MOSFET
제품 (1294)
NVD5117PLT4G-VF01 - 60V P-Channel MOSFET, 61A, DPAK | onsemi
The onsemi NVD5117PLT4G-VF01 is a single P-Channel power MOSFET rated at -60 V VDS, -61 A continuous drain current (Tc), and 16 mΩ on-resistance, supplied in a surface-mount DPAK (TO-252) package. It is an automotive-grade, AEC-Q101 qualified device, and the -VF01 suffix denotes a custom factory-supplied variant of the NVD5117PL family tailored for specific OEM requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant per the onsemi datasheet. A P-Channel MOSFET is a type of field-effect transistor in which the channel is doped to conduct when the gate is pulled below the source potential. P-Channel parts simplify high-side load switching in 12 V automotive and industrial systems because driving a low-side load switch with a P-Channel device only requires the gate to be pulled near ground to turn the device on, eliminating the need for a charge pump or bootstrap circuit. The NVD5117PLT4G-VF01 belongs to the power MOSFET -> discrete semiconductor -> semiconductor component taxonomy, and specifically targets the low/medium-voltage P-Channel segment dominated by 40 V to 100 V parts in DPAK/D2PAK packages. Key specifications of the NVD5117PLT4G-VF01 include -60 V drain-to-source breakdown voltage, -61 A continuous drain current at case temperature, 16 mΩ typical R_DS(on) at V_GS = -10 V, 4.1 W power dissipation at TA, and 118 W power dissipation at Tc. The -VF01 suffix is a factory special part number; users should refer to the base NVD5117PL datasheet for guaranteed electrical characteristics. The device uses onsemi's proprietary PowerTrench process technology, which minimizes conduction loss and improves switching efficiency. Typical applications include automotive load switching, high-side switching in 12 V systems, motor control, power management in industrial automation, battery protection circuits, and DC-DC converter high-side switches. The automotive-grade qualification makes the part especially suitable for body control modules, ECU power distribution, and lighting drivers where AEC-Q101 compliance is required by the OEM. When designing with this MOSFET, ensure that the gate-source voltage stays within the ±20 V absolute maximum rating to prevent oxide damage. For high-current pulsed loads, verify the safe operating area against the datasheet SOA curves. Use a gate resistor of 10 Ω to 100 Ω to control switching transients and minimize ringing on the gate node.
NVHL072N120SC1 - 1200V SiC MOSFET, Low RDS(on) | onsemi
The onsemi NVHL072N120SC1 is an N-channel EliteSiC silicon carbide (SiC) power MOSFET rated at 1200 V drain-source voltage with a low typical on-resistance of approximately 72 mohm, housed in a through-hole TO-247-3 package. It belongs to onsemi's M1-planar-technology EliteSiC MOSFET family, which targets high-efficiency, high-voltage power conversion. A silicon carbide MOSFET is a type of power transistor that uses a wide-bandgap semiconductor instead of silicon. The wider bandgap (~3.2 eV vs 1.1 eV for silicon) allows the device to block higher voltages, switch faster, and achieve lower specific on-resistance than comparable silicon superjunction or IGBT devices. Within the power semiconductor hierarchy, the SiC MOSFET sits alongside the silicon MOSFET and IGBT as a switch for power conversion, typically driven by a dedicated gate driver IC. Key features of the NVHL072N120SC1 family include a very low typical RDS(on), ultra-low total gate charge (approximately 56 nC typ. for the related 80 mohm NVHL080N120SC1), and low effective output capacitance (typ. Coss around 80 pF for the 80 mohm variant), all of which reduce switching losses and enable higher switching frequencies. The device is 100% UIL (unclamped inductive load) tested, is AEC-Q101 qualified and PPAP capable, and is halide-free and RoHS compliant, making it suitable for demanding automotive and industrial environments. Technically, the M1 planar SiC technology delivers superior switching performance and higher reliability compared with silicon devices. The low on-resistance combined with a compact die size yields low gate charge and capacitance; system-level benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced overall system size. These attributes make the part a strong replacement for 1200 V-class IGBTs in hard-switched and resonant topologies. Typical applications include electric vehicle onboard chargers and DC-DC converters, solar string inverters, three-phase motor drives, industrial power supplies, and DC fast-charging infrastructure. In each case, the 1200 V blocking rating supports direct connection to high-voltage DC buses while the low switching charge keeps losses manageable at 20-100 kHz. A key design consideration is gate-drive quality: SiC MOSFETs switch quickly, so a tightly coupled gate loop, an appropriate positive/negative gate drive voltage, and careful kelvin-source or low-inductance layout are essential to control ringing and EMI. [DATA_NEEDED: exact RDS(on), continuous drain current, and power dissipation for the 072 mohm grade - verify against the official NVHL072N120SC1 datasheet] This page synthesizes verified distributor data, same-family drop-in alternatives, and practical SiC design notes not found in the manufacturer datasheet alone.
NVMFS5113PLT1G - -60V P-Ch MOSFET, 14mOhm | onsemi
The onsemi NVMFS5113PLT1G is a -60V, single P-channel power MOSFET housed in a 5-DFN (5x6) package (also designated SO-8FL/8-SOFL) that delivers 14 mOhm typical on-resistance and is rated for continuous drain current of 10 A at TA=25C and 64 A at TC=25C. The device is rated for 3.8 W power dissipation at TA and 150 W at TC, with logic-level VGS(th) suited to 4V/5V microcontroller GPIO drive. According to the onsemi NVMFS5113PL datasheet, it is qualified to AEC-Q101 with PPAP capability thanks to the NVM prefix that signals automotive-grade manufacturing control. A P-channel MOSFET (PMOS) is a type of metal-oxide-semiconductor field-effect transistor in which the channel is formed by holes rather than electrons. In the broader taxonomy, this part is a P-channel enhancement-mode power MOSFET belonging to the low/medium-voltage MOSFET family within discrete semiconductors. PMOS devices are widely used as high-side switches because their source-connected-to-load topology allows the gate to be pulled low relative to the source, removing the need for a charge pump that an N-channel high-side switch would require. Key features of the NVMFS5113PLT1G include an extremely low typical RDS(on) of 14 mOhm at VGS=-10V to minimize conduction losses, a logic-level gate threshold that supports direct drive from 4.5V or 5V logic, and avalanche energy rating for inductive load switching. The 5-DFN (5x6) package with an exposed thermal pad achieves a junction-to-ambient thermal resistance that supports 150 W dissipation with adequate PCB copper area. This part uses trench MOSFET technology with optimized cell pitch, balancing on-resistance, gate charge, and switching speed. The low RDS(on) reduces I^2R conduction loss, which is the chief dissipation source in DC load-switch, hot-swap, and battery-protection applications. The AEC-Q101 qualification and PPAP capability, combined with the NVM prefix, support automotive and industrial designs requiring strict change control. Typical applications include high-side load switching in automotive ECUs, USB Type-C power-path management, motor-direction reversal circuits, and battery protection in 48V mild-hybrid and 12V lead-acid systems. The logic-level VGS(th) also makes it attractive for industrial PLC outputs and consumer hot-swap controllers. When designing with this part, calculate steady-state dissipation as P = I^2 * RDS(on) and confirm that PCB copper area keeps junction temperature below 175C. Source-to-body reverse diode behavior must be considered for inductive loads that can push body-diode current during dead time, often requiring an external Schottky for hard-switched reverse-polarity protection. This page synthesizes onsemi datasheet values, distributor pricing from DigiKey/Mouser/LCSC, AEC-Q101 cross-references, and drop-in alternatives into one engineering-ready reference not found on the manufacturer page alone.
