IRS2101STRPBF vs IR2101STRPBF 비교

다음의 상세 나란히 비교: IRS2101STRPBF 제조: Infineon 및 IR2101STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2101STRPBF IR2101STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $0.68
Driver Type High-Side, Low-Side (Half-Bridge) Non-Inverting
Number of Drivers 2 2
출력 수 2-OUT —
출력 구성 Non-Inverting —
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V / 5 V / 15 V CMOS/LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
동작 온도 -40C to +125C -40 C to +125 C
패키지 8-SOIC (SOIC-8) 8-SOIC (0.154 inch, 3.90 mm Width)
실장 유형 Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
RoHS 상태 Compliant (PBF suffix) Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL 레벨 — MSL 3

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