BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
부품 번호: BSZ900N20NS3GATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.88 | $0.88 |
| 10 | $0.79 | $7.90 |
| 100 | $0.71 | $71.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.55 | $550.00 |
| 5,000 | $0.48 | $2,400.00 |
BSZ900N20NS3GATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts power by rapidly toggling between low-resistance (on) and high-resistance (off) states. Within the power-semiconductor hierarchy it sits below IGBTs and above signal FETs, and within a switching power supply it typically performs either the high-side switch, low-side synchronous rectifier, or both. The OptiMOS 3 family specifically optimizes the figure of merit (FOM = RDS(on) × Qg) for 100V-300V rails, balancing conduction loss against switching loss in hard-switched topologies.
Key features of the BSZ900N20NS3GATMA1 include 200V VDS, 15.2A continuous ID at 25°C case temperature, 77 mΩ RDS(on) max at VGS = 10 V, integrated ESD protection, and a logic-level compatible gate drive threshold. The TDSON-8 FL package exposes the drain tab for direct PCB cooling, providing a typical RthJA of 50 C/W on a standard 1 oz copper 1 sq inch pad — sufficient for the 62.5W Tc rating without an external heatsink in typical 48V-rail applications.
The OptiMOS 3 cell architecture uses a trench-gate structure with a 200V-rated epitaxial layer, achieving low specific on-resistance while maintaining avalanche ruggedness. The part is characterized for both continuous-conduction and zero-voltage-switching (ZVS) operation, and its low Qrr supports use as a synchronous rectifier in 48V telecom bus converters, where reverse-recovery loss dominates at high switching frequencies (typically 100-300 kHz).
Typical applications include synchronous rectification in 48V systems, isolated and non-isolated DC-DC converters (full-bridge, half-bridge, and active-clamp forward topologies), uninterruptible power supplies (UPS), motor-drive inverters for DC motors, and solar micro-inverters. The 200V rating provides 30% headroom above standard 48V and 60V telecom and industrial bus voltages, allowing safe operation under transient spikes.
When designing with this device, ensure the gate-driver supply swings at least 10V for full RDS(on) rating, and place the gate-drive loop area minimal to avoid ringing. The exposed pad (drain) must be soldered to a sufficiently large copper pour (≥1 sq inch) to achieve the rated thermal performance; otherwise the device will derate well below 62.5W.
This page synthesizes Infineon datasheet specifications, distributor pricing as of 2026-09-13, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: BSZ900N20NS3GATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSZ900N20NS3GATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Drain-Source Voltage (VDS), Continuous Drain Current (ID, Tc), Operating Junction Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSZ900N20NS3G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSZ900N20NS3GATMA1 최대 정격 & 전기적 특성
| Part Number | BSZ900N20NS3GATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ |
| Typical RDS(on) @ VGS=10V | 77 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V |
| Power Dissipation (PD, Tc=25C) | 62.5 W |
| 동작 접합 온도 | -55C to +150C |
| 패키지 | PG-TSDSON-8 (TDSON-8 FL) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 (unlimited) |
| RoHS 상태 | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| ESD Protection | Yes (integrated) |
| Avalanche Energy Rated | Yes (EAS) |
BSZ900N20NS3GATMA1 핀 구성
| 핀 1 | Source — Source connection (low-side reference) |
| 핀 2 | Source — Source connection |
| 핀 3 | Source — Source connection |
| 핀 4 | Source — Source connection |
| 핀 5 | Source / Thermal Pad — Source and exposed thermal pad (drain-tab on bottom is drain) |
| 핀 6 | Gate — Gate drive input |
| 핀 7 | Drain — Drain connection (also accessible via top tab) |
| 핀 8 | Source — Source connection |
안전 동작 영역 (BSZ900N20NS3GATMA1, DC, Tc=25C)
일반적인 애플리케이션
BSZ900N20NS3GATMA1 적합 용도: 6 애플리케이션s: 48V Synchronous Rectification, Isolated DC-DC Converters, Uninterruptible Power Supplies (UPS), DC Motor Drive Inverters, Solar Micro-Inverters, Telecom Hot-Swap / ORing Controllers.
48V Synchronous Rectification
The BSZ900N20NS3GATMA1 is optimized for the low-side synchronous rectifier position in 48V bus converters. Its 77 mΩ typical RDS(on) at VGS = 10V directly reduces conduction loss in continuous-conduction mode (CCM), while the 200V VDS rating provides the 80-100V transient headroom demanded by telecom load-dump specifications. Per Infineon's datasheet, the part's low Qrr also makes it suitable for use as a freewheeling rectifier in zero-voltage-switching (ZVS) full-bridge topologies operating at 100-300 kHz, where reverse-recovery charge would otherwise dominate switching loss. Place the part on the secondary-side synchronous-rectifier footprint with a 1 sq inch exposed-pad copper pour, and drive the gate from a 10V UCC24612 or similar synchronous-rectifier controller.
추천
Isolated DC-DC Converters
In isolated DC-DC converters such as full-bridge, half-bridge, and active-clamp forward topologies, the BSZ900N20NS3GATMA1 serves as the primary-side switch when fed from a 48V-72V bus. Its 200V rating comfortably exceeds 72V nominal plus leakage-inductance spike overshoot, and the 15.2A continuous ID handles the primary-side RMS current of a 600W converter at 100 kHz. Per Infineon's datasheet, the part's avalanche-energy rating (EAS) ensures survival during load-step-induced duty-cycle excursions. The TDSON-8 exposed pad simplifies thermal management on the primary-side, where heatsinking is often impractical. Pair with a digital isolator such as the UCC21540 in the gate-drive path.
