BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
부품 번호: BSC042NE7NS3GATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.7 | $2.70 |
| 10 | $2.43 | $24.30 |
| 100 | $1.95 | $195.00 |
| 500 | $1.61 | $805.00 |
| 1,000 | $1.33 | $1,330.00 |
| 2,000 | $1.24 | $2,480.00 |
BSC042NE7NS3GATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. The OptiMOS 3 family represents Infineon's third-generation trench MOSFET platform optimized for low conduction loss and fast switching; it sits within the broader taxonomy of power MOSFET -> discrete semiconductor -> power management. This category is the workhorse of modern DC-DC conversion, motor drive, and hot-swap circuits, where every milliohm of RDS(on) translates directly into watts of conduction loss dissipated as heat.
Key electrical characteristics include 4.2 mOhm max RDS(on) at VGS=10V, 75V drain-source breakdown voltage, 19A continuous drain current at ambient (Ta) and 100A at case temperature (Tc), with 2.5W (Ta) and 125W (Tc) power dissipation ratings. The gate threshold is typically 1.7V with VGS ratings of +/-20V maximum. The part integrates an intrinsic body diode optimized for synchronous rectification dead-time conduction, eliminating the need for an external anti-parallel diode in most buck/boost topologies.
Architecturally, the device uses Infineon's advanced 80V trench technology shrunk to a 75V rating, delivering simultaneously lowest on-state resistance and superior switching performance. The cell density and gate structure minimize both conduction and switching losses, making it ideal for high-frequency (300 kHz to 1 MHz) SMPS applications. The PG-TDSON-8-1 package provides an exposed drain pad that doubles as the thermal dissipation path, enabling low thermal resistance (approximately 1.0 C/W junction-to-case).
Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, high-current buck regulators in computing and graphics cards, motor drive and H-bridge circuits, hot-swap and OR-ing controllers in redundant power systems, and battery management for e-mobility and power tools. The wide safe operating area also suits Class-D audio amplifier output stages.
When designing with this MOSFET, place the gate driver within 5mm of the gate pin to minimize parasitic inductance, and use a 10 ohm gate resistor to control ringing. Ensure Tj stays below 150C by sizing the PCB copper pour; at 100A continuous, even 4.2 mOhm dissipates 42W that must flow through the exposed pad into the PCB heatsink.
This page synthesizes Infineon datasheet parameters, distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: BSC042NE7NS3GATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSC042NE7NS3GATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Temperature Range, Continuous Drain Current (ID) at Ta, Drain-Source Voltage (VDS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSC036NE7NS3GATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →BSC047N08NS3GATMA1
✅ 드롭인✓ 재고 있음
$0.46 / 개
데이터시트 보기 →BSC0902NSATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →BSC123N08NS3GATMA1
✅ 드롭인✓ 재고 있음
$0.71 / 개
데이터시트 보기 →BSC077N12NS3GATMA1
✅ 드롭인✓ 재고 있음
$0.71 / 개
데이터시트 보기 →IPB107N20N3GATMA1
✅ 드롭인✓ 재고 있음
$1.18 / 개
데이터시트 보기 →BSC042NE7NS3GATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 |
| 트랜지스터 유형 | N-Channel MOSFET |
| Technology | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) at Ta | 19 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| RDS(on) max at VGS=10V | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 125 W |
| 동작 온도 범위 | -55C to +150C |
| 패키지 | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 |
| RoHS 상태 | Compliant |
BSC042NE7NS3GATMA1 핀 구성
| 핀 1 | Gate — Gate drive input (VGS) |
| 핀 2 | Source — Source terminal (low-side reference) |
| 핀 3 | Source — Source terminal |
| 핀 4 | Source — Source terminal |
| 핀 5 | Source — Source terminal |
| 핀 6 | Source — Source terminal |
| 핀 7 | Source — Source terminal |
| 핀 8 | Source — Source terminal |
| 핀 Pad | Drain — Drain terminal (exposed thermal pad on bottom) |
안전 동작 영역 (DC, Tcase=25C)
일반적인 애플리케이션
BSC042NE7NS3GATMA1 적합 용도: 7 애플리케이션s: 48V Telecom Synchronous Rectification, Server and Datacenter DC-DC Converters, Industrial Motor Drive and H-Bridge, E-Mobility and Battery Management, Hot-Swap and OR-ing Controllers, Class-D Audio Amplifier Output Stage, Solar Microinverter and MPPT Stage.
48V Telecom Synchronous Rectification
The BSC042NE7NS3GATMA1 is purpose-built for synchronous rectification in 48V telecom bus converters where its 75V VDS rating provides margin above the 48V nominal (and below the 80V transient limit specified by ETSI EN 300 132-2). The 4.2 mOhm RDS(on) minimizes conduction loss at 30-60A output currents, while the optimized body diode enables reliable dead-time conduction in half-bridge and full-bridge LLC topologies. At 100 kHz switching with 50% duty cycle, the part dissipates significantly less than 80V competitors, allowing higher power density in 1U rectifier shelves where every watt of MOSFET loss reduces the budget for cooling fans.
추천
Server and Datacenter DC-DC Converters
In server VR (voltage regulator) applications powering multi-core CPUs, GPUs, and ASICs from 48V inputs, the BSC042NE7NS3GATMA1 serves as the primary-side switch in buck-derived topologies such as the 4-to-1 LLC and current-doubler. The 100A continuous current capability at Tc handles the high step-down ratios required for 12V intermediate bus conversion, while the low 4.2 mOhm RDS(on) keeps efficiency above 97% at full load. Hyperscale operators care about every 0.1% efficiency improvement; this part's OptiMOS 3 figure-of-merit (RDS(on) * Qg) outperforms many earlier-generation 80V MOSFETs.
추천
Industrial Motor Drive and H-Bridge
The BSC042NE7NS3GATMA1 enables compact H-bridge motor drives for 24V and 48V brushless DC (BLDC) motors used in industrial automation, robotics, and AGV applications. Its 75V VDS accommodates back-EMF spikes up to 4x the supply rail typical of trapezoidal commutation, while the 100A pulsed rating handles motor inrush and stall currents. Designers often pair this MOSFET with the Infineon IRS2184STRPBF or 2ED2183S06FXUMA1 gate driver for robust switching at 20-50 kHz PWM frequencies. The PG-TDSON-8-1 exposed pad simplifies thermal management in space-constrained IPM (intelligent power module) designs.
추천
E-Mobility and Battery Management
In 36V to 48V e-mobility systems including e-bikes, e-scooters, and power tools, the BSC042NE7NS3GATMA1 serves as the high-side and low-side switch in battery pack discharge management and active balancing circuits. The 4.2 mOhm RDS(on) keeps I2R losses manageable during peak discharge currents of 50-100A, preserving battery run-time. The 75V rating handles pack overvoltage transients up to 60V (15S Li-ion at full charge) with comfortable margin. Compact PG-TDSON-8-1 packaging enables high power density in battery-mounted BMS PCBs where space and weight are at a premium.
추천
Hot-Swap and OR-ing Controllers
The BSC042NE7NS3GATMA1 functions as the main pass-MOSFET in 48V hot-swap and OR-ing controllers used in redundant telecom and server power architectures. Its 75V VDS rating handles 48V nominal with margin for transients up to 72V (ETSI), while 100A continuous current capability supports full-power bus distribution. The low RDS(on) minimizes steady-state voltage drop across the OR-ing FET, critical for minimizing power dissipation in dual-feed server backplanes. Designers use this part in conjunction with hot-swap controllers like the LTC4215 or LM25061 for inrush current limiting and fault isolation.
추천
Class-D Audio Amplifier Output Stage
In high-power Class-D audio amplifiers delivering 500W to 2 kW per channel, the BSC042NE7NS3GATMA1 serves as the output half-bridge switch in 48V rail designs. The 75V VDS handles 48V rail with comfortable margin for inductive kickback from the LC output filter, while the 4.2 mOhm RDS(on) achieves amplifier efficiency above 95%, minimizing heat dissipation and enabling smaller enclosures. Low output capacitance (Coss) of the OptiMOS 3 family reduces dead-time distortion, preserving audio fidelity. The part pairs well with IRS2153DSPBF self-oscillating gate drivers in compact Class-D modules.
추천
Solar Microinverter and MPPT Stage
The BSC042NE7NS3GATMA1 operates as the primary-side switch in 60V solar microinverters and maximum power point tracking (MPPT) converters. The 75V VDS rating accommodates 60V solar panel open-circuit voltage (Voc) at cold temperature extremes (below -10C), when Voc can rise 15-20% above standard test conditions. With 4.2 mOhm RDS(on) and 100A capability, it handles the 30-50A MPPT currents typical of 1-2 kW residential microinverters. The OptiMOS 3 technology's low reverse recovery charge (Qrr) reduces switching loss in CCM boost topologies.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSC042NE7NS3GATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSC036NE7NS3GATMA1 | BSC047N08NS3GATMA1 | BSC0902NSATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| VDS (V) | 75 | 75 | 80 | 75 | 75 |
| RDS(on) max at VGS=10V (mOhm) | 4.2 | 3.6 | 4.7 | 9.0 | 12.3 |
| Continuous ID at Tc (A) | 100 | 100 | 100 | 60 | 50 |
| Power Dissipation at Tc (W) | 125 | 125 | 125 | 100 | 83 |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 2 | OptiMOS 3 |
| Gate Threshold VGS(th) typ (V) | 1.7 | 1.7 | 1.7 | 2.0 | 1.7 |
주요 차별점
- Lower RDS(on) at 75V than competing 80V MOSFETs (vs BSC047N08NS3GATMA1)
- Higher current capability than cost-down versions (vs BSC123N08NS3GATMA1)
- Lower RDS(on) than 120V-class MOSFETs in same package (vs BSC077N12NS3GATMA1)
- Industry-standard OptiMOS 3 figure-of-merit (vs BSC0902NSATMA1)
설계 노트
Estimated: at 100A continuous drain current, the BSC042NE7NS3GATMA1 dissipates approximately 42W (I2 * R = 100 * 100 * 0.0042). The PG-TDSON-8-1 package has junction-to-case thermal resistance (theta_JC) of approximately 1.0 C/W, meaning the silicon junction rises 42C above the exposed pad temperature. The exposed pad must be soldered to a PCB copper pour of at least 1 square inch (645 mm2) of 2 oz copper on both sides to keep junction temperature below 150C. Without adequate copper, expect 30-50% reduction in usable current capacity.
Keep the gate drive loop area as small as possible - place the gate driver IC within 5mm of the gate pin (pin 1) to minimize parasitic inductance that causes gate ringing and potential avalanche. Use a 10 ohm gate resistor with split turn-on/turn-off values if switching losses are critical; the gate charge (Qg) of the OptiMOS 3 part requires careful driver selection. The source pins (2-8) must all be soldered to a low-impedance ground plane; floating source pins increase on-resistance and cause thermal runaway.
Do not exceed VGS ratings of +/-20V - transients beyond 20V can permanently damage the thin gate oxide. Add a 10V Zener diode from gate to source if using unregulated supplies. Avoid operating in linear mode for more than microseconds; sustained operation in the active region (VDS between 1V and VDS(max)) causes rapid thermal failure. Use a gate-source resistor (10k to 100k) to ensure the MOSFET stays off when the gate driver is tri-stated during power-up.
Recommended PCB land pattern follows IPC-7351 SuperSO8 (5x6 mm) guidelines with a central thermal pad of approximately 3.5x4.5 mm. Use thermal vias (12-16 vias, 0.3 mm diameter) under the drain pad to conduct heat to inner copper layers. For high-current (>50A) applications, use 2 oz copper on outer layers and 1 oz on inner layers to minimize trace resistance, which can add several milliohms and erode the low-RDS(on) advantage.
규정 준수 정보
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - select automotive-qualified OptiMOS variants for automotive applications. Lead-free and halogen-free per PG-TDSON-8-1 material declaration.