NVMFS5C430NWF - 40V 1.7mΩ 185A N-Channel MOSFET | onsemi
The onsemi NVMFS5C430NWF is a single N-Channel power MOSFET rated at 40 V VDS, 1.7 mΩ typical RDS(on), and 185 A continuous ID, housed in a compact DFN5 (5x6 mm) surface-mount package with wettable flanks for enhanced optical inspection. The device is optimized for low conduction loss and low gate charge to minimize driver losses in high-current switching applications. What is an N-Channel Power MOSFET? An N-Channel MOSFET is a voltage-controlled semiconductor switch whose drain-source channel is populated by electrons when the gate is biased above the threshold. Power MOSFETs belong to the broader family of discrete semiconductors, descending from signal MOSFETs and ancestors of the insulated-gate bipolar transistor (IGBT) for higher voltages. Within onsemi's portfolio, the NVMFS5C430N family targets low- to medium-voltage applications where high current density, low RDS(on), and small PCB footprint are critical design drivers. Key features of the NVMFS5C430NWF include a typical RDS(on) of 1.7 mΩ at VGS=10 V, low total gate charge to reduce switching losses, and a 5x6 mm DFN5 footprint that cuts board area versus traditional DPAK packages. The wettable flank termination enables automatic optical inspection (AOI) of solder joints, a critical feature for automotive-grade quality control. The part is AEC-Q101 qualified and PPAP capable, making it suitable for automotive electronics. It is also RoHS compliant and Pb-Free, satisfying modern environmental requirements. Its construction uses onsemi's standard power MOSFET process technology, balancing cell density with ruggedness. Typical applications include 12 V automotive ECU loads, high-current synchronous buck converters, motor drive H-bridges, hot-swap circuits, and battery management systems where the wettable flank and AEC-Q101 qualification provide automotive-grade reliability. When designing with this device, attention should be paid to gate drive voltage and PCB thermal layout. A VGS of 10 V ensures full RDS(on) optimization, while adequate copper pour on the drain pad is essential for heat dissipation at the 185 A current level.
NVMFS6B25NLT1G - 100V 24mΩ 33A N-Channel MOSFET | onsemi
The onsemi NVMFS6B25NLT1G is an automotive-grade N-Channel power MOSFET rated at 100 V VDS, 24 mΩ maximum on-resistance, and 33 A continuous drain current, supplied in a 5-DFN (5x6) 8-SOFL surface-mount package. Built on onsemi's T5 trench MOSFET process, it delivers low QG and capacitance to minimize driver-stage switching losses. Drive levels are specified at 4.5 V and 10 V VGS, making the device suitable for both logic-level and standard gate drive circuits in switching topologies. A power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized for switching and amplifying power signals in electronic circuits. Within the broader taxonomy, the NVMFS6B25NLT1G is a single N-Channel enhancement-mode MOSFET, which itself belongs to the discrete-semiconductor power-MOSFET family and ultimately to the wider class of unipolar transistors. The part is qualified to AEC-Q101, placing it inside the automotive-qualified power MOSFET category, and is offered in the SO-8FL (5x6 mm DFN) package family used widely across synchronous rectification, hot-swap, and load-switching designs. Key electrical features include a drain-to-source breakdown of 100 V, continuous drain current of 8 A (Ta) and 33 A (Tc), pulsed drain current of approximately 132 A, and power dissipation of 3.6 W at the board surface and 62 W at the case. The gate-source voltage is rated to ±20 V, and the on-resistance is specified at 24 mΩ maximum at VGS = 10 V. The 5-DFN (5x6) 8-SOFL package provides an exposed drain pad for low thermal resistance (θJA on FR4 of about 62 °C/W with 650 mm² 2 oz copper), allowing efficient heat removal in compact PCB layouts. Internally, the device uses trench MOSFET technology with optimized cell pitch to achieve the 24 mΩ figure while keeping gate charge low for fast turn-on/turn-off transitions. This combination of low QG and low RDS(on) reduces conduction and switching losses simultaneously, which is essential in high-frequency synchronous buck, half-bridge, and full-bridge topologies where dead-time losses dominate efficiency curves. Typical applications include automotive ECUs, motor control H-bridges, LED lighting drivers, synchronous rectification in DC-DC converters, and battery protection / hot-swap controllers in 12 V, 24 V, and 48 V systems. It is also used as a load switch in industrial PLC and telecom secondary-side switching converters. When designing with the NVMFS6B25NLT1G, place the gate-driver loop as short as possible and add a 10-100 kΩ gate pull-down to prevent unintended turn-on during VGS transients. The exposed pad must be soldered to a copper pour of at least 650 mm² on FR4 with 2 oz copper to achieve the rated thermal performance; without this, derating is required. This page synthesizes distributor pricing, automotive-grade drop-in alternatives in the same SO-8FL package, and practical thermal and PCB design notes that go beyond what the manufacturer datasheet alone provides.
PJA3415 - 20V P-Ch 4A MOSFET SOT-23 | Panjit International Inc.
The Panjit International PJA3415 is a 20V P-Channel Enhancement Mode MOSFET rated for 4A continuous drain current, housed in a compact SOT-23 surface-mount package. It features a low on-resistance in a small footprint, making it suitable for load switching, power-path management, and battery protection circuits where board space and efficiency both matter. The device is offered with manufacturer ordering suffixes (R1, R2) for tape and reel orientation. A P-Channel Enhancement Mode MOSFET is a type of field-effect transistor in which the conducting channel is formed by applying a negative gate-to-source voltage (VGS) relative to the source. P-channel MOSFETs are typically used on the high-side of a load (the supply rail side) in low-voltage systems where a simple, low-cost high-side switch is needed. They sit within the broader transistor hierarchy: MOSFET -> FET -> discrete semiconductor -> active component. Because the gate is voltage-controlled, P-channel devices draw essentially no DC gate current in static operation, enabling direct MCU GPIO driving without driver stages in many low-power designs. Key features include 20V drain-to-source voltage rating, 4A continuous drain current at TA = 25C, low on-resistance, and a fast switching transition suitable for DC-DC converters and power-ORing applications. The standard SOT-23 package is one of the most widely adopted small-outline surface-mount packages in the industry and is supported by virtually all automated assembly lines. Per the manufacturer datasheet, the maximum junction-to-ambient thermal resistance (RθJA) on a 1-inch FR-4 board with 2oz copper is package-limited. Typical applications include power management in portable devices, battery protection circuits in single-cell Li-ion/polymer packs, load switching in USB peripherals, high-side switches in solid-state relays (SSRs), and power-rail switching in IoT sensor nodes. The P-channel topology eliminates the charge pump typically needed for N-channel high-side switches, simplifying firmware and reducing BOM count. When designing with the PJA3415, ensure gate-source voltage stays within the absolute maximum rating and use a pull-up or pull-down resistor to set the default state during MCU reset. Decoupling at the drain and source rails is recommended for switching applications to limit ringing. For thermal management in continuous 4A operation, follow the manufacturer's PCB layout guidance for the SOT-23 footprint. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet. All specifications are sourced from the Panjit International PJA3415 datasheet and authorized distributor listings as of 2026-10-09.
PJA3415AE - 20V P-Channel MOSFET, ESD Protected | SOT-23 | Panjit
The Panjit PJA3415AE is a 20V P-Channel Enhancement Mode MOSFET with built-in ESD protection, housed in a 3-pin SOT-23 surface-mount package. It is rated for -4.3A continuous drain current (Ta) with 1.25W power dissipation on a 1-inch FR-4 board with 2oz copper pad. The -AE suffix denotes the ESD-protected variant of the base PJA3415 part. As a P-Channel device, it is naturally suited to high-side load switching where the load is tied to ground and the source sits on the supply rail. A P-Channel Enhancement Mode MOSFET is a type of field-effect transistor in which conduction is controlled by applying a negative gate-to-source voltage relative to the threshold. P-Channel MOSFETs sit in the power-management and discrete-semiconductor hierarchy alongside N-Channel MOSFETs, IGBTs, BJTs, and JFETs, and they are the preferred high-side switch in low-voltage (<30V) battery and USB-powered systems because the gate drive is referenced to the source and needs no charge pump or bootstrap. The enhancement-mode construction means the channel does not conduct at Vgs = 0 V, giving a normally-off safe behavior ideal for power-rail switching. Key electrical characteristics of the PJA3415AE include low on-resistance that minimizes conduction loss during load switching, a low gate threshold that allows direct drive from 1.8V to 5V logic-level GPIOs, and integrated ESD protection on the gate pin to withstand HBM discharge events that would damage unprotected small-signal MOSFETs. The SOT-23 footprint is the industry-standard 3-pin surface-mount outline and enables hand-solderable, compact designs in mobile and handheld applications. The -AE variant adds on-board ESD protection to the basic PJA3415 part. This means the gate oxide is shielded against human-body-model and machine-model discharge, enabling handling without special ESD precautions and improving field reliability in consumer products. Typical applications for this part include USB load-switch and power-mux circuits in smartphones and tablets, battery protection / discharge control in single-cell Li-ion packs, notebook and ultrabook power-rail management, and portable-device load switching where space is constrained. It can also serve as a reverse-current blocking switch for OTG / 5V boost output protection. When designing with the PJA3415AE, gate-drive timing and pull-down resistors should be considered. A 100 kohm gate-to-source resistor ensures the MOSFET stays off during MCU reset, and a 10 kohm series gate resistor dampens ringing on fast switching edges to limit EMI. This page combines manufacturer specifications, parametric alternatives, and practical design notes not aggregated on a single sheet elsewhere, helping engineers evaluate the PJA3415AE against adjacent P-Channel MOSFETs with comparable voltage and current ratings.
SCT3060AL - 650V 39A SiC Trench MOSFET | ROHM
The ROHM SCT3060AL is an N-channel silicon carbide (SiC) trench MOSFET rated for 650 V drain-source voltage and 39 A continuous drain current, housed in a TO-247 (THD) through-hole package. As a trench-structure SiC power MOSFET, it combines high voltage resistance, low on-resistance, and fast switching speed in a single discrete device for high-efficiency power conversion. A SiC power MOSFET is a type of wide-bandgap power transistor that uses silicon carbide instead of silicon as the semiconductor material. Because silicon carbide has roughly ten times the critical electric field strength of silicon, SiC MOSFETs can support high blocking voltages with thinner, more heavily doped drift regions, which reduces on-state resistance and switching losses. Within the power semiconductor hierarchy, the SCT3060AL belongs to the class of discrete power transistors (MOSFETs, IGBTs, and related switching devices) used as the primary switching elements in power supplies and motor drives. Key features of the SCT3060AL include its 650 V voltage rating suited to off-line and 400 V DC bus applications, a 39 A current rating for high-power designs, low on-resistance that minimizes conduction loss, fast switching speed that enables high-frequency operation and smaller magnetics, and fast reverse recovery that reduces losses in bridge and synchronous-rectifier topologies. Technically, the trench-gate structure lowers channel resistance compared with planar SiC MOSFET designs, improving the figure of merit for conduction loss. Compared with equivalent 650 V silicon superjunction MOSFETs and IGBTs, the SiC die offers substantially lower switching energy, allowing designers to raise switching frequency, shrink passive components, and improve overall converter efficiency. The intrinsic body diode provides fast reverse recovery without the tail-current behavior of IGBTs. Typical applications include server and telecom power supplies, solar power conditioners and photovoltaic inverters, EV charging infrastructure, high-efficiency industrial motor drives, and switching power supplies where 650 V class SiC switching devices improve efficiency and power density. Design consideration: proper gate-drive voltage is essential to realize the rated low on-resistance, and layout inductance should be minimized to fully exploit the fast switching capability; verify exact RDS(on), threshold, and thermal limits in the ROHM datasheet before finalizing designs. This page synthesizes verified distributor and manufacturer data, drop-in alternative analysis, pricing guidance, and practical design notes not consolidated in the manufacturer datasheet.
SCT4062KRC15 - 1200V 26A 62mΩ SiC MOSFET TO-247-4 | ROHM
The ROHM SCT4062KRC15 is a 4th-generation silicon-carbide (SiC) trench-gate N-channel power MOSFET rated for 1200 V drain-source voltage and 26 A continuous drain current (Tc) in a TO-247-4L through-hole package with Kelvin-source pin. The part delivers a typical R_DS(on) of 62 mΩ at V_GS = 18 V and an industry-leading figure-of-merit for its class, combining low conduction loss with the fast switching edges demanded by modern hard-switched converters. It is a member of ROHM's 4-pin THD family that exposes the driver-source terminal so the gate-drive return loop is decoupled from the main power source bond, eliminating source-inductance-induced V_GS ringing and improving switching loss at high di/dt. A Silicon Carbide (SiC) MOSFET is a wide-bandgap power transistor built on a SiC epitaxial layer rather than conventional silicon. Because SiC has a critical electric field roughly 10× that of silicon, the same blocking voltage can be achieved with a much thinner drift region, slashing R_DS(on) × area. Within the broader taxonomy it sits under MOSFET → power MOSFET → discrete semiconductor → wide-bandgap semiconductor, and is the recommended choice where efficiency, switching frequency, or junction temperature exceed what silicon IGBTs and super-junction MOSFETs can deliver. The SCT4062KRC15 features a 4th-generation trench-structure SiC die with gate-oxide reliability rated for a ±18 V V_GS window, built-in protection against short-circuit events, a low body-diode V_F for synchronous-rectification use, and a 100 °C-rated continuous drain current (subject to thermal design). Compared with ROHM's previous-generation SCT3x series the new die cuts on-resistance by about 40 % and switching loss by about 50 %, while the 15 V (nominal) gate drive simplifies the interface from standard SiC gate-driver ICs. A separate Kelvin-source pin (pin 4) reduces gate-loop inductance, which is essential at switching frequencies above 50 kHz. Typical applications include 800 V-class electric-vehicle traction inverters, on-board EV chargers (OBC), 3-phase photovoltaic string inverters, telecom rectifiers and industrial SMPS, induction-heating converters, and DC solid-state circuit breakers. The 4-pin TO-247 footprint is the de-facto standard for high-power SiC discrete designs, allowing direct substitution in upgrade-in-place programs from 3-pin TO-247 silicon MOSFETs to SiC. The device's AEC-Q101-qualified sibling (SCT4062KRHRC15) is pin-compatible for automotive programs. For drop-in upgrading of legacy 3-pin TO-247-4L SiC designs, simply leave the original source pin in place, connect pin 4 to the gate-driver ground, and verify that the drive voltage matches the SiC V_GS(th) window. The page synthesizes distributor pricing, parametric alternatives, and practical gate-drive design notes not found in the manufacturer datasheet.
SCTW100N65G2AG - 650V 100A SiC Power MOSFET | STMicroelectronics
The STMicroelectronics SCTW100N65G2AG is an automotive-grade silicon carbide (SiC) N-channel Power MOSFET in a HiP247 through-hole package, rated at 650 V drain-source voltage, 100 A continuous drain current (Tc), and 420 W maximum power dissipation. It uses ST's 2nd-generation SiC MOSFET technology with a typical on-resistance of 20 mΩ at TJ = 25 °C, delivering high efficiency and fast switching for automotive and industrial power conversion. A silicon carbide MOSFET is a wide-bandgap power transistor that switches high voltages and currents with substantially lower switching and conduction losses than a silicon MOSFET or IGBT of comparable rating. SiC technology sits in the power semiconductor hierarchy below IGBT and silicon MOSFET for high-voltage (>600 V) applications, offering higher switching frequency capability, lower switching losses, and better thermal conductivity. AEC-Q101 qualified variants like the SCTW100N65G2AG are specifically designed for harsh automotive environments such as traction inverters and on-board chargers. Key differentiating specifications include 20 mΩ typical RDS(on) at 25 °C, very fast and robust intrinsic body diode, extremely low gate charge and input capacitance, and a 650 V repetitive breakdown voltage with 100 A continuous drain current. The HiP247 through-hole package supports 420 W power dissipation with a low junction-to-case thermal resistance optimized for forced-air or liquid-cooled heatsinks typical in EV power electronics. The device's 2nd-generation SiC trench architecture minimizes RDS(on) per unit area and integrates a robust intrinsic body diode, eliminating the need for external anti-parallel diodes in many bridge-leg applications. Compared with silicon IGBTs of similar voltage class, the SiC MOSFET reduces switching losses by 50-70 % at the same frequency, allowing smaller magnetics and higher converter power density in traction and charging systems. Typical applications include on-board chargers (OBC) for electric vehicles, EV traction inverters, DC-DC converters for xEV powertrains, photovoltaic (PV) string inverters, industrial servo drives, and high-frequency telecom power supplies. AEC-Q101 qualification makes it directly suitable for automotive environments per customer-required quality levels and PPAP documentation. When designing around this part, gate-drive voltage must reach +18 V typical for the rated RDS(on), with a 0 V or negative turn-off recommended to ensure noise immunity at high dV/dt. A small gate-source resistor (typically 10 Ω) plus proper PCB layout minimize ringing and overshoot on the gate. This page synthesizes SiC MOSFET comparison data with several ST family variants and competing SiC MOSFETs, parameter-locked PCB layout notes, and converter design considerations not consolidated in the manufacturer datasheet, all sourced from STMicroelectronics and authorized distributor listings as of 2026-10-20.
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
The Vishay Siliconix SI1553DL-T1-E3 is a complementary 20 V N-channel and P-channel TrenchFET power MOSFET array housed in a 6-pin SC-70 (also identified as SOT-363 / SC-88) surface-mount package. It delivers 660 mA continuous drain current on the N-channel and 410 mA on the P-channel, with a low on-resistance of approximately 5 Ω at a 2.5 V gate drive, enabling direct switching from standard 2.5 V, 3.3 V, or 5 V logic rails. A MOSFET array (also called a MOSFET pair or dual MOSFET) is a single-package device that integrates two discrete MOSFETs - typically one N-channel and one P-channel - into a common footprint. MOSFET arrays belong to the broader category of discrete semiconductors, specifically the power MOSFET subfamily, which in turn is part of the transistor family and the broader semiconductor device hierarchy. By combining both polarities in one IC, designers can build complementary switches, level shifters, load switches, and small-signal analog stages without placing two separate SOT-23 or SC-70 parts. Key features include a 1 V typical gate threshold, low on-resistance of 5 Ω at VGS = 2.5 V, fast switching, and a compact 6-lead SC-70 (SC-88 / SOT-363) outline. The TrenchFET process geometry shrinks the channel resistance per unit area, allowing the device to deliver higher current than older planar MOSFET generations within the same die footprint. The complementary N/P architecture lets designers replace two discrete transistors - one N-channel and one P-channel - with a single part, simplifying PCB layout and reducing BOM count. This is particularly useful where space is constrained and the two devices must be thermally and electrically matched. Typical applications include load switching in portable and battery-powered devices, level translation between 1.8 V/3.3 V logic domains, power-rail gating in smartphones and wearables, LED driver stages, and small-signal analog switching. The 2.5 V gate threshold allows direct interface with sub-3 V microcontrollers without a separate gate driver. When designing with the SI1553DL-T1-E3, observe standard MOSFET handling precautions: gate oxide breakdown voltage is 8 V, so do not exceed this rating under transient conditions, and ensure the gate-source voltage stays within datasheet limits. Use a gate resistor in the 10 Ω to 100 Ω range to control ringing and EMI during high-speed switching. This page consolidates distributor pricing, drop-in compatible alternatives, and PCB-level design notes in one place - a synthesis not found in the standalone Vishay datasheet.
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
The Vishay SI1553DL-T1-GE3 is a complementary N-channel and P-channel MOSFET array housed in a 6-pin SC-70 (SOT-363) surface-mount package, rated for 20 V drain-source breakdown and 700 mA (N-channel) / 500 mA (P-channel) continuous drain current. It integrates both polarities of small-signal TrenchFET power MOSFETs on a single die to save board space in switching and level-shift circuits. The -GE3 suffix indicates lead-free and halogen-free termination finish, complying with RoHS and IEC 61249-2-21 halogen-free definitions. A complementary MOSFET pair (N-channel + P-channel on one substrate) is a building block for low-power switching applications where symmetrical high-side / low-side or push-pull drive is needed without using two discrete transistors. The two MOSFETs share the same 20 V VDS rating and 2.5 V gate-source threshold range, allowing them to be driven from the same logic-level control signal without level translation. By integrating both polarities in one SC-70 package, designers can halve the board footprint of equivalent discrete solutions and improve channel-to-channel thermal and parametric matching. Key features include a low on-resistance of approximately 0.32 ohm at VGS = 4.5 V (N-channel) and 0.5 ohm (P-channel), making the part efficient for portable and battery-powered designs. The TrenchFET process technology minimizes RDS(on) per unit area, while 2.5 V gate threshold supports direct drive from 1.8 V and 3.3 V microcontroller GPIO outputs with logic-level enhancement. The SC-70-6 package provides a compact 2.0 x 1.25 mm footprint suited for handheld and wearable products, and the device is qualified over the -55C to +150C junction temperature range. Typical applications include load switching in portable electronics, signal-level shifting between domains of different voltage rails, analog multiplexer / demultiplexer building blocks, and complementary push-pull drivers for small DC fans, relays, or LED strings. The small footprint also suits wearable health monitors and IoT sensor nodes where PCB area is at a premium. When designing with this device, note that the N-channel and P-channel devices share the same SC-70 pinout but are not interchangeable with single-channel equivalents. Plan gate-drive RC snubbers and ensure VGS never exceeds the absolute maximum of +/- 8 V. For high-frequency circuits, keep the gate-loop PCB inductance low to prevent unintended ringing during switching transitions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
The Vishay Siliconix SI1563DH-T1-E3 is a complementary 20 V N/P-channel MOSFET array housed in a 6-pin SC-70-6 (SOT-363) surface-mount package with a maximum power dissipation of 570 mW. The N-channel device is rated at 1.13 A continuous drain current, while the P-channel companion is rated at 880 mA, both optimized for low-threshold gate drive from a 1.8 V or 2.5 V logic-level source. An N/P complementary MOSFET pair is a single-package integration of one N-channel and one P-channel enhancement-mode MOSFET, allowing designers to build push-pull, level-shift, load-switch, and small-signal analog switches with a single SOT-363 footprint. Both transistors share identical 20 V drain-source breakdown ratings and on-resistance characteristics, so they can be used as direct half-bridge switches, analog signal multiplexers, and low-side/high-side complementary switching pairs in portable, battery-powered electronics. The SI1563DH uses Vishay's TrenchFET Gen III technology to deliver sub-1 V gate threshold operation, suitable for direct interface with 1.8 V microcontrollers and modern low-power MCUs without external gate drivers. Low on-resistance per square millimeter minimizes conduction losses, while a 570 mW power budget supports load switching in handheld and wearable form factors. The compact SC-70-6 footprint reduces PCB area by more than 50% compared to two discrete SOT-23 MOSFETs. Typical applications include load switching in portable devices, power-rail multiplexing, level shifting between low-voltage MCUs and 5 V peripherals, battery protection circuits in single-cell Li-ion systems, and small-signal analog switching for audio and sensor paths. The complementary topology enables half-bridge and H-bridge motor drive stages for vibration motors and small DC fans. When laying out the SI1563DH, place the input/output traces symmetrically around the package center, connect the exposed paddle to a copper pour that also serves as thermal spreading, and keep gate traces short to prevent dv/dt-induced turn-on. The SC-70-6 footprint is electrically identical to a SOT-363 footprint and is fully compatible with standard reflow profiles up to 260 C peak.
SI2337DS-T1-E3 - P-Channel 80V 2.2A TrenchFET MOSFET | Vishay
The Vishay Siliconix SI2337DS-T1-E3 is a P-Channel 80V TrenchFET power MOSFET rated for 2.2A continuous drain current (Tc), with on-resistance of 270 mOhm max at Vgs = 10V, packaged in a compact SOT-23-3 (TO-236) surface-mount form. It dissipates 760 mW (Ta) or 2.5 W (Tc) and operates across a -55C to +150C junction temperature range, suitable for space-constrained switching applications. A P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled transistor that conducts when the gate is pulled below the source. P-Channel parts simplify high-side switching designs because the load can sit at ground rather than at the switched rail, eliminating the need for a charge pump or bootstrap circuit in many topologies. Within the power semiconductor hierarchy, P-Channel MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs, and they sit alongside N-Channel MOSFETs, IGBTs, and bipolar transistors as the workhorses of modern power conversion. Key features include the TrenchFET generation-3 cell architecture which reduces Rds(on) per unit silicon area, an integrated antiparallel body diode that simplifies synchronous-free designs, and halogen-free construction per IEC 61249-2-21. The -80V Vds rating provides substantial headroom for 48V telecom rails, automotive load-dump transients, and industrial bus switching. The SOT-23-3 footprint keeps the part compatible with hand-soldering and standard reflow profiles used by hobbyist and production lines alike. In load-switch and high-side switch topologies, the SI2337DS-T1-E3 reduces BOM count by removing the need for gate-drive transformers. The trench-gate structure minimizes conduction losses, while the small SOT-23-3 outline supports high-density PCB layouts. Designers targeting USB power switches, battery protection circuits, and DC/DC converters benefit from its low gate charge and fast switching edges. Typical applications include USB port power switching, battery management system (BMS) charge/discharge FETs, load switching in portable electronics, and high-side drive of relays and solenoids. The wide -55C to +150C operating range also suits automotive underhood modules and industrial controls. When designing with this device, derate conduction current aggressively above 25C ambient - the 2.2A Tc rating drops to roughly 0.6A at 70C in still air. Use a gate resistor of 10-100 ohm to limit ringing, and ensure Vgs stays below the +-20V absolute maximum to avoid gate-oxide rupture.
SI7155DP-T1-GE3 - 40V P-Channel TrenchFET MOSFET | Vishay
The Vishay Siliconix SI7155DP-T1-GE3 is a P-Channel TrenchFET Gen III power MOSFET rated for -40 V VDS, supporting continuous drain current up to 31 A at TA=25C and pulsed current capability up to 100 A at TC=25C, housed in a compact PowerPAK SO-8 surface-mount package. Key specifications include a maximum drain-source voltage of -40 V, a gate threshold of -20 V VGS, continuous drain current of 31 A (TA) / 100 A (TC), and pulsed drain current of 100 A per the device datasheet. The part dissipates 6.25 W at TA and 104 W at TC, and carries the industry-leading TrenchFET Gen III RDS(on) ratings that make it competitive with much larger packages like DPAK. A P-Channel MOSFET (PMOS) is a four-terminal field-effect transistor in which the channel conducts when the gate is pulled below the source potential. PMOS devices are commonly used as high-side switches because their source is tied to the load return and a gate voltage below ground can fully enhance the channel. Power MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs -> TrenchFET family, and Vishay's PowerPAK SO-8 package is the recognized SMD alternative to through-hole DPAK footprints where PCB real estate and thermal performance must coexist. The SI7155DP benefits from 100 % Rg (gate resistance) and UIS (avalanche / Unclamped Inductive Switching) tested reliability per Vishay's manufacturing flow. The PowerPAK SO-8 case provides a low thermal resistance path from the die to the PCB copper, which in many applications eliminates the need for an external heatsink while still delivering D2PAK-class current handling. Typical applications for the SI7155DP-T1-GE3 include adapter and charger load switches, server and telecom power systems OR-ing and high-side switching, battery protection circuits in portable equipment, and high-power load management in industrial DC distribution. When designing the gate drive, designers should pull VGS to approximately -10 V for full enhancement and keep gate-source voltage strictly within the absolute maximum of +/-20 V to avoid gate-oxide breakdown. Source-pin layout should route the high-current return first to minimize package parasitic inductance between the source bond wire and the main current path. This page synthesizes Vishay distributor pricing tiers, drop-in PowerPAK SO-8 alternatives, and practical PCB layout notes that go beyond the raw datasheet information.
SI7460DP-T1-GE3 - 60V N-Ch TrenchFET PowerPAK SO-8 | Vishay
The Vishay Siliconix SI7460DP-T1-GE3 is an N-Channel 60 V TrenchFET® power MOSFET rated for 11 A continuous drain current (TA=25 °C) and packaged in the thermally enhanced PowerPAK SO-8 surface-mount land pattern with a 1.07 mm profile. According to the manufacturer datasheet, the device delivers a maximum on-resistance of 9.6 mΩ at VGS=10 V, making it well-suited for high-current DC-DC and load-switching applications where conduction loss dominates. The -GE3 suffix indicates lead (Pb)-free and halogen-free compliance per IEC 61249-2-21. A power MOSFET is a voltage-controlled semiconductor switch whose on-state resistance (RDS(on)) and switching speed determine efficiency in synchronous rectification, load switching, and DC-DC converter roles. TrenchFET technology reduces cell pitch and lowers on-resistance per unit area compared with older planar structures, while the PowerPAK SO-8 lands directly on the standard SO-8 dual footprint with a much larger metal pad for heat extraction. Within the Vishay portfolio, this places the SI7460DP between small-signal SOT-23 FETs and larger DPAK/TO-220 parts targeted at higher-current or higher-voltage rails. Key features include a 60 V VDS rating with ±20 V VGS tolerance, 9.6 mΩ maximum RDS(on) at VGS=10 V, fast switching speeds optimized for SMPS stages, and a low 1.07 mm profile suitable for slim secondary-side synchronous-rectifier positions. The PowerPAK SO-8 provides substantially lower junction-to-ambient thermal resistance than a standard SO-8, typically allowing multi-amp operation without an external heatsink when placed on adequate copper. The device uses a TrenchFET® silicon gate structure combined with Vishay's PowerPAK SO-8 packaging to minimize both conduction and switching losses. The exposed-drain pad construction routes heat directly into the PCB copper, lowering thermal impedance in steady-state operation compared with a standard SO-8 dual. The combination is engineered for high-frequency SMPS, secondary-side synchronous rectification, and motor-drive low-side switches where board space is constrained. Typical applications include secondary-side synchronous rectification in isolated DC-DC converters, high-side and low-side switches in buck/boost converters, battery protection and load management in portable systems, and motor-drive half-bridges below 60 V. The 60 V rating provides margin above 24 V industrial rails and 48 V telecom buses. When designing with this part, verify that the load current derates properly across TA and that the PCB copper area is sized to maintain junction temperature below the 150 °C absolute maximum. Drive the gate with a 10 V gate-drive stage to achieve the lowest RDS(on) and minimize conduction loss. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and PCB-layout guidance derived from the manufacturer datasheet and reference designs.
SIRA18ADP-T1-GE3 - 30V N-Channel MOSFET | Vishay
The Vishay Intertechnology SIRA18ADP-T1-GE3 is a 30 V N-channel power MOSFET with 30.6 A rated drain current at the case temperature, 14.7 W rated power dissipation at the case, and a PowerPAK SO-8 surface-mount package. It uses TrenchFET Gen IV technology and is identified by the manufacturer as lead-free and halogen-free. A power MOSFET is a voltage-controlled semiconductor used as an electronic switch. In its off state, the device blocks the drain-to-source voltage; in its on state, it provides a low-resistance conducting path. This switching behavior places the SIRA18ADP-T1-GE3 within the discrete semiconductor hierarchy: N-channel MOSFET, power MOSFET, transistor, and semiconductor. Verified headline features include a 30 V drain-to-source rating, a 20 V gate-to-source rating, 30.6 A drain current at the case, and 14.7 W power dissipation at the case. The TrenchFET Gen IV process and 100% gate-resistance and UIS testing provide useful design context, while the lead-free and halogen-free construction supports environmentally constrained production requirements. The device is intended for compact, low-voltage switching circuits where the 30 V rating and PowerPAK SO-8 package are appropriate. Its voltage rating makes it relevant to 12 V and lower-voltage rails, although the exact operating limits for pulse, body-diode, avalanche, and layout conditions remain subject to the manufacturer datasheet. Potential uses include DC-DC converter switches, load switches, motor or solenoid drivers, battery-powered systems, and power-supply control stages. The MOSFET should be selected only after checking DC and switching losses, gate-drive voltage, current pulses, junction temperature, and the PCB copper available for heat dissipation. For reliable operation, use a gate driver that satisfies the device voltage and timing requirements, keep the power loop compact, and provide thermal copper around the PowerPAK SO-8 leads. This page combines verified manufacturer and distributor information with engineering-oriented selection and design guidance.
SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower
The Sinopower Semiconductor SM4036NHKP is an N-Channel Enhancement Mode Power MOSFET rated at 40V VDS and 80A continuous drain current, housed in a PDFN-8 (also called DFN5x6) surface-mount package. It is designed for high-efficiency switching applications including DC-DC converters, motor control, and load switching in industrial and consumer power systems. An N-Channel Enhancement Mode MOSFET is a voltage-controlled semiconductor device in which a positive gate-to-source voltage creates an inversion layer (channel) that allows electron current to flow from drain to source. The 'enhancement' designation means the channel does not conduct at VGS=0 and must be enhanced by the gate bias. MOSFETs are the workhorse of modern power electronics because they switch at high speed, require minimal drive current, and exhibit low on-resistance (RDS(on)). N-Channel devices (carrying electron current) offer lower RDS(on) per unit silicon than P-Channel devices, making them the preferred choice in high-current, low-loss applications. N-Channel MOSFETs belong to the broader category of power MOSFETs, which sit under discrete semiconductors and serve as the switching element in nearly every power conversion topology. Key features of the SM4036NHKP include very low on-resistance that minimizes conduction losses, fast switching speeds that reduce switching losses, and a 40V breakdown voltage suited to 12V and 24V bus rails. The PDFN-8 package exposes a large drain pad to the PCB, providing excellent thermal dissipation and enabling high continuous currents in a compact 5mm x 6mm footprint. Marking code '4036NH' on the device top allows easy identification after board assembly. Internally, the SM4036NHKP uses Sinopower's proprietary trench MOSFET cell technology, which maximizes cell density and minimizes RDS(on) per unit area. The device is fully characterized for avalanche operation, providing ruggedness against unclamped inductive switching events commonly seen in motor and solenoid drive circuits. Typical applications include high-current DC-DC buck and boost converters, brushless DC (BLDC) motor drives, battery protection circuits in power tools and e-bikes, and OR-ing / hot-swap switches in telecom and server power distribution units. When designing with the SM4036NHKP, ensure the gate drive voltage reaches at least 10V to fully enhance the channel and achieve the rated low on-resistance. Use a gate resistor of 10-100 ohm to control switching transients and minimize ringing. The exposed drain pad must be soldered to a sufficient copper pour for thermal relief. This page combines distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
SPP11N80C3XKSA1 - 800V 11A CoolMOS C3 N-Channel MOSFET | Infineon
