2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon
부품 번호: 2ED2106S06FXUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.31 | $13.10 |
| 100 | $1.12 | $112.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.85 | $850.00 |
| 2,500 | $0.78 | $1,950.00 |
2ED2106S06FXUMA1 개요
A gate driver IC is a specialized power management integrated circuit that sits between a low-power control signal (e.g. a microcontroller PWM output) and the high-power gate of a MOSFET or IGBT. It provides level shifting, isolation between control and power domains, and the current amplification needed to charge and discharge the gate capacitance quickly. Half-bridge drivers like the 2ED2106S06FXUMA1 contain both a high-side channel (floating, level-shifted to the switch node) and a low-side channel (referenced to ground), making them the standard building block for synchronous buck, synchronous boost, half-bridge, and full-bridge topologies in switch-mode power supplies (SMPS), motor drives, and induction heaters.
Key features include integrated bootstrap diode that reduces external BOM count, 650 V offset voltage tolerance that supports 400 V and 600 V bus rails, under-voltage lockout (UVLO) for both VCC and VBS rails to prevent spurious switching, and matched propagation delay between channels to minimize dead-time skew. The PG-DSO-8-69 package uses wide creepage distances suitable for high-voltage applications.
The architecture pairs a floating high-side channel driven by a level-shift stage with a ground-referenced low-side channel, both controlled by a single PWM input. The internal bootstrap diode eliminates the need for an external discrete diode, simplifying layout and reducing parasitic inductance in the high-side supply path. Logic inputs accept CMOS/TTL levels, allowing direct interface with 3.3 V microcontrollers without level shifters.
Typical applications include switch-mode power supplies (SMPS), motor control inverters, DC-DC converters, induction heating, uninterruptible power supplies (UPS), solar inverters, and Class-D audio amplifiers. The 0.7 A sink current is well-matched to IGBTs in the 10-30 A range and to mid-power MOSFETs in motor-drive half-bridges.
When designing with this driver, observe the bootstrap capacitor value recommendation from the manufacturer datasheet to keep the high-side supply ripple within UVLO hysteresis; too small a capacitor causes high-side UVLO tripping under heavy gate-charge loads. Place the VCC bypass capacitor close to the IC and minimize the high-side loop inductance for best switching performance.
드롭인 대체품: 2ED2106S06FXUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 2ED2106S06FXUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Configuration, Number of Outputs, Propagation Delay (typ.), Input Logic Compatibility.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
2ED2108S06FXUMA1
✅ 드롭인✓ 재고 있음
$0.2987 / 개
데이터시트 보기 →IRS21834STRPBF
✅ 드롭인✓ 재고 있음
$1.45 / 개
데이터시트 보기 →IRS2181STRPBF
✅ 드롭인✓ 재고 있음
$0.62 / 개
데이터시트 보기 →IR2114SSPBF
✅ 드롭인✓ 재고 있음
$3.7 / 개
데이터시트 보기 →IRS2104STRPBF
✅ 드롭인✓ 재고 있음
$0.45 / 개
데이터시트 보기 →2ED2106S06FXUMA1 최대 정격 & 전기적 특성
| Offset Voltage (Voffset max) | 650 V |
| Configuration | High-Side and Low-Side (Half-Bridge) |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.7 A |
| Input Logic Compatibility | CMOS, TTL |
| Propagation Delay (typ.) | 100 ns |
| 출력 수 | 2 (1 high-side, 1 low-side) |
| Number of Drivers | 2 |
| 핀 수 | 8 |
| 패키지 | PG-DSO-8-69 (DSO-8) |
| 실장 유형 | Surface Mount |
| Bootstrap Diode | Integrated |
| 동작 온도 범위 | -40C to +125C |
| Packaging | Tape & Reel |
| 출력 유형 | Half-Bridge, Non-Inverting |
2ED2106S06FXUMA1 핀 구성
| 핀 1 | VCC — Low-side and logic supply voltage (10-20 V) |
| 핀 2 | HIN — Logic input for high-side gate driver (CMOS/TTL) |
| 핀 3 | LIN — Logic input for low-side gate driver (CMOS/TTL) |
| 핀 4 | GND — Ground (logic and low-side return) |
| 핀 5 | LO — Low-side gate drive output |
| 핀 6 | VS — High-side floating supply return / switch node |
| 핀 7 | HO — High-side gate drive output |
| 핀 8 | VB — High-side floating supply (bootstrap) |
일반적인 애플리케이션
2ED2106S06FXUMA1 적합 용도: 7 애플리케이션s: Switch-Mode Power Supplies (SMPS), Motor Control Inverters, Solar / Photovoltaic Inverters, Uninterruptible Power Supplies (UPS), Induction Heating Cooktops, Class-D Audio Amplifiers, EV Charging Stations / Onboard Chargers.
