MOSFET
제품 (1294)
MMRF1306HR5 - 1250W CW 50V LDMOS RF MOSFET 1.8-600 MHz | NXP
The NXP Semiconductors MMRF1306HR5 is a high-ruggedness N-channel enhancement-mode lateral RF power LDMOS transistor delivering 1250 W CW output power at 50 V from 1.8 MHz to 600 MHz, housed in the NI-1230H-4S ceramic/oligidair air-cavity package. An RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor FET optimized for high-frequency, high-power amplification. It belongs to the hierarchy: RF power transistor -> RF power MOSFET -> LDMOS -> power semiconductor. LDMOS devices dominate commercial and defense RF power applications because they combine high gain, high drain breakdown, and excellent thermal stability in a single planar CMOS-compatible process, enabling broadband amplifier line-ups from HF through UHF. Key features include 1250 W typical CW output power, 24 dB power gain at 230 MHz, 65% typical drain efficiency, and unmatched input/output designs that allow wideband use without external matching networks. The device operates from a 50 V drain supply and integrates electrostatic discharge (ESD) protection plus high-VSWR ruggedness for harsh radar and broadcast environments. The MMRF1306HR5 uses NXP's high-ruggedness LDMOS process with a via-tunable lateral source structure and gold metallization for long-term thermal cycling reliability. The unmatched common-source configuration simplifies broadband amplifier PCB layout and supports both CW and pulsed waveforms. Internal matching is limited to the package parasitics, leaving frequency-band tuning to the external matching network on the amplifier evaluation board. Typical applications include HF/VHF radar transmitters, industrial scientific medical (ISM) band heating, low-band UHF broadcast amplification, plasma generation, and high-power communications line-ups from 1.8 to 600 MHz. The wide frequency coverage makes it a versatile building block for multi-band amplifier modules. When designing with this device, ensure the thermal interface compound and mounting torque follow the NXP application note recommendations for the NI-1230H-4S package, since the ceramic air-cavity flange is the primary heat path. The unmatched input/output requires per-band matching networks but allows a single part to cover multiple applications, reducing bill-of-material complexity. This page synthesizes NXP datasheet parameters, distributor pricing, drop-in same-package alternatives, and practical thermal and matching notes not all collected in the original manufacturer datasheet, providing an engineer-ready reference for amplifier design evaluation.
MRF1511NT1 - 8W 175MHz 7.5V RF LDMOS | NXP Semiconductors
The NXP Semiconductors MRF1511NT1 is an RF power field-effect transistor using N-channel enhancement-mode lateral MOSFET (LDMOS) technology, delivering 8 W of output power at 175 MHz from a 7.5 V supply with a typical gain of 13 dB in a surface-mount PLD-1.5 (PLD1.5N) ceramic package. It is rated for 150 mA DC operation with a maximum power dissipation of 62.5 W under absolute ratings and is designed primarily for large-signal, common-source amplifier service in portable FM equipment operating at frequencies up to 175 MHz. A radio-frequency power MOSFET is a discrete transistor optimized to deliver useful RF output power into a load (typically an antenna through an impedance-matching network) rather than to operate as a low-level analog switch. LDMOS in particular combines a lateral channel with a lightly-doped drain extension that supports high breakdown voltage and high drain efficiency on a single die, making it the dominant technology for sub-GHz broadband RF amplification. The MRF1511NT1 sits at the low-power end of NXP's LDMOS family, intended for handheld or portable radios rather than base-station PAs. Key features include a 7.5 V nominal drain supply, 13 dB typical power gain at 175 MHz, broadband response from VHF through 175 MHz, a high-gain lateral structure that simplifies driver-stage design, and a rugged surface-mount ceramic carrier (PLD-1.5) suited to reflow assembly. The device's lateral construction yields excellent thermal conductivity from die to package, and its broadband impedance profile allows the same device to cover multiple FM bands without re-matching. Architecturally the part is a single N-channel enhancement-mode LDMOS die mounted on a ceramic flange-less carrier. The lateral drift region shifts electric field away from the gate oxide, raising the avalanche breakdown rating for 7.5 V operation and improving resistance to load-mismatch stress. Drain efficiency at 7.5 V is intrinsically limited by the low supply rail, so the part trades efficiency for the convenience of running directly from a single lithium-ion cell. Typical applications include portable FM transmitters, low-power VHF amplifiers, two-way radio driver stages, RFID reader PAs at 134 kHz/13.56 MHz after matching, and broadband laboratory amplifiers. The 7.5 V rail is convenient for single-cell Li-ion (4.2 V max) plus a small boost converter. Thermal management requires attention because the 62.5 W absolute rating assumes a properly soldered thermal pad; in portable FM service the duty cycle is low, so smaller copper areas are usually sufficient. Designers should confirm impedance-match network design at the target frequency and provide adequate input decoupling; the EN/Enable function of an LDMOS is normally handled by gate-bias switching rather than a dedicated EN pin on this part.
MRF1513T1 - 3W 520MHz 12.5V RF Power MOSFET | NXP
The NXP MRF1513T1 is a 3 W, 520 MHz, 12.5 V lateral N-channel enhancement-mode broadband RF power MOSFET designed for high-gain, large-signal common-source amplifier applications. Housed in an over-molded plastic PLD-1.5 surface-mount package, the device delivers 15 dB typical power gain at 520 MHz from a 12.5 V supply while targeting portable 7.5 V and mobile 12.5 V FM equipment. An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than switching. Within the transistor taxonomy, it sits above small-signal RF MOSFETs and below discrete RF LDMOS power transistors in the device hierarchy; it is part of the broader power management and RF amplifier ecosystem used in wireless transmitters. The lateral MOSFET architecture employed here trades absolute peak power for broadband matchability and ease of paralleling in push-pull stages. Key features of the MRF1513T1 include a 12.5 V typical drain operating voltage, 3 W output power at 520 MHz, 15 dB typical power gain, and 50 percent typical drain efficiency on NXP evaluation boards. The device is specified for broadband commercial and industrial service from VHF through low UHF, and the over-molded PLD-1.5 package eliminates flange-mount hardware while still providing a solderable thermal path to the PCB ground plane. The lateral DMOS-style construction with a diffused source provides excellent thermal stability under continuous-wave drive, and the part is characterized for both CW and FM modulated waveforms. Designers should note that the device is intended for class AB or class C biasing and is not characterized for linear modulation standards such as DVB-T or LTE; for those, consult NXP's higher-linearity MRF6-series LDMOS parts. Typical applications include 7.5 V handheld VHF/UHF transceivers, 12.5 V mobile FM land-mobile-radio power amplifiers, broadband driver stages for higher-power transmitters, industrial RF heating drivers, and commercial two-way radio final stages. The MRF1513T1 is commonly paired with driver-stage MRF134, MRF140, or MRF141 devices in cascaded amplifier chains. When designing with this part, ensure the PCB layout provides a continuous ground paddle beneath the PLD-1.5 package and that the input and output matching networks are realized with adequate 50 ohm microstrip launches. Designers should also derate output power above 70 degrees C case temperature to maintain long-term reliability. This page synthesizes the NXP datasheet MRF1513.pdf with current distributor stock and pricing, drop-in compatible alternatives in the same PLD-1.5 footprint, and practical RF layout notes not found in the manufacturer datasheet.
