BSC100N10NSFGATMA1 vs BSC265N10LSFGATMA1 비교
다음의 상세 나란히 비교: BSC100N10NSFGATMA1 제조: Infineon 및 BSC265N10LSFGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 활성Infineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ 활성사양 비교
| 파라미터 | BSC100N10NSFGATMA1 | BSC265N10LSFGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.49 | $0.72 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | OptiMOS 2 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 2 (TrenchFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min] |
| 패키지 | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| RoHS 상태 | Compliant | Compliant |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | 6.5 A |
| Power Dissipation (PD, Tc) | — | 78 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |