K4RAH165VB-BIWM - 16Gb DDR5 1Gx16 5600Mbps DRAM | Samsung
부품 번호: K4RAH165VB-BIWM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K4RAH165VB-BIWM 개요
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR DRAM family used as main memory in servers, networking platforms, and advanced embedded systems. Within the memory hierarchy, DRAM sits between CPU caches and storage, and DDR5 succeeds DDR4 with higher bandwidth, lower operating voltage, on-die ECC, and on-chip termination improvements. Samsung is a tier-one DRAM manufacturer and the K4RAH family represents its B-die generation DDR5 components.
Key features of the K4RAH165VB-BIWM include a 16Gb single-die density organized as 1G x 16, a 1.1V core supply that reduces power consumption versus DDR4, and a 5600Mbps pin speed for high-bandwidth memory subsystems. The x16 organization suits platforms whose memory controllers use 16-bit-wide channels or split-channel topologies.
The device incorporates DDR5-standard functions reported for the K4RAH165VB family, including on-die error correction code (ECC), automatic self-refresh, asynchronous reset, write leveling, CRC, and ZQ calibration, per Samsung datasheet documentation.
Typical applications include data-center server main memory, networking and telecom line-card buffering, industrial and embedded computing platforms requiring DDR5 bandwidth, and high-performance client systems.
Design consideration: DDR5 power integrity is critical. The 1.1V VDD rail requires a dedicated PMIC (such as the common DDR5 rail management ICs), tight decoupling, and length-matched fly-by routing for the CA bus.
This page synthesizes distributor stock data, Samsung datasheet references, and same-family drop-in alternatives not consolidated in the manufacturer datasheet. Pricing as of 2026-09-04.
드롭인 대체품: K4RAH165VB-BIWM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4RAH165VB-BIWM (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Memory Type, Package, On-Die ECC, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4RAH165VB-BCWM
✅ 드롭인✓ 재고 있음
$9.92 / 개
데이터시트 보기 →K4RAH165VB-BCQK
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K4RAH165VB-BIQK
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K4RAH165VB-BIWM 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| Density | 16 Gb |
| 메모리 구성 | 1G x 16 |
| 데이터 속도 | 5600 Mbps |
| 공급 전압 | 1.1 V |
| 패키지 | 106-ball FBGA |
| 동작 온도 | 0C to +85C |
| On-Die ECC | Yes (per K4RAH165VB family datasheet) |
| Self Refresh | Auto self-refresh |
| Reset Function | Asynchronous reset |
| Write Leveling | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| DLL | DLL enabled mode of operation (per datasheet) |
| 실장 유형 | Surface Mount |
| Standard Packaging | 1000 units |
| RoHS 상태 | Compliant (per JLCPCB listing for K4RAH165VB-BCWM, same family) |
K4RAH165VB-BIWM 106-ball fbga 핀 구성 가이드
K4RAH165VB-BIWM(106-ball fbga 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4RAH165VB-BIWM.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4RAH165VB-BIWM 적합 용도: 6 애플리케이션s: Data Center Server Main Memory, Networking and Telecom Line Cards, Industrial Embedded Computing, High-Performance Client and Workstation Memory, Test and Measurement Instrumentation, Automotive-Adjacent and Rugged Embedded Platforms.
Data Center Server Main Memory
The K4RAH165VB-BIWM's 16Gb density and 5600Mbps data rate align with modern server memory controllers that require high per-DIMM capacity and bandwidth. In registered DIMM designs, x16 DDR5 components such as this one populate ECC-wide channel topologies where on-die ECC inside the DRAM adds a first layer of error protection before link CRC. Operating at 1.1V instead of DDR4's 1.2V reduces memory-subsystem power draw, which matters at hyperscale where memory is a dominant power consumer. The component's auto self-refresh supports advanced power management states demanded by server idle-power targets. Board designers should pair it with DDR5 PMIC-based RDIMM architectures and verify speed-bin timing against the platform's supported JEDEC frequencies.
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Networking and Telecom Line Cards
Networking switches, routers, and telecom line cards use DRAM for packet buffering, queue management, and lookup tables, where the K4RAH165VB-BIWM's 5600Mbps pin speed provides the random-access throughput needed to sustain line-rate forwarding. The x16 organization suits embedded CPU and network processor memory controllers that implement 16-bit or split DDR5 channels, allowing two packages to form a 32-bit-wide interface. Asynchronous reset enables deterministic reinitialization of the buffer subsystem after line-card faults, and on-die ECC protects long-lived queue data. Its 0C to +85C industrial coding covers Telecom Equipment Building times and sheltered outdoor installations, though thermal design should keep case temperatures within rating under continuous traffic load.
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Industrial Embedded Computing
Industrial PCs, edge controllers, and machine-vision systems increasingly adopt DDR5 for its bandwidth and efficiency, and the K4RAH165VB-BIWM fits these designs with its industrial-range coding and 0C to +85C rating. In an embedded CPU module, the x16 component typically attaches to a 64-bit controller as part of a four- or eight-chip memory array on a solder-down SO-DIMM or onboard-down topology. Auto self-refresh preserves contents during low-power idle states required by battery-backed and energy-harvesting installations, while on-die ECC improves data integrity in electrically noisy factory environments. Designers must implement the DDR5 fly-by CA bus routing and ZQ calibration network per Samsung's layout guidelines to meet 5600Mbps signal integrity targets.
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High-Performance Client and Workstation Memory
Desktop workstations and high-end client platforms with DDR5 memory controllers use x16 components like the K4RAH165VB-BIWM in soldered-down or module designs where 5600Mbps bandwidth feeds integrated GPUs and multi-core CPUs. The 16Gb density allows 16GB modules built from eight packages on a 64-bit channel, and 1.1V operation reduces module power versus equivalent DDR4 configurations, improving thermals in compact chassis. On-die ECC and CRC raise effective reliability for creative and engineering workloads manipulating large datasets. Consumer client designs should confirm that the platform's memory reference code supports the 5600Mbps JEDEC bin, and memory-down implementations must follow the DDR5 termination and decoupling scheme in the Samsung datasheet.
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Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol testers require deep capture memory with sustained streaming bandwidth, and the K4RAH165VB-BIWM's 5600Mbps data rate supports high-throughput acquisition buffering behind FPGA capture front ends. The x16 organization simplifies building 32-bit or 64-bit-wide memory banks from multiple packages, increasing burst depth for waveform storage. Its asynchronous reset function allows the instrument firmware to deterministically clear the acquisition buffer between captures, and ZQ calibration maintains drive strength accuracy across the 0C to +85C range in benchtop thermal conditions. Designers should validate write-leveling and read training margins at 5600Mbps across trace-length skew, as FPGA memory controllers require per-byte-lane calibration for this speed class.
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Automotive-Adjacent and Rugged Embedded Platforms
While this SKU is not AEC-Q100 qualified, ruggedized non-automotive embedded platforms such as railway, marine, and industrial gateways use industrial-coded DDR5 like the K4RAH165VB-BIWM for compute-heavy telemetry and video analytics workloads. The industrial temperature coding, 0C to +85C, covers most sheltered rugged environments, and on-die ECC plus link CRC defend against vibration-induced and EMI-induced bit errors common in vehicle and rail electronics. At 1.1V, memory power scales down, easing conduction-cooled thermal designs. Note for safety-relevant designs: this commercial-industrial part carries no automotive qualification, so automotive programs should source Samsung's AEC-Q100-qualified DDR variants and verify qualification status explicitly with the manufacturer.
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추천 제품 요약
엔지니어링 참조 데이터: K4RAH165VB-BIWM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4RAH165VB-BCWM | K4RAH165VB-BCQK | K4RAH165VB-BIQK |
|---|---|---|---|---|
| Package | 106-ball FBGA | 106-ball FBGA - same | 106-ball FBGA - same | 106-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Key Features | On-die ECC, self-refresh, write leveling, CRC, ZQ cal (family) | 16 Gb DDR5, 1.1V | Auto self-refresh, async reset, on-die ECC, write leveling, CRC, ZQ cal | 16 Gb DDR5, 4800 Mbps |
주요 차별점
- 5600Mbps speed bin (vs K4RAH165VB-BIQK)
- Industrial-range coding (vs K4RAH165VB-BCWM)
- DDR5 generation efficiency (vs K4A4G165WF-BCTD (DDR4))
설계 노트
DDR5 systems require a dedicated power architecture: the 1.1V VDD rail and VDDQ rails must come from a DDR5-compatible PMIC or well-regulated DC-DC stages with sequencing per Samsung's power-up requirements. Unlike DDR4, module-level 12V-to-low-voltage conversion moves onto registered DIMMs via a PMIC, so memory-down designs must replicate this locally. Estimated: a 16GB array of eight 16Gb x16 packages at full 5600Mbps activity draws on the order of several watts total, so budget decoupling and copper accordingly; exact current depends on access patterns and must be verified with Samsung's IDD specification tables.
Route the DDR5 address/command (CA) bus in fly-by topology with on-die termination, and length-match DQ/DQS byte lanes within the tolerance required for the 5600Mbps bin. Use controlled-impedance stackup, solid reference planes under all DDR5 nets, and place ZQ calibration resistors precisely per the Samsung datasheet layout guidelines. Vias on DQS strobes should be minimized; every stub degrades eye margin at this data rate. Perform read/write training in the memory controller for each board build, as die lot changes can shift margins slightly.
Three frequent mistakes with DDR5 B-die components: (1) assuming DDR4 footprints or ball maps are compatible - DDR5 changed pin assignments and command encoding, so K4A-series DDR4 parts cannot be dropped into this socket; (2) ignoring suffix coding - BIWM, BCWM, BCQK, and BIQK differ in speed bin and temperature coding, and substituting a slower bin (e.g., 4800Mbps BIQK) into a platform validated at 5600Mbps will fail memory training; (3) buying refurbished or remarked chips on the secondary market - this SKU is known to exist in refurbished condition, so require date-code traceability.
규정 준수 정보
RoHS compliance inferred from family listing: sibling K4RAH165VB-BCWM is listed as ROHS on JLCPCB/LCSC. Not an automotive-qualified part; no AEC-Q100 data found. REACH and other declarations not present in provided data - request material declarations from Samsung.
