H5TC4G63AFR-H9A - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
Référence : H5TC4G63AFR-H9A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3 400,00 |
| 1 000 | $6.5 | $6 500,00 |
H5TC4G63AFR-H9A Présentation
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, embedded systems, and networking equipment where power efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 1.35V core and I/O supply, and a 96-ball FBGA package. The device offers programmable CAS latency, burst lengths of 8 and 4, and on-die termination (ODT) for signal integrity. It supports auto-refresh and self-refresh modes, and includes a temperature-compensated self-refresh (TCSR) feature for low-power standby.
Technically, the H5TC4G63AFR-H9A uses a 30nm-class process technology, achieving high density with low power. The -H9A speed grade indicates a tCK of 1.07ns (DDR3L-1866) and CL13. The device features a 16n prefetch architecture, enabling high bandwidth. It also includes programmable impedance calibration (ZQ calibration) for improved signal quality.
Typical applications include main memory for ultra-thin laptops, embedded computing, networking routers, and industrial PCs. Its low voltage and high density make it ideal for space-constrained designs where power and performance are balanced.
When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity at 1866 Mbps.
Alternatives de remplacement direct pour H5TC4G63AFR-H9A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5TC4G63AFR-H9A (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Burst Length, Data Rate, Operating Temperature.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5TC4G63AFR-H9I
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5TC4G63AFR-RDL
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
H5TC4G63AFR-PBR
✅ Remplacement direct✓ En stock
$5.9091 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$14.3182 / unité
Voir la fiche technique →H5TC4G63AFR-H9A Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4 Gb |
| Organisation de la mémoire | 256M x 16 |
| Tension d'alimentation | 1.35 V |
| Débit de données | 1866 Mbps (PC3-14900) |
| Latence CAS | 13 |
| Boîtier | 96-ball FBGA |
| Température de fonctionnement | 0C to +95C (TC) |
| Lead-Free | Yes |
| Sans halogène | Yes |
| RoHS Compliant | Yes |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Self-Refresh | Yes |
| Auto-Refresh | Yes |
Configuration des broches de H5TC4G63AFR-H9A
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.35V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
Applications typiques
H5TC4G63AFR-H9A convient pour 6 applications: Ultra-Thin Laptops, Embedded Computing, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Ultra-Thin Laptops
The H5TC4G63AFR-H9A's 1.35V operation and 4Gb density make it ideal for ultra-thin laptops where power efficiency and space are critical. Its 1866 Mbps data rate ensures smooth multitasking and fast application loading. The 96-ball FBGA package allows for compact PCB designs, and the low voltage reduces heat generation, extending battery life. Designers can pair it with low-power processors like Intel Core U-series to achieve optimal performance-per-watt.
Recommandé
Embedded Computing
In embedded systems, the H5TC4G63AFR-H9A provides high-density memory with low power consumption, making it suitable for industrial PCs, single-board computers, and IoT gateways. Its 1.35V supply reduces overall system power, and the 1866 Mbps bandwidth supports real-time data processing. The device's on-die termination improves signal integrity in noisy environments, and its wide operating temperature range (0C to +95C) ensures reliability in industrial settings.
Recommandé
Networking Equipment
The H5TC4G63AFR-H9A is well-suited for networking routers and switches that require high-bandwidth memory for packet buffering and routing tables. Its 1866 Mbps data rate enables fast data throughput, while the 1.35V operation reduces power consumption in always-on equipment. The 96-ball FBGA package is compatible with standard PCB layouts, and the device's low power helps meet energy efficiency regulations. It can be used alongside network processors to handle high traffic loads.
Recommandé
Industrial PCs
For industrial PCs used in automation and control, the H5TC4G63AFR-H9A offers reliable memory with a wide temperature range and low power. Its 4Gb density supports demanding applications like machine vision and data logging. The 1.35V supply reduces heat, which is crucial in sealed enclosures. The device's high bandwidth ensures fast data access, and its RoHS compliance meets environmental standards. It can be paired with industrial-grade processors for robust performance.
Recommandé
Consumer Electronics
The H5TC4G63AFR-H9A is used in consumer devices like smart TVs, set-top boxes, and gaming consoles where high memory bandwidth and low power are essential. Its 1866 Mbps data rate supports 4K video streaming and smooth gaming. The 1.35V operation reduces energy consumption, contributing to Energy Star compliance. The compact FBGA package allows for slim device designs, and the device's reliability ensures long product life.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the H5TC4G63AFR-H9A provides high-density memory for navigation, media playback, and connectivity. Its 1.35V operation reduces power draw from the vehicle's electrical system, and the 1866 Mbps bandwidth supports high-resolution displays. The device's operating temperature range (0C to +95C) is suitable for cabin environments. It can be used with automotive-grade processors to deliver a responsive user experience.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5TC4G63AFR-H9A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5TC4G63AFR-H9I | H5TC4G63AFR-RDL | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK hynix | SK hynix | SK hynix | Micron |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1866 Mbps |
| CAS Latency | 13 | 13 | 11 | 13 |
| Operating Temperature | 0C to +95C | -40C to +95C | 0C to +95C | 0C to +95C |
Principaux différenciateurs
- Higher data rate than -RDL and -PBR variants (vs H5TC4G63AFR-RDL)
- Commercial temperature range vs industrial (vs H5TC4G63AFR-H9I)
- Same-brand availability and compatibility (vs MT41K256M16HA-125)
Notes de conception
For DDR3L routing at 1866 Mbps, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms for differential pairs. Keep trace lengths matched within 0.5mm for data and address/command groups. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The H5TC4G63AFR-H9A has a maximum operating temperature of +95C. Ensure adequate airflow or heatsinking in high-ambient environments. The 1.35V operation reduces power dissipation, but at high data rates, the device can still generate significant heat. Use thermal vias under the FBGA package to improve heat transfer to the PCB.
Use on-die termination (ODT) settings to match the motherboard's impedance and reduce reflections. For 1866 Mbps, set ODT to 40 ohms for data signals. Also, enable ZQ calibration during initialization to compensate for process variations. Follow the JEDEC DDR3L guidelines for VREF training to ensure reliable operation.
Informations de conformité
Lead-free and halogen-free per datasheet. RoHS compliant. REACH and conflict minerals status not specified in provided data.
