BSO220N03MDGXUMA1 - 30V Dual N-Ch MOSFET 7.7A | Infineon
부품 번호: BSO220N03MDGXUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.62 | $6.20 |
| 100 | $0.42 | $42.00 |
| 500 | $0.33 | $165.00 |
| 1,000 | $0.27 | $270.00 |
| 2,500 | $0.24 | $600.00 |
BSO220N03MDGXUMA1 개요
A dual N-channel MOSFET array is a single-package device containing two independently controlled N-channel enhancement-mode MOSFETs. These arrays are commonly used in synchronous buck converters, half-bridge drivers, and bidirectional load switches where the PCB real estate of two discrete SOT-23 or smaller SO-8 MOSFETs would be prohibitive. The dual-FET SO-8 package simplifies layout, reduces parasitic loop inductance, and minimizes gate-drive trace lengths compared with two separate parts, which is critical in high-frequency switching applications where every nanohenry of stray inductance degrades efficiency and switching speed.
Key features include a 30V drain-source breakdown voltage suitable for 12V bus systems with transient headroom, 22 mΩ maximum R_DS(on) at 10V V_GS that drops significantly at 4.5V V_GS for logic-level drive compatibility, and a low gate charge (Q_G) that minimizes driver losses. The OptiMOS™ 3M process delivers excellent figure-of-merit (FOM = R_DS(on) × Q_G) and provides robust avalanche capability. The PG-DSO-8 package has a thermally enhanced exposed pad that reduces junction-to-ambient thermal resistance, allowing sustained operation at full rated current when the PCB copper area is adequate.
Typical applications include synchronous buck converters in servers and datacom equipment, point-of-load (POL) regulators on telecom boards, high-side/low-side motor drive half-bridges, battery management and protection circuits in portable equipment, and load switches in industrial 24V systems. The 30V rating provides comfortable margin for 12V rails with inductive spikes, and the dual configuration simplifies synchronous rectifier layouts.
When designing with this part, ensure the exposed pad receives sufficient copper area (recommended at least 1 square inch on a 4-layer board) to keep junction temperature within safe limits. Use a gate resistor of 10Ω-47Ω to dampen ringing, and place the bootstrap capacitor close to the high-side gate-drive pin in half-bridge configurations to avoid shoot-through.
드롭인 대체품: BSO220N03MDGXUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSO220N03MDGXUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Manufacturer, MSL Level, Operating Junction Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSO220N03MD G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSZ031NE2LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.26 / 개
데이터시트 보기 →BSC0501NSIATMA1
✅ 드롭인✓ 재고 있음
$0.65 / 개
데이터시트 보기 →BSC0502NSIATMA1
✅ 드롭인✓ 재고 있음
$0.85 / 개
데이터시트 보기 →VBA3328
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSO220N03MDGXUMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 3M |
| Configuration | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | 30 V |
| Continuous Drain Current (I_D) | 7.7 A |
| On-State Resistance (R_DS(on)) | 22 mΩ max @ V_GS=10V |
| Power Dissipation (P_D) | 1.4 W |
| 동작 온도 범위 | -55C to +150C (junction) |
| 패키지 | PG-DSO-8 (SO-8 with exposed pad) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 (unlimited) |
| RoHS 상태 | Compliant |
| Technology | OptiMOS™ 3M (Trench MOSFET) |
| Avalanche Rated | Yes |
BSO220N03MDGXUMA1 핀 구성
| 핀 1 | G1 — Gate of MOSFET 1 |
| 핀 2 | D1 — Drain of MOSFET 1 (internally connected to pin 3) |
| 핀 3 | S1 — Source of MOSFET 1 |
| 핀 4 | NC — Not connected (per datasheet; thermal pad pin) |
| 핀 5 | NC — Not connected (per datasheet; thermal pad pin) |
| 핀 6 | S2 — Source of MOSFET 2 |
| 핀 7 | D2 — Drain of MOSFET 2 (internally connected to pin 8) |
| 핀 8 | G2 — Gate of MOSFET 2 |
| 핀 EP | Thermal Pad — Exposed thermal pad (electrically connected to pin 4/5 NC internally per Infineon PG-DSO-8 convention; solder to PCB copper for heatsinking) |
BSO220N03MDGXUMA1 안전 동작 영역
일반적인 애플리케이션
BSO220N03MDGXUMA1 적합 용도: 6 애플리케이션s: Synchronous Buck Converter (12V POL), Server and Datacom Voltage Regulator, Half-Bridge Motor Driver (Low-Voltage BLDC), Battery Management and Protection (12V-24V Packs), Hot-Swap and Load Switch (12V Rails), Bidirectional DC-DC Converter.
Synchronous Buck Converter (12V POL)
The BSO220N03MDGXUMA1 fits synchronous buck point-of-load converters because both N-channel FETs in one SO-8 footprint deliver matched switching characteristics with minimal loop inductance. Each channel handles 7.7A continuous drain current at 22 mΩ R_DS(on) for high-side and low-side positions from a 12V input bus. The 30V V_DS rating comfortably absorbs 12V nominal plus transient spikes. Designers benefit from reduced PCB area versus two discrete SOT-23 FETs, and the OptiMOS™ 3M low gate charge keeps driver losses low at 500 kHz-1 MHz switching frequencies common in modern POL designs.
추천
Server and Datacom Voltage Regulator
Infineon designed the OptiMOS™ 3M family specifically for voltage regulator solutions in servers, datacom, and telecom, making the BSO220N03MDGXUMA1 a natural fit for multi-phase VRM modules driving CPUs and ASICs. Its 22 mΩ R_DS(on) at 4.5V V_GS supports direct PWM controller drive without gate-drive boost, and the dual-FET SO-8 footprint enables dense phase layouts. The 1.4W package dissipation and exposed thermal pad support continuous high-current operation with PCB copper heatsinking. Application notes recommend paralleling two SO-8 arrays per phase for 25A-30A continuous output in server VR applications.
추천
Half-Bridge Motor Driver (Low-Voltage BLDC)
The BSO220N03MDGXUMA1 dual N-channel configuration in SO-8 directly implements a half-bridge for low-voltage brushless DC motor drivers, driving one FET high-side and one FET low-side per phase. Each channel's 7.7A rating and 22 mΩ R_DS(on) suit small fans, pumps, and robotics actuators operating from 12V-24V supplies. The matched silicon of the dual array ensures symmetric switching and minimal shoot-through when driven by complementary gate signals. For full three-phase BLDC, three BSO220N03MDGXUMA1 parts occupy the same board area as six discrete MOSFETs in larger packages.
추천
Battery Management and Protection (12V-24V Packs)
The BSO220N03MDGXUMA1 protects multi-cell lithium battery packs up to 24V (8S Li-ion) by serving as a back-to-back N-channel disconnect switch with low conduction loss. Its 22 mΩ R_DS(on) per channel - effectively 44 mΩ in series back-to-back - keeps quiescent loss to a few millivolts at typical 1A-3A discharge currents. The 30V V_DS provides 6V margin above a fully-charged 24V pack, and Infineon's OptiMOS™ 3M avalanche rating ensures robust short-circuit survival. The dual-FET SO-8 footprint integrates high-side and low-side protection paths into a single compact component.
추천
Hot-Swap and Load Switch (12V Rails)
Hot-swap controllers and electronic load switches for 12V distribution use the BSO220N03MDGXUMA1 as the main pass element, with its 30V V_DS absorbing plug-in transients and its 22 mΩ R_DS(on) minimizing steady-state voltage drop. The dual independent gates allow separate control of main and precharge paths in sophisticated hot-swap designs. Each channel's 7.7A rating covers typical board-level inlet currents of 5A-6A with margin. The PG-DSO-8 exposed pad simplifies heatsinking on dense backplane designs, and the SO-8 footprint is JEDEC standard for direct PCB reuse.
추천
Bidirectional DC-DC Converter
Bidirectional 12V-to-5V or 24V-to-12V DC-DC converters for energy storage and renewable systems use the BSO220N03MDGXUMA1 in full-bridge or active-clamp topologies, exploiting its dual N-channel configuration to build compact switching legs. Each channel handles 7.7A continuous and the matched die minimizes circulating current during dead-time transitions. The 30V V_DS rating suits 12V and 24V bus systems, and the OptiMOS™ 3M low Q_G enables high-frequency operation to shrink magnetics. Two BSO220N03MDGXUMA1 parts form a complete H-bridge in a footprint smaller than discrete alternatives.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSO220N03MDGXUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSO220N03MD G | BSZ031NE2LS5ATMA1 | BSC0501NSIATMA1 | BSC0502NSIATMA1 | VBA3328 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-DSO-8 | PG-DSO-8 - same | PG-DSO-8 - same | PG-DSO-8 - same | PG-DSO-8 - same | PG-DSO-8 - same |
| Configuration | Dual N-channel | Dual N-channel | Single N-channel | Single N-channel | Single N-channel | Dual N-channel |
| Drain-Source Voltage (V_DS) | 30 V | 30 V | 25 V | 30 V | 30 V | 30 V |
| On-State Resistance (R_DS(on)) | 22 mΩ max | 22 mΩ max | 3.1 mΩ max | 5.0 mΩ max | 5.2 mΩ max | ~25 mΩ max |
| Continuous Drain Current (I_D) | 7.7 A | 7.7 A | 30 A+ (single channel) | 17 A (single channel) | 17 A (single channel) | 7.0 A |
| Technology | OptiMOS™ 3M | OptiMOS™ 3M | OptiMOS™ 2 (newer gen) | OptiMOS™ 5 | OptiMOS™ 5 | Trench (VBsemi proprietary) |
| Unit Price (qty 1000, USD) | 0.27 | 0.27 | 0.85 | 0.45 | 0.48 | 0.15 |
주요 차별점
- Genuine dual N-channel in single SO-8 footprint (vs BSC0501NSIATMA1 (single N-channel))
- Lower unit cost via Chinese-sourced alternative (vs VBA3328 (VBsemi))
- OptiMOS™ 3M proven technology platform (vs BSZ031NE2LS5ATMA1 (newer OptiMOS 2/5 family))
설계 노트
At 7.7A continuous per channel and 1.4W package dissipation, the PG-DSO-8 exposed pad must be soldered to a PCB copper pour of at least 1 square inch on a 4-layer board to keep junction temperature below 150C. Estimated: assuming theta_JA of 50 C/W on a properly designed 4-layer PCB with 1 sq-inch copper pad, the junction-to-ambient rise is 50 C/W × 1.4W = 70C, allowing operation to ~80C ambient. Without adequate copper, the part will thermally limit at significantly lower currents.
Route the high-current drain and source traces with wide copper pours (50+ mil minimum) and minimize the source-to-ground inductance for the low-side FET in synchronous buck layouts. The exposed thermal pad requires multiple thermal vias (0.3mm diameter, 1mm pitch array) under the package to conduct heat to inner copper planes. Place the gate-drive resistors within 5mm of the gate pins to suppress parasitic turn-on from dv/dt coupling.
Do not exceed V_GS of ±20V (per industry-standard 30V-class MOSFET convention) or the gate oxide will be damaged. In half-bridge applications, ensure dead-time insertion between high-side and low-side gate signals to prevent shoot-through. According to Infineon OptiMOS™ 3M datasheet guidance, the bootstrap capacitor for the high-side gate drive must be sized to supply the full gate charge plus 10% margin; undersizing causes high-side drive voltage collapse under heavy load.
In synchronous buck designs, place the input decoupling capacitor directly between the high-side drain and low-side source to minimize the high-frequency switching loop. Keep the gate-drive loop (driver output → gate → source → driver ground return) area below 0.5 sq-cm to avoid ringing and EMI issues. For dual-FET layouts, route G1/D1/S1 on one side of the package and G2/D2/S2 on the other side to maintain symmetry with the channel numbering convention of standard half-bridge drivers.
규정 준수 정보
RoHS compliant per Infineon product page. PG-DSO-8 package is MSL 1 (unlimited floor life). Not AEC-Q100 qualified - choose automotive-qualified Infineon parts for vehicle applications. Halogen-free per Infineon OptiMOS family policy.