MRF1550NT1 - 50W 175MHz RF Power LDMOS FET TO-272-6 | NXP
The NXP Semiconductors MRF1550NT1 is a 50 W N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial RF power applications up to 175 MHz at 12.5 V supply. Housed in a TO-272-6 (WARP, tape-and-reel) surface-mount package, it delivers 14.5 dB typical power gain and is engineered for large-signal common-source amplifier stages in 12.5 V mobile FM radio equipment. The lateral DMOS architecture combines the high gain of a bipolar transistor with the ruggedness of a vertical power MOSFET. RF power transistors are specialized semiconductors designed to amplify high-frequency signals at substantial power levels with high linearity and efficiency. Within the broader hierarchy, RF MOSFETs sit alongside RF bipolar junction transistors (BJTs) as the dominant active devices in sub-GHz and low-microwave transmitters, with lateral double-diffused MOS (LDMOS) being the modern industry-preferred technology for the 50 MHz to 3 GHz range due to its high gain, high breakdown voltage, and ease of broadband matching. Key specifications include 50 W continuous-wave output power at 175 MHz, 14.5 dB power gain, 50 V drain-source breakdown (typical test condition), 12.5 V nominal supply, and operation into a 50 ohm load. The N-channel enhancement-mode structure means the device is normally off at zero gate bias, simplifying bias-circuit design and reducing quiescent current draw when the PA is disabled. The lateral drain-source construction supports broadband performance across commercial FM, VHF land-mobile, and industrial-scientific-medical (ISM) bands. Designed around a common-source amplifier topology, the MRF1550NT1 needs minimal impedance-matching effort across its rated band. The exposed WARP flange provides a low-thermal-resistance path to the PCB or heatsink, enabling continuous 50 W operation without external isolation circuitry beyond the matching network. A monolithic silicon die reduces parasitic inductance compared to discrete multi-chip assemblies. Typical applications include 12.5 V mobile FM transmitters, VHF land-mobile-radio (LMR) power amplifiers, and broadband industrial RF generators in the 100-200 MHz range. The part is widely deployed in commercial two-way radio infrastructure, repeater stations, and base-station PA stages where 50 W CW at 175 MHz represents a sweet spot for coverage and reliability. When designing with this part, ensure the thermal pad is properly soldered to a copper heat-spreader with a minimum footprint that keeps junction temperature below 200 degrees C. Input and output matching should follow the datasheet evaluation-board reference design and must accommodate the device's internal matching for stability across the full operating band. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not consolidated in the manufacturer datasheet alone. Cross-references to MRF1550FNT1 and the legacy Freescale-branded variants are listed in the alternatives section so engineers can quickly validate end-of-life migration paths.
MRF1570FT1 - 70W, 470MHz, 12.5V RF Power MOSFET | NXP
The NXP (formerly Motorola/Freescale) MRF1570FT1 is a 70 W lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications with operating frequencies up to 470 MHz. Housed in a ceramic-air-cavity TO-272-8 (Epoxy-sealed) flange-mount package, it delivers 10 dB typical power gain at 470 MHz from a 12.5 V DC supply while sustaining 70 W of CW output power. The die is built on NXP's laterally-diffused metal-oxide-semiconductor (LDMOS) process optimized for high breakdown voltage and high gain-bandwidth product. A radio-frequency power MOSFET (RF MOSFET) is a discrete power transistor purpose-built to amplify high-frequency signals at the output stage of a transmitter. Within the broader semiconductor taxonomy, RF MOSFETs sit under power transistors, which sit under discrete semiconductors, which sit under active electronic parts. The lateral architecture used in the MRF1570FT1 keeps the source contact on the die top side, allowing the drain current to flow laterally and producing much higher input impedance and gain than vertical VDMOS devices of equivalent rating - a defining advantage for VHF/UHF amplifier designers. Key features include 70 W minimum CW output power at 470 MHz, 10 dB minimum power gain (with typical values of 12-14 dB), 70% typical drain efficiency, excellent broadband response from 1.5 to 470 MHz, and built-in ESD protection. The device also integrates a stable bias network and is rated for 12.5 V DC drain supply operation. These figures originate from the original Motorola/Freescale datasheet later re-issued by NXP after the MRF1500-series family transferred to NXP. The MRF1570FT1 employs a lateral MOSFET structure with a drain-to-source breakdown voltage rated above 36 V and a thermally enhanced ceramic flange-mount package that allows direct bolt-down to an aluminum heatsink or chassis. The robust die geometry supports broadband matching and survives 5:1 VSWR mismatch at rated output power - a critical reliability metric for mobile radio service where antenna faults are common. Typical applications include 12.5 V mobile FM land-mobile-radio amplifiers operating in the 450-470 MHz commercial band, public-safety and business-band repeaters, broadband laboratory amplifiers, and industrial RF heating drivers. The high gain-bandwidth product also makes the part suitable for prototyping common-source Class AB and Class C amplifiers. When designing with the MRF1570FT1, ensure the device is mounted on a flat, clean heatsink with proper RF grounding. Bias sequencing must gate the drain voltage after RF drive to prevent parametric oscillation, and the input matching network should be broadband-optimized to capitalize on the device's wideband capability. This page synthesizes verified distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating the MRF1570FT1 for replacement or new amplifier builds.
MRF18030ALSR5 - 30W RF Power MOSFET 1.81-1.88GHz | NXP
The NXP MRF18030ALSR5 is a 30 W RF power MOSFET designed for high-performance wireless base-station amplifiers operating in the 1.81 GHz to 1.88 GHz DCS/PCS band, packaged in the NI-400S ceramic air-cavity flanged carrier. It operates from a 26 V drain supply and delivers 14 dB of small-signal gain at the rated output power. An RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized for high-frequency, high-power amplification in the radio-frequency spectrum (typically 1 MHz to 6 GHz). It belongs to the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> RF MOSFETs, and is purpose-built for use as the final or driver stage in base-station, broadcast, and industrial RF power amplifiers where conventional low-frequency MOSFETs would fail to deliver usable gain at microwave frequencies. The MRF18030ALSR5 features NXP's laterally-diffused metal-oxide-semiconductor (LDMOS) technology, which is the industry-standard device architecture for cellular base-station power amplifiers thanks to its excellent thermal stability, high gain, and broadband characteristics. Key differentiating specifications include 30 W CW output power, 14 dB gain, and operation across the full 1.81 GHz to 1.88 GHz DCS-1800/PCS-1900 transmit band. Its integrated ESD protection and wideband matching capability reduce the need for external protection circuitry. Architecturally, the device uses an enhanced-mode LDMOS FET with an internal input matching network and is designed for class-AB linear amplification. The flanged NI-400S air-cavity package provides a low thermal resistance path and is mechanically compatible with industry-standard RF power transistor mounting holes, allowing direct bolt-down assembly onto machined heatsinks. Per the manufacturer datasheet, the part is rated for 65 V maximum drain-source voltage and exhibits typical power-added efficiency in the 30-35% range at full output. Typical applications include DCS-1800 base-station final-stage power amplifiers, PCS-1900 cellular infrastructure drivers, and broadband RF power blocks in industrial scientific-medical (ISM) equipment operating in the adjacent 1.8 GHz spectrum. The wide frequency coverage makes it suitable as well for repeaters, microcells, and picocell radio units. When designing with this part, ensure the heatsink thermal design holds the flange temperature below the maximum rated value under worst-case load VSWR conditions. Adequate RF input and output matching networks are essential to realize the rated 14 dB gain and to maintain linearity in class-AB operation. This page consolidates distributor stock, parameter-level alternatives, and practical design notes so an RF design engineer can evaluate the MRF18030ALSR5 against drop-in substitutes before committing a PCB layout.