추천
Uninterruptible Power Supplies (UPS)
In online UPS inverter stages, the BSZ900N20NS3GATMA1 functions as a low-frequency (typically 20 kHz) bridge-leg switch converting rectified 48V battery bus to 120V/230V AC output. The 200V VDS rating handles the DC-bus plus transformer-leakage overshoot, and the 77 mΩ RDS(on) limits conduction loss in continuous-operation UPS systems where fans and thermal management are already constrained. Per Infineon's OptiMOS 3 datasheet, the avalanche-rugged design tolerates the high di/dt events seen during inverter short-circuit protection, making the part suitable for the demanding reliability requirements of mission-critical UPS installations. Place two BSZ900N20NS3GATMA1 in parallel per phase for higher-current 5 kVA UPS designs.
추천
DC Motor Drive Inverters
The BSZ900N20NS3GATMA1 is well-matched to low-voltage DC motor drive inverters operating from 48V-96V battery packs (forklifts, e-bikes, mobility scooters). The 200V VDS provides 2x headroom above typical 96V battery overcharge conditions, while the 15.2A continuous ID supports motors up to approximately 1.5 kW without parallel devices. Per Infineon's datasheet, the OptiMOS 3 cell structure offers low body-diode forward voltage, reducing dead-time loss in trapezoidal BLDC commutation. The TDSON-8 exposed pad enables direct PCB-mount cooling in motor-controller enclosures. Drive the gates with a 3-phase bridge-driver such as the IRF7309TRPBF for complete H-bridge inverter reference designs.
추천
Solar Micro-Inverters
In grid-tied solar micro-inverters operating from 40V-80V PV panel strings, the BSZ900N20NS3GATMA1 serves as the primary-side switch in a 2-stage topology (boost + full-bridge). The 200V VDS rating tolerates the open-circuit PV voltage at cold-temperature extremes plus resonant-ring overshoot, while the 77 mΩ RDS(on) achieves >96% conversion efficiency per Infineon's datasheet characterizations. The TDSON-8 package's small footprint suits the high-density mechanical constraints of micro-inverter enclosures. Use the part in conjunction with an interleaved PFC stage for EN50530-compliant grid-tie performance and add a heatsink if the design operates continuously at >8A output.
추천
Telecom Hot-Swap / ORing Controllers
Although primarily a switching MOSFET, the BSZ900N20NS3GATMA1's 77 mΩ RDS(on) and 200V VDS make it suitable for high-side ORing switches in 48V telecom rectifier-redundant power systems. Per Infineon's OptiMOS 3 datasheet, the part's fast body-diode and low Qrr minimize reverse-current transients during source-switchover events. The 15.2A continuous ID handles typical 48V/600W rectifier outputs, and the TDSON-8 footprint integrates cleanly onto the ORing-controller daughtercard. Gate-drive via a dedicated ORing controller such as the LTC4359 ensures fast turn-off during fault conditions and prevents reverse-current-induced MOSFET failure.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSZ900N20NS3GATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSZ900N20NS3G | IPD320N20N3GATMA1 |
|---|---|---|---|
| Package | PG-TSDSON-8 (TDSON-8 FL) | PG-TSDSON-8 (TDSON-8 FL) - same | PG-TO252-3 (DPAK) - different |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same |
| VDS (Drain-Source Voltage) | 200 V | 200 V | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | 15.2 A | 34 A |
| RDS(on) max @ VGS=10V | 90 mΩ | 90 mΩ | 32 mΩ |
| Power Dissipation (Tc=25C) | 62.5 W | 62.5 W | 136 W |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
주요 차별점
- Lowest RDS(on) in TDSON-8 200V class (vs IPD320N20N3GATMA1)
- OptiMOS 3 trench technology for low FOM (vs Older planar 200V MOSFETs)
- Same-brand pin-compatible ordering flexibility (vs Cross-brand equivalents)
설계 노트
Estimated: at PD = 4 W (e.g., 15 A × 0.27 V across the FET), the BSZ900N20NS3GATMA1 in TDSON-8 with a 1 sq inch 1 oz copper pad typically achieves RthJA ≈ 50 C/W, yielding a junction temperature rise of roughly 200C above ambient. To stay below the 150C maximum junction rating at 25C ambient, limit steady-state dissipation to approximately 2.5 W, or use larger copper area / forced airflow. A small clip-on heatsink (e.g., Aavid 577002B00000G) reduces RthJA to roughly 25 C/W and doubles continuous dissipation capacity.
Minimize the high-current loop area between the drain tab, transformer secondary, and source pins to reduce parasitic inductance and switching-node ringing. Place the gate-drive bypass capacitor (≥1 µF ceramic) within 5 mm of the gate pin (pin 6), and route the gate trace over a continuous ground plane to avoid capacitive coupling to the drain tab. Per Infineon's TDSON-8 application notes, the source pins (1-4, 8) should all be soldered and stitched to a single ground pour to maximize heat extraction from the bottom-exposed drain pad.
Do not exceed VGS = ±20 V (per Infineon absolute maximum ratings); gate-overshoot from a poorly damped gate-drive loop can punch through the gate oxide. Ensure the synchronous-rectifier dead-time is long enough to prevent cross-conduction but short enough to limit body-diode conduction loss — for the BSZ900N20NS3GATMA1's body diode, target dead times of 50-200 ns depending on switching frequency. Finally, verify that the avalanche-energy (EAS) rating is not exceeded during output-voltage OVP events by adding a TVS clamp on the secondary winding.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — choose an automotive-grade part (e.g., IAUC100N10S5N040ATMA1 family) for vehicle applications. Halogen-free per Infineon OptiMOS 3 family datasheet.
