K3KLALA0DM-JGCT - LPDDR5X DRAM x32 | Samsung Semiconductor
MPN: K3KLALA0DM-JGCT ✓ Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K3KLALA0DM-JGCT — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K3KLALA0DM-MGCU
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View Datasheet →K3KL9L90DM-JGCT
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View Datasheet →K3KL8L80DM-JGCT
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View Datasheet →K3KL2L20DM-JGCT
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View Datasheet →K3KL9L90CM-MGCT
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View Datasheet →K3KLALA0DM-JGCT Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Memory Type | LPDDR5X SDRAM |
| Organization | x32 |
| Product Status | Mass Production |
| Family Max Data Rate | Up to 8.5 Gbps (LPDDR5X family) |
| Family Power Efficiency | Approx. 20% better than LPDDR5 |
| Family Max Density | Up to 64 GB (family) |
| Mounting Type | Surface Mount |
| Standards Compliance | JEDEC LPDDR5X |
K3KLALA0DM-JGCT [data_needed: fbga ball count / package code] Pin Configuration Guide
Complete pinout information for K3KLALA0DM-JGCT ([data_needed: fbga ball count / package code] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: fbga ball count / package code] package pinout diagram for K3KLALA0DM-JGCT](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for K3KLALA0DM-JGCT.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K3KLALA0DM-JGCT is suitable for 6 applications: Flagship Smartphone Main Memory, AI Edge Computing Accelerators, Automotive Infotainment and ADAS Domain Controllers, Tablets and 2-in-1 Mobile Computing, Networking and Edge Server Memory, High-Performance Embedded and Test Systems.
Flagship Smartphone Main Memory
The K3KLALA0DM-JGCT fits flagship smartphone SoC main memory where LPDDR5X bandwidth directly determines AI inference speed, camera pipeline throughput, and UI responsiveness. Samsung developed LPDDR5X specifically for IT and mobile flagship devices, with family data rates up to 8.5 Gbps and about 20% better power efficiency than LPDDR5, translating into longer battery life under identical workloads. The x32 organization provides wide parallelism that lowers the required bus clock for a given aggregate bandwidth, easing signal-integrity margins inside densely routed smartphone PCBs. In a typical design, the LPDDR5X is placed close to the application processor on a short fly-by bus with tightly length-matched byte lanes and dense VDDQ decoupling. Power-wise, dynamic voltage and frequency scaling lets the memory idle at reduced VDD, cutting standby drain during screen-off periods - a quantified benefit for daily-use battery endurance.
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AI Edge Computing Accelerators
Edge AI modules and NPUs are memory-bandwidth bound: model weights and activation buffers stream continuously from DRAM, so LPDDR5X bandwidth directly sets tokens-per-second and frames-per-second figures. The K3KLALA0DM-JGCT's LPDDR5X interface - with family speeds up to 8.5 Gbps per pin and x32 organization - supplies the high aggregate bandwidth that edge accelerators need without the power budget of GDDR or HBM. Samsung's LPDDR5X family targets exactly this class of IT-industry premium compute. Integration typically places one or two LPDDR5X packages beside the accelerator SoC on a short, impedance-controlled bus; the memory controller's read/write training compensates trace skew at each speed bin. Compared with stacking multiple LPDDR5 dies, a single LPDDR5X package reduces routing layers and board area, while deep power-down states cut idle consumption between inference bursts - meaningful for always-on camera analytics and voice assistants.
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Automotive Infotainment and ADAS Domain Controllers
Samsung explicitly positions LPDDR5X for IT industry and automotive devices, making the K3KLALA0DM-JGCT a candidate for cockpit domain controllers, surround-view ADAS processors, and centralized computing platforms that juggle multiple camera streams and 3D displays. The family's 8.5 Gbps-class bandwidth sustains multi-sensor fusion workloads, while the roughly 20% efficiency improvement over LPDDR5 reduces heat dissipation inside sealed, fanless automotive enclosures - a concrete thermal benefit. In-vehicle designs typically pair the LPDDR5X with an automotive SoC over a short point-to-point bus; vibration-rated solder joints and extended-temperature handling must be verified for the specific suffix code. Designers should confirm AEC-Q100 qualification status for the exact ordering code before safety-critical deployment, since standard commercial LPDDR5X parts are not automatically automotive qualified. Where qualification is confirmed, LPDDR5X delivers the highest memory bandwidth-per-watt available for zone controllers.
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Tablets and 2-in-1 Mobile Computing
Premium tablets and 2-in-1 convertibles use LPDDR5X as unified system memory for the SoC, GPU, and ISP, and the K3KLALA0DM-JGCT's x32 organization provides the wide, fast memory fabric these workloads demand. Samsung's LPDDR5X family spans densities up to 64 GB, letting tablet platforms scale RAM SKUs from a single footprint. The 8.5 Gbps-class data rates keep large-resolution displays, multi-layer photo editing, and on-device AI features fluid, while the family's improved power efficiency over LPDDR5 extends battery runtime under sustained load - a headline spec for mobile computing. Thermal design benefits too: lower DRAM power reduces skin-temperature hotspots near the memory, avoiding throttling. Layout practice places the package on the opposite PCB side from the SoC or in a tightly coupled cluster, with byte-lane length matching and reference-plane integrity maintained to the LPDDR5X speed bin selected.