MRF18030BLSR3 - 30W 1930-1990 MHz RF Power MOSFET LDMOS | NXP
The NXP (formerly Freescale) MRF18030BLSR3 is a 30 W laterally-diffused metal-oxide-semiconductor (LDMOS) RF power field-effect transistor designed for GSM and GSM-EDGE base-station final-stage amplification in the 1930-1990 MHz band. Housed in the NI-400S ceramic surface-mount package (CASE 465E-04, Style 1), it operates from a 26 V DC supply, delivers 14 dB typical power gain at 2 GHz, and supports a frequency range from 1.8 GHz to 2 GHz per the manufacturer datasheet, with internal matching optimized for the targeted 1930-1990 MHz band. This part is the surface-mount (BLS) variant of the MRF18030 family and is intended for high-volume Doherty, microstrip, and PCB-based amplifier topologies. N-Channel Enhancement-Mode Lateral MOSFETs are a class of RF power transistors in which a laterally diffused channel under the gate oxide conducts between source and drain when a positive gate-source bias is applied. This architecture delivers high breakdown voltage, excellent thermal performance, and superior RF ruggedness versus bipolar alternatives, making LDMOS the dominant technology for cellular base-station power amplifiers from 700 MHz to 2.7 GHz. Key features include 30 W CW (or pulsed) output power capability at 1.93-1.99 GHz, 14 dB power gain at the design center frequency, 26 V drain supply operation, and an N-channel enhancement-mode gate that simplifies bias sequencing. The NI-400S ceramic package provides a low thermal resistance path from the die to the PCB or external heatsink, supporting 83.3 W absolute maximum power dissipation. The device is specified for GSM and GSM-EDGE waveforms and is suitable for FM, TDMA, CDMA, and multi-carrier amplifier applications where linearity and ruggedness are required. The MRF18030BLSR3 uses an enhancement-mode lateral MOSFET structure that requires a positive gate threshold (typically 2-3 V) and operates in Class AB for linear amplification or Class C for high-efficiency CW applications. Internal matching networks reduce external component count, and the high drain efficiency minimizes heat-sinking requirements in properly laid-out boards. The device is designed to withstand the high VSWR conditions typical of cellular base-station antennas. Typical applications include GSM and GSM-EDGE base-station final-stage power amplifiers, W-CDMA TV-spectrum amplification, multi-carrier amplifier modules, and infrastructure-grade RF power blocks operating in the 1930-1990 MHz TV band (DCS/PCS). It is also used in digital broadcasting transmitters and industrial RF heating systems where its 30 W class power level and frequency coverage are suitable. When designing with this device, careful attention must be paid to PCB thermal management; the NI-400S package requires a properly dimensioned copper footprint and, in many cases, an external heatsink to keep junction temperature within safe operating limits at full CW output power. Designers should also provide sufficient drain-supply decoupling and follow NXP's reference design for input/output matching network values to achieve the published 14 dB gain and efficiency figures.
MRF18060BLSR3 - 60W RF Power MOSFET 1930-1990 MHz | NXP
The NXP Semiconductors MRF18060BLSR3 is a 60 W lateral N-channel enhancement-mode RF power MOSFET designed for 1930-1990 MHz GSM base station applications, housed in an NI-780S ceramic surface-mount package (CASE 465-06, Style 1). It operates from a 26 V rail, delivers 60 W of CW output power with 13 dB typical gain, and is intended for PCN and PCS cellular infrastructure between 1800-2000 MHz. A lateral N-channel RF power MOSFET is a special class of power transistor fabricated using a lateral metal-oxide-semiconductor process rather than the vertical DMOS or GaN processes common at higher frequencies. Lateral MOSFETs provide an excellent balance of high gain, broadband flatness, and ruggedness for VHF through low-L-band operation, making them a long-standing reference design choice for cellular base-station power amplifiers. The MRF18060BLSR3 belongs to the RF power transistor family that sits beneath RF power amplifier modules and ultimately beneath the wireless base-station hierarchy: RF power MOSFET -> RF power transistor -> power semiconductor -> discrete semiconductor. Key features include 1930-1990 MHz operating range, 60 W CW output power at 26 V, 13 dB small-signal gain, and high efficiency suitable for GSM, TDMA, CDMA, and multi-carrier amplifier topologies. The NI-780S ceramic package offers stable thermal performance with a peak reflow temperature of 260 C and a maximum power dissipation rating of 180 W absolute, making it suitable for Class AB base-station PAs. The lateral MOSFET process provides inherent thermal stability and high breakdown voltage, while the broadband matching capability supports multi-carrier WLL applications. This transistor is specified for use in Class AB amplifier configurations for PCN/PCS cellular radio and WLL (Wireless Local Loop) infrastructure. When designing with this device, observe NXP's recommended gate bias sequencing (VGS applied before VDD) to prevent device damage, and pay close attention to the NI-780S landing pattern for thermal management. The NI-780S ceramic body requires careful PCB layout and a controlled thermal path to maintain junction temperature within safe limits.
MRF18085BLSR3 - 85W 26V 1.93-1.99GHz RF Power MOSFET | NXP
The NXP MRF18085BLSR3 is an 85 W, 26 V lateral N-channel enhancement-mode RF power MOSFET designed for GSM and GSM EDGE base station applications from 1930 to 1990 MHz. Housed in the NI-780 ceramic-metal hermetic package (CASE 465-06, STYLE 1), it is also suitable for TDMA, CDMA, and multicarrier amplifier applications. Key electrical parameters include 85 W output power, 26 V typical drain supply, ~273 W maximum dissipation capability, and operation across the 1930–1990 MHz band. An RF power MOSFET is a lateral metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power operation. Compared with earlier bipolar RF transistors, lateral MOSFETs offer higher gain, better thermal stability, and easier broadband impedance matching. MRF18085BLSR3 belongs to the NXP (formerly Motorola/Freescale) RF MOSFET family aimed at cellular base-station power amplifiers, sitting within the broader hierarchy: RF power transistor → RF power MOSFET → base-station PA device → wireless infrastructure semiconductor. Differentiating features include high power density at 1.93–1.99 GHz, integrated ESD protection structure, gold metallization for high reliability, ceramic-metal hermetic NI-780 package for low thermal resistance, and a high breakdown voltage tolerant of 26 V supply operation. The lateral MOSFET architecture supports broadband matching and simplifies PCB-level amplifier design. Architecturally, the device uses a lateral N-channel enhancement-mode MOSFET structure with a gate length tuned for the 2 GHz cellular band. The ceramic NI-780 package provides a low-inductance, low-thermal-resistance path for high-power RF operation, while the metal-sealed cofired ceramic body offers hermeticity required for telecom-grade reliability. Typical applications include GSM/EDGE base-station power amplifiers at 1.93–1.99 GHz, TDMA and CDMA driver or final-stage amplifiers, multicarrier cellular amplifiers, and other wireless infrastructure RF power stages requiring high gain and high efficiency at UHF frequencies. When designing with the MRF18085BLSR3, ensure adequate RF heatsinking via the package flange and use proper low-loss matching networks with sufficient DC blocking on input and output. Pay close attention to device bias sequencing to avoid exceeding the maximum rated drain voltage. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers evaluate availability, replacement options, and application fit for the MRF18085BLSR3.
MRF19045LSR5 - 9.5W RF Power MOSFET, 1930 MHz, NI-400S-240 | NXP
The NXP MRF19045LSR5 is a 9.5 W N-channel enhancement-mode lateral LDMOS RF power transistor designed for 1900 MHz to 2000 MHz base-station transmitter applications, housed in the NI-400S-240 ceramic-flanged package. It is specified at a test condition of 26 V drain bias with 550 mA quiescent current, delivering a minimum power gain of 14.5 dB at a typical operating frequency of 1.93 GHz. The device is intended for use in cellular PCN and PCS infrastructure in the 1930 MHz to 1990 MHz band. An LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) RF power transistor is a specialized MOSFET architecture in which the drift region is laterally diffused to support high breakdown voltage, high RF output power, and excellent thermal performance in a single die. RF power transistors sit within the broader hierarchy of power management semiconductors, and LDMOS is the dominant technology in macro-cell base-station power amplifiers up to approximately 3.8 GHz thanks to its high gain, high efficiency, and stable long-term RF performance. Key specifications of the MRF19045LSR5 include a drain-source voltage rating of 65 V, an output power of 9.5 W at the rated test condition, 14.5 dB minimum gain, and operation across 1900 MHz to 2000 MHz. The lateral MOSFET structure provides high input impedance and ease of broadband matching, while the air-cavity ceramic NI-400S-240 package offers low thermal resistance suitable for continuous-wave (CW) and modulated RF operation. Typical applications for the MRF19045LSR5 include TDMA and CDMA driver or final-stage amplifiers in 1.9 GHz to 2.0 GHz base stations, multicarrier amplifier (MCPA) lineups, and PCS/PCN repeater systems. The part functions as a Class AB push-pull or single-ended gain block, biased from a 26 V to 28 V DC supply and matched externally with microstrip or lumped elements. When designing with this device, ensure the bias sequence supplies gate voltage before drain voltage, provides adequate heat-sinking through the flanged ceramic body, and confirms RF load-pull matching for the chosen modulation format. This page synthesizes distributor pricing, drop-in alternatives, and practical RF design notes not collected together in any single datasheet or catalog page.
MRF19085LR3 - 90W, 1930-1990 MHz RF Power LDMOS | NXP
The NXP MRF19085LR3 is a 90 W, 26 V lateral N-channel enhancement-mode RF power MOSFET designed for 1930-1990 MHz PCN/PCS base station applications. Housed in the NI-780H-2L ceramic package (CASE 465-06, STYLE 1), it delivers 13 dB gain, 18 W Pout (typical 2-carrier N-CDMA) with IDQ = 850 mA, and is rated for 65 V drain breakdown. This part is part of the well-established NXP/Freescale MRF19085 RF power MOSFET family used in cellular infrastructure worldwide. An RF power LDMOS transistor is a laterally-diffused MOSFET optimized for high-frequency, high-power amplification. Unlike small-signal MOSFETs, RF power LDMOS parts integrate a high breakdown drain region, low parasitic capacitances, and a thermally efficient ceramic/overmolded package to dissipate 100 W+ from a single die. They sit at the top of the RF amplifier hierarchy: RF amplifier -> power amplifier (PA) -> RF power transistor -> LDMOS. The MRF19085LR3 specifically targets the 1.93-1.99 GHz cellular band that became the foundation of 3G (UMTS/CDMA2000) base station PAs. Key features include 90 W Pout capability, 13 dB power gain at 1.93-1.99 GHz, 26 V nominal VDD operation, 850 mA quiescent current recommendation, and inherent robustness for multicarrier amplifier applications including TDMA, CDMA, and W-CDMA. The lateral N-channel structure also provides excellent linearity and high breakdown voltage headroom for OFDM waveforms. The device's lateral architecture uses an N-channel enhancement-mode LDMOS process with a drain-source breakdown of 65 V, providing comfortable headroom above the 26 V VDD rail. This makes it tolerant of VSWR mismatches typical at the antenna interface of base station PAs, where reflected power can momentarily double the drain voltage swing. Typical applications include 3G/UMTS macro-cell base station power amplifiers, PCS/Cellular band repeaters, multicarrier driver stages, and TD-SCDMA infrastructure. The wide bandwidth also accommodates commercial 2-carrier N-CDMA test conditions with adjacent-channel power ratio (ACPR) optimized for cellular mask compliance. When designing with the MRF19085LR3, the gate bias must be sequenced with the drain supply to prevent parametric shifts; IDQ should be set to 850 mA per the datasheet's N-CDMA test condition for optimal linearity. The exposed ceramic flange (NI-780H-2L) must be soldered to a copper heatsink with adequate thermal mass to keep Tj below 200 C at full Pout. This page consolidates distributor pricing, NI-780H-2L drop-in alternatives, and practical PA design notes that go beyond the manufacturer datasheet to help cellular-infrastructure engineers make sourcing and substitution decisions quickly.
MRF19125R5 - 24W RF Power LDMOS 1.93GHz NI-880 | NXP
The NXP (formerly Motorola/Freescale) MRF19125R5 is a 24 W RF power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for use in the 1.93 GHz frequency band, housed in the NI-880 ceramic package. Built on NXP's sub-micron LDMOS process, the technology features 65 V drain voltage rating, 26 V typical operating test condition, 13.5 dB power gain, and 24 W output power in a single-ended configuration optimized for base-station amplifier stages. An RF power LDMOS transistor is a specialized power MOSFET built on a laterally diffused metal-oxide-silicon process that delivers high RF power with high gain and efficiency at microwave and UHF frequencies. It sits in the power transistor hierarchy as: LDMOS -> RF power transistor -> RF MOSFET -> discrete semiconductor -> power amplifier building block. LDMOS has become the dominant technology for cellular base-station power amplifiers because it offers an excellent trade-off between power density, linearity, gain, and cost at frequencies up to 3.8 GHz. Key features of the MRF19125R5 include 1.3 A quiescent/test current at 26 V, 65 V maximum drain-source voltage rating, integrated ESD protection, and NXP's Ni-880 ceramic flange package with low thermal resistance for high-power RF operation. The part is part of NXP's MRF19125 family targeted at 1.93 GHz industrial-scientific-medical (ISM) and PCS/DCS infrastructure amplifier designs where high gain and ruggedness are required. Architecturally, the device uses NXP's sub-micron LDMOS process, providing a high breakdown voltage that allows operation at 26-28 V while maintaining good linearity and high drain efficiency (typically 50%+ at P1dB). The NI-880 ceramic package offers a low Rth(j-c) thermal path, which is essential for dissipating the substantial heat generated in continuous-wave or high-duty-cycle base-station service. Typical applications include 1.93 GHz industrial-scientific-medical (ISM) band amplifiers, PCS/DCS base-station power amplifier driver stages, and military/aerospace RF amplification. The MRF19125R5 is a matched-device variant (R5 designation) tuned for use with NXP's reference amplifier circuits at the 1.93 GHz operating point. When designing with this device, ensure proper impedance matching at both input and output to achieve rated gain and efficiency, and provide adequate heatsinking via the ceramic flange mount. Bias sequencing should follow NXP's recommendations to avoid thermal runaway. This page synthesizes distributor stock data, parametric drop-in alternatives in the same NI-880 footprint, and practical design notes not found in the manufacturer datasheet alone.
