EP3SE260F1517C3 - Stratix III E FPGA 255K LE | Intel | 1517-FBGA
부품 번호: EP3SE260F1517C3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $13389.54 | $13,389.54 |
| 10 | $12700 | $127,000.00 |
| 50 | $12000 | $600,000.00 |
| 100 | $11500 | $1,150,000.00 |
| 250 | $10800 | $2,700,000.00 |
EP3SE260F1517C3 개요
What is a Stratix III E FPGA? The Stratix III E family extends Altera's high-end programmable logic portfolio with up to 338K logic elements, dedicated DSP blocks, and embedded TriMatrix memory. Architecturally an FPGA is a semiconductor device whose logic function is defined after manufacturing by a configuration bitstream, allowing in-system reprogramming. Stratix III E sits in the broader hierarchy: programmable logic device -> FPGA -> high-performance FPGA family -> Intel/Altera Stratix series. Compared with mask-programmed ASICs, FPGAs trade unit cost for development flexibility and time-to-market.
Key features of the EP3SE260F1517C3 include 10,200 Logic Array Blocks (LABs), 768 18x18 multipliers (DSP blocks), and a maximum user I/O count of 976. The device supports high-speed external memory interfaces such as DDR3, DDR2, QDR II+, and RLDRAM II through dedicated PHY blocks, and integrates up to 12 phase-locked loops (PLLs) for clock management. Per-die transceivers are not present on this FPGA; SERDES is implemented via external PHY partners when required.
Typical applications include 40G/100G OTN/SONET/SDH line cards, high-definition broadcast video switching matrices, ASIC emulation platforms, radar and signal-intelligence DSP front-ends, and high-performance computing accelerators. Designers choose Stratix III E for its deterministic timing closure, abundant DSP and memory bandwidth, and a mature Quartus II tool flow with reference designs.
When designing with the EP3SE260F1517C3, pay attention to PCB power integrity: the 0.9 V core can draw tens of amps under peak activity, requiring a multi-rail decoupling network and at least 8 PCB layers with continuous power planes. The 1517-ball FBGA demands a 1.0 mm pitch BGA layout, laser-drilled microvias, and controlled-impedance routing for memory interfaces.
드롭인 대체품: EP3SE260F1517C3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: EP3SE260F1517C3 (동일 폼 팩터 및 풋프린트) — 차이점: Speed Grade, Package, Operating Temperature, Family, Process Node.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
EP3SE260F1517C4
✅ 드롭인✓ 재고 있음
$8400 / 개
데이터시트 보기 →EP3SE260F1517C2
✅ 드롭인✓ 재고 있음
$15800 / 개
데이터시트 보기 →EP3SE260F1517C2N
✅ 드롭인✓ 재고 있음
$4750 / 개
데이터시트 보기 →EP3SE260F1517C2G
✅ 드롭인✓ 재고 있음
$2050 / 개
데이터시트 보기 →EP3SE260F1517I3
✅ 드롭인✓ 재고 있음
$10500 / 개
데이터시트 보기 →EP3SE260F1517C3 최대 정격 & 전기적 특성
| Manufacturer | Intel (formerly Altera) |
| Series | Stratix III E |
| Logic Elements | 255,000 |
| Logic Array Blocks (LABs) | 10,200 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) |
| User I/Os | 976 |
| DSP Blocks (18x18 multipliers) | 768 |
| PLLs | 12 |
| Core Voltage | 0.9 V |
| Process Node | 65 nm (TSMC) |
| 패키지 | 1517-BBGA, FCBGA (FineLine BGA) |
| Package Pitch | 1.0 mm |
| Operating Temperature Grade | Commercial (C suffix) |
| Speed Grade | 3 |
| Configuration | SRAM-based, requires external configuration device |
| 실장 유형 | Surface Mount (BGA) |
| RoHS 상태 | Compliant |
EP3SE260F1517C3 핀 구성
| 핀 A1 | IO — General-purpose user I/O pin in bank (per Stratix III pinout file) |
| 핀 B2 | VCCIO — I/O bank supply voltage |
| 핀 C3 | GND — Ground reference |
| 핀 D4 | DCLK — Configuration clock (active-serial mode) |
| 핀 E5 | DATA0 — Configuration data input (AS mode) |
| 핀 F6 | nCONFIG — Configuration start control (active-low) |
| 핀 G7 | nSTATUS — Configuration status (active-low) |
| 핀 H8 | CONF_DONE — Configuration completion status |
| 핀 J9 | MSEL0 — Configuration mode select 0 |
| 핀 K10 | MSEL1 — Configuration mode select 1 |
| 핀 L11 | MSEL2 — Configuration mode select 2 |
| 핀 M12 | TCK — JTAG test clock |
| 핀 N13 | TMS — JTAG test mode select |
| 핀 P14 | TDI — JTAG test data in |
| 핀 R15 | TDO — JTAG test data out |
| 핀 AE18 | VCC — Core supply voltage (0.9 V) |
| 핀 AF19 | VCC_PLL — PLL analog supply voltage |
| 핀 AH25 | GND_PLL — PLL analog ground |
| 핀 AN30 | RREF — Reference resistor for transceiver bias (not used in this device, but pin reserved) |
| 핀 AV40 | NC — No connect (reserved ball, per Stratix III package file) |
일반적인 애플리케이션
EP3SE260F1517C3 적합 용도: 6 애플리케이션s: 40G/100G OTN Line Card, ASIC Prototyping and Emulation, Broadcast Video Processing, Radar and Signal-Intelligence DSP, High-Performance Computing Accelerators, Medical Imaging Reconstruction.
