IPD031N06L3GATMA1 vs IPD90N03S4L02ATMA1 비교
다음의 상세 나란히 비교: IPD031N06L3GATMA1 제조: Infineon 및 IPD90N03S4L02ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ 활성사양 비교
| 파라미터 | IPD031N06L3GATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.48 | $0.58 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-to-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | [DATA_NEEDED: typical value] |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| 동작 온도 범위 | -55°C to +175°C | — |
| 패키지 | PG-TO252-3 (DPAK) | PG-TO252-3-11 (DPAK, surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | OptiMOS-T2 |
| MSL 레벨 | 1 (Unlimited) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| RoHS 상태 | Compliant | Compliant (Green Package) |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| RDS(on) Max at VGS=10 V | — | 2.2 mΩ |
| RDS(on) Max at VGS=4.5 V | — | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | — | 4.5 V to 10 V |
| 동작 접합 온도 | — | -55°C to +175°C |
| Avalanche Rated | — | 100% Avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |