H5CG24AGBDX022 - DDR5 SDRAM Component | SK hynix
부품 번호: H5CG24AGBDX022 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
H5CG24AGBDX022 개요
A DRAM component such as this is the fundamental building block of memory subsystems: multiple DRAM dies are mounted onto UDIMMs, RDIMMs, or soldered directly onto PCBs, where a memory controller issues read and write commands at high data rates. DDR5 represents the fifth generation of the DDR SDRAM family, evolving from DDR4 with higher bank counts, on-die ECC, decision-feedback equalization (DFE), and a lower nominal supply voltage for improved power efficiency.
The H5CG24AGBDX022 decodes as follows: H5CG identifies SK hynix DDR5 SDRAM, the density/speed code block defines the die configuration, AGB denotes the organization, D indicates the process/fabrication generation, and X022 encodes package and speed-grade options. Per SK hynix's part-number decoder documentation, the H5CG family supports DDR5 operation with 1.1V VDD, on-die ECC, and high-speed signaling engineered for DDR5 interface rates in the multi-gigabit-per-second range. Exact density, speed bin, and package dimensions for this specific ordering code are marked as data-needed in the specifications table below and must be confirmed against the official SK hynix datasheet via the manufacturer's part-number decoder.
Key architectural features of the H5CG DDR5 family include 32 independent banks (grouped into 8 bank groups), burst length 16, dual 32-bit sub-channel support in module contexts, and integrated on-die ECC that corrects internal errors before they reach the data bus, improving reliability without host overhead.
Typical applications include server main memory for cloud and enterprise computing, desktop and workstation UDIMMs, embedded computing platforms, and AI/ML accelerator host memory where bandwidth density is critical.
When designing with DDR5 components, follow SK hynix layout guidelines for fly-by command/address routing, DQ length matching, and reference voltage decoupling; JEDEC compliance of the host controller is essential for interoperability.
This page synthesizes cross-reference guidance, drop-in alternatives from the same SK hynix family, and structured FAQs not found in the raw manufacturer documentation.
드롭인 대체품: H5CG24AGBDX022 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5CG24AGBDX022 (동일 폼 팩터 및 풋프린트) — 차이점: Product Family, Burst Length, Density, Interface Type, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5CG28AGBDX022
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1 / 개
데이터시트 보기 →H5CG26AGBDX021
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$4.95 / 개
데이터시트 보기 →H5CG44AGBDX018
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$4.48 / 개
데이터시트 보기 →H5CG44AGBDX018N
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →H5CG34MEBDX030
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$5.75 / 개
데이터시트 보기 →H5CG24AGBDX022 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| Manufacturer Series | H5CG Series (SK hynix DDR5) |
| Supply Voltage VDD | 1.1 V (DDR5 nominal, per SK hynix DDR5 family) |
| Bank Count | 32 banks / 8 bank groups (DDR5 architecture) |
| Burst Length | 16 (BL16, DDR5 standard) |
| ECC | On-die ECC (DDR5 standard feature) |
| 인터페이스 유형 | DDR5 (DFE-based receiver) |
| 실장 유형 | Surface Mount (BGA) |
| JEDEC Standard | DDR5 SDRAM JEDEC standard compatible |
H5CG24AGBDX022 standard 핀 구성 가이드
H5CG24AGBDX022(standard 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5CG24AGBDX022.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5CG24AGBDX022 적합 용도: 6 애플리케이션s: Server Main Memory, Desktop and Workstation UDIMM, Embedded and Industrial Computing, AI and Machine Learning Host Memory, Networking and Telecom Equipment, Consumer Electronics and Set-Top Platforms.
Server Main Memory
The H5CG24AGBDX022 fits server main-memory subsystems where SK hynix DDR5 components populate RDIMMs for cloud, virtualization, and enterprise computing. DDR5's 32-bank architecture and burst length 16 raise effective memory-level parallelism compared to DDR4, while the 1.1V nominal supply reduces per-DRAM power - a decisive factor in data centers where thousands of DIMMs operate continuously. On-die ECC corrects internal cell errors before data reaches the bus, improving RAS without host-side ECC overhead. In an RDIMM context, the component operates through a registered clock driver with fly-by command/address routing, and its DFE-based receivers sustain multi-gigabit data rates across the sub-channel topology defined in JEDEC DDR5 module specifications.
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Desktop and Workstation UDIMM
For desktop and workstation platforms, the H5CG24AGBDX022 serves as a DRAM component on unbuffered dual in-line memory modules (UDIMMs), where consumer DDR5 memory controllers from Intel and AMD platforms drive it at JEDEC-standard speeds. The dual 32-bit sub-channel architecture of DDR5 improves efficiency for mainstream workloads such as content creation, CAD, and compilation. SK hynix H5CG-series components are widely used in branded consumer modules due to their mature process generation (the D code in this ordering block). Designers of custom SODIMM or CAMM2 form factors also reference this component class, relying on on-die ECC for silent error containment and BL16 burst operation for bandwidth efficiency at mainstream module capacities.
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Embedded and Industrial Computing
In embedded controllers, edge servers, and industrial PCs, soldered-down DDR5 components such as the H5CG24AGBDX022 replace SODIMM sockets to save board space and improve mechanical reliability under vibration. The 1.1V supply simplifies power tree design with a single main DDR5 rail plus VDDQ, and on-die ECC reduces uncorrected-error rates in long-lifecycle deployments where field service is costly. Industrial designs typically run memory at conservative JEDEC speed bins for thermal margin, which the X022 speed suffix options support. Layout follows the same fly-by CA routing and length-matched DQ rules as module designs, with the component fitted directly alongside the SoC using the reference design guidelines in the SK hynix datasheet.
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AI and Machine Learning Host Memory
AI training and inference hosts demand maximum memory bandwidth to feed GPU and accelerator workloads, making SK hynix DDR5 components like the H5CG24AGBDX022 a common choice for host-side main memory. DDR5's doubled bank groups and BL16 bursts sustain higher sustained bandwidth per channel than DDR4 at similar clock rates, directly improving data-loader throughput for large-model training. The 1.1V operation keeps platform power budgets available for accelerators rather than memory. Memory subsystems for AI servers typically populate all channels with identical density components to maximize interleaving, so matching this part's exact density/organization block across all DIMMs is essential for symmetric bandwidth, which is why same-code ordering matters in AI platform BOMs.
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Networking and Telecom Equipment
Routers, switches, and 5G baseband units use soldered DDR5 components like the H5CG24AGBDX022 for packet buffers, flow tables, and control-plane memory. The on-die ECC feature is particularly valuable in telecom designs where silent data corruption in forwarding tables causes packet drops, and the lower 1.1V rail reduces total system power in always-on network infrastructure. Equipment vendors qualify SK hynix H5CG-series components through long-term availability agreements and run them at reduced speed bins for thermal margins in sealed enclosures. The FBGA package withstands the thermal cycling profiles typical of outdoor telecom hardware when board-level reliability rules from the datasheet application section are followed.
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Consumer Electronics and Set-Top Platforms
Smart TVs, set-top boxes, and gaming peripherals increasingly adopt soldered-down DDR5 components for unified-memory SoC designs. The H5CG24AGBDX022 provides main memory for such platforms where the H5CG series' mature process generation delivers competitive cost per gigabit. On-die ECC improves playback reliability for 4K/8K streaming where memory errors would manifest as visible artifacts, and the low 1.1V supply supports energy-star compliant standby power targets. Consumer designs typically pair this component with mid-range application SoCs that implement DDR5 controllers at JEDEC-standard speed bins, following the reference routing in the SoC vendor's layout guide alongside the SK hynix datasheet termination and decoupling recommendations.
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추천 제품 요약
엔지니어링 참조 데이터: H5CG24AGBDX022 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5CG28AGBDX022 | H5CG26AGBDX021 | H5CG44AGBDX018 | H5CG34MEBDX030 |
|---|---|---|---|---|---|
| Package | FBGA (DDR5 component package, per ordering code) | FBGA (DDR5 component package) - same package family | FBGA (DDR5 component package) - same package family | FBGA (DDR5 component package) - same package family | FBGA (DDR5 component package) - same package family |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Memory Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V (DDR5 nominal) | 1.1 V (DDR5 nominal) | 1.1 V (DDR5 nominal) | 1.1 V (DDR5 nominal) | 1.1 V (DDR5 nominal) |
| Density Block (per SK hynix decoder) | 24A | 28A | 26A | 44A | 34M |
| Speed/Package Suffix | X022 | X022 - same suffix | X021 | X018 | X030 |
| On-die ECC | Yes (DDR5 standard) | Yes (DDR5 standard) | Yes (DDR5 standard) | Yes (DDR5 standard) | Yes (DDR5 standard) |
| Banks / Burst Length | 32 banks / BL16 | 32 banks / BL16 | 32 banks / BL16 | 32 banks / BL16 | 32 banks / BL16 |
주요 차별점
- Same speed/package suffix X022 for drop-in family matching (vs H5CG28AGBDX022)
- Mature process generation in the H5CG family (vs H5CG34MEBDX030)
- Lower density tier for power-sensitive designs (vs H5CG44AGBDX018)
설계 노트
DDR5 routing requires fly-by command/address topology with VDDQ termination and tightly length-matched DQ/DQS groups. Follow the layout rules in the SK hynix DDR5 datasheet package section and your SoC vendor's memory design guide. Maintain controlled impedance (single-ended ~40 ohm for DQ per typical DDR5 designs), solid VDDQ planes, and per-ball decoupling capacitors placed within 2 mm of supply balls. Verify the exact organization (x8 vs x16) before finalizing the footprint, since ball assignments differ between organizations in JEDEC DDR5.
The 1.1V VDD rail of DDR5 requires a regulator with fast transient response because DRAM read/write currents switch at multi-gigabit rates. Budget VDDQ termination current separately and verify power integrity with target impedance analysis at the memory controller interface. Estimated: total DRAM rail current scales with die density and utilization - size the VRM per the datasheet IDD specification table for your speed bin (marked DATA_NEEDED in specs) plus 20-30% margin for worst-case bank-interleaved access patterns.
Do not substitute DDR5 ordering codes without re-qualification: each code block in H5CG24AGBDX022 encodes density, organization, process generation, and speed grade per the SK hynix part-number decoder. Mixing dies of different process generations (the D code position) on the same channel can shift timing margins and fail read-training. Always update SPD data and memory reference files when changing ordering codes, and confirm the speed bin supported by your memory controller before BOM substitution.
규정 준수 정보
Compliance statements were not present in the verified web data. Confirm RoHS/REACH material declarations via the SK hynix support portal (product.skhynix.com) before shipping to regulated markets.