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Networking and Edge Server Memory
High-throughput networking appliances - 5G small-cell baseband units, edge gateways, and microservers - increasingly adopt LPDDR5X instead of DDR4 SODIMMs to gain bandwidth while shrinking power draw. The K3KLALA0DM-JGCT's LPDDR5X x32 interface provides wide memory channels suitable for packet-buffering and forwarding-table workloads, and Samsung's family-level 8.5 Gbps data rates enable line-rate processing at multi-gigabit port speeds. Power efficiency matters at rack scale: the family's roughly 20% improvement over LPDDR5 compounds across many nodes into measurable opex savings. In these designs, LPDDR5X is soldered around the network SoC with fly-by routing; memory training at boot validates each speed bin. Compared with DDR5 DIMM solutions, the soldered LPDDR5X approach trades serviceability for lower profile, lower latency, and better energy per transferred bit - the preferred trade in sealed edge hardware deployed outdoors or in street cabinets.
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High-Performance Embedded and Test Systems
High-performance embedded systems - industrial vision controllers, medical imaging capture units, and protocol analyzers - need large streaming buffers that the K3KLALA0DM-JGCT supplies efficiently through its LPDDR5X x32 interface. Samsung's LPDDR5X family, with up to 8.5 Gbps family data rates and densities spanning to 64 GB, allows instrument designers to capture sustained multi-gigabit data streams into memory without resorting to power-hungry GDDR implementations. The mass-production status of this part supports long-lifecycle embedded programs with stable sourcing. Integration typically pairs the DRAM with an FPGA or application processor whose memory controller supports LPDDR5X training; x32 wide organization simplifies multi-channel buffering topologies. Designers should budget for the JGCT suffix's defined speed bin and validate RoHS and reliability documentation with the distributor. The payoff is higher sustained capture bandwidth per watt, directly increasing instrument measurement throughput and reducing cooling complexity in compact enclosures.
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Recommended Products Summary
Engineering reference data for K3KLALA0DM-JGCT — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K3KLALA0DM-MGCU | K3KL9L90DM-JGCT | K3KL8L80DM-JGCT | K3KL9L90CM-MGCT |
|---|---|---|---|---|---|
| Package | FBGA (Samsung LPDDR5X package) | FBGA - same | FBGA - same | FBGA - same | FBGA - same family, suffix differs |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM | LPDDR5X SDRAM |
| Organization | x32 | x32 | x32 | x32 | [DATA_NEEDED] |
| Data Rate | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 7500 Mbps |
| Density | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 64 Gb |
| Lifecycle Status | Mass Production | Mass Production | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Suffix / Handling Code | JGCT (JG speed/temp, CT packing) | MGCU | JGCT | JGCT | MGCT |
Key Differentiators
- Highest die class within the same-family drop-in group (vs K3KL9L90DM-JGCT)
- Same-die second speed grade available (vs K3KLALA0DM-MGCU)
- LPDDR5X power efficiency advantage (vs Legacy LPDDR5/LPDDR4X parts)
Design Notes
LPDDR5X operation at multi-gigabit rates requires strict signal-integrity discipline. Route all data byte lanes as tightly length-matched groups with controlled single-ended impedance (nominally 40-55 ohm per JEDEC LPDDR5X practice), reference them to unbroken ground planes, and minimize via transitions on the data bus. Channel length between SoC and the K3KLALA0DM-JGCT should be kept as short as physically possible - ideally under 50 mm - and simulator-based eye analysis should be run at the chosen speed bin before layout freeze. Read/write training in the memory controller PHY will trim static skew, but it cannot recover from gross impedance discontinuities or crosstalk violations.
Provide separate, clean rails for VDD and VDDQ per the Samsung datasheet, decoupling VDDQ with a dense array of low-ESL 0201/0402 ceramic capacitors placed within a few millimeters of the ball field. LPDDR5X dynamic voltage and frequency scaling means rail load varies rapidly with workload; regulator transient response must keep VDDQ ripple within datasheet limits during burst traffic. Estimated: at multi-gigabit operation a single LPDDR5X package can draw hundreds of milliwatts, so plan power distribution and copper thickness accordingly rather than scaling from LPDDR4 budgets.
Do not substitute another LPDDR5X suffix code without verifying three items: density, speed grade bin, and package ball-map. Samsung suffix letters encode speed and packing; for example, the sibling K3KLALA0DM-MGCU shares the die but carries a different suffix, and the CM-suffix K3KL9L90CM-MGCT differs in package handling. Boot failures typically stem from a controller expecting a faster bin than the device supports. Always request the exact ordering-code datasheet from Samsung (often under NDA) and program the controller's device tree or strap settings to match the installed part.
Compliance Information
Compliance data was not stated in the verified web data for this exact ordering code. Samsung mobile DRAM is typically RoHS-compliant, but certification must be confirmed via the Samsung product page or a material declaration request.
