K4AAG165WM-BCWE - 16Gb DDR4-3200 SDRAM x16 | Samsung
부품 번호: K4AAG165WM-BCWE ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $68.31 | $68.31 |
| 10 | $64.89 | $648.90 |
| 100 | $61.48 | $6,148.00 |
| 500 | $58.07 | $29,035.00 |
| 1,000 | $54.65 | $54,650.00 |
K4AAG165WM-BCWE 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting within the memory hierarchy of volatile semiconductor memory: DRAM -> SDRAM -> DDR SDRAM -> DDR4 SDRAM -> power management and memory subsystem of computing platforms. Compared with DDR3, DDR4 lowers operating voltage from 1.5V to 1.2V, doubles bank groups to eight, and raises data rates to 3200 Mbps in this speed bin, improving bandwidth per watt for memory controllers that support the JEDEC DDR4 interface.
Key features include the high 16Gb density in a single x16 component, 3200 Mbps speed grade (BCWE bin), and a wide common I/O bus that simplifies 16-bit-wide memory interfaces. Bank-group architecture allows faster inter-bank access, while on-die termination and DLL-based output calibration preserve signal integrity at high data rates on standard PCB stackups.
Technically, the device uses a 256M x 16 internal organization with DDR4 row/bank-group/column addressing, programmable CAS latency, and burst length 8 operation. The W-suffix die revision reflects Samsung's latest generation 16Gb DDR4 process, improving bit density and power efficiency versus earlier A/C-die versions in the same family.
Typical applications include embedded computing and industrial mainboards, networking and telecom line cards, set-top boxes, smart TVs, gaming consoles, and automotive-infotainment-class SoC platforms that use x16-wide DDR4 memory channels.
A key design consideration is memory-controller compatibility: verify the die revision (WM) against the SoC or controller qualified-device list, and respect PCB length matching and VTT termination requirements at 3200 Mbps to guarantee eye-margin compliance across temperature.
This page adds value beyond the datasheet by synthesizing distributor pricing signals, same-package drop-in variants (die and speed bin options), and practical layout guidance for high-speed DDR4 routing not found in a single manufacturer document.
드롭인 대체품: K4AAG165WM-BCWE — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4AAG165WM-BCWE (동일 폼 팩터 및 풋프린트) — 차이점: Package, Organization, Interface, Data Rate, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4AAG165WA-BCWE
✅ 드롭인✓ 재고 있음
$62.4 / 개
데이터시트 보기 →K4AAG165WM-BCTD
✅ 드롭인✓ 재고 있음
$62 / 개
데이터시트 보기 →K4AAG165WM-BCRC
✅ 드롭인✓ 재고 있음
$22.6 / 개
데이터시트 보기 →K4AAG085WM-BCWE
✅ 드롭인✓ 재고 있음
$7 / 개
데이터시트 보기 →MT40A256M16GE-075E:B
✅ 드롭인✓ 재고 있음
$3.95 / 개
데이터시트 보기 →K4AAG165WM-BCWE 사양
| 메모리 유형 | DDR4 SDRAM |
| Density | 16 Gbit |
| 메모리 구성 | 256M x 16 (1G x 16) |
| 데이터 속도 | 3200 Mbps |
| 인터페이스 | Parallel (DDR4) |
| Supply Voltage VDD | 1.2 V |
| Supply Voltage VDDQ | 1.2 V |
| Bank Groups | 4 (x16 configuration) |
| Burst Length | 8 |
| 패키지 | 78-ball FBGA |
| 실장 유형 | Surface Mount |
| Die Revision | W (WM suffix) |
| RoHS 상태 | Compliant |
| Operating Frequency | 1600 MHz (DDR, 3200 Mbps) |
K4AAG165WM-BCWE 78-ball fbga 핀 구성 가이드
K4AAG165WM-BCWE(78-ball fbga 패키지)의 핀 구성입니다. 핀 번호, 기능, 연결 다이어그램은 제조사 데이터시트에 정의되어 있습니다. 정확한 풋프린트와 솔더링 지침은 해당 문서를 참조하십시오.
다음에 대한 상세 핀아웃 데이터 없음: K4AAG165WM-BCWE.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4AAG165WM-BCWE 적합 용도: 6 애플리케이션s: Embedded Industrial Mainboards, Networking and Telecom Line Cards, Smart TV and Set-Top Box Platforms, Automotive Infotainment and Cluster SoCs, Test and Measurement Instrumentation, Edge AI and Vision Processing Modules.
Embedded Industrial Mainboards
Industrial controller boards and COM Express modules use x16 DDR4 components to build 32-bit or 64-bit memory channels. The K4AAG165WM-BCWE delivers 16 Gbit per component at 3200 Mbps, so two chips provide 4 GB and 12.8 GB/s peak bandwidth without extra chip-select complexity. Its 1.2V supply reduces memory-subsystem power versus DDR3, easing thermal budgets in fanless enclosures. Place components symmetrically on a fly-by or T-topology per controller guidelines, length-match DQ to strobes within +/-25 mils, and use VTT termination rails sized for full bus loading during 3200 Mbps operation.