The Infineon SPP11N80C3XKSA1 is an N-Channel 800 V CoolMOS C3 power MOSFET delivering 11 A continuous drain current (Tc) and 156 W power dissipation (Tc) in a PG-TO220-3-1 through-hole package. Built on Infineon's revolutionary high-voltage CoolMOS C3 superjunction technology, it combines ultra-low effective output capacitance, ultra-low gate charge, and extreme dv/dt ruggedness, qualifying it for high-density switched-mode power conversion stages. A power MOSFET is a voltage-controlled three-terminal semiconductor switch (gate, drain, source) that converts DC or pulsed drive into a low-resistance conduction path between drain and source. The 800 V drain-source breakdown (V(BR)DSS) places this device in the high-voltage MOSFET class used in offline SMPS front ends, while the 11 A continuous rating places it in the mid-power segment, suitable for PFC stages, primary-side switches in flyback/forward converters, and industrial welding and motor-drive inverters. Hypernyms: power MOSFET -> MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. Synonyms: N-FET, N-channel enhancement-mode MOSFET, superjunction MOSFET, CoolMOS. Key features include 800 V drain-source breakdown (V(BR)DSS), 11 A continuous drain current at case temperature (ID @ Tc), 156 W maximum power dissipation (Ptot @ Tc), ultra-low gate charge (Qg) for reduced driver loss, ultra-low effective output capacitance (Coss(eff)) for higher switching frequency, high peak current capability for inductive loads, and extreme dv/dt rating for hard-switched topologies. The PG-TO220-3-1 package provides a low thermal-resistance path through the central mounting tab. Technically, CoolMOS C3 uses a vertical superjunction (SJ) structure that breaks the silicon area-resistance tradeoff of planar MOSFETs. The result is an order-of-magnitude lower specific on-resistance (RDS(on) x area) at the same voltage class. The trade-off is a non-linear Coss that decreases with VDS, which benefits zero-voltage-switching (ZVS) topologies like LLC and PFC boost. Pb-free lead plating and RoHS compliance support modern manufacturing directives, and JEDEC qualification assures reliability under industrial thermal and humidity stress. Typical applications include switch-mode power supplies (SMPS) for industrial 380-400 V AC-DC front ends, power factor correction (PFC) boost stages, telecom rectifier modules, solar inverter primary switches, induction-heating resonant half-bridges, and welding inverter power stages. The wide safety margin of an 800 V rating on a 230/400 V AC mains-rectified bus (peak ~565 V) gives designers additional headroom for surge and ring transients. When designing with this device, observe avalanche energy (EAS) limits during inductive turn-off, and add a low-impedance gate-drive loop to control dv/dt. For hard-switched topologies above 50 kHz, plan thermal dissipation carefully - the 156 W rating assumes a 25 C case temperature, and real PCB heatsinking typically derates this to 60-80 W. This page synthesizes distributor pricing, drop-in CoolMOS C3 alternatives, and practical design notes not found in the manufacturer datasheet alone.
SPP17N80C3XKSA1 - 800V 17A CoolMOS C3 MOSFET | Infineon
The Infineon SPP17N80C3XKSA1 is an 800 V, 17 A N-channel power MOSFET from Infineon's third-generation CoolMOS C3 family, housed in a through-hole PG-TO220-3-1 package with continuous drain current of 17 A at Tc and maximum power dissipation of 208 W at Tc. Built on Infineon's superjunction (SJ) technology platform introduced in 2001, it targets high-voltage switched-mode power supplies and industrial converters requiring low conduction and switching losses. A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates a conduction channel between source and drain. Within the broader taxonomy, MOSFETs belong to discrete transistors, which sit under discrete semiconductors alongside diodes and thyristors; the CoolMOS superjunction family is a specialized MOSFET sub-family optimized for high breakdown voltages with markedly lower specific on-resistance (RDS(on) x area) than conventional planar MOSFETs. The C3 generation specifically reduces gate charge, output capacitance, and reverse-recovery charge relative to C2, enabling higher switching frequencies and smaller magnetics in offline SMPS designs. Key features of the SPP17N80C3XKSA1 include an 800 V drain-source breakdown voltage, 17 A continuous drain current at 25 C case temperature, 208 W maximum power dissipation at Tc, low intrinsic drain-source on-resistance for the voltage rating, and fast body-diode behavior suitable for hard-switched bridge converters. The through-hole PG-TO220-3-1 package provides a robust mechanical footprint with a metal tab that can be bolted to a heatsink for thermal management. Typical applications include switch-mode power supplies (SMPS) for telecom and server AC-DC front-ends, uninterruptible power supplies (UPS), solar inverters, welding equipment, and high-voltage industrial drives. The CoolMOS C3 series is well known for rugged avalanche capability and high dv/dt immunity, making it suitable for hard-switched PFC and half-bridge topologies. When designing with this part, ensure the gate driver delivers at least 10 V Vgs for full enhancement and that snubber or RCD protection is considered for hard-switched bridge circuits. Heatsink selection must account for the 208 W power rating and thermal resistance of the TO-220 package. This page synthesizes distributor pricing from DigiKey/Mouser/LCSC, drop-in TO-220-3 equivalents, and practical design notes not consolidated in the manufacturer datasheet. All specifications are anchored to the Infineon SPA/SPP 17N80C3 datasheet and the CoolMOS C3 product family documentation.
SPP80P06PHXKSA1 - P-Ch 60V 80A 340W TO-220 MOSFET | Infineon
The Infineon SPP80P06PHXKSA1 is a P-channel enhancement-mode power MOSFET rated at -60 V VDS and -80 A continuous drain current (at TC), with a maximum power dissipation of 340 W (TC), housed in a through-hole PG-TO220-3-1 (TO-220-3) package. Built on Infineon's mature OptiMOS P-channel silicon process, this part targets high-current switching on the high-side of a load (low-side switching with source tied to ground is also supported), replacing PNP bipolar transistors and P-channel MOSFETs from older process generations. A P-channel MOSFET (PMOS) is a voltage-controlled field-effect transistor in which the channel is formed by holes; turning the gate ON requires pulling the gate voltage below the source by at least the threshold voltage VGS(th), which simplifies high-side drive circuits because no charge pump or bootstrap is needed when the source is tied to the supply rail. P-channel MOSFETs sit inside the broader power MOSFET taxonomy (P-channel/N-channel, enhancement-mode/depletion-mode, planar/trench), which in turn belongs to the discrete power semiconductor family (MOSFET -> transistor -> discrete semiconductor -> power management component). Key features include a low on-state resistance for the voltage class, avalanche-rated single-pulse robustness, an operating junction temperature range of -55 C to +175 C, and a TO-220-3 through-hole footprint with a metal tab that doubles as the drain connection and a thermal mounting surface. The package accepts standard M3 screws and clip-on heatsinks, enabling straightforward thermal management in motor-drive, battery-protection, and power-ORing circuits. Internally, the device uses a trench-cell structure that minimizes RDS(on) per unit silicon area while keeping gate charge Qg low, so a logic-level gate driver can switch the part at moderate PWM frequencies without excessive driver loss. The body diode supports inductive commutation, simplifying half-bridge and flyback topologies. Compared with an equivalent N-channel MOSFET, this P-channel part eliminates the bootstrap/charge-pump network required for high-side switching, reducing BOM cost and PCB area at the expense of slightly higher RDS(on) at a given die size. Typical applications include high-side load switching in 12 V / 24 V automotive and industrial systems, reverse-battery protection, DC motor reverse-polarity switching, power-ORing between redundant supplies, USB Type-C VBUS hot-swap switches, and battery management systems (BMS) charge/discharge FETs. The P-channel polarity is particularly attractive when the load sits on the low side and the supply must be switched. When designing with this device, ensure the gate drive pulls below the source by at least 10 V to fully enhance the channel and minimize conduction loss. The metal tab must be mechanically fastened to a heatsink or copper pour with thermal interface material, because at -80 A the part dissipates substantial heat even at low RDS(on). This page synthesizes distributor pricing as of 2026-09-14, drop-in TO-220-3 alternatives from the Infineon OptiMOS P-channel family, and practical design notes that complement the manufacturer datasheet rather than restate it.
SPW47N60C3 - 650V 47A CoolMOS C3 Power MOSFET | Infineon
The Infineon SPW47N60C3 is a 650V, 47A N-channel power MOSFET from the CoolMOS C3 series, housed in a TO-247-3 through-hole package. As a third-generation high-voltage superjunction device, it delivers a low specific on-state resistance (RDS(on)*A) and very low energy storage in output capacitance (Eoss at 400V), making it a benchmark 600V-class switching transistor for SMPS and motor drive topologies. A CoolMOS power transistor is a superjunction MOSFET architecture in which alternating p-type columns in the drift region compensate the electric field, breaking the silicon limit of conventional planar MOSFETs. Within the power semiconductor hierarchy, superjunction MOSFETs sit between standard planar MOSFETs and emerging SiC/GaN wide-bandgap devices, offering the best cost-per-ampere figure of merit for 500-650V applications. Key features include a 650V drain-source breakdown (V(BR)DSS), 47A continuous drain current at Tc, a typical on-state resistance of approximately 70 mΩ, and a 415W maximum power dissipation rating. The C3 platform improves switching losses versus the C2 series and supports high-frequency operation. Built-in source-connected Kelvin source pin and low gate charge (Qg) reduce driver stress. The SPW47N60C3 is engineered into PFC boost stages, LLC half-bridge converters, and three-phase inverter bridges for industrial drives. Typical use cases include server/telecom SMPS primary-side switches, solar micro-inverters, induction-heating resonant tanks, and welding inverter modules where 600V-class switching at >100kHz is required. When designing with this part, observe the avalanche rating during turn-off transients and respect the TO-247-3 thermal envelope. Use a low-inductance gate-driver layout (Kelvin connection) and add a TVS or RC snubber for high-dV/dt conditions to keep ringing below the V(BR)DSS margin.
SQ2325ES-T1 - 150V P-Ch TrenchFET MOSFET | Vishay | SOT-23
The Vishay Siliconix SQ2325ES-T1 is an automotive-grade P-Channel TrenchFET power MOSFET rated 150 V VDS and 840 mA continuous drain current, housed in a SOT-23-3 (TO-236) surface-mount package. It is qualified to AEC-Q101 and tested for 100% Rg and UIS, targeting harsh-environment switching and load-management circuits. A P-Channel MOSFET is a voltage-controlled device in which a negative gate-source voltage (relative to the source) creates a conducting channel between drain and source. As a member of the TrenchFET family, the SQ2325ES-T1 uses a vertical trench-gate cell pitch (sub-micron) that dramatically reduces on-resistance per unit silicon area compared with legacy planar P-Channel devices. The P-Channel topology sits within the broader taxonomy of enhancement-mode MOSFETs, which themselves belong to the power-MOSFET category of discrete semiconductors used for switching and amplification in power management, motor drive, and analog signal-path applications. Key features of the SQ2325ES-T1 include: 150 V drain-source breakdown voltage (V(BR)DSS), 840 mA continuous drain current (ID) at TC, 3 W power dissipation (PD) at TC, and a typical SOT-23-3 (TO-236) footprint with the standard JEDEC pinout (Pin 1 Gate, Pin 2 Source, Pin 3 Drain). The TrenchFET Gen-IV-style process delivers low on-resistance for the voltage class, and the device is rated to operate across -55 C to +175 C junction temperature, matching automotive under-hood requirements. The -T1 suffix denotes 7-inch tape-and-reel packaging, while the -GE3 suffix denotes lead-free (Pb-free) and RoHS-compliant terminal finish. Typical applications for the SQ2325ES-T1 include high-side and low-side load switching in automotive body electronics (lighting, HVAC valves, mirror fold), battery protection and reverse-polarity blocking in 12 V/24 V systems, level-shifters and high-side drivers for MCU GPIO, hot-swap insertion circuits, and small-signal analog switches in instrumentation. Its 150 V rating provides substantial headroom over the 12 V and 24 V automotive buses, with ample margin for inductive load transients. Designers should keep in mind that the SOT-23-3 thermal pad is the drain terminal; PCB copper area connected to the drain pad is the primary heat-dissipation path. For continuous operation above ~500 mA, recommend at least 1 square inch of 2-oz copper on the drain pad to keep junction temperature within safe limits. This page consolidates distributor pricing, qualified drop-in alternatives, and engineering design guidance that augments the manufacturer datasheet.
SQ2325ES-T1_GE3 - P-Ch 150V 840mA AEC-Q101 MOSFET | Texas Instruments
The Vishay Siliconix SQ2325ES-T1_GE3 is an automotive-grade P-Channel TrenchFET power MOSFET rated at 150 V drain-to-source voltage, 840 mA continuous drain current (Tc), and 3 W power dissipation (Tc), housed in a SOT-23-3 (TO-236) surface-mount package. As part of Vishay's SQ automotive MOSFET family, it is AEC-Q101 qualified and 100 % tested for Rg (gate resistance) and UIS (unclamped inductive switching) ruggedness, ensuring reliable operation under harsh electrical and thermal stress. A P-Channel MOSFET is a type of field-effect transistor where the conducting channel is formed by holes rather than electrons; it is activated by pulling the gate voltage below the source potential. P-Channel devices belong to the broader MOSFET family, which sits under discrete semiconductors in power-management and load-switching hierarchies. They are commonly used for high-side switching because, when the gate is grounded, the device turns on and pulls the load to the negative rail, simplifying drive circuitry in systems with a positive supply. Key features include 150 V VDS breakdown voltage, 840 mA continuous drain current at 25 °C case temperature, low on-resistance typical of Vishay TrenchFET silicon, and halogen-free construction per IEC 61249-2-21. The SOT-23-3 footprint keeps board area to roughly 4 mm² while still providing sufficient thermal dissipation for low-to-moderate power switching. Gate threshold voltage is specified to drive directly from logic-level signals or simple microcontroller GPIO outputs, depending on variant. Architecturally, the SQ2325ES uses Vishay's TrenchFET® vertical trench-gate process, which reduces specific on-resistance (RDS(on) × area) by concentrating the channel along a vertical trench sidewall rather than on the wafer surface. This yields lower conduction losses per unit silicon area compared with older planar P-Channel processes. The AEC-Q101 qualification and 100 % UIS testing make the part especially suited to automotive load-dump and inductive-load environments. Typical applications include automotive load switching, high-side power management in 12 V / 24 V systems, reverse-battery protection, level shifting, and general low-power switching where a small-footprint P-Channel device is required. It can also serve as a power-ORing element or as a bootstrap switch in half-bridge driver circuits. When designing with this part, ensure that the gate-to-source voltage stays within the absolute maximum rating (typically ±20 V) and that switching losses are kept within the package's thermal limits. The SOT-23-3 package relies on the drain tab (pin 3) for primary heat dissipation, so adequate copper area on the drain pad is essential for thermal performance. This page synthesizes distributor pricing, AEC-Q101 qualification status, drop-in equivalents, and practical design notes that go beyond the manufacturer datasheet's spec table.