H5TC4G63AFR-H9A - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
부품 번호: H5TC4G63AFR-H9A ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
H5TC4G63AFR-H9A 개요
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core and I/O supply, and a 96-ball FBGA package. The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination (ODT) for signal integrity. It supports auto-refresh and self-refresh modes, and includes a temperature-compensated self-refresh (TCSR) feature for low-power standby.
Technically, the H5TC4G63AFR-H9A uses a 30nm-class process technology, achieving high density with low power. The -H9A speed grade indicates a tCK of 1.07ns (DDR3L-1866) and CL13. The device features a 16n prefetch architecture, enabling high bandwidth. It also includes programmable impedance calibration (ZQ calibration) for improved signal quality.
Typical applications include main memory for ultra-thin laptops, embedded computing, networking routers, and industrial PCs. Its low voltage and high density make it ideal for space-constrained designs where power and performance are balanced.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity at 1866 Mbps.
드롭인 대체품: H5TC4G63AFR-H9A — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5TC4G63AFR-H9A (동일 폼 팩터 및 풋프린트) — 차이점: Package, Supply Voltage, Burst Length, Data Rate, Operating Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5TC4G63AFR-H9I
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
H5TC4G63AFR-RDL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
H5TC4G63AFR-PBR
✅ 드롭인✓ 재고 있음
$5.9091 / 개
데이터시트 보기 →MT41K256M16HA-125
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.3636 / 개
데이터시트 보기 →K4B4G1646E-BYMA
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$14.3182 / 개
데이터시트 보기 →H5TC4G63AFR-H9A 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| Density | 4 Gb |
| 메모리 구성 | 256M x 16 |
| 공급 전압 | 1.35 V |
| 데이터 속도 | 1866 Mbps (PC3-14900) |
| CAS 레이턴시 | 13 |
| 패키지 | 96-ball FBGA |
| 동작 온도 | 0C to +95C (TC) |
| Lead-Free | Yes |
| 할로겐 프리 | Yes |
| RoHS Compliant | Yes |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Self-Refresh | Yes |
| Auto-Refresh | Yes |
H5TC4G63AFR-H9A 핀 구성
| 핀 A1 | VDD — Power supply (1.35V) |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply (1.35V) |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
일반적인 애플리케이션
H5TC4G63AFR-H9A 적합 용도: 6 애플리케이션s: Ultra-Thin Laptops, Embedded Computing, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Ultra-Thin Laptops
The H5TC4G63AFR-H9A's 1.35V operation and 4Gb density make it ideal for ultra-thin laptops where power efficiency and space are critical. Its 1866 Mbps data rate ensures smooth multitasking and fast application loading. The 96-ball FBGA package allows for compact PCB designs, and the low voltage reduces heat generation, extending battery life. Designers can pair it with low-power processors like Intel Core U-series to achieve optimal performance-per-watt.
추천
Embedded Computing
In embedded systems, the H5TC4G63AFR-H9A provides high-density memory with low power consumption, making it suitable for industrial PCs, single-board computers, and IoT gateways. Its 1.35V supply reduces overall system power, and the 1866 Mbps bandwidth supports real-time data processing. The device's on-die termination improves signal integrity in noisy environments, and its wide operating temperature range (0C to +95C) ensures reliability in industrial settings.
추천
Networking Equipment
The H5TC4G63AFR-H9A is well-suited for networking routers and switches that require high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate enables fast data throughput, while the 1.35V operation reduces power consumption in always-on equipment. The 96-ball FBGA package is compatible with standard PCB layouts, and the device's low power helps meet energy efficiency regulations. It can be used alongside network processors to handle high traffic loads.
추천
Industrial PCs
For industrial PCs used in automation and control, the H5TC4G63AFR-H9A offers reliable memory with a wide temperature range and low power. Its 4Gb density supports demanding applications like machine vision and data logging. The 1.35V supply reduces heat, which is crucial in sealed enclosures. The device's high bandwidth ensures fast data access, and its RoHS compliance meets environmental standards. It can be paired with industrial-grade processors for robust performance.
추천
Consumer Electronics
The H5TC4G63AFR-H9A is used in consumer devices like smart TVs, set-top boxes, and gaming consoles where high memory bandwidth and low power are essential. Its 1866 Mbps data rate supports 4K video streaming and smooth gaming. The 1.35V operation reduces energy consumption, contributing to Energy Star compliance. The compact FBGA package allows for slim device designs, and the device's reliability ensures long product life.
추천
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-H9A provides high-density memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 1866 Mbps bandwidth supports high-resolution displays. The device's operating temperature range (0C to +95C) is suitable for cabin environments. It can be used with automotive-grade processors to deliver a responsive user experience.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5TC4G63AFR-H9A — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5TC4G63AFR-H9I | H5TC4G63AFR-RDL | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK hynix | SK hynix | SK hynix | Micron |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1866 Mbps |
| CAS Latency | 13 | 13 | 11 | 13 |
| Operating Temperature | 0C to +95C | -40C to +95C | 0C to +95C | 0C to +95C |
주요 차별점
- Higher data rate than -RDL and -PBR variants (vs H5TC4G63AFR-RDL)
- Commercial temperature range vs industrial (vs H5TC4G63AFR-H9I)
- Same-brand availability and compatibility (vs MT41K256M16HA-125)
설계 노트
For DDR3L routing at 1866 Mbps, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within 0.5mm for data and address/command groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The H5TC4G63AFR-H9A has a maximum operating temperature of +95C. Ensure adequate airflow or heatsinking in high-ambient environments. The 1.35V operation reduces power dissipation, but at high data rates, the device can still generate significant heat. Use thermal vias under the FBGA package to improve heat transfer to the PCB.
Use on-die termination (ODT) settings to match the motherboard's impedance and reduce reflections. For 1866 Mbps, set ODT to 40 ohms for data signals. Also, enable ZQ calibration during initialization to compensate for process variations. Follow the JEDEC DDR3L guidelines for VREF training to ensure reliable operation.
규정 준수 정보
Lead-free and halogen-free per datasheet. RoHS compliant. REACH and conflict minerals status not specified in provided data.
