BSC100N10NSFGATMA1 vs BSC265N10LSFGATMA1 Comparison
Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC265N10LSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ ActiveInfineon
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
BSC265N10LSFGATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC100N10NSFGATMA1 | BSC265N10LSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | OptiMOS 2 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 2 (TrenchFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical/min] |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID, Tc) | — | 40 A |
| Continuous Drain Current (ID, Ta) | — | 6.5 A |
| Power Dissipation (PD, Tc) | — | 78 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typical] |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |