H5AN8G4NAFR-PBC - 8Gb DDR4 SDRAM 1.2V | SK hynix
부품 번호: H5AN8G4NAFR-PBC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.5 | $5.50 |
| 10 | $4.95 | $49.50 |
| 100 | $4.4 | $440.00 |
| 500 | $3.95 | $1,975.00 |
| 1,000 | $3.55 | $3,550.00 |
H5AN8G4NAFR-PBC 개요
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random access memory, a member of the broader DRAM memory hierarchy that sits between cache memory (SRAM) and storage (NAND flash) in computing systems. DDR4 introduced bank groups, lower operating voltage, and higher data rates compared to DDR3, making it the dominant main-memory technology for servers, workstations, desktops, and embedded controllers. The H5AN8G4NAFR-PBC belongs to SK hynix's 8Gb DDR4 family (H5AN8G4NAFR-xxC for x4, H5AN8G8NAFR-xxC for x8, H5AN8G6NAFR-xxC for x16 organizations).
Key features include 8Gb density in a single x4 component, 16 internal banks arranged in 4 bank groups (BG0-BG1 with BA0-BA1), a 17-bit row address (A0-A16), DLL-on operation, and on-die termination consistent with the JEDEC DDR4 SDRAM standard. The -PBC suffix identifies the speed bin and temperature/lead-free grade within the family; the datasheet speed-bin tables cover DDR4-1600, DDR4-1866, DDR4-2133, and DDR4-2400 operating points, with Geardown Mode considerations noted for the lower bins.
Architecturally, the device uses SK hynix CMOS DRAM process technology with DDR4 bank-group pipelining, which increases effective data bandwidth by allowing back-to-back accesses to different bank groups without the full tRC row-cycle penalty. I/O signaling uses the DDR4 SSTL12 interface at VDDQ = 1.2 V with programmable drive strength and ODT settings defined in the mode registers.
Typical applications are main-memory DIMMs and soldered-down memory subsystems for servers and data centers, industrial PCs and embedded controllers, networking equipment, and test/measurement platforms requiring large memory density and high bandwidth. Designers should consult the datasheet speed-bin table and IPP (DRAM package power) specification when planning power delivery; DDR4 VPP = 2.5 V (+0.25/-0.125 V) must be provided in addition to the 1.2 V core/I/O rail. Signal integrity at DDR4-2400 requires length-matched, ODT-tuned fly-by routing per the memory controller's design guide. This page adds distributor sourcing data, drop-in alternatives, and practical design notes beyond the manufacturer datasheet.
드롭인 대체품: H5AN8G4NAFR-PBC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN8G4NAFR-PBC (동일 폼 팩터 및 풋프린트) — 차이점: Package, Organization, Interface, Datasheet Revision, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN8G8NAFR-PBC
✅ 드롭인✓ 재고 있음
$2.2 / 개
데이터시트 보기 →H5AN8G4NAFR-UHC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$3.05 / 개
데이터시트 보기 →H5AN8G4NAFR-VKC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.98 / 개
데이터시트 보기 →H5AN8G6NCJR-PBC
✅ 드롭인✓ 재고 있음
$3.3 / 개
데이터시트 보기 →MT40A1G8AG-062E
✅ 드롭인✓ 재고 있음
$3.1 / 개
데이터시트 보기 →H5AN8G4NAFR-PBC 사양
| 메모리 유형 | DDR4 SDRAM |
| Density | 8 Gb |
| 메모리 구성 | 2Gb x 4 |
| Interface Voltage (VDD/VDDQ) | 1.2 V +/- 0.06 V |
| Wordline Pump Voltage (VPP) | 2.5 V (+0.25/-0.125 V) |
| Speed Bins (per datasheet) | DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) |
| Bank Groups | 4 (BG0-BG1) |
| Banks | 16 (4 bank groups x 4 banks) |
| Row Address | A0-A16 (17 bits) |
| 패키지 | 78-ball FBGA |
| 실장 유형 | Surface Mount |
| Technology | CMOS |
| Lead-Free / Halogen-Free | Yes (RoHS Compliant per datasheet) |
| RoHS 상태 | Compliant |
| Geardown Mode Note | DDR4-1600/1866/2133/2400 bins valid only when Geardown Mode is disabled |
H5AN8G4NAFR-PBC 78-ball fbga 핀 구성 가이드
H5AN8G4NAFR-PBC(78-ball fbga 패키지)의 핀 구성입니다. 핀 번호, 기능, 연결 다이어그램은 제조사 데이터시트에 정의되어 있습니다. 정확한 풋프린트와 솔더링 지침은 해당 문서를 참조하십시오.
다음에 대한 상세 핀아웃 데이터 없음: H5AN8G4NAFR-PBC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN8G4NAFR-PBC 적합 용도: 6 애플리케이션s: Server Main Memory (RDIMM/LRDIMM Components), Data Center Storage Controllers, Networking and Telecom Equipment, Industrial PCs and Embedded Controllers, Test and Measurement Instrumentation, Graphics and Display Processing Add-in Cards.
Server Main Memory (RDIMM/LRDIMM Components)
The H5AN8G4NAFR-PBC provides 8Gb per device in a 2Gb x 4 organization, the classic building block for registered and load-reduced server DIMMs where x4 organization enables per-device ECC granularity for Chipkill-class reliability. Populating 72-bit ECC channels with eighteen x4 devices yields 16 GB per rank at 1.2 V operation, materially lower power than equivalent DDR3 capacity. Placed on fly-by-routed command/address buses with per-DIMM ODT and VDDQ termination, the device sustains DDR4-2400-class bandwidth under DLL-on operation. Designers must budget IDD currents per the datasheet IPP specification and coordinate power delivery across the 1.2 V and 2.5 V VPP rails.
추천
Data Center Storage Controllers
RAID and NVMe storage controllers need large, low-latency working memory for write caching and metadata indexing. The H5AN8G4NAFR-PBC's 8Gb density lets a soldered-down pool reach multi-gigabyte cache footprints with relatively few devices, and its DDR4-2400-class bin delivers the sustained read/write bandwidth that cache-flush bursts demand. Its 16-bank/4-bank-group architecture supports back-to-back interleaved accesses across bank groups, reducing effective latency for random small-block workloads typical of transactional storage. Because the cache is persistent-critical, implement controller-side ECC and full initialization/training at every boot; the 1.2 V SSTL12 interface also simplifies shared-rail design with the host SoC.
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Networking and Telecom Equipment
Switches, routers, and 5G baseband cards use soldered DDR4 for packet buffers, flow tables, and DSP coefficient storage. The H5AN8G4NAFR-PBC suits these designs because 8Gb per device keeps component count low on dense line cards, while 1.2 V operation limits power in convection-cooled chassis where airflow is constrained. Its x4 organization allows fine-grained data striping across multiple devices, useful when memory bandwidth must scale with port count. Layout requires length-matched fly-by routing, ODT tuning per the memory controller's guide, and careful 1.2 V rail decoupling; the VPP = 2.5 V rail is small-current but must be supervised, since VPP undervoltage degrades row-access reliability over temperature.
추천
Industrial PCs and Embedded Controllers
Industrial PCs, machine-vision controllers, and factory-automation gateways require multi-gigabyte main memory with long-lifecycle component availability. The H5AN8G4NAFR-PBC provides 8Gb DDR4 at the industry-standard 1.2 V interface compatible with mainstream embedded x86 and ARM chipsets supporting DDR4-2400-class bins. Compared with DDR3L predecessors, it halves interface voltage and doubles density per die, shrinking board area for fanless designs. Design teams should confirm the operating temperature grade for the cabinet environment, implement DDR4 training at each boot, and derate ambient by IDD x thermal-resistance estimates. Qualifying a cross-brand second source such as Micron's 8Gb DDR4 protects long production runs against DRAM market allocation cycles.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators stream high-volume acquisition data into deep capture memory. The H5AN8G4NAFR-PBC's 8Gb density supports multi-second capture windows at high sample rates when combined with bank-group interleaving, which sustains near-peak DDR4-2400 bandwidth for streaming write patterns. Its x4 organization enables wide independent channels - instruments commonly deploy multiple 64-bit controllers each fed by x4 device groups to parallelize acquisition streams. Design care centers on signal integrity at speed: fly-by clock/address routing, per-drop stub control, and ODT calibration. The low 1.2 V swing also reduces switching noise coupled into sensitive analog front ends compared with earlier DDR generations.