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Networking and Telecom Line Cards
Switch, router, and base-station line cards require deep packet buffering, and 16Gb x16 DDR4 components give designers 2 GB per chip in a compact 78-ball FBGA footprint. The K4AAG165WM-BCWE's 3200 Mbps rate supports high-throughput queue management, while bank-group architecture interleaves buffer reads and writes efficiently. Power efficiency at 1.2V matters in racks with strict watts-per-port targets. Designers should reserve address/command space per the Samsung datasheet ballout, simulate crosstalk on densely routed DQ buses, and qualify both W and A die revisions for supply resilience.
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Smart TV and Set-Top Box Platforms
Digital media SoCs for smart TVs, streaming boxes, and set-top units typically use one or two x16 DDR4 chips for frame buffers and application memory. A single K4AAG165WM-BCWE provides 2 GB and 6.4 GB/s peak bandwidth - sufficient for 4K video decode pipelines when paired with hardware codecs. The 78-ball FBGA suits the low-profile layouts of TV boards, and the 1.2V rail integrates with common PMIC buck outputs. Ensure the SoC memory controller QVL includes the W die revision, and validate eye diagrams at maximum length-matching skew across temperature.
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Automotive Infotainment and Cluster SoCs
Digital cockpit, infotainment, and instrument-cluster platforms with DDR4-capable SoCs use x16 components for graphics frame buffers and navigation databases. The K4AAG165WM-BCWE's 16Gb density and 3200 Mbps bandwidth support multi-display rendering, while its low 1.2V operation limits self-heating in dashboard environments. For automotive deployments, confirm the temperature suffix and AEC-Q100 applicability for the purchased grade, since commercial grades may need supplementary qualification. Use controlled-impedance routing, per-datasheet decoupling on VDDQ planes, and controller thermal throttling to manage refresh current at high ambient temperatures.
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Test and Measurement Instrumentation
Oscilloscope, logic analyzer, and signal-generator mainframes need large capture memory; 16Gb DDR4 components let instruments store long acquisition records at low cost per bit. The K4AAG165WM-BCWE supplies 2 GB per chip with a 16-bit bus, and streaming architectures exploit the 3200 Mbps rate for sustained record transfer. Deterministic latency and error handling matter here: enable controller-level ECC where the FPGA or ASIC memory controller supports it, and characterize refresh-interval impact on continuous-capture workloads. The 78-ball FBGA also simplifies rework compared with stacked-package memory alternatives.
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Edge AI and Vision Processing Modules
Edge AI accelerator modules and smart-camera boards use x16 DDR4 to hold neural-network weights and frame buffers. The K4AAG165WM-BCWE offers 2 GB of local memory at 3200 Mbps, giving enough bandwidth to stream quantized model layers and camera frames concurrently on a 32-bit channel with two chips. The 1.2V supply supports battery- and PoE-powered edge nodes where every watt counts. Designers should pair it with a DDR4-capable vision SoC, verify die revision support in the BSP memory-training tables, and reserve layout margin for EMI shielding in camera assemblies.
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추천 제품 요약
엔지니어링 참조 데이터: K4AAG165WM-BCWE — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4AAG165WA-BCWE | K4AAG165WM-BCTD | K4AAG165WM-BCRC | K4AAG085WM-BCWE | MT40A256M16GE-075E:B |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 8 Gbit | 16 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 512M x 16 | 256M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 2666 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Die Revision | W (WM) | A (WA) | W (WM) | W (WM) | W (WM) | E (Micron revision) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
주요 차별점
- Latest W die revision with improved bit density (vs K4AAG165WA-BCWE)
- 3200 Mbps headroom over lower bins (vs K4AAG165WM-BCTD)
- 2x density in the same footprint versus 8Gb family (vs K4AAG085WM-BCWE)
설계 노트
At 3200 Mbps, DDR4 read/write eye margins are tight. Keep DQ/DQS trace-length mismatch within +/-25 mils, keep clock and strobe lines as matched differential pairs with 85-100 ohm impedance, and use fly-by routing for address/command with per-datasheet stub limits. Run IBIS or S-parameter simulation of the full channel including SoC controller, FBGA package parasitics, and PCB stackup before tape-out; re-verify eye masks at temperature extremes.
Budget the VTT termination rail for worst-case simultaneous switching: with a 16-bit bus at 3200 Mbps, instantaneous termination current is significant, so use a dedicated sink-source LDO or VTT generating buck rated for the full bus load with 10x bulk capacitance at the DRAM cluster. Decouple each VDD/VDDQ ball per the Samsung datasheet recommendation - typically multiple 0.1 uF ceramics plus bulk capacitance per component. Verify rails stay within DDR4 tolerance under 0/100% burst load.
Do not assume die-revision interchangeability is automatic: many SoC vendors approve only specific die revisions (A, C, W) in their memory QVL. Before substituting K4AAG165WM-BCWE with the WA or BC variants, check the controller vendor's qualified-device list, then run full memory training and margin testing on real hardware. Also confirm the temperature suffix on purchase orders - family variants cover 0C to +85C and, for some grades, -40C to +95C per LCSC data.
규정 준수 정보
RoHS compliance per Samsung Semiconductor standard environmental policy for current-generation DDR4 SDRAM. Formal REACH, halogen-free, and conflict-minerals declarations must be requested from Samsung or the distributor; not stated in the provided data.