IRS2101STRPBF vs IR2101STRPBF Vergleich

Detaillierter Direktvergleich von IRS2101STRPBF von Infineon und IR2101STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRS2101STRPBF IR2101STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,18 $0,68
Driver Type High-Side, Low-Side (Half-Bridge) Non-Inverting
Number of Drivers 2 2
Anzahl der Ausgänge 2-OUT —
Ausgangskonfiguration Non-Inverting —
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V / 5 V / 15 V CMOS/LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
Betriebstemperatur -40C to +125C -40 C to +125 C
Gehäuse 8-SOIC (SOIC-8) 8-SOIC (0.154 inch, 3.90 mm Width)
Montageart Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
RoHS-Status Compliant (PBF suffix) Compliant
Configuration — Half-Bridge (High-Side and Low-Side), Independent
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
MSL-Level — MSL 3

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