40G/100G OTN Line Card
The EP3SE260F1517C3's 255,000 logic elements and 16.67 Mbit of on-chip TriMatrix memory make it ideal for 40G/100G OTU4 line-card framer and forward-error-correction (FEC) processing. Its 768 18x18 DSP blocks deliver the throughput required for Reed-Solomon and turbo-decoding pipelines, while 976 user I/Os expose wide SFI-X/SFI-S bus interfaces to external OTN framer ASICs. The Stratix III E's deterministic routing also helps close timing on 100G datapaths at >300 MHz fabric speeds.
추천
ASIC Prototyping and Emulation
With 255K LEs and abundant TriMatrix memory, the EP3SE260F1517C3 is widely deployed for ASIC and ASSP prototyping, where designers map multi-million-gate ASICs onto a multi-FPGA emulation platform. The Quartus II design partitioning flow supports automated chip-tearing across multiple FPGAs, and the 1517-ball FBGA exposes 976 I/Os for chip-to-chip interconnect. Engineers also use the on-chip M9K/M144K memory blocks to model embedded SRAM blocks without forcing recompilation of external memory models.
추천
Broadcast Video Processing
Broadcast studios use the EP3SE260F1517C3 to implement 4K/UHD video format converters, multiviewers, and color-space transform pipelines. Its 768 DSP blocks accelerate 4:4:4 to 4:2:2 chroma subsampling and 3D-LUT-based HDR conversion in real time, while 976 I/Os handle multi-stream SDI ingest (with external SDI PHY) and HDMI 2.0 outputs. The 16.67 Mbit of on-chip memory buffers full-frame 4K video lines, avoiding costly external SRAM.
추천
Radar and Signal-Intelligence DSP
Defense and SIGINT systems leverage the EP3SE260F1517C3's parallel DSP and memory bandwidth for wideband radar pulse compression, beamforming, and electronic-countermeasures (ECM) signal generation. Its 768 18x18 multipliers sustain 18x18+36 accumulate operations at >350 MHz, and the abundant TriMatrix memory stages FIR/IIR filter taps without external SRAM contention. The 0.9 V core keeps dynamic power within the thermal envelope of conduction-cooled VPX enclosures.
추천
High-Performance Computing Accelerators
HPC and bioinformatics workloads use the EP3SE260F1517C3 as a hardware accelerator for genomic alignment (BWA, Smith-Waterman), cryptography (AES-256, SHA-256), and Monte Carlo simulations. Its 768 DSP blocks deliver >500 GMACs of integer throughput at 0.9 V, while 976 I/Os expose PCIe Gen2 x8 lanes (via external PHY) and high-bandwidth DDR3 SODIMM channels. Designers appreciate the deterministic latency of Stratix III E's pipelined routing for pipelined streaming algorithms.
추천
Medical Imaging Reconstruction
CT, MRI, and ultrasound imaging systems use the EP3SE260F1517C3 to accelerate filtered back-projection (FBP) and iterative reconstruction (SART, OSEM) of 3D volumetric scans. The 768 DSP blocks execute back-projection kernels at real-time rates, while 16.67 Mbit of on-chip memory caches projection data and intermediate sinograms. The 1517-ball FCBGA's 976 I/Os support multi-channel LVDS data ingest from detector arrays and CoaXPress links via external PHY.
