IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon
부품 번호: IPD60R360P7SAUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.21 | $12.10 |
| 100 | $0.94 | $94.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
IPD60R360P7SAUMA1 개요
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and switch electrical energy in power-electronics systems. The CoolMOS P7 superjunction MOSFET family occupies the high-voltage branch of the discrete MOSFET tree (high-voltage power MOSFET -> MOSFET -> transistor -> discrete semiconductor), and it is widely used in switched-mode power supplies, power-factor correction, and motor drive stages where 500 V to 700 V blocking capability and low conduction loss are required.
Key parametric highlights include a 600 V drain-source breakdown voltage (V(BR)DSS), a typical RDS(on) of 360 mOhm at VGS = 10 V, a gate threshold voltage in the 3.0 V to 4.5 V range, and a low gate charge that enables high switching frequencies. The integrated body diode is optimized for hard-commutation duty in PFC and LLC topologies, and the TO-252 outline supports standard DPAK land patterns for direct PCB compatibility with second-source designs.
In PFC boost, LLC half-bridge, and flyback converters, the IPD60R360P7SAUMA1 is typically deployed as the main switching element where its low RDS(on) reduces conduction loss and its fast switching speed shrinks magnetic components. Industrial SMPS, LED lighting drivers, and solar inverter auxiliary rails benefit similarly from its thermal and switching balance.
When laying out the PCB, keep the source-tab copper pour large enough to keep the junction temperature within SOA limits and minimize parasitic source inductance to suppress turn-on ringing. Pair the gate driver with a small gate-source resistor (typically 10 ohm to 47 ohm) to damp dv/dt-induced ringing without sacrificing switching loss.
This page synthesizes distributor pricing, drop-in CoolMOS alternatives, and practical design notes not found in the manufacturer datasheet alone, giving power-supply engineers a single-source reference for part selection and sourcing.
드롭인 대체품: IPD60R360P7SAUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPD60R360P7SAUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Operating Temperature Range, Technology, Package, Drain-Source Voltage (VDS), MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPD60R360P7
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPD80R600P7ATMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.92 / 개
데이터시트 보기 →IPB60R280P7ATMA1
✅ 드롭인✓ 재고 있음
$0.88 / 개
데이터시트 보기 →IPL60R105P7AUMA1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPD65R380E6ATMA1
✅ 드롭인✓ 재고 있음
$0.65 / 개
데이터시트 보기 →IPD60R360P7SAUMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | 3.0 V to 4.5 V (typ) |
| 패키지 / 케이스 | PG-TO252-3 (DPAK) |
| 실장 유형 | Surface Mount |
| 핀 수 | 3 |
| 동작 온도 범위 | -55C to +150C (junction) |
| RoHS 상태 | Compliant |
| MSL 레벨 | 1 (per JEDEC J-STD-020) |
| Channel Type | N-Channel |
IPD60R360P7SAUMA1 핀 구성
| 핀 1 | Gate — MOSFET gate drive input |
| 핀 2 | Drain — MOSFET drain (internally connected to the back tab) |
| 핀 3 | Source — MOSFET source (signal and power return) |
안전 동작 영역 (DC, TC = 25C)
일반적인 애플리케이션
IPD60R360P7SAUMA1 적합 용도: 6 애플리케이션s: Power Factor Correction (PFC) Boost Stage, LLC Half-Bridge Resonant Converter, Industrial Switched-Mode Power Supply (SMPS), LED Lighting Drivers, Solar Inverter Auxiliary Power Supply, EV Charging Station Auxiliary Supply.
Power Factor Correction (PFC) Boost Stage
The IPD60R360P7SAUMA1 is well matched to continuous-conduction-mode PFC boost converters in 75 W to 150 W universal-input power supplies, where its 600 V V(BR)DSS easily clears the 385 V rectified-bus peak and its 360 mOhm RDS(on) keeps conduction loss under 0.7 W at full load. The CoolMOS P7 body-diode ruggedness removes the need for an external anti-parallel diode in hard-commutation PFC designs, simplifying the BOM. Place it on a DPAK copper pour of at least 1 square inch to keep RthJA in the 40 C/W range and junction temperature below 110 C in a 100 W PFC.
추천
LLC Half-Bridge Resonant Converter
In LLC half-bridge primary-side switching, the IPD60R360P7SAUMA1's low gate charge (Qg) and low output capacitance (Coss) reduce circulating current and enable switching frequencies up to 150 kHz, shrinking the resonant tank magnetics by 20% to 30% versus older P6 designs. The 600 V rating covers 400 V rectified-bus rails with ample margin, and the DPAK package supports standard half-bridge layouts with two TO-252 parts side-by-side on a single thermal copper pour.