Switch-Mode Power Supplies (SMPS)
The 2ED2106S06FXUMA1 fits SMPS applications requiring 600 V bus drive capability in a compact 8-pin DSO footprint. Its 650 V offset voltage tolerance supports 400 V PFC output rails in telecom and server power supplies, while the integrated bootstrap diode eliminates an external component and reduces the high-side loop inductance. The 0.29 A source / 0.7 A sink current is well-matched to mid-power MOSFETs in the 600 V / 20-30 A class. The 100 ns propagation delay enables switching frequencies up to several hundred kHz, suitable for resonant LLC and phase-shifted full-bridge topologies. According to the Infineon datasheet, the device's UVLO protection on both VCC and VBS prevents spurious switching during startup and fault events.
추천
Motor Control Inverters
The 2ED2106S06FXUMA1 is well-suited for motor control inverters in industrial drives, particularly for three-phase inverter stages operating from 400-480 V AC rectified to ~600 V DC. Its 0.7 A sink current efficiently discharges the gate charge of 600 V / 20 A class IGBTs used in variable-frequency drives (VFDs), while the integrated bootstrap diode simplifies the gate-drive PCB around each phase leg. The matched propagation delay between high-side and low-side channels minimizes dead-time skew, reducing switching losses in the inverter. According to the manufacturer datasheet, the wide creepage of the PG-DSO-8-69 package supports the high dv/dt environment of motor switching. Pair with isolated gate-drive or bootstrap isolation for safe high-side operation in floating-string architectures.
추천
Solar / Photovoltaic Inverters
The 2ED2106S06FXUMA1 is ideal for residential and small commercial photovoltaic inverters operating from 600 V DC strings. The 650 V offset rating provides comfortable margin above the maximum string voltage, while the 0.29 A source current drives IGBTs and MOSFETs in the half-bridge inverter stage with switching frequencies typically 16-50 kHz. According to the Infineon datasheet, the integrated bootstrap diode reduces BOM count in space-constrained micro-inverter designs, and the wide-creepage DSO-8 package handles the harsh temperature and humidity environment of outdoor PV installations. Pair with the Infineon CoolMOS or TRENCHSTOP families for a complete PV inverter solution.
추천
Uninterruptible Power Supplies (UPS)
The 2ED2106S06FXUMA1 is well-suited for UPS systems requiring reliable half-bridge gate drive at 400-600 V DC bus. The integrated bootstrap diode and 8-pin footprint simplify the gate-drive card layout in online double-conversion UPS topologies, where space is at a premium. The 0.7 A sink current handles 600 V MOSFETs in the 15-25 A class typical of single-phase 5-10 kVA UPS systems. According to the manufacturer datasheet, the device's under-voltage lockout protects the MOSFETs from partial-gate drive during brownout events, when the bus voltage sags and the bootstrap capacitor may not fully charge. The wide temperature range (-40C to +125C) supports outdoor UPS cabinets.
추천
Induction Heating Cooktops
The 2ED2106S06FXUMA1 fits induction heating cooktop applications operating from rectified 230 V / 400 V AC mains. Its 650 V offset tolerance supports the rectified bus voltage with margin, while the 0.29 A source / 0.7 A sink drive strength drives 600 V / 30-50 A IGBTs in the resonant tank at switching frequencies typically 20-100 kHz. According to the Infineon datasheet, the integrated bootstrap diode reduces component count on the cooktop main board, and the matched channel propagation delay ensures balanced timing in the half-bridge resonant converter. Pair with IGBTs from the IKWH or IKW40N65 family for a complete induction heating solution.