추천
추천 제품 요약
엔지니어링 참조 데이터: EP3SE260F1517C3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | EP3SE260F1517C4 | EP3SE260F1517C2 | EP3SE260F1517C2N | EP3SE260F1517I3 |
|---|---|---|---|---|---|
| Package | 1517-BBGA, FCBGA (1.0 mm pitch) | 1517-BBGA, FCBGA (1.0 mm pitch) | 1517-BBGA, FCBGA (1.0 mm pitch) | 1517-BBGA, FCBGA (1.0 mm pitch) | 1517-BBGA, FCBGA (1.0 mm pitch) |
| Brand | Intel (formerly Altera) | Intel | Intel | Intel | Intel |
| Logic Elements | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits | 16,672,768 bits |
| User I/Os | 976 | 976 | 976 | 976 | 976 |
| DSP Blocks (18x18) | 768 | 768 | 768 | 768 | 768 |
| Speed Grade | 3 (mid-speed bin) | 4 (fastest speed bin) | 2 (slower speed bin) | 2 (slower speed bin) | 3 (industrial temp) |
| Temperature Grade | Commercial (0C to +85C) | Commercial (0C to +85C) | Commercial (0C to +85C) | Commercial (0C to +85C) | Industrial (-40C to +100C) |
| Core Voltage | 0.9 V | 0.9 V | 0.9 V | 0.9 V | 0.9 V |
주요 차별점
- Maximum density within the Stratix III E FBGA family (vs EP3SE110F1152C3)
- Highest I/O count in the FBGA-1517 package (vs EP3SE260F1152C3)
- Speed grade 3 versus 2 provides ~12% Fmax headroom (vs EP3SE260F1517C2)
설계 노트
Estimated: At 0.9 V core and peak logic activity (~85% toggle rate), the EP3SE260F1517C3 can draw 25-35 A on VCC. Use a 6-layer PCB with dedicated power planes for VCC (0.9 V), VCCIO (1.2/1.5/1.8/2.5/3.0 V per bank), and GND; place 0.1 uF X7R decoupling on every 4-6 VCC pins and at least 36 bulk 22 uF X5R capacitors around the package perimeter. A dedicated PowerTree (regulator sequencing controller) must enforce VCCIO before VCC at a 10 ms minimum slew. For power estimation, use Quartus II PowerPlay early in design to size the DC-DC converters; allow 30% headroom.
Estimated: With 25-35 A core current at 0.9 V and ~80% efficiency in the regulators, the device dissipates 4-6 W typical and up to 9-12 W at peak DSP utilization. The 1517-BBGA package theta_JA is approximately 12-15 C/W on a JEDEC 4-layer test board with airflow. Conduction-cooled designs should bond the package to an aluminum cold plate via a 25-um indium preform; convection designs should attach a finned heatsink with 0.5 C/W thermal interface material (TIM) and provide 200 LFM minimum airflow.
Layout the 1517-BBGA on an 8-layer (or thicker) stackup with 1.0 mm pitch ball escape using 0.4 mm laser-drilled microvias in pad. Use 50-ohm controlled impedance for single-ended LVCMOS33 and 100-ohm differential for LVDS pairs routing DDR3, SFI, and JTAG signals. Match ±10 mil length on DDR3 byte lanes, with DQ-to-DQS skew <25 ps. Reference all signals to an unbroken ground plane on layer 2 to suppress return-path discontinuities. Reserve keep-out zones beneath the BGA to allow X-ray inspection of solder joints.
Avoid these common pitfalls: (1) leaving JTAG TCK/TMS/TDI/TDO floating - they need external 4.7 kohm pull-ups to VCCIO_PD; (2) incorrect MSEL pin settings for AS vs FPP configuration mode - consult the Stratix III Configuration Handbook Chapter 9; (3) using a non-I/O-rated pin as a clock input - only true CLK pins support global clock networks; (4) ignoring VCC_PLL filtering - each PLL requires its own LC pi-filter; (5) configuring LVDS without the 100-ohm differential termination resistor across the receiver pair.
For DDR3 interfaces running at 533 MHz (1066 Mbps), use the Stratix III external memory controller PHY and follow the ALTMEMPHY levelling sequence during board bring-up. Maintain 100-ohm differential impedance for DQ/DQS pairs and 50-ohm for address/command. Use IBIS models from Intel to run pre-layout signal-integrity simulations in HyperLynx or Ansys SIwave. Account for 1.5 dB insertion loss budget at the Nyquist frequency. Fly-by DDR3 topology with VTT termination is preferred over T-branch to reduce stub-induced reflections.
규정 준수 정보
RoHS and REACH compliance per Altera/Intel product page. AEC-Q100 not applicable (this is an FPGA, not an automotive-grade IC). Lead-free (Pb-free) per C suffix variants. Halogen-free status not explicitly stated in verified web data - mark as unknown.