MRF1K50HR5178 - 1500W RF LDMOS Transistor, 1.8-500 MHz, 50V | NXP
The NXP MRF1K50HR5178 is a high-ruggedness N-channel enhancement-mode lateral MOSFET designed as an RF power LDMOS transistor delivering 1500 W CW output power across the 1.8-500 MHz frequency range from a 50 V supply. Housed in the NI-1230H ceramic package, this transistor belongs to NXP's Airfast RF power family and is specifically engineered for harsh industrial, scientific, medical (ISM), broadcast, sub-GHz aerospace, and mobile radio applications. Key specifications include a 50 V drain-source voltage rating, typical CW output power of 1500 W at very high VSWR tolerance, and high gain across the entire 1.8-500 MHz band. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET optimized for radio-frequency amplification. Compared to standard power MOSFETs, RF LDMOS devices are designed with low parasitic capacitance and high gain at RF frequencies, making them the dominant technology for high-power RF amplification in the HF, VHF, and UHF bands. LDMOS devices typically integrate electrostatic discharge (ESD) protection and are built on ceramic flanged packages for efficient thermal dissipation. The MRF1K50HR5178 is built to withstand severe mismatch conditions (high VSWR) without performance degradation, which is critical in industrial heating, plasma generation, and broadcast transmitter environments where load impedance can vary dramatically. Distinguishing features of the MRF1K50HR5178 include its very high VSWR ruggedness for industrial generator loads, a single-package CW solution at 1500 W, and an unmatched input/output design that allows broad frequency reuse from 1.8 MHz through 500 MHz. The ceramic NI-1230H package provides low thermal resistance for direct mounting to heatsinks or water-cooled cold plates, with the flange serving as the drain electrical connection. Typical applications span CW and pulsed industrial RF generators for plastic welding and plasma excitation, HF/VHF TV and radio broadcast transmitters, sub-GHz aerospace communication links, and mobile radio base station power amplifiers. The wide bandwidth also makes it well suited for particle accelerator drivers and scientific instrumentation. When designing with this part, ensure a sufficient 50 V DC supply and a low-impedance thermal mounting surface. Use NXP's reference PCB layout and matching network examples from the datasheet to achieve optimal efficiency and gain in the target band. Decoupling of the drain supply close to the package flange is critical for stable operation. The MRF1K50HR5178 is currently cataloged under Rochester Electronics for legacy Freescale/NXP inventory; refer to the original NXP datasheet for parametric limits. For applications demanding alternative frequencies or lower power levels within the Airfast family, designers should consult related Airfast datasheets. This page synthesizes real-time distributor pricing, parametric specifications, and practical design guidance for engineers integrating the MRF1K50HR5178 into RF power amplifier systems.
MRF21010LR1 - 10W, 28V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF21010LR1 is a 10 W lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110-2170 MHz band. Housed in the NI-360 ceramic package, this RF MOSFET delivers 13.5 dB typical power gain and is engineered for high linearity, multicarrier amplifier (MCPA) operation. The lateral device structure combines broadband performance with the ruggedness required for Class AB base-station power amplifiers. An RF power MOSFET is a specialized transistor optimized for radio-frequency amplification, sitting in the power-management hierarchy between small-signal RF FETs and conventional power MOSFETs. Lateral devices such as the MRF21010LR1 use a planar, laterally-diffused drain-source structure, which minimizes parasitic capacitances and enables operation well into the multi-GHz range, unlike vertical DMOS parts that are bandwidth-limited by output capacitance. In system terms, the MRF21010LR1 belongs to NXP's heritage Motorola RF MOSFET line, now a foundational part of the cellular-infrastructure power amplifier (PA) chain. Key specifications include a 28 V typical drain-source operating voltage, 10 W CW output power capability, and a 100 mA quiescent drain current at bias. The NI-360 ceramic package provides a low thermal resistance path to the system heat sink and supports the high peak junction temperatures encountered in W-CDMA bursts. Internal matching simplifies board-level integration into 50 Ω amplifier circuits. The part is fabricated on a high-voltage lateral MOSFET process, achieving simultaneously high breakdown, low feedback capacitance, and excellent intermodulation performance. Its broadband response also makes it suitable for FM, TDMA, CDMA, and multicarrier amplifier applications beyond pure W-CDMA. Typical applications include W-CDMA base-station power amplifiers, PCN/PCS/cellular radio front ends, WLL (wireless local loop) transmitter chains, and multicarrier driver stages. The same die is offered as MRF21010LSR1 in a different flange-mount variant for chassis-mount designs. When designing with the MRF21010LR1, ensure the 50 Ω input/output matching networks are realized on the lowest-loss substrate available (Rogers RO4003 or equivalent), and that the drain bias feed is well bypassed with a quarter-wave stub to suppress out-of-band gain peaking. This page synthesizes distributor pricing, drop-in alternatives, and practical RF design notes not found in the raw datasheet PDF, enabling rapid part evaluation for cellular PA and broadband driver designs.
MRF21030LR3 - 30W, 28V LDMOS RF MOSFET | NXP | 2.0-2.2 GHz
The NXP MRF21030LR3 is a 30 W, 28 V lateral N-channel enhancement-mode RF power MOSFET designed for PCN and PCS base-station applications across the 2000-2200 MHz band. Housed in the NI-400 ceramic package (CASE 465E-04, STYLE 1), the device delivers 13 dB typical power gain at 2.14 GHz with 30 W CW output, making it a workhorse driver/final stage for cellular-infrastructure amplifiers originally released by Motorola Semiconductor and now serviced through NXP's RF product line. An RF LDMOS (Laterally Diffused MOS) transistor is a specialized power MOSFET architecture optimized for high-frequency, high-power operation. Unlike conventional vertical MOSFETs, LDMOS places the drift region laterally under the gate, achieving low parasitic capacitance and high breakdown voltage in a single die. In the cellular base-station hierarchy, LDMOS parts bridge the gap between small-signal GaAs devices (used in receive paths) and GaN-on-SiC HEMTs (used in newer high-efficiency Doherty final stages), giving designers a mature, cost-effective path to 30 W Class-AB amplification. Key electrical features include 30 W typical output power at 1 dB compression, 13 dB power gain at 2.14 GHz, drain efficiency in the 50-55% range under multi-carrier W-CDMA drive, and 28 V nominal drain bias with 65 V maximum drain-source rating. Built-in ESD protection and a thermally enhanced ceramic NI-400 flange reduce reliability risk in fan-cooled or natural-convection base-station chassis. The part is characterized for Class-AB linear operation and has been used historically as both driver and final stage in 2 GHz WLL, PCS, and micro-cellular repeater designs. The MRF21030LR3 silicon uses NXP's third-generation LDMOS process with a gold metallization stack for extended MTBF at elevated junction temperatures. Internal gate-source Zener diodes provide ESD protection to 250 V HBM, eliminating the need for external protection circuitry in modular PA designs. The matched input and partial output matching required for the NI-400 footprint is documented in the NXP application note that accompanies the data sheet. Typical applications include W-CDMA/CDMA/TDMA driver and final amplifiers for 2.1 GHz band cellular base stations, multi-carrier power amplifiers for PCS microcells, WiMAX/WLL subscriber and base-station transmitters in the 2.0-2.2 GHz window, and Class-AB linear amplifiers for public-safety and amateur-radio links above 2 meters. The device remains a popular choice for legacy refreshes of existing Motorola-era hardware. When designing with this part, ensure the drain supply rail is well-decoupled with a 10 uF plus 100 nF ceramic combination and a 4:1 or higher impedance transformer ratio for the output match. Maintain case temperature below 200 C in continuous operation; the NI-400 flange should be bonded to a copper or aluminum heat spreader with thermal grease. Avoid exceeding the 65 V absolute maximum drain-source rating, which can be reached under load-mismatch (VSWR > 10:1) conditions if the circulator or isolator protection fails. This page synthesizes distributor pricing, drop-in alternatives from the MRF21010/21045/MRF5P21180 families, and practical thermal and PCB-layout design notes not found in the manufacturer datasheet alone.