추천
Graphics and Display Processing Add-in Cards
Professional display cards, video-wall controllers, and broadcast frame buffers need large memory for multi-4K framebuffer composition. The H5AN8G4NAFR-PBC offers a cost-effective soldered main-memory tier: 8Gb per device allows 2 GB with just sixteen devices, and the 16-bank architecture absorbs the random read-modify-write patterns of compositing engines. Its DDR4-2400-class bandwidth (~19.2 GB/s per 64-bit channel at the top bin) sustains multi-stream video throughput, while 1.2 V operation keeps card power within slot budgets. Layout should favor symmetric fly-by topologies and ground-referenced termination; x4 striping across two channels gives fault-tolerant pixel paths for broadcast environments where a dropped frame is unacceptable.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5AN8G4NAFR-PBC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN8G8NAFR-PBC | H5AN8G4NAFR-UHC | H5AN8G4NAFR-VKC | MT40A1G8AG-062E |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 2Gb x 4 | 1Gb x 8 | 2Gb x 4 | 2Gb x 4 | 1Gb x 8 |
| VDD / VDDQ | 1.2 V +/- 0.06 V | 1.2 V +/- 0.06 V | 1.2 V +/- 0.06 V | 1.2 V +/- 0.06 V | 1.2 V |
| Speed Bin | -PBC (per family bin table: DDR4-1600 to 2400, DLL ON) | -PBC (same bin family) | -UHC (different bin) | -VKC (different bin) | -062E (DDR4-3200 class) |
| Bank Groups / Banks | 4 BG / 16 banks (x4) | 4 BG / 16 banks (x8) | 4 BG / 16 banks | 4 BG / 16 banks | 4 BG / 16 banks |
주요 차별점
- x4 organization for server-class ECC granularity (vs H5AN8G8NAFR-PBC)
- Same footprint speed-grade scalability (vs H5AN8G4NAFR-UHC)
- Cross-brand second-source availability (vs MT40A1G8AG-062E)
설계 노트
Provide two rails: VDD = VDDQ = 1.2 V +/- 0.06 V and VPP = 2.5 V +0.25/-0.125 V. VPP is a low-current wordline-pump supply but must be present and supervised; per the datasheet absolute specification table, VPP undervoltage outside its window risks row-access reliability. Budget per-device current from the datasheet IDD tables for the selected speed bin and multiply by device count; DDR4 DIMM designs should follow the IPP (DRAM package power) specification on page 32, which directs users to the DRAM datasheet and/or DIMM SPD to determine supported power conditions.
At DDR4-2400 the 1.2 V SSTL12 interface leaves little noise margin. Use fly-by command/address routing with per-DIMM or per-device ODT calibration, keep data-group trace-length skew within your memory controller's spec (typically a few tens of picoseconds), and reference all signals to solid ground planes. Note the datasheet caveat that DDR4-1600/1866/2133/2400 bin tables are valid only when Geardown Mode is disabled - enabling Geardown changes the clock-to-command relationship and requires retiming in the controller configuration.
Do not interchange the x4 and x16 variants of this family on one footprint: H5AN8G4NAFR (x4) and H5AN8G8NAFR (x8) use the 78-ball FBGA ballout, while x16 family members use a different ball count/map. Confirm the ordering-code suffix (-PBC vs -UHC/-VKC/etc.) matches the speed bin in your controller timing table; same-family suffixes are the same die with different bins, not interchangeable at the timing level. Finally, BGA ball maps are drawn from the top view - mirror errors in the PCB footprint are a common assembly defect.
Estimated: junction/ambient rise equals total device power times package thermal resistance. For a first-pass check, take device power from the datasheet IDD x VDD calculation for your bin and utilization, then verify the resulting temperature stays within the datasheet operating range. DRAM refresh rate (1x vs 2x) interacts with temperature - if your thermal estimate approaches the datasheet's extended-temperature boundary, plan for 2x refresh or improved airflow, and confirm the exact -PBC grade temperature limits from the datasheet before release.
규정 준수 정보
Datasheet title explicitly states Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in retrieved data.