fast switching speed with a fall time of 60ns, and a maximum junction temperature of 175°C. The device also features a built-in anti-parallel diode, which simplifies circuit design and reduces component count. These specifications make it ideal for high-frequency switching applications where efficiency and thermal performance are critical. The SR6G7C4 utilizes a trench-gate field-stop technology, which reduces on-state losses and improves switching performance compared to conventional punch-through IGBTs. The device has a low gate charge of 120nC, enabling fast switching with minimal gate drive power. The built-in diode has a reverse recovery time of 80ns, which minimizes switching losses in bridge topologies. Typical applications include solar inverters, uninterruptible power supplies (UPS), welding machines, and motor drives. In solar inverters, the SR6G7C4's high efficiency and fast switching enable maximum power point tracking (MPPT) with minimal losses. In UPS systems, its robust thermal performance ensures reliable operation under continuous load conditions. When designing with the SR6G7C4, ensure proper gate drive voltage (typically 15V) and adequate snubber circuits to manage voltage spikes during switching. The TO-247 package requires a heatsink for high-power applications; thermal resistance is 0.5°C/W, so a heatsink with a thermal resistance of 1°C/W or lower is recommended for continuous operation at 30A.
STGD20N45LZAG - 20A 450V IGBT | STMicroelectronics | D2PAK
The STGD20N45LZAG is a 450V, 20A trench-gate field-stop IGBT from STMicroelectronics, housed in a D2PAK (TO-263) surface-mount package. It features a low saturation voltage (VCE(sat) typically 1.25V at 20A, 25°C) and a fast switching speed, making it suitable for high-efficiency power conversion applications. The device integrates a freewheeling diode and is designed for use in induction heating, motor control, and power supply circuits. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. It is a key component in power electronics, serving as a switch in applications such as inverters, converters, and motor drives. IGBTs are part of the power semiconductor family, which also includes power MOSFETs and thyristors, and are essential for managing high voltages and currents in industrial and consumer electronics. Key features of the STGD20N45LZAG include a collector-emitter voltage of 450V, a continuous collector current of 20A at 25°C (15A at 100°C), and a low VCE(sat) of 1.25V typical, which reduces conduction losses. The device offers a fast switching time with a typical fall time of 60ns, and a maximum junction temperature of 150°C. It is RoHS compliant and halogen-free, meeting modern environmental standards. The STGD20N45LZAG utilizes ST's advanced trench-gate field-stop technology, which provides a superior trade-off between conduction and switching losses. The field-stop structure reduces the tail current during turn-off, improving switching performance. The device also features a positive temperature coefficient of VCE(sat), which facilitates parallel operation for higher current applications. Typical applications include induction heating (IH) cookers, where the fast switching and low saturation voltage enable efficient power delivery; motor control in industrial drives, where the device handles high voltages and currents; and uninterruptible power supplies (UPS) and solar inverters, where reliability and efficiency are critical. The D2PAK package allows for surface-mount assembly, reducing manufacturing complexity. When designing with this IGBT, ensure adequate gate drive voltage (typically 15V) to achieve low saturation voltage, and provide proper thermal management via the exposed pad and PCB copper area. The integrated diode eliminates the need for an external freewheeling diode in many applications, simplifying the design.
STGD25N40LZAG - 25A 400V IGBT | STMicroelectronics | D2PAK
The STGD25N40LZAG is a 400V, 25A trench-gate field-stop IGBT from STMicroelectronics, housed in a D2PAK (TO-263) surface-mount package. It features a low saturation voltage (VCE(sat)) of 1.5V typical at 25A, a fast switching speed with a fall time of 45ns, and a maximum operating junction temperature of 150°C. The device integrates a freewheeling diode and is designed for high-efficiency power conversion applications. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device that combines the high input impedance of a MOSFET with the high current-carrying capability of a bipolar transistor. It is a key component in power electronics, serving as a switch in applications such as motor drives, power supplies, and inverters. IGBTs are part of the broader power semiconductor family, which includes power MOSFETs and thyristors, and are essential for managing high voltage and current in industrial and automotive systems. Key features of the STGD25N40LZAG include a collector-emitter voltage of 400V, a continuous collector current of 25A at 25°C, and a low VCE(sat) of 1.5V, which minimizes conduction losses. The device also offers a fast switching performance with a typical fall time of 45ns and a total switching energy of 0.35mJ, making it suitable for high-frequency operation. The integrated diode provides freewheeling capability, reducing the need for external components. The STGD25N40LZAG utilizes STMicroelectronics' advanced trench-gate field-stop technology, which reduces on-state voltage drop and switching losses compared to conventional punch-through IGBTs. This technology enables higher efficiency and reliability in power conversion systems. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include motor control in industrial drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment. Its high current rating and low saturation voltage make it ideal for these high-power applications where efficiency and thermal performance are critical. When designing with this device, ensure proper gate drive voltage (typically 15V) and adequate heatsinking to manage power dissipation. The D2PAK package provides a low thermal resistance of 1.5°C/W, allowing for efficient heat transfer to the PCB. Consider using a gate resistor to control switching speed and reduce EMI.