MRF21030LR5 - 30W LDMOS RF MOSFET 2.14GHz PCN/PCS | NXP
The NXP MRF21030LR5 is a 30 W RF power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for class AB linear amplification in PCN (Personal Communication Network) and PCS (Personal Communications Service) base-station transmitters, with operation from frequencies up to 2200 MHz and a factory-characterized test point of 2.14 GHz. Packaged in the NI-400 ceramic flange package with 28 V typical operating voltage, the device delivers 13 dB power gain at 250 mA quiescent bias and 250 mA bias current at 28 V test condition, making it a workhorse for cellular infrastructure during the GSM/EDGE/TDMA/CDMA era. An RF power LDMOS transistor is a specialized high-frequency power MOSFET fabricated using a laterally diffused metal-oxide-semiconductor process. Unlike small-signal RF MOSFETs used in low-noise amplifiers, RF power LDMOS devices combine high breakdown voltage, high gain, and excellent thermal performance on a ceramic flange substrate, enabling them to deliver tens of watts of continuous RF power with high linearity in base-station power amplifiers. The MRF21030LR5 sits in NXP's (formerly Freescale's) MRF21030L RF power transistor family as a single-ended device optimized for narrowband and multicarrier amplifier applications. Key electrical characteristics per the NXP datasheet include 13 dB minimum power gain at 2.14 GHz, 30 W typical output power, 65 V drain-source voltage rating, and 250 mA typical quiescent current at 28 V test. The lateral MOSFET structure provides inherent thermal stability and high ruggedness into VSWR mismatched loads. The LDMOS construction significantly reduces feedback capacitance (Cgd/Cds) compared to vertical MOSFETs, simplifying broadband matching network design for class AB linear amplifiers. Typical applications include 2G/3G cellular base-station power amplifiers (PCN/PCS bands), multicarrier amplifier linear drivers, FM broadcast transmitters, TDMA and CDMA driver/final stages, and general-purpose class AB RF amplification up to 2.2 GHz. The NI-400 ceramic flange package with its integrated mounting flange also supports tab-mounted heatsink attachment for high continuous-duty-cycle operation. When designing with the MRF21030LR5, observe the maximum drain voltage derating guidelines at elevated temperatures, provide a minimum PCB copper ground-pour area under the ceramic flange, and bias the gate with a regulated negative supply for accurate quiescent current setting. The matched input network shown in the NXP reference design reduces gain ripple across the 1.8-2.2 GHz operating band. This page synthesizes distributor pricing, same-package drop-in alternatives within the NXP MRF21030L family, and practical thermal/biasing design notes not consolidated in the manufacturer datasheet. Reference designators for matching networks follow the NXP evaluation board schematic.
MRF21060R3 - 60W, 2.1GHz RF Power MOSFET | Freescale Semiconductor
The Freescale Semiconductor (formerly Motorola) MRF21060R3 is a 60 W lateral N-channel RF power MOSFET designed for PCN and PCS base station applications in the 2.1 to 2.2 GHz band. Housed in the NI-780H-2L ceramic package (CASE 465-06, STYLE 1), it operates from a 28 V supply and delivers typical W-CDMA performance at 2140 MHz. The device uses Freescale's lateral MOSFET structure optimized for high gain (12.5 dB typical) and ruggedness in multicarrier amplifier service. RF power MOSFETs are specialized transistors built to deliver high RF output power at microwave frequencies with high gain and efficiency. Lateral N-channel MOSFETs place the source, gate, and drain laterally on the silicon surface, which reduces parasitic capacitances compared to vertical DMOS structures and yields higher gain at UHF and microwave frequencies. The MRF21060R3 belongs to the RF power transistor hierarchy: transistor -> MOSFET -> RF MOSFET -> lateral N-channel RF power MOSFET -> semiconductor device. Key specifications include 60 W CW output power, 28 V drain supply, 500 mA quiescent drain current, 12.5 dB power gain at 2.1 GHz, and operation across 2.1 to 2.2 GHz. The device is designed for W-CDMA, CDMA, TDMA, GSM, and multicarrier amplifier applications. Its lateral geometry provides consistent gain-bandwidth product across the 2.1 to 2.2 GHz operating window, and internal matching networks simplify PCB integration in push-pull or single-ended final stages. The MRF21060R3 is built for base station power stages where linearity and ruggedness are equally important. Freescale's laterally-diffused MOSFET (LDMOS) variant of this family supports high peak-to-average ratios required by modern digital modulation schemes. The NI-780H package offers a ceramic flange with a low thermal resistance path, enabling reliable 60 W CW operation at typical cellular base station duty cycles. Typical applications include W-CDMA/UMTS base station final stages, PCS/personal communications network power amplifiers, multicarrier GSM/EDGE amplifier modules, and 2.1-2.2 GHz RF power blocks for repeaters and small-cell infrastructure. The part also serves in defense and aerospace telemetry links operating within the same band. When designing with this part, ensure the device is biased into Class AB at the rated 500 mA quiescent current for the best linearity/efficiency trade-off. The ceramic flange requires a properly torqued heatsink with thermal compound to maintain junction temperature below the rated 200 C maximum. This page synthesizes distributor availability, drop-in alternatives drawn from the same NI-780 family, and applied design notes that go beyond the bare datasheet to accelerate your base-station PA design.
MRF21085R3 - 90W 28V W-CDMA RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF21085R3 is a 90 W lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110–2170 MHz band. Housed in the NI-780H-2L ceramic package, this RF power field effect transistor provides 13.6 dB typical gain at 2170 MHz from a 28 V supply and is rated for 90 W P1dB-class output power, making it suitable for TDMA, CDMA, and multicarrier amplifier applications in modern cellular infrastructure. RF power MOSFETs are specialized lateral metal-oxide-semiconductor field effect transistors optimized for high-frequency, high-power amplification. Unlike small-signal MOSFETs, RF power MOSFETs use a lateral geometry on a high-resistivity silicon substrate to minimize parasitic capacitance and maximize breakdown voltage. They sit within a broader product hierarchy of power management semiconductors, which spans linear regulators, DC-DC converters, and discrete RF transistors. The MRF21085R3 family specifically targets the 2.1 GHz UMTS/W-CDMA downlink band, a hypernym class that also includes similar LDMOS devices from competitors. Key features include 90 W CW output power capability, 13.6 dB typical power gain, 28 V drain supply operation, and high drain efficiency optimized for W-CDMA modulation. The device's lateral construction on a thermally optimized ceramic flange carrier (NI-780H-2L) enables direct mounting to a heatsink or system chassis for thermal dissipation. Internal matching simplifies external PCB design and reduces component count in the final amplifier circuit. The MRF21085R3 architecture is based on NXP's (formerly Freescale, formerly Motorola Semiconductor) high-voltage lateral MOSFET process. This process delivers high ruggedness into mismatched loads, low memory effects for wideband signals such as W-CDMA, and excellent thermal stability under continuous-wave operation. The device's gold metallization and hermetic ceramic package provide long-term reliability in base-station environments. Typical applications include W-CDMA base station power amplifiers in the 2110–2170 MHz UMTS band, TDMA and CDMA driver or final-stage amplifiers, and multicarrier power amplifiers for cellular repeaters. The 90 W output capability allows the device to be used as the final stage in macro-cell base stations or as a driver in higher-power amplifier chains. When designing with the MRF21085R3, ensure proper RF board layout with controlled-impedance transmission lines to the gate and drain. The flange must be properly mounted to a heatsink with adequate thermal compound to maintain junction temperature within safe limits. Bias sequencing and proper matching network design per NXP application notes are critical for achieving rated linearity and efficiency in W-CDMA service. This page synthesizes distributor stock levels, parametric drop-in alternatives, and practical RF amplifier design notes that complement the official NXP datasheet for engineers evaluating 90 W 2.1 GHz RF MOSFET options.
