H5AN8G8NAFR-UHI - 8Gb DDR4-2400 x8 SDRAM | SK Hynix
부품 번호: H5AN8G8NAFR-UHI ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.5 | $6.50 |
| 10 | $5.95 | $59.50 |
| 100 | $5.4 | $540.00 |
| 500 | $4.95 | $2,475.00 |
| 1,000 | $4.5 | $4,500.00 |
| 3,000 | $4.1 | $12,300.00 |
H5AN8G8NAFR-UHI 개요
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a category of volatile main-memory ICs that transfers data on both the rising and falling edges of the clock signal. In the memory hierarchy, DDR4 SDRAM sits as the main system memory between CPU caches and mass storage, feeding processors with high-bandwidth working data. The DDR4 generation introduced lower operating voltage (1.2V versus 1.5V for DDR3), bank grouping, and higher densities per die, making it the dominant main-memory standard for servers, workstations, and embedded platforms.
Key features of the H5AN8G8NAFR include 8Gb (1 billion bytes x 8 organization) density per die, high-bandwidth data transfer suited to main-memory applications requiring large memory density, lead-free and halogen-free construction (RoHS compliant per the manufacturer datasheet), and JEDEC-class electrical specifications for interoperability with standard DDR4 memory controllers.
Architecturally, the device is a CMOS DRAM organized into banks with bank-group addressing, supporting burst lengths and on-die termination consistent with the DDR4 JEDEC interface. The x8 organization simplifies memory subsystem design for controllers that prefer byte-wide devices, and the FBGA package provides low-inductance ball connections essential for signal integrity at 1200 MHz clock rates.
Typical applications include desktop and server main memory modules (UDIMM, RDIMM, SODIMM), embedded computing boards, networking equipment line cards, and industrial systems requiring large DRAM capacity. The 8Gb density allows 8GB modules from just eight x8 devices.
Design considerations: DDR4 requires careful length matching of address/command and data lines, proper VTT termination, and power-rail sequencing of the 1.2V VDD supply. Speed-grade suffixes (UHI, UHC, RDC, PBC) define supported CAS latency and operating temperature range, so verify the suffix against your controller timing table.
This page synthesizes distributor stock data, drop-in alternatives within the H5AN8G8NAFR family, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: H5AN8G8NAFR-UHI — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN8G8NAFR-UHI (동일 폼 팩터 및 풋프린트) — 차이점: Interface, Package, Data Rate, Organization, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN8G8NAFR-UHC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →H5AN8G8NAFR-RDC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.95 / 개
데이터시트 보기 →H5AN8G8NAFR-PBC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.2 / 개
데이터시트 보기 →H5AN8G8NAFR-TFC
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
H5AN8G8NMFR-TFC
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
H5AN8G8NAFR-UHI 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Memory Density | 8 Gb |
| 메모리 구성 | 1G x 8 |
| 데이터 속도 | DDR4-2400 (PC2400), 1200 MHz clock |
| 공급 전압 | 1.2 V |
| 인터페이스 | DDR4 (JEDEC-class) |
| 패키지 | 78-ball FBGA |
| 실장 유형 | Surface Mount |
| Lead Free | Yes |
| 할로겐 프리 | Yes |
| RoHS 상태 | Compliant |
| Technology | CMOS |
| Application | Main memory (high density, high bandwidth) |
H5AN8G8NAFR-UHI 78-ball fbga 핀 구성 가이드
H5AN8G8NAFR-UHI(78-ball fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN8G8NAFR-UHI.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN8G8NAFR-UHI 적합 용도: 6 애플리케이션s: Desktop and Workstation Main Memory, Server and Data Center Memory Modules, Embedded Computing and Industrial Boards, Networking and Telecom Equipment, Test and Measurement Instruments, Automotive and Rugged Embedded Systems.
Desktop and Workstation Main Memory
The H5AN8G8NAFR-UHI serves as a main-memory building block for desktop PCs and workstations, where its 8Gb x8 density allows an 8GB module from just eight devices. Its DDR4-2400 rate (1200 MHz, PC2400) matches mainstream desktop controller clocks, delivering high bandwidth without the cost of premium speed bins. The 1.2V supply reduces module power compared to DDR3, and the 78-ball FBGA package fits standard UDIMM/SODIMM land patterns. Designers should length-match data groups and set controller timing to the UHI speed-grade table from the SK Hynix datasheet for reliable operation across temperature.
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Server and Data Center Memory Modules
In server platforms, the H5AN8G8NAFR-UHI populates RDIMM and LRDIMM main-memory subsystems where capacity per module drives total system memory. The 8Gb density per die and x8 organization enable high-capacity modules with byte-wide chip-select granularity, and its JEDEC-class DDR4 interface ensures interoperability with server memory controllers. The 1.2V operation keeps per-module power manageable at scale, important for data center energy budgets. Verify the UHI speed grade against the platform's supported DDR4-2400 timing set, and confirm ECC-capable controller configuration since server designs typically run x8 devices with in-chip ECC or controller-side correction.
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Embedded Computing and Industrial Boards
Embedded x86 and ARM platforms with DDR4 controllers use the H5AN8G8NAFR-UHI for 4-8GB soldered-down memory. The x8 organization simplifies routing on four-layer to eight-layer embedded boards, and the FBGA-78 footprint is standard across DDR4 x8 layouts, enabling BOM flexibility. Its DDR4-2400 operation covers most industrial SoC maximums, and the 1.2V rail integrates easily with embedded PMICs. Industrial designs should confirm the operating-temperature suffix requirements and derate timing margins for extended temperature ranges, consulting the SK Hynix datasheet IDD and AC timing tables for the UHI grade.
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Networking and Telecom Equipment
Routers, switches, and 5G telecom line cards require large DRAM buffers for packet processing and deep packet inspection. The H5AN8G8NAFR-UHI provides 8Gb per device with DDR4-2400 bandwidth suited to high-throughput buffering, and its x8 organization supports the byte-wide memory buses common in network processor designs. The 1.2V supply limits board-level power in densely populated line cards. Designers should account for sustained high utilization by using the datasheet worst-case IDD currents for power supply sizing, and ensure signal-integrity compliance with DDR4 length matching on high-layer-count backplane-adjacent boards.
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Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators use large DDR4 arrays for deep acquisition memory. The H5AN8G8NAFR-UHI's 8Gb density and 2400 Mbps transfer rate support long record lengths and fast streaming, while the 1.2V rail keeps instrument internal power budgets under control. Multiple x8 devices can be banked in parallel for wider buses and higher aggregate bandwidth. Instrument designers should implement controller calibration of read/write leveling (per DDR4 requirements) and verify UHI timing compliance across the instrument's full operating temperature range per the SK Hynix datasheet AC parameters.
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Automotive and Rugged Embedded Systems
Infotainment, ADAS domain controllers, and rugged gateways increasingly use DDR4 for large working memory. The H5AN8G8NAFR-UHI provides 8Gb in a compact 78-ball FBGA, allowing multi-gigabyte soldered memory within tight board space. Its DDR4-2400 rate supports camera, radar-fusion, and navigation workloads, while the 1.2V supply suits the automotive low-power rail architecture. For automotive deployments, confirm the required operating-temperature grade suffix and any AEC-Q100 qualification requirements, since suffix variants carry different temperature ranges per the SK Hynix ordering-information table in the datasheet.
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추천 제품 요약
엔지니어링 참조 데이터: H5AN8G8NAFR-UHI — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN8G8NAFR-UHC | H5AN8G8NAFR-RDC | H5AN8G8NAFR-TFC | H5AN8G8NMFR-TFC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA family - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed-Grade Suffix | UHI | UHC | RDC | TFC | TFC (M-die) |
| RoHS / Lead-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
주요 차별점
- Cost-optimized 2400 speed grade (vs H5AN8G8NAFR-TFC)
- Proven A-die family with multiple sourcing suffixes (vs H5AN8G8NMFR-TFC)
- Wide suffix temperature/speed selection on identical footprint (vs H5AN8G8NAFR-PBC)
설계 노트
At DDR4-2400 (1200 MHz clock), route address/command and data groups with strict length matching per DDR4 routing guidelines: keep data-group skews within controller specification and use fly-by termination for address/command lines. The 78-ball FBGA package minimizes ball inductance, but the PCB stackup still requires controlled impedance (typically 40 ohm single-ended for data) and reference-plane continuity. Simulate eye diagrams for the DQS/DQ pairs before fabrication on first-pass designs.
The H5AN8G8NAFR-UHI runs from a 1.2V VDD rail; provide VDDQ termination (VTT) at VDDQ/2 with a capable LDO or switching VTT regulator sized for peak termination currents across all devices. For an eight-device module, sum the datasheet IDD currents for your utilization profile to size the 1.2V rail; use worst-case (datasheet maximum) currents rather than typical values for supply design. Decouple each device with local bulk and high-frequency ceramics per the reference design in the SK Hynix datasheet.
The suffix encodes speed grade and temperature range: -UHI is DDR4-2400, and substituting a different suffix (UHC, RDC, PBC, TFC) changes supported CAS latency and timing. Always reprogram controller timing registers and re-run memory training/calibration after any suffix change. Also note that x8 DDR4 devices support CRC and CA parity features differently from x16 - consult the datasheet feature table, and do not assume DDR3 design rules transfer directly to DDR4 bank-group timing constraints.
DDR4 read/write leveling (ZQ calibration and MR programming) requires the ZQ ball connected to a precision external resistor (typically 240 ohm, 1%) to ground per the datasheet ballout. Place the resistor with a short, low-inductance trace to the ZQ ball and keep it away from switching regulators. Incorrect ZQ resistor values degrade on-die termination accuracy and signal integrity at 2400 Mbps.
규정 준수 정보
Per the SK Hynix H5AN8G8NAFR datasheet record on Alldatasheet, the device is Lead-Free & Halogen-Free (RoHS). REACH and conflict-minerals declarations are published separately by SK Hynix and were not present in the provided data.