추천
Class-D Audio Amplifiers
The 2ED2106S06FXUMA1 supports Class-D audio amplifier output stages where a half-bridge drives the LC low-pass reconstruction filter into the speaker. While most Class-D amplifiers operate from low-voltage rails (24-50 V), this driver's wide voltage tolerance is also useful in higher-power professional and automotive Class-D amplifiers using 100-300 V bus rails. The 100 ns propagation delay contributes to ultra-low distortion at audio frequencies, and the matched high-side / low-side timing minimizes dead-time crossover distortion. According to the manufacturer datasheet, the CMOS/TTL logic inputs interface directly with the audio modulator DSP. The 8-pin DSO footprint suits compact amplifier modules.
추천
EV Charging Stations / Onboard Chargers
The 2ED2106S06FXUMA1 is suitable for onboard EV chargers and Level-2 AC charging stations where the PFC and DC-DC stages operate from 400 V rectified bus. The 650 V offset voltage handles the rectified mains with comfortable margin, while the 0.29 A source / 0.7 A sink current drives 600 V MOSFETs in the totem-pole PFC and isolated DC-DC stages. According to the Infineon datasheet, the integrated bootstrap diode simplifies the gate-drive layout in space-constrained onboard charger modules, and the -40C to +125C temperature range supports under-hood automotive environments. Pair with the EiceDRIVER family for reinforced isolation in high-voltage battery systems.
추천
추천 제품 요약
엔지니어링 참조 데이터: 2ED2106S06FXUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 2ED2108S06FXUMA1 | IRS21834STRPBF | IRS2181STRPBF | IR2114SSPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8-69 (DSO-8) | PG-DSO-8-69 | SOIC-8 | SOIC-8 | SOIC-8 |
| Offset Voltage (max) | 650 V | 650 V | 600 V | 600 V | 600 V |
| Source Current (typ.) | 0.29 A | 0.5 A | 0.2 A | 0.2 A | 0.2 A |
| Sink Current (typ.) | 0.7 A | 1.0 A | 0.4 A | 0.4 A | 0.4 A |
| Bootstrap Diode | Integrated | Integrated | External required | External required | External required |
| Logic Input Compatibility | CMOS, TTL | CMOS, TTL | CMOS, TTL | CMOS, TTL | CMOS, TTL |
주요 차별점
- Integrated bootstrap diode reduces BOM and layout complexity (vs IRS21834STRPBF)
- Higher drive current than older 600V-class drivers (vs IRS2181STRPBF)
- Wide-creepage package supports 600V+ bus rails (vs IR2114SSPBF)
설계 노트
Bootstrap capacitor sizing is critical for high-side operation. Use a low-ESR ceramic capacitor (typically 100 nF to 1 uF, 25 V or higher rated) between VB and VS. The bootstrap capacitor must supply the gate charge of the high-side MOSFET plus the quiescent current of the high-side channel during each switching cycle. Too small a capacitor causes VBS to sag below the UVLO threshold under heavy gate-charge loads, resulting in high-side UVLO tripping and loss of gate drive. Validate with worst-case duty cycle and minimum switching frequency.
Minimize the high-side gate-drive loop inductance by placing the bootstrap capacitor close to pins VB and VS, and routing the HO trace directly to the MOSFET gate with minimal length. The high-side loop includes HO, the MOSFET gate-source, VS, and the bootstrap capacitor - any parasitic inductance in this loop causes ringing, overshoot, and possible gate-oxide stress. Use a ground plane on the bottom layer for the low-side return, and keep the LIN/HIN logic traces away from the HO/VS switching nodes to avoid capacitive coupling that could cause spurious triggering.
Estimated: At VCC=15 V and switching frequency 50 kHz into a 30 nC gate charge MOSFET, the gate-drive power dissipation is approximately VCC * Qg * fsw = 15 V * 30 nC * 50 kHz = 22.5 mW per channel, or 90 mW total. The PG-DSO-8-69 package with reasonable copper pour (1 square inch) provides adequate thermal margin. For higher switching frequencies (above 200 kHz) or larger MOSFETs (Qg above 100 nC), verify junction temperature using the manufacturer's thermal resistance data and derate as needed.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (choose automotive-grade variants for vehicle applications). Halogen-free and lead-free per Infineon environmental compliance data.