MRF21125R3 - 125W, 28V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF21125R3 is a 125 W lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110–2170 MHz band. It operates from a 28 V rail, delivers 13 dB of typical power gain at 2.11–2.17 GHz, and is housed in the NI-880H-2L ceramic flange-mount package (CASE 465B-03). The device is built on a lateral DMOS process that combines high breakdown voltage (65 V) with low parasitic capacitance, making it well-suited to multicarrier, TDMA, and CDMA amplifier topologies. A RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver large amounts of RF energy at high frequencies. Within the wireless transmitter hierarchy, the device sits at the final PA (power amplifier) stage, after the driver amplifier and before the bandpass filter and antenna. Compared with earlier bipolar RF transistors, lateral MOSFETs offer higher gain, better thermal stability, and easier broadband matching, which is why they dominate modern cellular base-station PAs. Key features of the MRF21125R3 include a typical quiescent current of 1600 mA for Class AB operation, a maximum dissipated power of 330 W, an absolute maximum junction temperature of 200 °C, and a two-terminal flange configuration. The lateral N-channel architecture supports stable operation across wide duty cycles and is suitable for both continuous-wave and pulsed waveforms used in 3G multi-carrier environments. From a system standpoint, the MRF21125R3 is typically biased from a regulated 28 V supply and matched with microstrip or stripline networks on a low-loss PCB such as Rogers RO4003C. Designers pair it with a dedicated gate driver and a circulator/isolator to protect the device from VSWR excursions. The ceramic NI-880 package provides a low thermal resistance path to the heatsink, which is essential because at 125 W RF output and ~50% efficiency roughly 125 W is dissipated as heat. Typical applications include W-CDMA macro-cell base-station power amplifiers, PCS/cellular infrastructure, multicarrier TDMA/CDMA line-ups, and WLL (wireless local loop) transceivers. It can also serve as a final stage in PCN/cellular radio amplifiers when biased in Class AB. When designing with this device, ensure the heatsink is sized for at least 200 W continuous dissipation and that the input/output matching networks are tuned for the 2110–2170 MHz band. Always operate below the 65 V drain breakdown and respect the 200 °C junction limit to maintain long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet for engineers evaluating the MRF21125R3.
MRF24300NR3 - 300W LDMOS RF MOSFET, 2450 MHz | NXP Semiconductors
The NXP Semiconductors MRF24300NR3 is an N-channel enhancement-mode laterally-diffused metal-oxide-semiconductor (LDMOS) RF power transistor rated for 300 W continuous wave output at 2450 MHz from a 32 V supply, packaged in the ceramic OM-780-2 (SOT1823) flange-mount case. The device targets 2400-2500 MHz industrial, scientific, and medical (ISM) bands, providing 13.1 dB typical power gain at 2450 MHz and is qualified for CW, pulse, and linear operation, allowing amplifier designers to standardize one transistor across industrial heating, plasma generation, and RF lighting load profiles. An LDMOS transistor is a laterally-diffused MOSFET variant engineered for high-power RF amplification. LDMOS sits in the broader semiconductor device hierarchy of MOSFET > LDMOS > RF power transistor > discrete semiconductor, and it dominates the high-power RF amplifier market because of its high breakdown voltage, excellent thermal conductivity, and tolerance of load mismatch. These traits make LDMOS the workhorse for cellular base stations, broadcast transmitters, and now ISM-class 2.45 GHz industrial generators, where the MRF24300NR3 directly replaces less reliable 2.45 GHz magnetrons. Key specifications of the MRF24300NR3 include a 32 V typical drain-source operating voltage, 300 W CW output power at 2450 MHz, 13.1 dB typical gain, an N-channel enhancement-mode gate structure requiring standard positive biasing, and ceramic OM-780-2 packaging with a metal flange for direct heatsink mounting. The OM-780-2 (SOT1823) package is a hermetic two-lead flange-mount case designed for screw-down thermal mounting to the amplifier chassis, giving low thermal resistance for sustained 300 W CW operation. Operating junction temperature range spans -65C to +200C, supporting industrial and aerospace-qualified amplifier modules. Internally the MRF24300NR3 uses NXP's later-generation LDMOS die architecture that integrates an ESD-protected gate, an integral body diode for reverse-bias survivability, and a source-connected metal flange that doubles as the RF ground reference. The die is soldered into a ceramic/air-cavity package so internal parasitic inductance stays low, supporting high efficiency across the 2.4-2.5 GHz ISM band. The transistor is rated to handle severe load mismatch typical in industrial heating cavities, where the antenna equivalent impedance can vary widely with the material being heated. Typical applications for the MRF24300NR3 include 2.45 GHz industrial microwave heating generators, RF plasma excitation sources for semiconductor etch equipment, continuous-wave (CW) RF energy delivery systems for food processing and drying, microwave-oven-class magnetrons replacement assemblies, medical RF ablation and diathermy equipment, and laboratory RF power amplifiers in the 2400-2500 MHz band. Designers favor this part when a single robust LDMOS can replace an aging magnetron and deliver longer MTBF and easier analog modulation. The wide CW/pulse/linear capability means one transistor can serve multiple amplifier topologies across a product family. When designing around the MRF24300NR3, ensure the heatsink thermal design holds the flange case temperature below the 200C junction maximum under CW 300 W drive and that the drain bias network uses a 32 V regulated supply with adequate inrush limiting. A well-designed broadband CW amplifier at 2450 MHz typically achieves 55-60% drain efficiency with this device, and a 4 dB input drive at 2450 MHz produces about 300 W saturated output into a 50 ohm load. This XAIPART page synthesizes distributor availability from Mouser, DigiKey, and Octopart, the NXP manufacturer datasheet, and a curated drop-in alternatives list drawn from the same 2.45 GHz LDMOS family, giving engineers a single source for verified electrical, thermal, package, and supply-chain detail not always consolidated in the raw manufacturer datasheet.
MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP
The NXP MRF377HR3 is a 45 W, 32 V lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications spanning 470 to 860 MHz. Housed in the NI-860C3 ceramic package and internally matched for push-pull operation, it delivers 18.2 dB typical power gain at 860 MHz and is characterized with series equivalent large-signal impedance parameters to simplify transmitter design. The device targets large-signal common-source amplifier stages in 32 V digital television transmitter equipment and similar UHF broadband power applications. An RF power MOSFET is a discrete transistor optimized to deliver significant continuous or pulsed RF output power at high frequencies, typically used as the final amplification stage in a transmitter chain. Lateral N-channel enhancement-mode MOSFETs combine a low-loss silicon die structure with a high-impedance gate, enabling high gain and broadband matching in a single die. Within the wider semiconductor taxonomy, RF power MOSFETs belong to the discrete power transistor family (MOSFET > transistor > discrete semiconductor), distinct from small-signal MOSFETs used for switching or analog signal processing. Their high drain voltage tolerance (32 V or more) and matched input/output impedances make them the workhorse of UHF/VHF broadcast, industrial RF heating, and avionics transmitter designs. The MRF377HR3 offers broadband performance across the entire 470-860 MHz UHF television band, eliminating band-specific matching networks and reducing tuner count in multi-band transmitters. Its 45 W CW power capability at 32 V provides ample margin for DVB-T, ATSC, and ISDB-T transmitter outputs, while its internally matched push-pull configuration halves the matching complexity for the designer. The 18.2 dB typical gain reduces driver-stage gain requirements, allowing simpler and less expensive exciter chains. Push-pull operation also inherently suppresses even-order harmonics, improving spectral purity without additional filtering. Typical deployments include UHF digital television transmitters in the 470-862 MHz broadcast band, broadband industrial RF heating and plasma generation systems, and avionics/PMR linear amplifier stages where broadband matching is valued. The device's combination of high gain and broadband response also suits scientific and medical RF applications such as MRI RF amplifiers and particle accelerator drivers operating in the UHF range. Designers should note the device is rated for push-pull operation only - a single-ended bias configuration will not deliver the rated 45 W output and may damage the die. Adequate RF Choke selection, low-loss transmission-line matching, and a robust 32 V DC supply with sub-millisecond overcurrent protection are essential to keep junction temperature within the 200 C maximum rating. The NI-860C3 ceramic flange must be bolted to a heatsink with the specified torque and thermal compound to maintain the rated thermal resistance. This page consolidates manufacturer datasheet figures, distributor pricing, drop-in alternatives, and practical amplifier-design guidance not collated in a single location on the NXP datasheet, providing an actionable reference for UHF power-amplifier engineers.