추천
Industrial Switched-Mode Power Supply (SMPS)
The IPD60R360P7SAUMA1 is a workhorse main switch for industrial 24 V / 48 V auxiliary SMPS in factory automation, where its 41 W dissipation rating and 9 A continuous drain current comfortably support 100 W to 200 W continuous output. The TO-252 (DPAK) footprint enables automated SMT assembly on high-volume production lines, while the CoolMOS P7 superjunction technology cuts switching loss 30% versus the prior P6 generation, improving efficiency from 92% to 95% at full load.
추천
LED Lighting Drivers
The IPD60R360P7SAUMA1 powers flyback or buck-boost stages in 50 W to 150 W commercial LED drivers, where its low RDS(on) reduces thermal stress on the densely packed driver PCB and its 600 V breakdown withstands harsh surge events on rectified mains. CoolMOS P7's built-in ESD protection (2 kV HBM) and improved avalanche ruggedness minimize field failures in outdoor and industrial luminaires where transient events are common.
추천
Solar Inverter Auxiliary Power Supply
Inside string-inverter auxiliary supplies that power gate drivers, fans, and communication isolated rails, the IPD60R360P7SAUMA1 serves as the primary-side switch in a flyback topology. The 600 V V(BR)DSS rating tolerates the 600 V DC-link of single-phase string inverters with proper derating, while the DPAK's tab-to-heatsink copper pour keeps junction temperatures well below 125 C even at 85 C ambient outdoor operating temperatures.
추천
EV Charging Station Auxiliary Supply
Level 1 / Level 2 EV charger onboard auxiliary supplies that derive 12 V and 24 V rails for control electronics and contactor coils benefit from the IPD60R360P7SAUMA1's CoolMOS P7 superjunction performance in a compact DPAK outline. The 600 V rating comfortably handles PFC output rails around 390 V to 410 V DC, while the 9 A continuous rating supports 100 W continuous auxiliary loads typical of 7 kW to 22 kW charger designs.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPD60R360P7SAUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPD60R360P7 | IPD80R600P7ATMA1 | IPB60R280P7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 800 V | 600 V | 650 V |
| Continuous Drain Current (ID) | 9 A | 9 A | 6 A | 12 A | 8.5 A |
| RDS(on) at VGS=10V | 360 mOhm | 360 mOhm | 600 mOhm | 280 mOhm | 380 mOhm |
| Technology Generation | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | CoolMOS E6 |
| Power Dissipation (PD) | 41 W | 41 W | 38 W | 45 W | 40 W |
| Unit Price (1k qty) | 0.65 USD | 0.65 USD (same die) | 0.75 USD | 1.05 USD | 0.72 USD |
주요 차별점
- Best-in-class price/performance ratio for 600 V superjunction MOSFETs in DPAK (vs IPB60R280P7ATMA1)
- Hard-commutation-rugged body diode eliminates external anti-parallel diode in PFC (vs IPD65R380E6ATMA1)
- Industry-standard TO-252 footprint enables direct second-sourcing (vs Custom-packaged MOSFETs)
설계 노트
The PG-TO252-3 (DPAK) thermal resistance RthJA is approximately 40 C/W on a 1-square-inch 2 oz copper pour on FR4 (Estimated: based on JEDEC EIA/JESD51 footprint at 2 oz copper; verify on final PCB). At full 9 A continuous drain current with VDS = 600 V worst-case, conduction loss alone can reach 30 W, requiring either a larger copper pour (2 sq inch minimum) or forced-air cooling to keep Tj below 125 C.
Minimize the source-inductance loop between the IPD60R360P7SAUMA1 source pin, the gate-driver ground, and the decoupling capacitor. A loop area under 1 cm squared keeps VGS ringing below 5 V peak during 600 V / 9 A switching transitions. Place a 10 ohm to 47 ohm gate-source resistor close to the gate pin to damp high-frequency ringing without increasing switching loss by more than 5%.
Do not exceed VGS = +/-20 V static or +/-30 V transient; the CoolMOS P7 gate oxide is robust but excessive gate ringing from poor layout can punch through. Ensure the gate driver can sink 2 A peak to discharge the gate quickly at turn-off - undersized drivers cause slow turn-off and cross-conduction in half-bridge topologies. Always include a 100 kohm gate-source pulldown resistor to hold the MOSFET off during controller startup.
규정 준수 정보
RoHS and REACH compliant per Infineon product declaration. Halogen-free PG-TO252-3 molding compound. Not AEC-Q100 qualified - refer to IPD60R360P7AUMA1 automotive variants if automotive-grade is required.
