IPB100N12S305ATMA1 - 120V 100A OptiMOS N-MOSFET | Infineon
부품 번호: IPB100N12S305ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.35 | $2.35 |
| 10 | $2.12 | $21.20 |
| 100 | $1.89 | $189.00 |
| 500 | $1.68 | $840.00 |
| 1,000 | $1.49 | $1,490.00 |
| 5,000 | $1.25 | $6,250.00 |
IPB100N12S305ATMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in circuits. N-channel enhancement-mode MOSFETs require a positive gate-to-source voltage (VGS(th)) to turn on, and the OptiMOS family from Infineon uses advanced trench-cell silicon technology to minimize conduction losses (low RDS(on)) and switching losses (low Qg and Qrr). Within the broader power semiconductor taxonomy, this device sits in the hierarchy: power MOSFET -> discrete semiconductor -> N-channel MOSFET -> automotive-qualified MOSFET, and is typically used where moderate voltage (12 V/24 V/48 V automotive bus) and high current capability are required.
Key features include 185 nC total gate charge (Qg) for fast switching transitions, 100% avalanche-tested ruggedness, and a green-product (RoHS-compliant) bill of materials. The OptiMOS automotive process is designed for high pulse-current handling, low thermal resistance through the D2PAK tab, and reliable operation under harsh temperature and vibration conditions typical of under-hood automotive environments.
Typical applications include automotive 12 V and 24 V high-current switching, electric power steering (EPS), brake systems, electronic stability control (ESC), DC-DC converters in mild-hybrid (48 V) systems, motor drives (H-bridge low-side switches), solenoid drivers, and battery protection/disconnect circuits. The low RDS(on) minimizes conduction losses at 100 A continuous, reducing heatsink requirements.
Designers should note that the PG-TO263-3-1 package requires a properly soldered tab to the PCB copper pour to achieve the rated 300 W dissipation; thermal vias under the tab are critical. The 4.8 mOhm RDS(on) is typically specified at VGS = 10 V; gate drive at 4.5 V is supported but with significantly higher on-resistance. Ensure VGS stays below the +/-20 V absolute maximum to avoid oxide rupture.
This page synthesizes distributor pricing, drop-in alternatives (same-brand Infineon OptiMOS family and cross-brand equivalents), practical design notes, and AEC-Q101 compliance context not consolidated in a single manufacturer document.
드롭인 대체품: IPB100N12S305ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPB100N12S305ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Configuration, Continuous Drain Current (ID), Drain-Source Voltage (VDS), FET Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPB60R280P7ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.88 / 개
데이터시트 보기 →IPB100N04S4H2ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1.42 / 개
데이터시트 보기 →IPP100N12S3-05
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BSC076N04NDATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.82 / 개
데이터시트 보기 →SUM110N12-4M3P
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NVMYS1D2N06CL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPB100N12S305ATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS Power MOSFET |
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) | 100 A (Tc) |
| Power Dissipation (PD) | 300 W (Tc) |
| On-Resistance (RDS(on)) | 4.8 mOhm (typical) |
| Total Gate Charge (Qg) | 185 nC |
| 동작 온도 범위 | -55 C to +175 C (TJ) |
| 패키지 / 케이스 | PG-TO263-3-1 (D2PAK, surface mount) |
| 실장 유형 | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) |
| Automotive Qualification | AEC-Q101 Qualified |
| 습도 민감도 레벨 (MSL) | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | 100% Avalanche Tested |
| RoHS Compliance | RoHS Compliant (Green Product) |
IPB100N12S305ATMA1 핀 구성
| 핀 1 | Gate (G) — Gate drive input; apply VGS = 10 V typical for full RDS(on) rating |
| 핀 2 | Drain (D) — Power drain terminal; electrically connected to the exposed tab on the back of the package |
| 핀 3 | Source (S) — Power source return terminal |
안전 동작 영역 (SOA) - IPB100N12S305ATMA1
일반적인 애플리케이션
IPB100N12S305ATMA1 적합 용도: 7 애플리케이션s: Automotive 12V/24V High-Current Switching, Electric Power Steering (EPS) Motor Drive, 48V Mild-Hybrid DC-DC Converter, Motor Drive H-Bridge Low-Side Switch, Battery Protection and Disconnect Switch, Solenoid and Valve Drivers, Industrial 24V/48V DC Motor Control.
Automotive 12V/24V High-Current Switching
The IPB100N12S305ATMA1's 120 V VDS rating provides ample margin over 12 V and 24 V automotive bus transients including 24V jump-start and load-dump events. Its 4.8 mOhm RDS(on) at VGS=10V minimizes I^2R conduction losses when switching high currents to loads like glow plugs, fan motors, or heated screens. AEC-Q101 qualification and 175 C max junction temperature make it ideal for under-hood environments where ambient temperatures routinely reach 125 C. Typical PCB placement uses a TO-263 footprint with copper-pour heatsinking.
추천
Electric Power Steering (EPS) Motor Drive
EPS systems require MOSFETs that handle high peak currents during parking maneuvers while remaining efficient during normal driving. The IPB100N12S305ATMA1's 100 A continuous ID and 300 W power dissipation rating support the H-bridge low-side switches in EPS controllers up to ~3 kW peak. The 4.8 mOhm RDS(on) reduces conduction loss to about 48 W at 100 A (vs 75 W for a 7.5 mOhm part), which translates directly to lower heatsink mass and improved fuel economy. The AEC-Q101 qualification is mandatory for this safety-critical application.
추천
48V Mild-Hybrid DC-DC Converter
In 48 V mild-hybrid systems, the IPB100N12S305ATMA1 functions as the low-side synchronous rectifier or primary switch in buck/boost converters between the 48 V bus and 12 V auxiliary rail. The 120 V VDS rating covers 48 V nominal plus regen transients up to ~70 V without avalanche stress. The 185 nC Qg enables switching frequencies above 100 kHz, shrinking magnetics; the 4.8 mOhm RDS(on) keeps efficiency above 96% at 30 A continuous. Infineon rates this part for MSL1 up to 260 C reflow, compatible with standard SMT lines.
추천
Motor Drive H-Bridge Low-Side Switch
Brushed DC motor H-bridges in applications like seat adjusters, window lifts, and fuel pumps use the IPB100N12S305ATMA1 as the low-side switch. At 100 A continuous rating, it can drive motors up to approximately 1.5 kW at 12 V without paralleling devices. The TO-263 package allows compact PCB layout, and the 4.8 mOhm RDS(on) at full VGS=10V drive keeps conduction loss under 50 W per device at full load. Avalanche ruggedness handles the back-EMF energy when commutating inductive loads.
추천
Battery Protection and Disconnect Switch
The IPB100N12S305ATMA1 serves as a battery disconnect MOSFET in 12 V and 24 V automotive battery management systems, where it must carry full load current continuously and interrupt fault currents up to 100 A. Its 100% avalanche-tested rating is critical for handling the inductor energy stored in the wiring harness during abrupt disconnect events. The 4.8 mOhm RDS(on) contributes minimal voltage drop, preserving usable battery capacity. AEC-Q101 and 175 C junction rating suit under-hood or in-cabin battery junction box mounting.
추천
Solenoid and Valve Drivers
Automotive transmission solenoids, EGR valves, and active suspension valves require MOSFETs capable of high peak current pulses with low duty cycle. The IPB100N12S305ATMA1 supports peak currents well above 100 A for short durations thanks to its thermal mass and 300 W dissipation rating. The 120 V VDS comfortably handles solenoid flyback voltages when clamped with a 100 V TVS or freewheeling diode. Multiple solenoids can be driven in parallel from a single PCB section, each with its own D2PAK MOSFET for thermal isolation.
추천
Industrial 24V/48V DC Motor Control
Beyond automotive, the IPB100N12S305ATMA1 is widely used in industrial 24 V and 48 V brushless DC motor drives, where its 120 V VDS rating tolerates inductive kickback from motor windings. The 100 A continuous current supports motors up to approximately 2.4 kW at 24 V. The TO-263 D2PAK package simplifies assembly on standard SMT lines versus traditional TO-247 through-hole parts, reducing manufacturing cost. Industrial applications benefit from the same AEC-Q101 reliability margin for extended service life.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPB100N12S305ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPB60R280P7ATMA1 | IPB100N04S4H2ATMA1 | SUM110N12-4M3P | NVMYS1D2N06CL |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Vishay | onsemi |
| Package | PG-TO263-3-1 (D2PAK) | PG-TO263-3-1 (D2PAK) - same | PG-TO263-3-1 (D2PAK) - same | TO-263 (D2PAK) - same | TO-263 (D2PAK) - same |
| Drain-Source Voltage (VDS) | 120 V | 600 V (higher voltage class) | 40 V (lower voltage class) | 120 V | 60 V (lower voltage) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 (automotive grade) | AEC-Q101 |
주요 차별점
- AEC-Q101 qualified with 175 C max junction temperature (vs SUM110N12-4M3P)
- 4.8 mOhm RDS(on) at 120 V VDS with low Qg of 185 nC (vs IPB60R280P7ATMA1)
- MSL1 moisture rating up to 260 C peak reflow (vs NVMYS1D2N06CL)
설계 노트
Estimated: at 100 A continuous drain current and 4.8 mOhm RDS(on), conduction loss is approximately P = I^2 x R = 100 x 100 x 0.0048 = 48 W. With the D2PAK (PG-TO263-3-1) thermal resistance junction-to-ambient of approximately 40 C/W on a 1 oz copper pour, junction temperature rise would be ~1920 C above ambient - clearly impossible. Therefore the part must be heatsunk via the tab soldered to a substantial copper pour (>= 6 square inches) or external heatsink to achieve the 300 W Tc-rated dissipation. Always use thermal vias under the D2PAK tab to move heat into inner PCB copper layers.
The D2PAK exposed tab is internally connected to the drain (pin 2). When designing the PCB, the footprint must include a large copper pad under the tab with an array of thermal vias (typically 6-12 vias, 0.3-0.5 mm drill) connecting top copper to bottom copper or inner planes. Gate and source traces should be routed away from the drain switching node to minimize dv/dt-induced gate bounce. A small gate-source resistor (10-100 kOhm) is recommended to prevent inadvertent turn-on from Miller coupling during fast switching transitions.
Critical pitfall: never exceed VGS = +/-20 V absolute maximum; gate oxide rupture is permanent. Use a gate-source Zener clamp (typically 12-16 V) when driving from a higher-voltage supply. Also, the 4.8 mOhm RDS(on) spec assumes VGS = 10 V - if driven from a 5 V logic-level gate, RDS(on) can rise to 7-10 mOhm, doubling conduction loss. Finally, ensure the switching frequency and duty cycle stay within the SOA curve; this part is rated for DC operation at 100 A only when properly heatsunk.
Fast switching edges from a 4.8 mOhm MOSFET with 185 nC Qg can generate significant EMI. To minimize radiated emissions, keep the high-di/dt loop (drain-switch node to ground return) as small as possible, using a low-ESR ceramic bypass capacitor directly at the drain. Add a small RC snubber (10-100 Ohm + 1-10 nF) across drain-source if ringing exceeds 20% of VDS. Gate drive should use a dedicated gate driver IC rather than a logic-level GPIO to achieve clean 10 V gate drive and fast rise/fall times.
규정 준수 정보
RoHS compliant per Infineon OptiMOS product family designation. AEC-Q101 (automotive) qualified - distinct from AEC-Q100. MSL1 moisture rating up to 260 C peak reflow. 100% avalanche tested. Green product designation confirms halogen-free and RoHS compliance.