MRF5P21045NR1 - 10W W-CDMA LDMOS RF Power Transistor | NXP
The NXP MRF5P21045NR1 is a dual-path, N-channel enhancement-mode lateral MOSFET RF power transistor designed for W-CDMA base station applications from 2110 to 2170 MHz, delivering 10 W average output power at 28 V with 14.5 dB gain in a TO-270 WB-4 (overmolded plastic) package. It is also qualified for TDMA, CDMA, and multicarrier amplifier applications. RF power transistors in the LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) family are specialized MOSFETs optimized for high-frequency, high-power amplification in the 1 MHz to 4 GHz range. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and high gain/density, sitting within the broader taxonomy of RF power transistors → RF MOSFETs → LDMOS → discrete semiconductors. The MRF5P21045NR1 features a 65 V drain-source voltage rating, 14.5 dB typical power gain at 2.14 GHz, and integrated dual-path topology that supports Doherty, quadrature, single-ended, and push-pull amplifier configurations. Internal matching and overmolded packaging minimize parasitic losses and provide stable thermal performance. The device uses NXP's high-voltage HV5 LDMOS process technology, which provides high ruggedness into mismatched loads, making it tolerant of antenna VSWR variations common in field deployments. The 28 V supply rail aligns with mainstream macro-cell base-station architecture, simplifying power supply design. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, Doherty final-stage amplifiers for high-efficiency operation, multi-carrier driver stages, and push-pull amplifier modules for wireless infrastructure. The 2110-2170 MHz band covers the UMTS Band I downlink. For thermal management, the TO-270 plastic package requires a properly soldered PCB land pattern and adequate copper thermal vias to dissipate continuous RF and DC losses. Designers should follow NXP's application note AN1907 for PCB layout and thermal via patterns to ensure long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on standalone manufacturer datasheets or distributor catalog pages.
MRF5P21180HR5 - 2170MHz, 38W W-CDMA RF LDMOS | NXP
The NXP MRF5P21180HR5 is a 2170 MHz, 38 W W-CDMA lateral N-channel RF power MOSFET housed in the NI-1230 (5-pin) ceramic package and built on NXP's rugged Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. It is designed for W-CDMA base-station applications in the 2110-2170 MHz band and is characterized at 28 V with 1.6 A quiescent current at a 14 dB power gain, making it a workhorse RF final-stage device for 2-carrier W-CDMA driver and output stages. An RF power LDMOS transistor is a specialized power MOSFET optimized for high-frequency, high-power operation in the 1-3 GHz range, where it dominates macro-cell base-station power amplifiers because of its high breakdown voltage, excellent linearity, and ease of impedance matching. Within the semiconductor taxonomy, this device sits at: LDMOS -> RF MOSFET -> power MOSFET -> discrete semiconductor. The MRF5P21180HR5 is positioned for Class-AB amplification of digitally modulated carriers, including TDMA, CDMA, and multicarrier W-CDMA waveforms. Key differentiating features include 38 W average output power (P1dB-class for two-carrier W-CDMA), 14 dB power gain at 2.16 GHz, an internal ESD protection network, and a thermally enhanced NI-1230 ceramic package with a bolt-down flange for direct heatsink mounting. The device is rated for continuous-wave operation at 28 V VDD, with operating voltage up to 65 V transient on the drain. The internal LDMOS die architecture places the source connections on the package flange to minimize common-source inductance, which directly improves broadband stability and gain at 2 GHz. NXP's 5th-generation LDMOS process integrates ESD diodes and a gate-source zener protection network on-die so the device tolerates routine handling and brief over-voltage events without external protection components. The matched input and output impedances are documented in the manufacturer datasheet for Doherty and single-ended PA topologies. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, LTE Band 7 (uplink 2500-2690 MHz is a stretching use case, primary 2110-2170 MHz), TDMA and CDMA driver stages, multicarrier amplifier (MCPA) final stages, and Class-AB pulsed-RF amplifiers for defense radar and avionics. The 38 W envelope supports small-cell and micro-cell final stages as well as repeater PA lineups. When designing with this part, provide 50 ohm microstrip or stripline transitions to the input gate and output drain pads, place 100-1000 pF decoupling capacitors within 5 mm of the drain pad, and mount the flange to a copper or aluminum heatsink with thermal grease. Always run the gate at a negative bias (typically -3 V) for Class-AB operation, and use a gate-decay sequence to prevent thermal runaway during high-CW operation. This page synthesizes distributor pricing snapshots, drop-in alternates from the same NXP RF power family, and practical thermal/PCB guidance not collated in the manufacturer datasheet alone.
MRF5P21240HR6 - 52W 2110-2170 MHz W-CDMA RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF5P21240HR6 is a 52 W average, 28 V lateral N-channel enhancement-mode RF power MOSFET designed for W-CDMA base station applications in the 2110 to 2170 MHz band. Housed in the NI-1230 ceramic package (commonly referenced as the HR6 form factor), it delivers 13 dB power gain with a 28 V supply and supports 2-carrier W-CDMA at 52 W average output. The device is well suited for Class AB operation in PCN-PCS/cellular radio and WLL infrastructure. RF power transistors such as the MRF5P21240HR6 sit within the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family - a subclass of power MOSFETs designed to combine high RF gain and ruggedness with reasonable cost. Within the broader taxonomy they are power transistors -> discrete semiconductors -> RF power devices. LDMOS has become the dominant technology for sub-3 GHz base-station PA stages because of its high breakdown voltage, excellent linearity gain in swept-back-off RF conditions, and ability to handle high peak-to-average ratios typical of multicarrier W-CDMA signals. Key features include a minimum drain-source breakdown of 65 V (giving ample headroom above the 28 V operating rail), 603 W absolute maximum power dissipation, a common-source dual-element configuration, and surface-mount ceramic packaging. The device's 13 dB gain at 2.11 GHz and its high-efficiency performance under 2-carrier W-CDMA drive conditions make it a workhorse final-stage transistor for UMTS Band I (uplink/downlink) power amplifiers. Architecturally, the MRF5P21240HR6 is built on NXP's 7th-generation (Gen7) high-voltage LDMOS process, which places two dies inside a single ceramic NI-1230 housing to achieve the 52 W average output level. Internally matched on the input and partially matched on the output for the 2110-2170 MHz band, the device is biased at IDQ = 2200 mA with VDD = 28 V to deliver its rated linear output power. Typical applications include W-CDMA/UMTS base-station PAs (Band I), 2-carrier multi-carrier amplifier bricks, and cellular repeaters. Designers choose this part when they need proven LDMOS ruggedness in surface-mount ceramic packaging for high-power macro-cell or micro-cell infrastructure. A practical design tip: the HR6 suffix denotes a lower-thermal-resistance ceramic package compared to the older MRF5P21240R6. When migrating from R6 to HR6 the PCB land pattern is identical, so existing base-station layouts can be reused without rework. Always verify load-pull impedance at your specific bias and frequency before finalizing the output matching network.