IRS2101STRPBF vs IR2101STRPBF 对比

详细并排对比 IRS2101STRPBF 出自 Infineon 和 IR2101STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRS2101STRPBF IR2101STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.68
Driver Type High-Side, Low-Side (Half-Bridge) Non-Inverting
Number of Drivers 2 2
输出数量 2-OUT —
输出配置 Non-Inverting —
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V / 5 V / 15 V CMOS/LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
工作温度 -40C to +125C -40 C to +125 C
封装 8-SOIC (SOIC-8) 8-SOIC (0.154 inch, 3.90 mm Width)
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
RoHS 状态 Compliant (PBF suffix) Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL 等级 — MSL 3

数据手册与资源

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